Abstract
Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long coherence times accessible using 28Si enriched material. A scalable error-corrected quantum processor, however, will require control of many qubits in parallel, while performing error detection across the constituent qubits. Spin resonance techniques are a convenient path to parallel two-axis control, while Pauli spin blockade can be used to realize local parity measurements for error detection. Despite this, silicon qubit implementations have so far focused on either single-spin resonance control, or control and measurement via voltage-pulse detuning in the two-spin singlet–triplet basis, but not both simultaneously. Here, we demonstrate an integrated device platform incorporating a silicon metal-oxide-semiconductor double quantum dot that is capable of single-spin addressing and control via electron spin resonance, combined with high-fidelity spin readout in the singlet-triplet basis.
Highlights
Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long coherence times accessible using 28Si enriched material
Because singlet–triplet readout can provide high-fidelity spin readout at much lower magnetic fields than single-spin reservoir-based readout[11], it allows spin-resonance control to be performed at lower microwave frequencies, which will benefit scalability
At the core of singlet–triplet spin readout is the observation of Pauli spinblockade (PSB)[19,28,29,30,31]
Summary
Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long coherence times accessible using 28Si enriched material. We demonstrate an integrated device platform incorporating a silicon metal-oxidesemiconductor double quantum dot that is capable of single-spin addressing and control via electron spin resonance, combined with high-fidelity spin readout in the singlet-triplet basis. In order to combine the ability to address individual spin qubits using ESR with the voltage-pulse-based detuning control and high-fidelity readout of pairs of spins in the singlet-triplet basis, we employ a 28Si metal-oxide-semiconductor (SiMOS) double quantum dot device[26,27] (Fig. 1a, b) with a microwave transmission line that can be used to supply ESR pulses, similar to one previously used for demonstration of a two-qubit logic gate[8]. The reservoir is isolated from QD1 and QD2 by a barrier gate B (see Fig. 1a, b)
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