Lateral Quantum Dot Research Articles

Electron spin relaxation control in single electron QDs

So far, all reviews and control approaches of spin relaxation have been done on lateral single electron quantum dots. In such structures, many efforts have been done, in order to eliminate spin-lattice relaxation, to obtain equal Rashba and linear Dresselhaus parameters. But, ratio of these parameters can be adjustable up to 0.7 in a material like GaAs under high-electric field magnitudes. In this article we have proposed a single electron QD structure, where confinements in all of three directions are considered to be almost identical. In this case the effect of cubic Dresselhaus interaction will have a significant amount, which undermines the linear effect of Dresselhaus while it was destructive in lateral QDs. Then it enhances the ratio of the Rashba and Dresselhaus parameters in the proposed structure as much as required and decreases the spin states up and down mixing and the deviation angle from the net spin-down As a result to the least possible value.

Theory of the Quantum Breathing Mode in Harmonic Traps and its Use as a Diagnostic Tool

An analytical expression for the quantum breathing frequency ωb of harmonically trapped quantum particles with inverse power-law repulsion is derived. It is verified by ab initio numerical calculations for electrons confined in a lateral (2D) quantum dot. We show how this relation can be used to express the ground state properties of harmonically trapped quantum particles as functions of the breathing frequency by presenting analytical results for the kinetic, trap, and repulsive energy and for the linear entropy. Measurement of ωb together with these analytical relations represents a tool to characterize the state of harmonically trapped interacting particles--from the Fermi gas to the Wigner crystal regime.

Charge Sensed Pauli Blockade in a Metal–Oxide–Semiconductor Lateral Double Quantum Dot

We report Pauli blockade in a multielectron silicon metal-oxide-semiconductor double quantum dot with an integrated charge sensor. The current is rectified up to a blockade energy of 0.18 ± 0.03 meV. The blockade energy is analogous to singlet-triplet splitting in a two electron double quantum dot. Built-in imbalances of tunnel rates in the MOS DQD obfuscate some edges of the bias triangles. A method to extract the bias triangles is described, and a numeric rate-equation simulation is used to understand the effect of tunneling imbalances and finite temperature on charge stability (honeycomb) diagram, in particular the identification of missing and shifting edges. A bound on relaxation time of the triplet-like state is also obtained from this measurement.

Finite difference method for the arbitrary potential in two dimensions: Application to double/triple quantum dots

A finite difference method (FDM) applicable to a two dimensional (2D) quantum dot was developed as a non-conventional approach to the theoretical understandings of quantum devices. This method can be applied to a realistic potential with an arbitrary shape. Using this method, the Hamiltonian in a tri-diagonal matrix could be obtained from any 2D potential, and the Hamiltonian could be diagonalized numerically for the eigenvalues. The legitimacy of this method was first checked by comparing the results with a finite round well with the analytic solutions. Two truncated harmonic wells were examined as a realistic model potential for lateral double quantum dots (DQDs) and for triple quantum dots (TQDs). The successful applications of the 2D FDM were observed with the entanglements in the DQDs. The level-splitting and anticrossing behaviors of the DQDs could be obtained by varying the distance between the dots and by introducing asymmetry in the well-depths. The 2D FDM results for linear/triangular TQDs were compared with the tight binding approximations.

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

A quantum computer is a computer composed of quantum bits (qubits) that takes advantage of quantum effects, such as superposition of states and entanglement, to solve certain problems exponentially faster than with the best known algorithms on a classical computer. Gate-defined lateral quantum dots on GaAs/AlGaAs are one of many avenues explored for the implementation of a qubit. When properly fabricated, such a device is able to trap a small number of electrons in a certain region of space. The spin states of these electrons can then be used to implement the logical 0 and 1 of the quantum bit. Given the nanometer scale of these quantum dots, cleanroom facilities offering specialized equipment- such as scanning electron microscopes and e-beam evaporators- are required for their fabrication. Great care must be taken throughout the fabrication process to maintain cleanliness of the sample surface and to avoid damaging the fragile gates of the structure. This paper presents the detailed fabrication protocol of gate-defined lateral quantum dots from the wafer to a working device. Characterization methods and representative results are also briefly discussed. Although this paper concentrates on double quantum dots, the fabrication process remains the same for single or triple dots or even arrays of quantum dots. Moreover, the protocol can be adapted to fabricate lateral quantum dots on other substrates, such as Si/SiGe.

