Abstract
We examine the temperature-dependent excitonic transition energy shift of strain-free GaAs droplet epitaxy (DE) quantum dots (QDs). Interestingly the statistical investigation of QD optical properties enables us to observe three distinct temperature dispersions for four series of DE QDs. We present comparative analyses of the exciton-phonon coupling mechanisms employing various empirical to multi-oscillator models associated with each QD-specific phonon dispersion spectrum. The systematic investigation of such QD exciton-phonon coupling is crucial for fine control of local defects in engineered quantum dot single-photon sources.
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