Protected Surface States Research Articles

Controlled Vapor-Liquid-Solid Growth of Long and Remarkably Thin Pb1-xSnxTe Nanowires with Strain-Tunable Ferroelectric Phase Transition.

The Pb1-xSnxTe family of compounds possess a wide range of intriguing and useful physical properties, including topologically protected surface states, robust ferroelectricity, remarkable thermoelectric properties, and potential topological superconductivity. Compared to bulk crystals, one-dimensional (1D) nanowires (NWs) offer a unique platform to enhance the functional properties and enable new capabilities, e.g., to realize 1D Majorana zero modes for quantum computations. However, it has been challenging to achieve controlled synthesis of ultrathin Pb1-xSnxTe (0 ≤ x ≤ 1) nanowires in the truly 1D region. In this work, we report on a Au-catalyzed vapor-liquid-solid (VLS) growth of remarkably thin (20-30 nm) and sufficiently long (several to tens of micrometers) Pb1-xSnxTe nanowires of high single-crystalline quality in a controlled fashion. This controlled growth was achieved by enhancing the incorporation of Te into the Au catalyst particle to facilitate the precipitation of the Sn/Pb species and suppress the enlargement of the particle, which we identified as a major challenge for the growth of ultrathin nanowires. Our growth strategy can be easily extended to other compound and alloy nanowires, where the constituent elements have different incorporation rates into the catalyst particle. Furthermore, the growth of thin Pb1-xSnxTe nanowires enabled strain-dependent electrical transport measurements, which shows an enhancement of electrical resistance and ferroelectric transition temperature induced by uniaxial tensile strain along the nanowire axial direction, consistent with density functional theory calculations of the structural phase stability.

Electrochemical Platform Based on the Bi2Te3 Family of Topological Insulators for the Detection of SARS-CoV-2 Pathogenic Factors.

Accurate and rapid detection of the causative agent of a disease is of great importance in controlling the spread of the disease. This work developed a biosensor with the Bi2Te3 family of topological insulators for detection of the SARS-CoV-2 virulence factor. The Bi2Te3 family is a three-dimensional topological insulator material with topologically protected surface states; the presence of these surface states facilitates charge transfer between the electrode and electrolyte interface. Compared with the detection performance of Bi2Se3, BiSbTeSe2, and a trivial insulator like Sb2Se3, Bi2Te3 exhibits superior characteristics. A Bi2Te3 electrochemical detection platform is utilized to fabricate a sensor that can detect SARS-CoV-2 DNA, RNA, and antigen for label-free target detection. The concentration range of DNA detection by the biosensor using Bi2Te3 is between 1.0 × 10-15 and 1.0 × 10-10 M, and the detection limit can reach 1.41 × 10-16 M. Furthermore, it exhibits excellent selectivity and maintains good stability even after being stored for 14 days. This study provides a new way to apply topological insulator materials in the field of biosensors and use their unique electronic structure to improve the accuracy and speed of disease detection and diagnosis.

Unconventional magnetoresistance and resistivity scaling in amorphous CoSi thin films

The resistivity scaling of Cu electrical interconnects represents a critical challenge in Si CMOS technology. As interconnect dimensions reach below 10 nm, Cu resistivity increases significantly due to surface scattering. Topological materials have been considered for application in ultra-scaled interconnects (below 5 nm), due to their topologically protected surface states that have reduced electron scattering. Recent theoretical work on the topological chiral semimetal CoSi suggests that this material could offer lower resistivity than Cu at dimensions smaller than 10 nm. Here we investigate the scaling trend of textured and amorphous CoSi thin films, deposited by molecular beam epitaxy in a thickness range between 2 and 82.5 nm. Contrary to predictions of standard resistivity models, we report here a reduction in resistivity for thin amorphous CoSi films, which is instead consistent with surface-dominated transport. Moreover, magnetotransport measurements reveal significant enhancement of the magnetoresistance in scaled films, highlighting the complex transport mechanisms present in these highly disordered films at thicknesses of a few nanometers.