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Tuning the growth properties of Ge quantum dot lattices in amorphous oxides by matrix type

Self-assembled growth of Ge quantum dot lattices in oxide matrices prepared by the quite simple magnetron sputtering deposition method allows the preparation of a variety of structures tunable by their shape, size and arrangement. The driving mechanism for the self-assembly was attributed to the surface morphology features originating from the quantum dots' growth. Here it is shown specifically that the matrix type is another critical factor that enables the control of the self-assembly process and the tuning of the ordering type and degree of regularity of quantum dot systems. The effectiveness of the matrix factor is demonstrated through the analysis of quantum dot arrangements in amorphous silica, alumina and mullite matrices. Using the same deposition conditions, different ordering types and degrees of disorder were found in the quantum dot systems based on different matrices. The matrix factor is shown to be driven by different matrix tendencies to smooth the surface during the growth of the films. The obtained results are relevant for understanding and tailoring of the self-assembled growth of quantum dot lattices in amorphous systems.

Spin-flip phonon-mediated charge relaxation in double quantum dots

We theoretically study the $(1,1)$ triplet to $(0,2)$ singlet relaxation rate in a lateral gate-defined double quantum dot tuned to the regime of Pauli spin blockade. We present a detailed derivation of the effective phonon density of states for this specific charge transition, keeping track of the contribution from piezoelectric as well as deformation potential electron-phonon coupling. We further investigate two different spin-mixing mechanisms which can couple the triplet and singlet states: a magnetic field gradient over the double dot (relevant at low external magnetic field) and spin-orbit interaction (relevant at high field), and we also indicate how the two processes could interfere at intermediate magnetic field. Finally, we show how to combine all results and evaluate the relaxation rate for realistic system parameters.

Exchange interaction in chirally coupled quantum dots

We present transport measurements on a system of two lateral quantum dots in a perpendicular magnetic field. Due to edge channel formation in an open conducting region, the quantum dots are chirally coupled. When both quantum dots are tuned into the Kondo regime simultaneously, we observe a change in the temperature dependence of the differential conductance. This is explained by the RKKY exchange interaction between the two dots. As a function of bias the differential conductance shows a splitting of the Kondo resonance which changes in the presence of RKKY interaction.

Spin-dependent shot noise enhancement in a quantum dot

The spin-dependent dynamical blockade was investigated in a lateral quantum dot in a magnetic field. Spin-polarized edge channels in the two-dimensional leads and the spatial distribution of Landau orbitals in the dot modulate the tunnel coupling of the quantum dot level spectrum. In a measurement of the electron shot noise we observe a pattern of super-Poissonian noise which is correlated to the spin-dependent competition between different transport channels.

Influence of annealing conditions on the structural and photoluminescence properties of Ge quantum dot lattices in a continuous Ge + Al2 O3 film

We investigate the structural and photoluminescence (PL) properties of regularly ordered lattices of Ge quantum dots (QDs) formed by self-assembly in a thick film of Ge + Al2O3 mixture. The effects of annealing at different temperatures and different annealing environments (vacuum and air) are studied. We show that the regular ordering of QDs remains unchanged for annealing up to 800 °C in vacuum, while it is preserved up to 700 °C when annealing is performed in air. The inner/crystalline structure of Ge QDs and their shape depend on the annealing conditions. The crystalline grains of γ-Al2O3 form in the initially amorphous Al2O3 matrix after annealing at 800 °C. The PL spectra are found to consist of two main contributions, one from the matrix and the other from Ge QDs. Both contributions depend strongly on the annealing conditions. The annealing treatment of Ge quantum dot lattices formed by self-assembly in alumina matrix influence significantly the internal structure and photoluminescence properties of the films.

