Quantum Dot Spin Research Articles

Network architecture for a topological quantum computer in silicon

A design for a large-scale surface code quantum processor based on a node/network approach is introduced for semiconductor quantum dot spin qubits. The minimal node contains only seven quantum dots, and nodes are separated on the micron scale, creating useful space for wiring interconnects and integration of conventional transistor circuits. Entanglement is distributed between neighbouring nodes by loading spin singlets locally and then shuttling one member of the pair through a linear array of empty dots. A node contains one data qubit, two ancilla qubits, and additional dots to facilitate electron shuttling and measurement of the ancillas. A four-node GHZ state is realized by sharing three internode singlets followed by local gate operations and ancilla measurements. Further local operations produce an X or Z stabilizer on the four data qubits, which is the fundamental operation of the surface code. Electron shuttling is simulated in the single-valley case using a simple gate electrode geometry without explicit barrier gates, and demonstrates that adiabatic transport is possible on timescales that do not present a speed bottleneck to the processor. An important shuttling error in a clean system is uncontrolled phase rotation of the spin due to modulation of the electronic g-factor during transport, owing to the Stark effect. This error can be reduced by appropriate electrostatic tuning of the stationary electron’s g-factor. While these simulations are unrealistic in neglecting spin–orbit, valley and decoherence effects, they are realistic with respect to the gate-induced potential landscape and are a first step towards more realistic modelling. Using reasonable noise models, we estimate error thresholds with respect to single and two-qubit gate fidelities as well as singlet dephasing errors during shuttling. A twirling protocol transforms the non-Pauli noise associated with exchange gate operations into Pauli noise, making it possible to use the Gottesman–Knill theorem to efficiently simulate large codes.

Uniaxial Dynamical Decoupling for an Open Quantum System.

Dynamical decoupling (DD) is an active and effective method for suppressing decoherence of a quantum system from its environment. In contrast to the nominal biaxial DD, this work presents a uniaxial decoupling protocol that requires a significantly reduced number of pulses and a much lower bias field satisfying the "magic" condition. We show this uniaxial DD protocol works effectively in a number of model systems of practical interest, e.g., a spinor atomic Bose-Einstein condensate in stray magnetic fields (classical noise), or an electron spin coupled to nuclear spins (quantum noise) in a semiconductor quantum dot. It requires only half the number of control pulses and a 10-100 times lower bias field for decoupling as normally employed in the above mentioned illustrative examples, and the overall efficacy is robust against rotation errors of the control pulses. The uniaxial DD protocol we propose shines new light on coherent controls in quantum computing and quantum information processing, quantum metrology, and low field nuclear magnetic resonance.

Adiabatically preparing quantum dot spin states in the Voigt geometry

We use mutually delayed and partially overlapping optical pulses, similar to those used in stimulated Raman adiabatic passage and its variations, for the coherent control of quantum dot spin states in the Voigt geometry. We consider the quantum dot system initially in an incoherent mixture of the two electron-spin states. We show that the application of regular delayed and partially overlapping pulses can lead to initialization. In addition, if initially delayed, partially overlapping, and simultaneously switched off pulses are applied, the initially incoherent mixture can be changed to a specifically designed coherent superposition state. We also find that due to the initial conditions of the studied quantum system, the proposed methods work for different pulse orderings.

99.992% 28Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits

Silicon-based quantum bits with electron spins in quantum dots or nuclear spins on dopants are serious contenders in the race for quantum computation. Added to process integration maturity, the lack of nuclear spins in the most abundant 28silicon isotope host crystal for qubits is a major asset for this silicon quantum technology. We have grown 28silicon epitaxial layers (epilayers) with an isotopic purity greater than 99.992% on 300 mm natural abundance silicon crystals. The quality of the mono-crystalline isotopically purified epilayer conforms to the same drastic quality requirements as the natural epilayers used in our pre-industrial CMOS facility. The isotopically purified substrates are now ready for the fabrication of silicon qubits using state-of-the-art 300 mm Si CMOS-foundries equipments and processes.

