Cu(In, Ga)Se2 thin films were fabricated by an in situ fabrication process of ion beam sputtering deposition without post-selenization. X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy and four-point probe technique were used to study the microstructures, surface morphology, composition and electrical properties, respectively. The results show that the films grown above 400 °C are of chalcopyrite structure and Cu (In0.7Ga0.3) Se2 thin film was obtained at annealing temperature of 550 °C. With the increase in annealing temperature, the resistivity of the films decreases while the component is nearly steady. The degree of crystallization of the thin films increased at first with increasing of the annealing time and then decreased with the annealing time increasing further. It was demonstrated that the structural and electrical properties of the films improved significantly with adding selenium amount by sputtering selenium.
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