Quantum Dot Single Photon Sources Research Articles

Micropillar Cavity Design for 1.55-μm Quantum-Dot Single-Photon Sources

The 1.55-μm quantum-dot (QD) micropillar cavities are strongly required as single photon sources (SPSs) for silica-fiber-based quantum information processing. Theoretical analysis shows that the adiabatic distributed Bragg reflector (DBR) structure may greatly improve the quality of a micropillar cavity. An InGaAsP/InP micropillar cavity is originally difficult, but it becomes more likely usable with inserted tapered (thickness decreased towards the center) distributed DBRs. Simulation turns out that, incorporating adiabatically tapered DBRs, a Si/SiO2-InP hybrid micropillar cavity, which enables weakly coupling InAs/InP quantum dots (QDs), can even well satisfy strong coupling at a smaller diameter. Certainly, not only the tapered structure, other adiabatic designs, e.g., both DBR layers getting thicker and one thicker one thinner, also improve the quality, reduce the diameter, and degrade the fabrication difficulty of Si/SiO2-InP hybrid micropillar cavities. Furthermore, the problem of the thin epitaxial semiconductor layer can also be greatly resolved by inserting adiabatic InGaAsP/InP DBRs. With tapered DBRs, the InGaAsP/InP-air-aperture micro-pillar cavity serves as an efficient, coherent, and monolithically producible 1.55-μm single-photon source (SPS). The adiabatic design is thus an effective way to obtain prospective candidates for 1.55-μm QD SPSs.

Strain-induced control of a pillar cavity-GaAs single quantum dot photon source

Herein, we present the calculated strain-induced control of single GaAs/AlGaAs quantum dots (QDs) integrated into semiconductor micropillar cavities. We show precise energy control of individual single GaAs QD excitons under multi-modal stress fields of tailored micropillar optomechanical resonators. Further, using a three-dimensional envelope-function model, we evaluated the quantum mechanical correction in the QD band structures depending on their geometrical shape asymmetries and, more interestingly, on the practical degree of Al interdiffusion. Our theoretical calculations provide the practical quantum error margins, obtained by evaluating Al-interdiffused QDs that were engineered through a front-edge droplet epitaxy technique, for tuning engineered QD single-photon sources, facilitating a scalable on-chip integration of QD entangled photons.

Simulation Study of an Apertured Planar Microcavity for Efficient Single-Photon Sources

An efficient single-photon source is one of the key components in quantum secure communication systems. In this work, a clean quantum-dot single-photon source without side walls, consisting of a planar microcavity structure with an aperture in the light-blocking top metal layer, is designed to prevent spectral diffusion of single-photon emission. Such a source with an aperture diameter of 1000 nm provides a photon collection efficiency of 14%, increased from 0.5% for a quantum dot in GaAs, and one with an 800-nm aperture provides a Purcell enhancement of 1.7 with an excellent far-field radiation pattern. The dependences of the emission characteristics on the aperture size and the quantum dot misplacement are also investigated.

On‐Chip Integration of Single Photon Sources via Evanescent Coupling of Tapered Nanowires to SiN Waveguides

AbstractA method to integrate nanowire‐based quantum dot single photon sources on‐chip using evanescent coupling is demonstrated. By deterministically placing an appropriately tapered III‐V nanowire, containing a single quantum dot, on top of a silicon‐based ridge waveguide, the quantum dot emission directed toward the taper can be transferred to the ridge waveguide with calculated efficiencies close to 100%. As the evanescent coupling is bidirectional, the source can be optically pumped in both free‐space and through the ridge waveguide. The latter configuration paves the way toward a self‐contained, all‐fiber, plug‐and‐play solution for applications requiring a bright on‐demand single photon source. Using InAsP quantum dots embedded in InP nanowire waveguides, coupling efficiencies to a SiN ridge waveguide of 74% with a single photon purity of 97% are demonstrated. The technique to demonstrate deterministic placement of single quantum emitters onto pre‐fabricated waveguides is used, an important step toward the fabrication of complex quantum photonic circuits.

Quantum Frequency Conversion of a Quantum Dot Single-Photon Source on a Nanophotonic Chip.