Revealing the nontrivial topological surface states of catalysts for effective photochemical carbon dioxide conversion

Topological semimetals with protected surface states mark a new paradigm of research beyond the early landmarks of band-structure engineering, allowing fabrication of efficient catalyst to harness the rich metallic surface states to activate specific chemical processes. Herein, we demonstrate a facile solid-phase method for in-situ doping of Ir at the Os sites in the Os3Sn7, an alloy with topological states, which significantly improves the photocatalytic performance for the reduction of CO2 to CO and CH4. Experimental evidence combined with theoretical calculations reveal that the nontrivial topological surface states greatly accelerate charge-separation/electron-enrichment and adsorption/activation of CO2 molecules, rendering highly efficient reaction channels to stimulate the formation of *COOH and *CO, as well CHO*. This work shows the promise of achieving high photocatalytic performances with synthesizing topological catalysts and provides hints on the design of novel topological catalysts with superior photoactivity towards the CO2 reduction reaction.

Large out-of-plane spin–orbit torque in topological Weyl semimetal TaIrTe4

The unique electronic properties of topological quantum materials, such as protected surface states and exotic quasiparticles, can provide an out-of-plane spin-polarized current needed for external field-free magnetization switching of magnets with perpendicular magnetic anisotropy. Conventional spin–orbit torque (SOT) materials provide only an in-plane spin-polarized current, and recently explored materials with lower crystal symmetries provide very low out-of-plane spin-polarized current components, which are not suitable for energy-efficient SOT applications. Here, we demonstrate a large out-of-plane damping-like SOT at room temperature using the topological Weyl semimetal candidate TaIrTe4 with a lower crystal symmetry. We performed spin–torque ferromagnetic resonance (STFMR) and second harmonic Hall measurements on devices based on TaIrTe4/Ni80Fe20 heterostructures and observed a large out-of-plane damping-like SOT efficiency. The out-of-plane spin Hall conductivity is estimated to be (4.05 ± 0.23)×104 (ℏ ⁄ 2e) (Ωm)−1, which is an order of magnitude higher than the reported values in other materials.

Surface-dominated conductance scaling in Weyl semimetal NbAs

Protected surface states arising from non-trivial bandstructure topology in semimetals can potentially enable advanced device functionalities in compute, memory, interconnect, sensing, and communication. This necessitates a fundamental understanding of surface-state transport in nanoscale topological semimetals. Here, we investigate quantum transport in a prototypical topological semimetal NbAs to evaluate the potential of this class of materials for beyond-Cu interconnects in highly-scaled integrated circuits. Using density functional theory (DFT) coupled with non-equilibrium Green’s function (NEGF) calculations, we show that the resistance-area RA product in NbAs films decreases with decreasing thickness at the nanometer scale, in contrast to a nearly constant RA product in ideal Cu films. This anomalous scaling originates from the disproportionately large number of surface conduction states which dominate the ballistic conductance by up to 70% in NbAs thin films. We also show that this favorable RA scaling persists even in the presence of surface defects, in contrast to RA sharply increasing with reducing thickness for films of conventional metals, such as Cu, in the presence of surface defects. These results underscore the potential of topological semimetals as future back-end-of-line (BEOL) interconnect metals.

Topological insulator MnBi2Te4 and its van der Waals heterostructure for sensitive room-temperature terahertz photodetection

Dirac fermions are a distinctive feature of topological insulators (TIs) due to the existence of topologically protected surface states, making TIs a promising choice for long-wavelength photodetection. However, TIs-based photodetection often suffers from significant dark current. This paper demonstrates broadband detection through the direct generation of photocarriers in metal-MnBi2Te4 (MBT) -metal structures at room temperature. By integrating MBT and Bi2Te3 into van der Waals structures, the heterostructure device can reduce dark current and have excellent sensitivity at room temperature. Especially, MBT/Bi2Te3 photodetectors have a fast response time (<1 μs) and low noise equivalent power <0.5 nW Hz−1/2 at self-powered mode due to photothermoelectric conversion. The MBT/Bi2Te3 photodetector detects low-energy photons through the hybrid integration of new low-dimensional materials that will be already suitable for imaging applications, further emphasizing the unique advantages of TIs in the field of terahertz technology.

Observation of elastic Weyl points in ferroelectric based sonic metamaterials

The study of Weyl points in electronic systems has recently inspired extensive research in classical systems, such as photonic and acoustic lattices. We construct a single-phase three-dimensional structure, an analog of the honeycomb lattice, and then predict the existence of Weyl points with opposite topological charges (±1) as well as the associated gapless topologically protected surface states. We apply full-scale numerical simulations on the elastic three-dimensional structure and present a clear visualization of the topological surface states that are directional and robust. Such designed lattices can pave the way for novel vibration control and energy harvesting on structures that are ubiquitous in many engineering applications.

