Protected Surface States Research Articles

Designing Sb<sub>2</sub>Te<sub>3</sub> heterophase homostructure

<p indent="0mm">Antimony sesquitelluride (Sb₂Te₃) is the most important hosting material for the development of high-performance phase-change memory and brain-like computing technology. This material has two crystalline phases, namely, the metastable cubic rock-salt structure with 1/6 atomic sites taken by randomly distributed vacancies, and the stable rhombohedral phase with layered structures and vacant gaps in hexagonal stacking. The former is an Anderson insulator (AI) and serves as the key ingredient for memory applications, while the latter is a prototypical topological insulator (TI). In this work, we propose a new heterophase homostructure concept for Sb₂Te₃, which in principle could utilize both the topologically protected surface state of the rhombohedral phase and the Anderson localization features of the cubic phase in the bulk interior to achieve ultralow-loss electron transport. To sustain the topological surface state, the edges of the device should be kept in rhombohedral phase with the thickness larger than <sc>~4 nm.</sc> The bulk interior of the sample should be transformed into cubic phase with strong electron localization. According to our density functional theory (DFT) results, the layered atomic building blocks for the two phases are quite similar, though their stacking sequence and degree of structural disorder are different. Thanks to the similar structure and mass density of the two phases, lattice mismatch is not expected to be present at the interface of the heterophase homostructure, superior to heterostructures made of different materials. To lend support to this heterophase homostructure concept, we have prepared a <sc>~500 nm</sc> thick rhombohedral Sb₂Te₃ thin film on a silicon substrate via molecular beam epitaxy (MBE) and made an attempt to induce the phase transition in its bulk interior. A cross-sectional specimen for transmission electron microscopy (TEM) experiments was prepared by a dual beam focused ion beam (FIB) system. The TEM specimen along the electron beam direction was <sc>~80 nm.</sc> For standard TEM observation in short time, the damage brought by electron beam is very limited. However, when the electron beam was focused in an exposure area of <sc>~120 nm</sc> or below inside an electron microscope with a fixed accelerating voltage of <sc>200 keV,</sc> visible structural changes in the Sb₂Te₃ specimen were observed. A gradual structural transition from the stable rhombohedral phase to the metastable cubic phase was observed under extensive electron beam irradiation over <sc>90 min.</sc> The<italic> in situ </italic>high-resolution TEM experiments revealed a clear vacancy disordering induced metastabilization process in the Sb₂Te₃ specimen, where Sb atoms from the atomic stacks diffused into the vacant gap layers in Sb₂Te₃ and eventually triggered a structural change from rhombohedral to cubic Sb₂Te₃. Our DFT calculations corroborated this picture, which showed a systematic increase in total energy as the vacant gap was gradually filled in rhombohedral Sb₂Te₃. The bonding environment of the Sb atoms in the gap for the two phases is entirely different. For the cubic phase, the Sb atoms in the gap are located as the center of octahedral structures with the bond angle of ~90°, which is consistent with the Sb atoms in the original rhombohedral and cubic phase. In stark contrast, the Sb atoms in the gap layers of rhombohedral phase are in a distorted bonding environment with bond angles of both ~110° and ~90°, leading to a large energy penalty for the rhombohedral phase. When the concentration of vacancies in the target layers reached 50%–70%, a change in stacking sequence from rhombohedral to cubic stacking was triggered. The critical vacancy concentration was mainly affected by the degree of compressive strain perpendicular to the target layers. In summary, we have discussed the design concept of a Sb₂Te₃ based heterophase homostructure and demonstrated that this structure could be free of lattice mismatch via <italic>in situ</italic> TEM experiments and DFT calculations. Finally, we provided some guidelines for practical synthesis of Sb₂Te₃ heterophase homostructure samples to explore the interaction between topological physics and Anderson localization of electrons, and to fabricate potential electronic devices of ultra-low power consumption.

Multiple strong topological gaps and hexagonal warping in Bi4Te3

The electronic topology of ${\mathrm{Bi}}_{4}{\mathrm{Te}}_{3}$, composed of alternating ${\mathrm{Bi}}_{2}$ and ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$ layers, is investigated by density functional theory and angle-resolved photoemission spectroscopy. We find, remarkably, that there are three adjacent strong topological gaps with associated protected surface states within a 2-eV range of the Fermi level. The existence of three consecutive Dirac cones in $k$ space gives promise for alternative phenomena and applications, e.g., production of single photons with different energies (in the infrared and visible ranges) for multichannel transport of quantum information as well as multiple degrees of freedom in electron pumping for lasers. Additionally, a surface-state Fermi surface with strong hexagonal warping is observed.