Comment on ‘Deterministic CNOT gate and entanglement swapping for photonic qubits using a quantum-dot spin in a double-sided optical microcavity’ by H.F. Wang et al. [Physics Letters A 377 (2013) 2870–2876

Comment on ‘Deterministic CNOT gate and entanglement swapping for photonic qubits using a quantum-dot spin in a double-sided optical microcavity’ by H.F. Wang et al. [Physics Letters A 377 (2013) 2870–2876

Qubit gates with simultaneous transport in double quantum dots

A single electron spin in a double quantum dot in a magnetic field is considered in terms of a four-level system. By describing the electron motion between the potential minima via spin-conserving tunneling and spin flip caused by a spin–orbit coupling, we inversely engineer faster-than-adiabatic state manipulation operations based on the geometry of four-dimensional rotations. In particular, we show how to transport a qubit among the quantum dots performing simultaneously required spin rotations.

Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises

A comparison of gate fidelities between different spin qubit types defined in quantum dots and a donor under different control errors is reported. We studied five qubit types, namely the quantum dot spin qubit, the double quantum dot singlet-triplet qubit, the double quantum dot hybrid qubit, the donor qubit and the quantum dot spin-donor qubit. For each one, we derived analytical time sequences that realize single qubit rotations along the principal axis of the Bloch sphere. We estimated the effects of control errors on the gate fidelity by using a Gaussian noise model. Then we compared the gate fidelities among qubit implementations due to pulse timing errors by using a realistic set of values for the error parameters of control amplitudes.

Integrated silicon qubit platform with single-spin addressability, exchange control and single-shot singlet-triplet readout

Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long coherence times accessible using 28Si enriched material. A scalable error-corrected quantum processor, however, will require control of many qubits in parallel, while performing error detection across the constituent qubits. Spin resonance techniques are a convenient path to parallel two-axis control, while Pauli spin blockade can be used to realize local parity measurements for error detection. Despite this, silicon qubit implementations have so far focused on either single-spin resonance control, or control and measurement via voltage-pulse detuning in the two-spin singlet–triplet basis, but not both simultaneously. Here, we demonstrate an integrated device platform incorporating a silicon metal-oxide-semiconductor double quantum dot that is capable of single-spin addressing and control via electron spin resonance, combined with high-fidelity spin readout in the singlet-triplet basis.

Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift

Electron spins confined in quantum dots are an attractive system to realize high-fidelity qubits owing to their long coherence time. With the prolonged spin coherence time, however, the control fidelity can be limited by systematic errors rather than decoherence, making characterization and suppression of their influence crucial for further improvement. Here we report that the control fidelity of Si/SiGe spin qubits can be limited by the microwave-induced frequency shift of electric dipole spin resonance and it can be improved by optimization of control pulses. As we increase the control microwave amplitude, we observe a shift of the qubit resonance frequency, in addition to the increasing Rabi frequency. We reveal that this limits control fidelity with a conventional amplitude-modulated microwave pulse below 99.8%. In order to achieve a gate fidelity >99.9%, we introduce a quadrature control method, and validate this approach experimentally by randomized benchmarking. Our finding facilitates realization of an ultra-high-fidelity qubit with electron spins in quantum dots.

Dynamics of probing a quantum-dot spin qubit with superconducting resonator photons

The hybrid system of electron spins and resonator photons is an attractive architecture for quantum computing owing to the long coherence times of spins and the promise of long-distance coupling between arbitrary pairs of qubits via photons. For the device to serve as a building block for a quantum processer, it is also necessary to readout the spin qubit state. Here we analyze in detail the measurement process of an electron spin singlet-triplet qubit in quantum dots using a coupled superconducting resonator. We show that the states of the spin singlet-triplet qubit lead to readily observable features in the spectrum of a microwave field through the resonator. These features provide useful information on the hybrid system. Moreover, we discuss the working points which can be implemented with high performance in the current state-of-the-art devices. These results can be used to construct the high fidelity measurement toolbox in the spin-circuit QED system.