Optical conductivity of a Bi2Se3 topological insulator with a THz transparent top gate

Abstract We have performed an investigation into the optical conductivity and magnetotransport properties of top-gated devices patterned on the topological insulator Bi2Se3 in order to determine the relative effects of the different carrier species that exist within these novel materials. We find that the topologically protected surfaces within our samples are partially screened from the action of the gate by trivial band-bending states formed at the top surface of the topological insulator. Despite this, the mobility of the topological surface carriers is significantly affected by the application of an external gate bias. Additionally, we find that the optical conductivity response is dominated by the topologically protected surface states, and that the optical conductivity is particularly sensitive to the scattering caused by the topological surfaces coupling to trivial states, arising from the bulk or band-bending induced surface states. These results will have interesting applications to the design of future plasmonic devices that incorporate topological materials.

Anisotropic multiband superconductivity in 2M−WS2 probed by controlled disorder

The intrinsically superconducting Dirac semimetal 2M−WS2 is a promising candidate for realizing proximity-induced topological superconductivity in its protected surface states. A precise characterization of the bulk superconducting state is essential to understand the nature of surface superconductivity in the system. Here, we report a detailed experimental study of the temperature-dependent London penetration depth, λ(T), the upper critical field, Hc2(T), and the effects of nonmagnetic disorder on these quantities, as well as on the superconducting transition temperature Tc in single crystals of 2M−WS2. We observe a power-law variation of λ(T)∝T3 at temperatures below 0.35Tc. Nonmagnetic pointlike disorder induced by 2.5 MeV electron irradiation at various doses results in a significant suppression of Tc. These observations are markedly different from expectations for a fully gapped isotropic s−wave superconductor. Together with the substantial increase of slope, dHc2/dT|T=Tc, with increasing disorder, our results suggest a strongly anisotropic s++ multiband superconducting state. These results have direct consequences for the expected proximity-induced superconductivity of the topological surface states. Published by the American Physical Society 2024

Multiple channel transport properties of topological surface states in SmB6 nanoribbons

SmB6, a topological Kondo insulator, possesses topologically protected surface states, in which carrier mobility is supposed to be high but is significantly varied in orders of magnitude dependent upon characterization methods. Herein, we performed magnetoresistance measurements on a Hall-bar device constructed on a highly uniform SmB6 nanoribbon with (001) surface grown by chemical vapor deposition. Unusual non-linear Hall resistance was observed at low temperature and explained with a two-carrier model. The two types of carriers were attributed to two types of Fermi pockets on the Brillouin zone of the SmB6 (001) surface. The Fermi pocket on Γ point provided high hole mobility up to 1.4×103 cm2/V s but low hole density at a temperature of 2.2 K. On the other hand, the Fermi pockets on X points supplied low electron mobility down to 1.8 cm2/V s but high electron density. The identification of the two types of pockets laid the foundation for the understanding of the transport via the topological surface states of the SmB6 (001) surface.

Unveiling Local Optical Properties Using Nanoimaging Phase Mapping in High-Index Topological Insulator Bi2Se3 Resonant Nanostructures.

Topological insulators are materials characterized by an insulating bulk and high mobility topologically protected surface states, making them promising candidates for future optoelectronic and quantum devices. Although their electronic properties have been extensively studied, their mid-infrared (MIR) properties and prospective photonic capabilities have not been fully uncovered. Here, we use a combination of far-field and near-field nanoscale imaging and spectroscopy to study chemical vapor deposition-grown Bi2Se3 nanobeams (NBs). We extract the MIR optical constants of Bi2Se3, revealing refractive index values as high as n ∼ 6.4, and demonstrate that the NBs support Mie resonances across the MIR. Local near-field reflection phase mapping reveals domains of various phase shifts, providing information on the local optical properties of the NBs. We experimentally measure up to 2π phase-shift across the resonance, in excellent agreement with finite-difference time-domain simulations. This work highlights the potential of Bi2Se3 for quantum circuitry, nonlinear generation, high-Q metaphotonics, and photodetection.

Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb2Te3/Bi2Te3 Topological Insulator Heterostructure for Spin-Charge Conversion.