Superior peroxidase mimetic activity induced by topological surface states of Weyl semimetal WTe2

Nanozymes, as promising alternatives that integrate the advantage of natural enzymes and nanomaterials are attracted enormous interest due to their low cost, environmental tolerance, high stability, as well as significant catalytic activity. Two-dimensional materials, transition metal dichalcogenides (TMDs) harbor the potential as peroxidase mimic which is attributed to the active edge sites and surface electron transfer capability. However, a challenge faced in peroxidase mimetic of TMDs is the low catalytic activity which originates from the inert structures. Here, we, for the first time, report that the typical Weyl semimetal WTe2 possesses the superior peroxidase-like performance toward H2O2, which derives from the two-step electron-pathway. We demonstrate a novel functionality of the Weyl semimetal through introducing topologically protected surface states (TSSs) for regulating the electron transfer processes. The underlying mechanism for TSSs promoting enzyme mimetic catalysis is attributed to the effective electron bath provided by the robust TSSs. Experiments and the first-principles calculations show that TSSs of WTe2 which serve as effective electron baths are directly involved in the two-step electron transfer process. In the first step, TSSs accept the electrons donated by the substrate which further enhances the substrate’s absorption. Upon H2O2 adsorption, the electrons are transferred out of TSSs and injected into the absorbed H2O2 orbitals. These findings offer a new linkage between the topological matters with TSSs and nanomaterials for enzyme mimicking.

Bi12Rh3Cu2I5: A 3D Weak Topological Insulator with Monolayer Spacers and Independent Transport Channels

Topological insulators (TIs) are semiconductors with protected electronic surface states that allow dissipation‐free transport. TIs are envisioned as ideal materials for spintronics and quantum computing. In Bi14Rh3I9, the first weak 3D TI, topology presumably arises from stacking of the intermetallic [(Bi4Rh)3I]2+ layers, which are predicted to be 2D TIs and to possess protected edge‐states, separated by topologically trivial [Bi2I8]2− octahedra chains. In the new layered salt Bi12Rh3Cu2I5, the same intermetallic layers are separated by planar, i.e., only one atom thick, [Cu2I4]2− anions. Density functional theory (DFT)‐based calculations show that the compound is a weak 3D TI, characterized by , and that the topological gap is generated by strong spin–orbit coupling (E g,calc. ∼ 10 meV). According to a bonding analysis, the copper cations prevent strong coupling between the TI layers. The calculated surface spectral function for a finite‐slab geometry shows distinct characteristics for the two terminations of the main crystal faces ⟨001⟩, viz., [(Bi4Rh)3I]2+ and [Cu2I4]2−. Photoelectron spectroscopy data confirm the calculated band structure. In situ four‐point probe measurements indicate a highly anisotropic bulk semiconductor (E g,exp. = 28 meV) with path‐independent metallic conductivity restricted to the surface as well as temperature‐independent conductivity below 60 K.

Large Linear Magnetoresistance and Evidence of Degeneracy Lifting of Valence Bands in Rhombohedral Phase of Topological Crystalline Insulator SnTe

A comprehensive magnetotransport study on a p‐type single crystal of SnTe topological crystalline insulator is reported, across the cubic‐to‐rhombohedral (R3m) transition atTs≈64 K. SnTe exhibits a large unsaturated linear magnetoresistance (LMR) reaching a value of 42% at 5 K and 8 T for (100) plane. LMR is found to have a direct dependence on the mobility and a detailed analysis shows that it follows the classical Parish‐Littlewood model of conductivity fluctuations arising from macroscopic inhomogeneities of tellurium interstitial atoms. Profound SdH oscillations having aπBerry phase are observed in the rhombohedral (R3m) phase having significantly lower carrier density ≈5.32 × 1011 cm−2at 2 K, which provides direct evidence of protected topological surface states in theR3mphase. The Hall conductivity shows a transformation from one band to two‐band behavior across the structural transition, thus providing an experimental evidence for the degeneracy lifting of bulk valence bands below the cubic symmetry breaking point which is consistent with recent band structure calculations. The overall results indicate that magnetotransport studies can distinctly probe the surface and bulk sensitive properties of SnTe, and can also track the band‐splitting of degenerate bands across the cubic‐to‐rhombohedral (R3m) transition.