Raman spectroscopy of very small Cd1−xCoxS quantum dots grown by a novel protocol: direct observation of acoustic‐optical phonon coupling

Glass‐embedded Cd1−xCoxS quantum dots (QDs) with mean radius of R ≈ 1.70 nm were successfully synthesized by a novel protocol on the basis of the melting‐nucleation synthesis route and herein investigated by several experimental techniques. Incorporation of Co2+ ions into the QD lattice was evidenced by X‐ray diffraction and magnetic force microscopy results. Optical absorption features with irregular spacing in the ligand field region confirmed that the majority of the incorporated Co2+ ions are under influence of a low‐symmetry crystal field located near to the Cd1−xCoxS QD surface. Electron paramagnetic resonance data confirmed the presence of Co2+ ions in a highly inhomogeneous crystal field environment identified at the interface between the hosting glass matrix (amorphous) and the crystalline QD. The acoustic‐optical phonon coupling in the Cd1−xCoxS QDs (x ≠ 0.000) was directly observed by Raman measurements, which have shown a high‐frequency shoulder of the longitudinal optical phonon peak. This effect is tuned by the size‐dependent sp‐d exchange interaction due to the magnetic doping, causing variations in the coupling between electrons and longitudinal optical phonon. Copyright © 2013 John Wiley & Sons, Ltd.

Growth of a three-dimensional anisotropic lattice of Ge quantum dots in an amorphous alumina matrix

Simple processes for the preparation of semiconductor quantum dot lattices embedded in dielectric amorphous matrices play an important role in various nanotechnology applications. Of particular interest are quantum dot lattices with properties that differ significantly in different directions parallel to the material surface. Here, a simple method is demonstrated for the fabrication of an anisotropic lattice of Ge quantum dots in an amorphous Al2O3matrix by a self-assembly process. A specific deposition geometry with an oblique incidence of the Ge and Al2O3adparticles was used during magnetron sputtering deposition to achieve the desired anisotropy. The observed Ge quantum dot ordering is explained by a combination of directional diffusion of adparticles from the Ge and Al2O3targets and a shadowing process which occurs during deposition as a result of the specific surface morphology. The prepared material shows a strong anisotropy of the electrical conductivity in different directions parallel to the sample surface.

Spin-orbit coupled particle in a spin bath

We consider a spin-orbit coupled particle confined in a quantum dot in a bath of impurity spins. We investigate the consequences of spin-orbit coupling on the interactions that the particle mediates in the spin bath. We show that in the presence of spin-orbit coupling, the impurity-impurity interactions are no longer spin-conserving. We quantify the degree of this symmetry breaking and show how it relates to the spin-orbit coupling strength. We identify several ways how the impurity ensemble can in this way relax its spin by coupling to phonons. A typical resulting relaxation rate for a self-assembled Mn-doped ZnTe quantum dot populated by a hole is 1 $\mu$s. We also show that decoherence arising from nuclear spins in lateral quantum dots is still removable by a spin echo protocol, even if the confined electron is spin-orbit coupled.

Fast and efficient single electron transfer between distant quantum dots

Lateral quantum dots are a promising system for quantum information processing devices. The required basic manipulations of a single electron spin have indeed been demonstrated. However, a stringent requirement is the ability to transfer quantum information from place to place within one sample. In this work, we explore and demonstrate the possibility to transfer a single electron between two distant quantum dots in a fast and reliable manner.