Single self-assembled InAs/GaAs quantum dots are promising bright sources of indistinguishable photons for quantum information science. However, their distribution in emission wavelength, due to inhomogeneous broadening inherent to their growth, has limited the ability to create multiple identical sources. Quantum frequency conversion can overcome this issue, particularly if implemented using scalable chip-integrated technologies. Here, we report the first demonstration of quantum frequency conversion of a quantum dot single-photon source on a silicon nanophotonic chip. Single photons from a quantum dot in a micropillar cavity are shifted in wavelength with an on-chip conversion efficiency ≈ 12 %, limited by the linewidth of the quantum dot photons. The intensity autocorrelation function for the frequency-converted light is antibunched with , compared to the before-conversion value . We demonstrate the suitability of our frequency conversion interface as a resource for quantum dot sources by characterizing its effectiveness across a wide span of input wavelengths (840 nm to 980 nm), and its ability to achieve tunable wavelength shifts difficult to obtain by other approaches.

Quantum-dot single-photon source on a CMOS silicon photonic chip integrated using transfer printing

Silicon photonics is a powerful platform for implementing large-scale photonic integrated circuits (PICs) because of its compatibility with mature complementary-metal-oxide-semiconductor (CMOS) technology. Exploiting silicon-based PICs for quantum photonic information processing (or the so-called silicon quantum photonics) provides a promising pathway for large-scale quantum applications. For the development of scalable silicon quantum PICs, a major challenge is integrating on-silicon quantum light sources that deterministically emit single photons. In this regard, the use of epitaxial InAs/GaAs quantum dots (QDs) is a very promising approach because of their capability of deterministic single-photon emission with high purity and indistinguishability. However, the required hybrid integration is inherently difficult and often lacks the compatibility with CMOS processes. Here, we demonstrate a QD single-photon source integrated on a glass-clad silicon photonic waveguide processed by a CMOS foundry. Hybrid integration is performed using transfer printing, which enables us to integrate heterogeneous optical components in a simple pick-and-place manner and thus assemble them after the entire CMOS process is completed. We observe single-photon emission from the integrated QD and its efficient coupling into the silicon waveguide. Our transfer-printing-based approach is fully compatible with CMOS back-end processes and thus will open the possibility for realizing large-scale quantum PICs that leverage CMOS technology.

Design for Hybrid Circular Bragg Gratings for a Highly Efficient Quantum-Dot Single-Photon Source

We present a design for hybrid circular Bragg gratings (hCBGs) for efficiently extracting single-photons emitted by InAs quantum dots (QDs) embedded in GaAs. Finite-difference time-domain simulations show that a very high photon collection efficiency (PCE) up to 96% over a 50 nm bandwidth and pronounced Purcell factors up to 19 at cavity resonance are obtained. We also systematically investigate the geometry parameters, including the SiO2 thickness, grating period, gap width and the central disk radius, to improve the device performances. Finally, the PCEs and the Purcell factors of QDs located at different positions of the hCBG are studied, and the results show great robustness against uncertainties in the location of the QD.

Quantum dot single-photon sources with ultra-low multi-photon probability

High-quality sources of single photons are of paramount importance for quantum communication, sensing, and metrology. To these ends, resonantly excited two-level systems based on self-assembled quantum dots have recently generated widespread interest. Nevertheless, we have recently shown that for resonantly excited two-level systems, emission of a photon during the presence of the excitation laser pulse and subsequent re-excitation results in a degradation of the obtainable single-photon purity. Here, we demonstrate that generating single photons from self-assembled quantum dots with a scheme based on two-photon excitation of the biexciton strongly suppresses the re-excitation. Specifically, the pulse-length dependence of the multi-photon error rate reveals a quadratic dependence in contrast to the linear dependence of resonantly excited two-level systems, improving the obtainable multi-photon error rate by several orders of magnitude for short pulses. We support our experiments with a new theoretical framework and simulation methodology to understand few-photon sources.

Independent indistinguishable quantum light sources on a reconfigurable photonic integrated circuit

We report a compact, scalable, quantum photonic integrated circuit realised by combining multiple, tuneable InGaAs/GaAs quantum dot single photon sources with a silicon oxynitride waveguide circuit. Each waveguide in the circuit is addressed by a separate, electrically controlled quantum dot-containing diode. We show that the quantum dot emission from neighbouring diodes can be independently tuned to degeneracy using the Stark Effect and that the resulting photon streams are indistinguishable. This enables on-chip Hong-Ou-Mandel-type interference, as required for many photonic quantum information processing schemes.