Galvanomagnetic properties and thermoelectric power of ultrathin films of the bismuth-antimony system on a mica substrate

The study of the electronic properties of ultrathin films of pure bismuth and bismuth-antimony alloys is of interest, since an increase in conductivity with decreasing sample thickness was found. This paper presents the results of an experimental study of the structure, electrical, galvanomagnetic and thermoelectric properties of pure bismuth and Bi1-xSbx thin films (x=0.05 and 0.12) on a mica substrate in the thickness range of 10-30 nm. An increase in the conductivity with a decrease in the thickness of the samples was found. It may be due to the presence of topologically protected surface states. It is shown that the features of the manifestation of this effect are significantly influenced by the alloys band structure. The form of the temperature dependences of the Seebeck coefficient casts doubt on the fact that surface states have a positive effect on the thermoelectric efficiency of thin bismuth-antimony films. However, the detection of a positive thermoelectric power in Bi0.88Sb0.12 samples can become an important factor for searching for the possibility of creating a p-branch of thermoelectric converters. Keywords: bismuth, antimony, thin films, surface states, thermoelectric power.

Persistence of symmetry-protected Dirac points at the surface of the topological crystalline insulator SnTe upon impurity doping.

We investigate the effect of a non-magnetic donor impurity located at the surface of the SnTe topological crystalline insulator. In particular, the changes on the surface states due to a Sb impurity atom are analyzed by means of ab initio simulations of pristine and impurity-doped SnTe. Both semi-infinite and slab geometries are considered within the first-principles approach. Furthermore, minimal and Green's function continuum models are proposed with the same goal. We find that the Dirac cones are shifted down in energy upon doping; this shift strongly depends on the position of the impurity with respect to the surface. In addition, we observe that the width of the impurity band presents an even-odd behavior by varying the position of the impurity. This behavior is related to the position of the nodes of the wave function with respect to the surface, and hence it is a manifestation of confinement effects. We compare slab and semi-infinite geometries within the ab initio approach, demonstrating that the surface states remain gapless and their spin textures are unaltered in the doped semi-infinite system. In the slab geometry, a gap opens due to hybridization of the states localized at opposite surfaces. Finally, by means of a continuum model, we extrapolate our results to arbitrary positions of the impurity, clearly showing a non-monotonic behavior of the Dirac cone.

Гальваномагнитные свойства и термоэдс ультратонких пленок системы висмут--сурьма на подложке из слюды

The study of the electronic properties of ultrathin films of pure bismuth and bismuth-antimony alloys is of interest, since an increase in conductivity with decreasing sample thickness was found. This paper presents the results of an experimental study of the structure, electrical, galvanomagnetic and thermoelectric properties of pure bismuth and Bi1−x Sbx thin films (x = 0.05 and 0.12) on a mica substrate in the thickness range of 10−30 nm. An increase in the conductivity with a decrease in the thickness of the samples was found. It may be due to the presence of topologically protected surface states. It is shown that the features of the manifestation of this effect are significantly influenced by the alloys band structure. The form of the temperature dependences of the Seebeck coefficient casts doubt on the fact that surface states have a positive effect on the thermoelectric efficiency of thin bismuth-antimony films. However, the detection of a positive thermoelectric power in Bi0.88Sb0.12 samples can become an important factor for searching for the possibility of creating a p-branch of thermoelectric converters.

Anomalous Superconducting Proximity Effect in Bi2 Se3 /FeSe0.5 Te0.5 Thin-Film Heterojunctions.

The superconducting proximity effect (SPE) induces a superconductivity transition in otherwise non-superconducting thin films in proximity with a superconductor. The SPE usually occurs in real space and decays exponentially with film thickness. Herein, an abnormal SPE in a topological insulator (TI)/superconductor heterostructure is unveiled, which is attributed to the topologically protected surface state. Surprisingly, such abnormal SPE occurs in momentum space regardless of the TI film thickness, as long as the topological surface states are robust and form a continuous conduction loop. Combining transport measurements and scanning tunneling microscopy/spectroscopy techniques, the SPE in Bi2 Se3 /FeSe0.5 Te0.5 heterostructures is explored, where Bi2 Se3 is an ideal 3D topological insulator and FeSe0.5 Te0.5 a typical iron-based superconductor. As the thickness of the Bi2 Se3 thin film exceeds 400 nm, there still exists SPE-induced superconductivity on the surface of Bi2 Se3 thin film with a transition temperature Tc not less than 10 K. Such an extraordinary behavior is induced by the unique properties of topologically protected surface states of Bi2 Se3 . This research deepens the understanding of the important role of topologically protected surface states in the SPE.