Properly tuning the Fermi level position in topological insulators is of vital importance to tailor their spin-polarized electronic transport and to improve the efficiency of any functional device based on them. Here, we report the full in situ metal organic chemical vapor deposition (MOCVD) and study of a highly crystalline Bi2Te3/Sb2Te3 topological insulator heterostructure on top of large area (4″) Si(111) substrates. The bottom Sb2Te3 layer serves as an ideal seed layer for the growth of highly crystalline Bi2Te3 on top, also inducing a remarkable shift of the Fermi level to place it very close to the Dirac point, as visualized by angle-resolved photoemission spectroscopy. To exploit such ideal topologically protected surface states, we fabricate the simple spin-charge converter Si(111)/Sb2Te3/Bi2Te3/Au/Co/Au and probe the spin-charge conversion (SCC) by spin pumping ferromagnetic resonance. A large SCC is measured at room temperature and is interpreted within the inverse Edelstein effect, thus resulting in a conversion efficiency of λIEEE ∼ 0.44 nm. Our results demonstrate the successful tuning of the surface Fermi level of Bi2Te3 when grown on top of Sb2Te3 with a full in situ MOCVD process, which is highly interesting in view of its future technology transfer.

Anisotropic resistance with a 90° twist in a ferromagnetic Weyl semimetal, Co2MnGa

Weyl semimetals exhibit exotic magnetotransport phenomena such as the chiral anomaly and surface-to-bulk quantum oscillations (Weyl orbits) due to chiral bulk states and topologically protected surface states. Here we report a unique transport property in crystals of the ferromagnetic nodal-line Weyl semimetal Co2MnGa that have been polished to micron thicknesses using a focused ion beam. These thin crystals exhibit a large planar resistance anisotropy (10 × ) with axes that rotate by 90 degrees between opposite faces of the crystal. We use symmetry arguments and electrostatic simulations to show that the observed anisotropy resembles that of an isotropic conductor with surface states that are impeded from hybridization with bulk states. The origin of these states awaits further experiments that can correlate the surface bands with the observed 90° twist.

High performance broadband photodetector in two-dimensional metal dichalcogenides mediated by topologically protected surface state

Carrier scattering in photodetectors employing 2D dichalcogenide as an absorber impedes carrier transport. As scattering at the interface between the semiconductor and the electrode restricts carrier transport, it is essential to develop alternative electrode materials to achieve high photoresponsivity. A carrier can effectively move through a topologically protected Dirac surface state without scattering: i.e., alternatives such as topological insulators (TI) containing the surface state can effectively reduce scattering at the interface between the semiconductor and the electrode. In this stucy, TI Bi2Se3 with a well-ordered interfacial structure was used as a carrier transport layer (CTL) to effectively employ the topological surface state (TSS) for improving WSe2 photoresponsivity. At 520 nm, the Bi2Se3 TI-CTL photodetector has a photoresponsivity of up to 11.47 AW−1, 100 times higher than the photodevice using only Au electrodes. The photoresponsivity and time-resolved photoluminescence as a function of thickness indicate that TSS contributes to improved carrier separation with high carrier transfer efficiency, thereby affecting photocurrent generation. The fast carrier transfer through TSS helps efficiently separate electron-hole pairs and suppress recombination at the interface, generating ultra-fast and high-efficiency photocurrents in the broadband region (450–1550 nm). Therefore, TSS based on carrier dynamics can lead to further applications of next-generation optoelectronic devices.

Deep‐Subwavelength Resonant Meta‐Optics Enabled by Ultra‐High Index Topological Insulators

AbstractIn nanophotonics, small mode volumes, high‐quality factor resonances, and large field enhancements without metals fundamentally scale with the refractive index and are key for many implementations involving light‐matter interactions. Topological insulators (TIs) are a class of insulating materials that host topologically protected surface states, some of which exhibit extraordinarily high permittivity values. Here, the optical properties of TI bismuth telluride (Bi2Te3) single crystals are studied. It is found that both the bulk and surface states contribute to the extremely large optical constants, with the real part of the refractive index peaking at n ≈ 11. Utilizing these ultra‐high index values, it is demonstrated that Bi2Te3 metasurfaces are capable of squeezing light in deep‐subwavelength structures, with the fundamental magnetic dipole (MD) resonance confined in unit cell sizes smaller than λ/10. It is further shown that dense ultrathin metasurface arrays can simultaneously provide large magnetic and electric field enhancements arising from the high index of the bulk and the surface metallic states. These findings demonstrate the potential of chalcogenide TIs as a platform leveraging the unique combination of ultra‐high‐index dielectric response with surface metallic states for metamaterial design and nanophotonic applications in sensing, non‐linear generation, and quantum information.