Two-dimensional energy transfer between self-assembled quantum dots modulated by an external electric field

Energy transfer processes between InAs/GaAs self-assembled quantum dots within an intrinsic region of a p-i-n device have been studied. Three emission peaks associated with quantum dots (QDs) energy states could be identified in the photoluminescence (PL) spectrum in such a way that the energy transfer between lateral QDs could be individualized for each state. Using the spatially resolved micro-PL technique, several scans have been performed in the whole range of QDs emissions at different values of direct applied bias Vb. Curves were fitted according to the diffusion theory, and the parameters associated with the energy transfer (L) were plotted as a function of Vb and the QD recombination energy. We found that the energy transfer between QDs is faster for lower energy states and increases, with different rates, for each QD energy state by increasing the direct applied bias. The energy transfer process has been associated with the carrier diffusion within the barriers. We also found that the energy transfer between QDs decreases linearly with the electron-hole recombination energy. From this result, we conclude that the energy transfer phenomenon occurs following a Gaussian distribution of diffusing carriers, in which the concentrations of electron-hole pairs far away from the origin are just enough to fill the lower energy states of QDs.

Coulomb interaction signatures in self-assembled lateral quantum dot molecules

We use photoluminescence spectroscopy to investigate the ground state of single self-assembled InGaAs lateral quantum dot molecules. We apply a voltage along the growth direction that allows us to control the total charge occupancy of the quantum dot molecule. Using a combination of computational modeling and experimental analysis, we assign the observed discrete spectral lines to specific charge distributions. We explain the dynamic processes that lead to these charge configurations through electrical injection and optical generation. Our systemic analysis provides evidence of interdot tunneling of electrons as predicted in previous theoretical work.

Enhancement-Mode Buried Strained Silicon Channel Double Quantum Dot with Integrated Electrometer

We proposed and demonstrated an enhancement-mode SiGe/strained-Si stack for a quantum dot [1], which both spaces the quantum dot away from interface defects and removes dopants. Smooth and predictable potentials for single electron quantum dots are highly desirable for beyond Moore's law approaches like quantum annealing and quantum computing. Enhancement-mode SiGe/sSi field-effect transistors (FETs) have been demonstrated previously [2,3] and have recently achieved mobilities as high as 1.6x106 cm2/V s [4], indicating that a smooth potential approaching other model systems like GaAs can be produced in Si. This material stack has subsequently been used successfully by a different group to produce coherent qubit spin rotations [5]. We report in this letter that low-disorder quantum dots can be formed using a double-top-gated lateral quantum dot nanostructure, defined using 180 nm line width platform and fabricated in a 150 mm wafer batch-processing tool set in the Sandia National Labs silicon foundry. This is an important step towards showing that defects, lithography and process tolerances in a Si foundry are sufficient to build low disorder double quantum dots for both quantum computing and quantum annealing.

Self-Sustaining Dynamical Nuclear Polarization Oscillations in Quantum Dots

Early experiments on spin-blockaded double quantum dots revealed robust, large-amplitude current oscillations in the presence of a static (dc) source-drain bias. Despite experimental evidence implicating dynamical nuclear polarization, the mechanism has remained a mystery. Here we introduce a minimal albeit realistic model of coupled electron and nuclear spin dynamics which supports self-sustained oscillations. Our mechanism relies on a nuclear spin analog of the tunneling magnetoresistance phenomenon (spin-dependent tunneling rates in the presence of an inhomogeneous Overhauser field) and nuclear spin diffusion, which governs dynamics of the spatial profile of nuclear polarization. The proposed framework naturally explains the differences in phenomenology between vertical and lateral quantum dot structures as well as the extremely long oscillation periods.

Ge quantum dot lattices in Al2O3 multilayers

In this article, we show how to produce materials consisting of regularly ordered Ge quantum dot lattices in an amorphous alumina matrix with a controllable Ge quantum dot size, shape, spacing, crystalline structure, and degree of regularity in their ordering. The production of such materials is achievable already at room temperature by magnetron sputtering deposition of a (Ge + Al2O3)/Al2O3 multilayer. The materials show photoluminescence in the visible and ultraviolet light range, a size-dependent blue shift of the photoluminescence peak and an enhancement of its intensity by size reduction, indicating the quantum dot origin of the photoluminescence. The materials also exhibit excellent mechanical properties due to the alumina matrix. Their internal structure is shown to be highly resistive to irradiation with energetic particles for a large range of the irradiation parameters.