An investigation of structural and magnetotransport features of half-Heusler ScPtBi thin films

Half-Heusler materials have grabbed enormous devotion from scientific community owing to their novel electrical, magnetic, and optical features. In this paper, we report on ScPtBi half-Heusler thin films grown at 200 and 300 °C on Ta/Si (100) substrates by magnetron co-sputtering. X-ray diffraction studies have proved a polycrystalline structure of the synthesized films. In addition, the film deposited at 300 °C has possessed a secondary PtBi phase. Cross-sectional microstructures and surface topographies of the films have been investigated via scanning transmission electron microscopy and scanning electron microscopy, respectively. The stoichiometric composition of the films has been investigated by X-ray photoelectron spectroscopy studies. Magnetotransport measurements, conducted by a conventional four-probe method in a temperature range of 5–300 K and at fields up to 9 T, have unveiled the existence of the weak antilocalization (WAL) effect in the examined samples. The phase coherence length, lφ, and the coefficient α have been extracted from the Hikami-Larkin-Nagaoka (HLN) relation. It has been shown that the extracted α values are between 800 and 1000, which highlights that the origin of the WAL effect results from the strong spin-orbit coupling (SOC) nature of the studied films rather than from topologically protected surface states. The Hall measurements performed at room temperature have shown that the major charge carriers are electrons and their mobility has been identified as 61 cm2.V−1.s−1 and 113 cm2.V−1.s−1 for the film deposited at 200 °C and 300 °C, respectively.

Growth of the intrinsic superlattice material Bi4Se3 by DC magnetron sputtering: Layered to faceted growth

The Bi4Se3 system is an intrinsic superlattice of two topological materials, a 2D Bi2 sheet and a quintuple layer (QL) slab of Bi2Se3. Both the QL slab and 2D sheet host distinct topologically protected states; this, in turn, allows for the selection of the topologically protected electronic state with the choice of surface layer termination. The Bi4Se3 films were grown by direct current magnetron sputtering under an additional external magnetic field to further confine the plasma region. We developed a recipe to transition from an atomically smooth layered growth to a smooth faceted granular growth. We characterized the morphology, composition, and local crystal orientation of grown films via scanning electron microscopy, energy dispersive x-ray spectroscopy, and electron backscattered diffraction. Additionally, characterization by scanning tunneling microscopy/spectroscopy confirmed the presence of the topologically protected surface states in these films. This work buttresses the commercial scalability of sputtering materials with tunable Bi4Se3 morphology, which provides the option of tuning the surface topological state and thus expanding the possibilities for the production of devices with this material systems.

Surface step states and Majorana end states in profiled topological-insulator thin films

The protected helical surface states in thin films of topological insulators (TI) are subject to inter-surface hybridisation. This leads to gap opening and spin texture changes as witnessed in photoemission and quasiparticle interference investigations. Theoretical studies show that universally the hybridisation energy exhibits exponential decay as well as sign oscillations as a function of film thickness, depending on the effective band parameters of the material. When a step is introduced in the TI film e.g. by profiling the substrate such that the hybridisation has different signs on both sides of the step, 1D bound states appear within the hybridisation gap which decay exponentially with distance from the step. The step bound states have linear dispersion and inherit the helical spin locking from the surface states and are therefore non-degenerate. When the substrate becomes an s-wave superconductor Majorana zero modes located at the step ends are created inside the superconducting gap. The proposed scenario involves just a suitably stepped interface of superconductor and TI and therefore may be a most simple device being able to host Majorana zero modes.

Mapping propagation of collective modes in Bi2Se3 and Bi2Te2.2Se0.8 topological insulators by near-field terahertz nanoscopy

Near-field microscopy discloses a peculiar potential to explore novel quantum state of matter at the nanoscale, providing an intriguing playground to investigate, locally, carrier dynamics or propagation of photoexcited modes as plasmons, phonons, plasmon-polaritons or phonon-polaritons. Here, we exploit a combination of hyperspectral time domain spectroscopy nano-imaging and detectorless scattering near-field optical microscopy, at multiple terahertz frequencies, to explore the rich physics of layered topological insulators as Bi2Se3 and Bi2Te2.2Se0.8, hyperbolic materials with topologically protected surface states. By mapping the near-field scattering signal from a set of thin flakes of Bi2Se3 and Bi2Te2.2Se0.8 of various thicknesses, we shed light on the nature of the collective modes dominating their optical response in the 2-3 THz range. We capture snapshots of the activation of transverse and longitudinal optical phonons and reveal the propagation of sub-diffractional hyperbolic phonon-polariton modes influenced by the Dirac plasmons arising from the topological surface states and of bulk plasmons, prospecting new research directions in plasmonics, tailored nanophotonics, spintronics and quantum technologies.