Spin and valley control in single and double electrostatic silicene quantum dots

We study single and double quantum dots defined electrostatically within silicene. The spin-valley structure of the confined single- and two-electron system is determined and the effects of the intervalley scattering induced by the crystal edge and the Coulomb interaction are quantified. The states in a double quantum system are discussed in the context of the spatial symmetry of the single- and two-electron extended orbitals. We determine the charge, spin and valley transitions times induced by alternate electric fields of the microwave frequency. The valley transition times can be controlled by several orders of magnitude by the confinement potential. Also, the spin transition rates can be enhanced by orders of magnitude by the coupling of the bonding and antibonding orbitals mediated by the Rashba interaction.

Assessment of a Silicon Quantum Dot Spin Qubit Environment via Noise Spectroscopy

Preserving coherence long enough to perform meaningful calculations is one of the major challenges on the pathway to large scale quantum computer implementations. Noise coupled from the environment is the main contributing factor to decoherence but can be mitigated via engineering design and control solutions. However, this is only possible after acquiring a thorough understanding of the dominant noise sources and their spectrum. In this paper, we employ a silicon quantum dot spin qubit as a metrological device to study the noise environment experienced by the qubit. We compare the sensitivity of this qubit to electrical noise with that of an implanted phosphorus donor in silicon qubit in the same environment and measurement set-up. Our results show that, as expected, a quantum dot spin qubit is more sensitive to electrical noise than a donor spin qubit due to the larger Stark shift, and the noise spectroscopy data shows pronounced charge noise contributions at intermediate frequencies (2-20 kHz).

Nuclear frequency focusing in periodically pulsed semiconductor quantum dots described by infinite classical central spin models

The coherence of an electronic spin in a semiconductor quantum dot decays due to its interaction with the bath of nuclear spins in the surrounding isotopes. This effect can be reduced by subjecting the system to an external magnetic field and by applying optical pulses. By repeated pulses in long trains the spin precession can be synchronized to the pulse period $T_\text{R}$. This drives the nuclear spin bath into states far from equilibrium leading to nuclear frequency focusing. In this paper, we use an efficient classical approach introduced in Phys. Rev. B $\textbf{96}$, 054415 (2017) to describe and to analyze this nuclear focusing. Its dependence on the effective bath size and on the external magnetic field is elucidated in a comprehensive study. We find that the characteristics of the pulse as well as the nuclear Zeeman effect influence the behavior decisively.

Coherent dynamics in stochastic systems revealed by full counting statistics

Stochastic systems feature, in general, both coherent dynamics and incoherent transitions between different states. We propose a method to identify the coherent part in the full counting statistics for the transitions. The proposal is illustrated for electron transfer through a quantum-dot spin valve, which combines quantum-coherent spin precession with electron tunneling. We show that by counting the number of transferred electrons as a function of time, it is possible to distill out the coherent dynamics from the counting statistics even in transport regimes, in which other tools such as the frequency-dependent current noise and the waiting-time distribution fail.

Coherence of a dynamically decoupled quantum-dot hole spin

A heavy hole confined to an InGaAs quantum dot promises the union of a stable spin and optical coherence to form a near perfect, high-bandwidth spin-photon interface. Despite theoretical predictions and encouraging preliminary measurements, the dynamic processes determining the coherence of the hole spin are yet to be understood. Here, we establish the regimes that allow for a highly coherent hole spin in these systems, recovering a crossover from hyperfine to electrical-noise dominated decoherence with a few-Tesla external magnetic field. Dynamical decoupling allows us to reach the longest ground-state coherence time, T2, of 4.4 $\mu$s, observed in this system. The improvement of coherence we measure is quantitatively supported by an independent analysis of the local electrical environment.

Yu\u2013Shiba\u2013Rusinov screening of spins in double quantum dots

A magnetic impurity coupled to a superconductor gives rise to a Yu–Shiba–Rusinov (YSR) state inside the superconducting energy gap. With increasing exchange coupling the excitation energy of this state eventually crosses zero and the system switches to a YSR ground state with bound quasiparticles screening the impurity spin by ħ/2. Here we explore indium arsenide (InAs) nanowire double quantum dots tunnel coupled to a superconductor and demonstrate YSR screening of spin-1/2 and spin-1 states. Gating the double dot through nine different charge states, we show that the honeycomb pattern of zero-bias conductance peaks, archetypal of double dots coupled to normal leads, is replaced by lines of zero-energy YSR states. These enclose regions of YSR-screened dot spins displaying distinctive spectral features, and their characteristic shape and topology change markedly with tunnel coupling strengths. We find excellent agreement with a simple zero-bandwidth approximation, and with numerical renormalization group calculations for the two-orbital Anderson model.

