Lasing has been observed in several semiconductors pumped by electrons from a pulsed 5-to 20-kV vacuum arc. This method of pumping eliminates the hot-cathode multielement electron gun and magnetic focusing means usually required for electron-beam generation. At temperatures of 77 K and room temperature, CdS has shown well-defined lasing with narrow directional output and sharp spectral lines. CdSe and GaAs have shown similar evidence of lasing at 77 K. The new technique opens up some possibilities for simple compact laser devices.
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