Pyroelectric infrared (IR) sensors were fabricated from aromatic polyurea by vapor deposition polymerization. Voltage sensitivity ( R v ), noise voltage, and detectivity ( D∗(500,1,1)) of a sensor fabricated on a glass substrate were 2.6 V W −1, 0.35 μV, and 3.3 × 10 6 cm Hz 1 2 W −1 , respectively. R v and D∗ were increased by improving thermal insulation and thermal absorption efficiency, and by employing a multi-pyroelectric layer structure. An IR sensor fabricated on a thermally insulated Si wafer had better frequency characteristics than a sintered LiTaO 3 ceramic sensor. The rise time of the sensor was about 6 ms. A pyroelectric linear array of 128 sensor elements fabricated on a thermally insulated Si wafer showed an average voltage sensitivity and detectivity of 4000 V W −1 and 1 × 10 6 cm Hz 1 2 W −1 , respectively.