Valley dependent anisotropic spin splitting in silicon quantum dots

Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent experiments have utilized gradient magnetic fields from integrated micro-magnets to produce an extrinsic coupling between spin and charge, thereby electrically driving electron spin resonance (ESR). However, spins in silicon QDs experience a complex interplay between spin, charge, and valley degrees of freedom, influenced by the atomic scale details of the confining interface. Here, we report experimental observation of a valley dependent anisotropic spin splitting in a Si QD with an integrated micro-magnet and an external magnetic field. We show by atomistic calculations that the spin-orbit interaction (SOI), which is often ignored in bulk silicon, plays a major role in the measured anisotropy. Moreover, inhomogeneities such as interface steps strongly affect the spin splittings and their valley dependence. This atomic-scale understanding of the intrinsic and extrinsic factors controlling the valley dependent spin properties is a key requirement for successful manipulation of quantum information in Si QDs.

Interface-induced spin-orbit interaction in silicon quantum dots and prospects for scalability

We identify the presence of monoatomic steps at the Si/SiGe or Si/SiO$_2$ interface as a dominant source of variations in the dephasing time of Si quantum dot (QD) spin qubits. First, using atomistc tight-binding calculations we show that the g-factors and their Stark shifts undergo variations due to these steps. We compare our theoretical predictions with experiments on QDs at a Si/SiO$_2$ interface, in which we observe significant differences in Stark shifts between QDs in two different samples. We also experimentally observe variations in the $g$-factors of one-electron and three-electron spin qubits realized in three neighboring QDs on the same sample, at a level consistent with our calculations. The dephasing times of these qubits also vary, most likely due to their varying sensitivity to charge noise, resulting from different interface conditions. More importantly, from our calculations we show that by employing the anisotropic nature of the spin-orbit interaction (SOI) in a Si QD, we can minimize and control these variations. Ultimately, we predict that the dephasing times of the Si QD spin qubits will be anisotropic and can be improved by at least an order of magnitude, by aligning the external DC magnetic field towards specific crystal directions.

Logical Qubit in a Linear Array of Semiconductor Quantum Dots

We design and analyze a logical qubit composed of a linear array of electron spins in semiconductor quantum dots. To avoid the difficulty of fully controlling a two-dimensional array of dots, we adapt spin control and error correction to a one-dimensional line of silicon quantum dots. Control speed and efficiency are maintained via a scheme in which electron spin states are controlled globally using broadband microwave pulses for magnetic resonance while two-qubit gates are provided by local electrical control of the exchange interaction between neighboring dots. Error correction with two-, three-, and four-qubit codes is adapted to a linear chain of qubits with nearest-neighbor gates. We estimate an error correction threshold of 1e-4. Furthermore, we describe a sequence of experiments to validate the methods on near-term devices starting from four coupled dots.

Suppression of spin and optical gaps in phosphorene quantum dots

Electronic structure and optical properties of triangular phosphorene quantum dots have been investigated theoretically. Based on systematic configuration interaction calculations, the ground and excited states of the interacting many-electron system together with its optical absorption spectrum are obtained. For the nanodot with 60 phosphorus atoms in various dielectric environments, it is found that the spin gap of the correlated system surprisingly overlaps its optical gap over a large range of the effective dielectric constant. The overlapping of the spin and optical gaps can be attributed to the fact that the extra correlation energy in the spin singlet almost compensates the exchange energy in the spin triplet in the presence of strong long-range electron-electron interactions. Moreover, both the spin and optical gaps are shown to be greatly suppressed as the screening effect becomes strong. When the dielectric constant decreases below 2.65, it is seen that the spin gap becomes negative and the quantum dot undergoes a phase transition from nonmagnetic to ferromagnetic. Our results are compared with the previous experimental and theoretical works.