Synthesis and characterization of half-Heusler ScPtBi films via three-source magnetron co-sputtering on Nb superconductor buffer layer

The half-Heusler compounds exhibit simultaneous electrical, optical, and magnetic properties hence extensive research efforts have recently been dedicated to their development in diverse applications. Herein, we detail the fabrication and magnetic characterization of thin film ScPtBi was grown at 300 °C on Nb-buffered Si (100) single crystals (Nb/Si (100)) by using magnetron co-sputtering. X-ray diffraction examinations have unveiled the polycrystalline growth nature of the films. It is seen that the obtained ScPtBi thin film is strained by 1.4% compared to the single crystal of ScPtBi. The morphological observations, conducted by scanning electron microscopy (SEM), revealed that the Nb buffer layer has a smooth and crack-free surface. Moreover, it has been observed that the Bi islands are formed on the surface of ScPtBi film, which is confirmed by the high-resolution scanning transmission electron microscopy (HR-STEM) analyses. The presence of the weak antilocalization (WAL) effect has been observed in the samples. The Hikami-Larkin-Nagaoka (HLN) equation was used to analyze experimental data, aiming to calculate the phase coherence length (lφ) and the coefficient α. As the temperature increased, the phase coherence length decreased from 39 nm to 24 nm. The coefficient α was determined to be in the range of 500 to 1100. As a result, it has been concluded that the presence of the WAL effect might be connected to the strong spin-orbit coupling (SOC) nature of the films instead of from topologically protected surface states.

Quantum size effects and transport properties of Bi2(Te1-xSex)3 3D-topological insulator thin films

In this work, it was established that the room-temperature thickness (d = 16–207 nm) dependences of the Seebeck coefficient, Hall coefficient, and electrical conductivity in n-Bi2(Te0.9Se0.1)3 topological insulator thin films grown on glass substrates, in the thickness range of d = 16–85 nm exhibit an undamped oscillatory behavior with a large amplitude and are well approximated by a harmonic function with a period Δd=(8.0 ± 0.5)nm. The anionic substitution leads to some changes in the quantum size effects manifestation. The experimental results are consistent with theoretical calculations of Δd based on the infinitely deep potential well model. A sustained character of the oscillations is attributed to topologically protected surface states.

Active Control Topological Valley Modes in Metamaterial Plates

Phononic crystals and metamaterials have a unique band structure that allows for the existence of topologically protected surface states. The topologically protected edge states can guide elastic waves without significant scattering or loss of energy. One of the most promising applications of topological insulators in wave guiding is in the field of acoustics, where they can be used to design highly efficient and robust acoustic wave guides. However, the high efficiency, precision, reconfigurability, and robustness of elastic waves remains challenging. The topological insulators provide a feasible method to design high-efficiency, robust, and low-backscattering waveguides. In this work, a novel design of hexagonal metamaterial plates composed of a base plate and piezoelectric patches is proposed. The hexagonal metamaterial plate can generate robust topologically protected edge waves via active control. The paths of the topologically protected edge waves can be tuned by adjusting the control parameters. The robustness and efficiency of the proposed hexagonal metamaterial plate are testified to by the numerical examples. These findings provide systematic theoretical guidelines for designing reconfigurable wave guides, elastic wave splitters, and novel elastic wave devices and hold great promise for the development of high-performance and versatile wave guide technologies with potential applications in a wide range of fields.

Extraordinary bulk-insulating behavior in the strongly correlated materials FeSi and FeSb2

4f electron-based topological Kondo insulators have long been researched for their potential to conduct electric current via protected surface states, while simultaneously exhibiting unusually robust insulating behavior in their interiors. To this end, we have investigated the electrical transport of the 3d-based correlated insulators FeSi and FeSb2, which have exhibited enough similarities to their f electron cousins to warrant investigation. By using a double-sided Corbino disk transport geometry, we show unambiguous evidence of surface conductance in both of these Fe-based materials. In addition, by using a four-terminal Corbino inverted resistance technique, we extract the bulk resistivity as a function of temperature. Similar to topological Kondo insulator SmB6, the bulk resistivity of FeSi and FeSb2 is confirmed to exponentially increase by up to 9 orders of magnitude from room temperature to the lowest accessible temperature. This demonstrates that these materials are excellent bulk insulators, providing an ideal platform for studying correlated 2D physics.