Intrinsic and environmental effects on the interference properties of a high-performance quantum dot single-photon source

We report a joint experimental and theoretical study of the interference properties of a single-photon source based on a In(Ga)As quantum dot embedded in a quasiplanar GaAs microcavity. Using resonant laser excitation with a pulse separation of 2 ns, we find near-perfect interference of the emitted photons, and a corresponding indistinguishability of $\mathcal{I}=(99.6{\phantom{\rule{0.16em}{0ex}}}_{\ensuremath{-}\phantom{\rule{0.16em}{0ex}}1.4}^{+\phantom{\rule{0.16em}{0ex}}0.4})%$. For larger pulse separations, quasiresonant excitation conditions, increasing pump power, or with increasing temperature, the interference contrast is progressively and notably reduced. We present a systematic study of the relevant dephasing mechanisms and explain our results in the framework of a microscopic model of our system. For strictly resonant excitation, we show that photon indistinguishability is independent of pump power, but strongly influenced by virtual phonon-assisted processes which are not evident in excitonic Rabi oscillations.

Electro-mechanical control of an on-chip optical beam splitter containing an embedded quantum emitter.

We demonstrate electro-mechanical control of an on-chip GaAs optical beam splitter containing a quantum dot single-photon source. The beam splitter consists of two nanobeam waveguides, which form a directional coupler (DC). The splitting ratio of the DC is controlled by varying the out-of-plane separation of the two waveguides using electromechanical actuation. We reversibly tune the beam splitter between an initial state, with emission into both output arms, and a final state with photons emitted into a single output arm. The device represents a compact and scalable tuning approach for use in III-V semiconductor integrated quantum optical circuits.

Exciton-phonon coupling channels in a ‘strain-free’ GaAs droplet epitaxy single quantum dot

We examine the temperature-dependent excitonic transition energy shift of strain-free GaAs droplet epitaxy (DE) quantum dots (QDs). Interestingly the statistical investigation of QD optical properties enables us to observe three distinct temperature dispersions for four series of DE QDs. We present comparative analyses of the exciton-phonon coupling mechanisms employing various empirical to multi-oscillator models associated with each QD-specific phonon dispersion spectrum. The systematic investigation of such QD exciton-phonon coupling is crucial for fine control of local defects in engineered quantum dot single-photon sources.

High-performance semiconductor quantum-dot single-photon sources.

Single photons are a fundamental element of most quantum optical technologies. The ideal single-photon source is an on-demand, deterministic, single-photon source delivering light pulses in a well-defined polarization and spatiotemporal mode, and containing exactly one photon. In addition, for many applications, there is a quantum advantage if the single photons are indistinguishable in all their degrees of freedom. Single-photon sources based on parametric down-conversion are currently used, and while excellent in many ways, scaling to large quantum optical systems remains challenging. In 2000, semiconductor quantum dots were shown to emit single photons, opening a path towards integrated single-photon sources. Here, we review the progress achieved in the past few years, and discuss remaining challenges. The latest quantum dot-based single-photon sources are edging closer to the ideal single-photon source, and have opened new possibilities for quantum technologies.

Influence of electron-phonon scattering for an on-demand quantum dot single-photon source using cavity-assisted adiabatic passage

We study the role of electron-phonon scattering for a pulse-triggered quantum dot single-photon source which utilizes a modified version of stimulated Raman adiabatic passage and cavity-coupling. This on-demand source is coherently pumped with an optical pulse in the presence of a continuous wave laser drive, allowing for efficient generation of indistinguishable single photons with polarizations orthogonal to the applied fields. In contrast to previous studies, we explore the role of electron-phonon scattering on this semiconductor system by using a polaron master equation approach to model the biexciton-exciton cascade and cavity mode coupling. In addition to background zero-phonon-line decoherence processes, electron-acoustic-phonon coupling, which usually degrades the indistinguishability and efficiency of semiconductor photon sources, is rigorously taken into account. We study how cavity and laser detunings affect the device performance, and explore the effects of finite temperature on pure dephasing and intrinsic phonon-coupling. We describe how this biexciton-exciton cascade scheme allows for true single photons to be generated with over 90% quantum indistinguishability and efficiency simultaneously using realistic experimental parameters. We also show how the double-field dressing can be probed through the cavity-emitted spectrum.

Quantum-Dot Single-Photon Sources for Entanglement Enhanced Interferometry.