Anomalies in the temperature evolution of Dirac states in the topological crystalline insulator SnTe

Discovery of topologically protected surface states, believed to be immune to weak disorder and thermal effects, opened up a new avenue to reveal exotic fundamental science and advanced technology. While time-reversal symmetry plays the key role in most such materials, the bulk crystalline symmetries such as mirror symmetry preserve the topological properties of topological crystalline insulators (TCIs). It is apparent that any structural change may alter the topological properties of TCIs. To investigate this relatively unexplored landscape, we study the temperature evolution of the Dirac fermion states in an archetypical mirror-symmetry protected TCI, SnTe employing high-resolution angle-resolved photoemission spectroscopy and density functional theory studies. Experimental results reveal a perplexing scenario; the bulk bands observed at 22 K move nearer to the Fermi level at 60 K and again shift back to higher binding energies at 120 K. The slope of the surface Dirac bands at 22 K becomes smaller at 60 K and changes back to a larger value at 120 K. Our results from the first-principles calculations suggest that these anomalies can be attributed to the evolution of the hybridization physics with complex structural changes induced by temperature. In addition, we discover drastically reduced intensity of the Dirac states at the Fermi level at high temperatures may be due to complex evolution of anharmonicity, strain, etc. These results address robustness of the topologically protected surface states due to thermal effects and emphasize importance of covalency and anharmonicity in the topological properties of such emerging quantum materials.

Terahertz signatures of ultrafast Dirac fermion relaxation at the surface of topological insulators

Topologically protected surface states present rich physics and promising spintronic, optoelectronic, and photonic applications that require a proper understanding of their ultrafast carrier dynamics. Here, we investigate these dynamics in topological insulators (TIs) of the bismuth and antimony chalcogenide family, where we isolate the response of Dirac fermions at the surface from the response of bulk carriers by combining photoexcitation with below-bandgap terahertz (THz) photons and TI samples with varying Fermi level, including one sample with the Fermi level located within the bandgap. We identify distinctly faster relaxation of charge carriers in the topologically protected Dirac surface states (few hundred femtoseconds), compared to bulk carriers (few picoseconds). In agreement with such fast cooling dynamics, we observe THz harmonic generation without any saturation effects for increasing incident fields, unlike graphene which exhibits strong saturation. This opens up promising avenues for increased THz nonlinear conversion efficiencies, and high-bandwidth optoelectronic and spintronic information and communication applications.

Topological properties of bulk and bilayer 2M WS2: a first-principles study

Recently discovered 2M phase of bulk WS2 was observed to exhibit superconductivity with a critical temperature of 8.8 K, the highest reported among superconducting transition metal dichalcogenides. Also predicted to support protected surface states, it could be a potential topological superconductor. In the present study, we perform a detailed first-principles analysis of bulk and bilayer 2M WS2. We report a comprehensive investigation of the bulk phase, comparing structural and electronic properties obtained from different exchange correlation functionals to the experimentally reported values. By calculation of the Z 2 invariant and surface states, we give support for its non-trivial band nature. Based on the insights gained from the analysis of the bulk phase, we predict bilayer 2M WS2 as a new two-dimensional topological material. We demonstrate its dynamical stability from first-principles phonon computations and present its electronic properties, highlighting the band inversions between the W d and S p states. By means of Z 2 invariant computations and a calculation of the edge states, we show that bilayer 2M WS2 exhibits protected, robust edge states. The broken inversion symmetry in this newly proposed bilayer also leads to the presence of Berry curvature dipole and resulting non-linear responses. We compute the Berry curvature distribution and the dipole as a function of Fermi energy. We propose that Berry curvature dipole signals, which are absent in the centrosymmetric bulk 2M WS2, can be signatures of the bilayer. We hope our predictions lead to the experimental realization of this as-yet-undiscovered two-dimensional topological material.