Multiphoton entangled states such as "N00N states" have attracted a lot of attention because of their possible application in high-precision, quantum enhanced phase determination. So far, N00N states have been generated in spontaneous parametric down-conversion processes and by mixing quantum and classical light on a beam splitter. Here, in contrast, we demonstrate superresolving phase measurements based on two-photon N00N states generated by quantum dot single-photon sources making use of the Hong-Ou-Mandel effect on a beam splitter. By means of pulsed resonance fluorescence of a charged exciton state, we achieve, in postselection, a quantum enhanced improvement of the precision in phase uncertainty, higher than prescribed by the standard quantum limit. An analytical description of the measurement scheme is provided, reflecting requirements, capability, and restraints of single-photon emitters in optical quantum metrology. Our results point toward the realization of a real-world quantum sensor in the near future.

Proposal for demonstration of long-range cluster state entanglement in the presence of photon loss

Photonic cluster states are a crucial resource for optical quantum computing. Recently a quantum dot single photon source has been demonstrated to produce strings of single photons in a small linear cluster state. Sources of this kind could produce much larger cluster states, but high photon loss rates make it impossible to characterize the entanglement generated by quantum state tomography. We present a benchmarking method for such sources that can be used to demonstrate useful long-range entanglement with currently available collection/detection efficiencies below 1%. The measurement of the polarization state of single photons in different bases can provide an estimate for the three-qubit correlation function ⟨ZXZ⟩. This value constrains correlations spanning more than three qubits, which in turn provide a lower bound for the localizable entanglement between any two qubits in the large state produced by the source. Finite localizable entanglement can be established by demonstrating ⟨ZXZ⟩>23. This result enables photonic experiments demonstrating computationally useful entanglement with currently available technology.

Hybrid quantum optomechanics with a quantum-dot single photon source

We investigate the strain-mediated control of individual single quantum dots (QDs) embedded in a multi-degree-of-freedom optomechanical resonator. The mechanical eigenfrequencies and their mode degeneracy of resonator are tailored in the MHz regime for a geometrical aspect ratio of conventional wire resonator. The stress-induced modification in the QD exciton dynamics is evaluated at the multitude of mechanical resonances including the genuine cases of mode degeneracy. We show that the multi-degree-of-freedom stress fields allow an individual control of QD emission energies with a rate of up to several meV/nm. Such an optomechanical tuning technique can pave the way for entangling distant QDs for quantum information processing or potentially generating a superradiant light pulse.

A quantum dot single-photon source with on-the-fly all-optical polarization control and timed emission.

Sources of single photons are key elements for applications in quantum information science. Among the different sources available, semiconductor quantum dots excel with their integrability in semiconductor on-chip solutions and the potential that photon emission can be triggered on demand. Usually, the photon is emitted from a single-exciton ground state. Polarization of the photon and time of emission are either probabilistic or pre-determined by electronic properties of the system. Here, we study the direct two-photon emission from the biexciton. The two-photon emission is enabled by a laser pulse driving the system into a virtual state inside the band gap. From this intermediate state, the single photon of interest is then spontaneously emitted. We show that emission through this higher-order transition provides a versatile approach to generate a single photon. Through the driving laser pulse, polarization state, frequency and emission time of the photon can be controlled on-the-fly.

Interference with a quantum dot single-photon source and a laser at telecom wavelength

The interference of photons emitted by dissimilar sources is an essential requirement for a wide range of photonic quantum information applications. Many of these applications are in quantum communications and need to operate at standard telecommunication wavelengths to minimize the impact of photon losses and be compatible with existing infrastructure. Here, we demonstrate for the first time the quantum interference of telecom-wavelength photons from an InAs/GaAs quantum dot single-photon source and a laser; an important step towards such applications. The results are in good agreement with a theoretical model, indicating a high degree of indistinguishability for the interfering photons.

Quantum key distribution over 120 km using ultrahigh purity single-photon source and superconducting single-photon detectors.

Advances in single-photon sources (SPSs) and single-photon detectors (SPDs) promise unique applications in the field of quantum information technology. In this paper, we report long-distance quantum key distribution (QKD) by using state-of-the-art devices: a quantum-dot SPS (QD SPS) emitting a photon in the telecom band of 1.5 μm and a superconducting nanowire SPD (SNSPD). At the distance of 100 km, we obtained the maximal secure key rate of 27.6 bps without using decoy states, which is at least threefold larger than the rate obtained in the previously reported 50-km-long QKD experiment. We also succeeded in transmitting secure keys at the rate of 0.307 bps over 120 km. This is the longest QKD distance yet reported by using known true SPSs. The ultralow multiphoton emissions of our SPS and ultralow dark count of the SNSPD contributed to this result. The experimental results demonstrate the potential applicability of QD SPSs to practical telecom QKD networks.