Few-layer antimonene electrical properties

Antimonene -a single layer of antimony atoms- and its few layer forms are among the latest additions to the 2D mono-elemental materials family. Numerous predictions and experimental evidence of its remarkable properties including (opto)electronic, energetic or biomedical, among others, together with its robustness under ambient conditions, have attracted the attention of the scientific community. However, experimental evidence of its electrical properties is still lacking. Here, we characterized the electronic properties of mechanically exfoliated flakes of few-layer (FL) antimonene of different thicknesses (∼ 2–40 nm) through photoemission electron microscopy, kelvin probe force microscopy and transport measurements, which allows us to estimate a sheet resistance of ∼ 1200 Ω sq−1 and a mobility of ∼ 150 cm2V−1s−1 in ambient conditions, independent of the flake thickness. Alternatively, our theoretical calculations indicate that topologically protected surface states (TPSS) should play a key role in the electronic properties of FL antimonene, which supports our experimental findings. We anticipate our work will trigger further experimental studies on TPSS in FL antimonene thanks to its simple structure and significant stability in ambient environments.

Surface and Interface Bands of the CdTe–HgTe–CdTe Heterostructure: Evidence of Metallicity

Performed full-relativistic DFT calculations have demonstrated that thin HgTe layers are metallic and, with increasing thickness, do not become insulators – either ordinary band insulators or topological insulators. The variations of the potential at the CdTe–HgTe interfaces are found to be negligible in comparison with those at the terminating surfaces of the CdTe–HgTe–CdTe films, so that the interfaces in fact do not form any potential well. It is shown that the interface-related bands of the CdTe–HgTe–CdTe films are situated well below EF, so that a dominant input into the density of states at EF and, therefore, to the conductivity is provided not by the interface states, but by the surface bands of the net layered system. It is reasonable therefore to consider an alternative interpretation of the reported thickness dependence of the conductivity of the system, such as the possible surface segregation of components or unavoidable contaminations, which seems much more realistic than the interpretation based on involving topological insulators and topologically protected surface states.

Topological surface conduction in Kondo insulator YbB12

Kondo insulators have recently aroused great interest because they are promising materials that host a topological insulator state caused by the strong electron interactions. Moreover, recent observations of the quantum oscillations in the insulating state of Kondo insulators have come as a great surprise. Here, to investigate the surface electronic state of a prototype Kondo insulator YbB12, we measured the transport properties of single crystals and microstructures. In all samples, the temperature dependence of the electrical resistivity is insulating at high temperatures and the resistivity exhibits a plateau at low temperatures. The magnitude of the plateau value decreases with reducing sample thickness, which is quantitatively consistent with the surface electronic conduction in the bulk insulating YbB12. Moreover, the magnetoresistance of the microstructures exhibits a weak-antilocalization effect at low field. These results are consistent with the presence of a topologically protected surface state, suggesting that YbB12 is a candidate material for a topological Kondo insulator. The high field resistivity measurements up to µ 0 H = 50 T of the microstructures provide supporting evidence that the quantum oscillations of the resistivity in YbB12 occurs in the insulating bulk.

Finite transverse conductance and anisotropic magnetoconductance under an applied in-plane magnetic field in two-dimensional electron gases with strong spin–orbit coupling

The current in response to a bias in certain two-dimensional electron gas (2DEG), can have a nonzero transverse component under a finite magnetic field applied in the plane where electrons are confined. This phenomenon known as planar Hall effect (PHE) is accompanied by dependencies of both the longitudinal and the transverse components of the current on the angle ϕ between the bias direction and the magnetic field. This effect can be observed in a variety of systems, for example in topological insulators where spin-momentum locking of the topologically protected surface states is the root cause for the effect and in magnetic systems where anisotropic magnetic ordering induces it. In 2DEG with spin orbit coupling (SOC) such as oxide interfaces, this effect has been experimentally witnessed. Further, a fourfold oscillation in longitudinal resistance as a function of ϕ has also been observed. Motivated by these, we perform scattering theory calculations on a 2DEG with SOC in presence of an in-plane magnetic field connected to two-dimensional leads on either sides to obtain longitudinal and transverse conductances. We find that the longitudinal conductance is π-periodic and the transverse conductance is 2π-periodic in ϕ. The magnitude of oscillation in transverse conductance with ϕ is enhanced in certain patches in (α, b)-plane where α is the strength of SOC and b is Zeeman energy due to magnetic field. The oscillation in transverse conductance with ϕ can be highly multi-fold for large values of α and b. The highly multi-fold oscillations of transverse conductance are due to Fabry–Pérot type interference between the modes in the central region as backed by its length dependent features. Our study establishes that SOC in a material is sufficient to observe PHE without the need for anisotropic magnetic ordering or nontrivial topology of the bandstructure.