Thermoelectric Properties Of Materials Research Articles

Thermoelectric properties enhancement and optimization of SnTe-based material with single doping: RSM-ANN approach

Tin Telluride (SnTe) stands out among semiconductor materials, drawing attention as an environmentally friendly alternative to conventional Lead Telluride (PbTe). This study explores the novel incorporation of titanium (Ti) and zirconium (Zr) as dopant elements in SnTe-based materials, an approach that has never been previously investigated. Leveraging mathematical modeling and machine learning methodologies, we use Response Surface Methodology (RSM) and Artificial Neural Network-Genetic Algorithm (ANN-GA) to predict thermoelectric properties of SnTe-based materials and find the optimum dopant element addition and operating temperature. Eleven samples featuring varying Ti and Zr concentrations are employed in experimental investigations, with dopant amounts ranging from 0 to 0.05 M. Characterization of each sample is conducted across a temperature spectrum from 50 to 450 °C, yielding a comprehensive dataset of 99 entries for neural network model construction. The generated RSM and ANN models demonstrate remarkable predictive accuracy for the thermoelectric properties of SnTe-based materials, showcasing coefficient of determination (R2) values spanning from 0.986 to 0.998. This study uses RSM and ANN-GA to predict an optimized zT value of 0.558. This value surpasses the highest zT value from the experiment by 3.33 %. In conclusion, this investigation underscores the potency of RSM and ANN as valuable tools for advancing research on SnTe-based thermoelectric materials, exemplifying their capacity to hasten the exhausting process of finding the optimum dopant addition and operating temperature.

A general design framework of flexible thermoelectric devices bridging power requirements for wearable electronics

Wearable thermoelectric generators (WTEGs) promise sustainable power for wearable electronics with various strategies proposed for on-body applications. However, there is still a lack of power-demand-oriented system design that directly provides WTEG configurations tailored to targeted end electronics, resulting in sufficient power only under extreme ambience. To address this, we propose a straightforward, power-demand-oriented design framework for WTEGs that bridges the power requirements of end electronics. As we input the properties of thermoelectric materials, specific operational conditions (temperature and heat transfer coefficient), expected power output and required flexibility, the design framework can directly determine the geometric features of thermoelectric pillars and fill factor. The effectiveness has been widely verified using data from the literature, showing a mean absolute deviation of 7.1 %. This framework shows high working efficiency and significantly shortens the design process, which is the very first ever-reported design tool for WTEGs. As a case, we use the framework and design a skin-conformable thermoelectric textile (TET) with optimal structure configurations and enhanced heat transfer capabilities, achieving a high normalized power density of 4.48 μW cm−2 K−2. As expected, the TET, with a maximum power density of 231 μW cm−2 successfully powered a series of on-body electronics when attached to the forearm at a breezy ambient temperature of ∼283 K. On the other hand, the TET exhibits a cooling effect of 5.73 K. Our work provides a thermal design guide for WTEGs, shedding light on the direct connection between WTEG configurations and end electronics.

Effect of crosslinker molecular weight on the characteristics of thermoelectric ionogels

Abstract The present study investigates an ionic thermoelectric gel with adjustable functionality through the manipulation of crosslinker molecular weight. The thermoelectric properties of 2-hydroxyethyl acrylate (2-HEA) ionogels, prepared using PEGDA200, PEGDA575, and PEGDA1000 as crosslinkers, were thoroughly examined. Furthermore, dynamic thermal mechanical analysis (DMA) and X-ray diffraction (XRD) techniques were employed to elucidate the underlying reasons for variations in the thermoelectric material properties resulting from changes in crosslinker molecular weight. Notably, the thermoelectric gel synthesized with PEGDA575 exhibited a remarkable thermal power output of 19.19 mV•K-1 along with a tensile capacity of 231%. Additionally, the developed ionic thermoelectric capacitor demonstrated an impressive energy density of 4.288 J•m−2, thereby showcasing its potential application in flexible low-grade heat energy recovery devices.

Insights into One-Dimensional Thermoelectric Materials: A Concise Review of Nanowires and Nanotubes.

This brief review covers the thermoelectric properties of one-dimensional materials, such as nanowires and nanotubes. The highly localised peaks of the electronic density of states near the Fermi levels of these nanostructured materials improve the Seebeck coefficient. Moreover, quantum confinement leads to discrete energy levels and a modified density of states, potentially enhancing electrical conductivity. These electronic effects, coupled with the dominance of Umklapp phonon scattering, which reduces thermal conductivity in one-dimensional materials, can achieve unprecedented thermoelectric efficiency not seen in two-dimensional or bulk materials. Notable advancements include carbon and silicon nanotubes and Bi3Te2, Bi, ZnO, SiC, and Si1-xGex nanowires with significantly reduced thermal conductivity and increased ZT. In all these nanowires and nanotubes, efficiency is explored as a function of the diameter. Among these nanomaterials, carbon nanotubes offer mechanical flexibility and improved thermoelectric performance. Although carbon nanotubes theoretically have high thermal conductivity, the improvement of their Seebeck coefficient due to their low-dimensional structure can compensate for it. Regarding flexibility, economic criteria, ease of fabrication, and weight, carbon nanotubes could be a promising candidate for thermoelectric power generation.

The Normal/Umklapp/Intervally/Intravally transport property of 2D SnSe

Based on the Boltzmann transport equation, both the electrical and thermal transport properties of 2D SnSe have been accurately calculated. The mobility of n-type SnSe is higher than that of p type due to the greater average velocity and smaller electron-phonon coupling matrix. For both n-type and p-type electron-phonon scattering, the LA phonon mode primarily governs the total, Normal, Umklapp, Intervally, and Intravally scattering processes. As the temperature increases from 300K to 800K, the LA phonon remains the dominant scattering mode. Compared to the Umklapp and Intervally scattering process, both Normal and Intravally scattering processes mainly govern electrical transport. In terms of phonon-electron scattering, the Normal/Intravalley processes dominate initially, followed by the Umklapp/Intervalley processes governing thermal transport as the temperature increases, governing thermal transport. The critical carrier concentration changes from 1018 cm−3 to 1019 cm−3, as the temperature rises from 300K to 800K, indicating a shift in the competitive relationship between Normal/Intravalley and Umklapp/Intervalley processes with temperature. Using the iteration method, the optimal power factor for n type@300K, p type@300K, n type@800K, p type@800K are 1.63 μW/cmK, 5.62 μW/cmK, 2.30 μW/cmK, 4.04 μW/cmK, respectively. After considering phonon-electron scattering, the lattice thermal conductivity of n type (p type) is 0.70 W/mK (0.64 W/mK) at 300K and 0.31 W/mK (0.30 W/mK) at 800K. The optimal ZT of n type is 1.17 at 800K, originating from the Normal scattering process, while the optimal ZT of p type is 0.86, stemming from the Intravally scattering process. Our results provide a deeper understanding of the transport processes in SnSe and offer insights for tuning the thermoelectric properties of two-dimensional materials through electron-phonon and phonon-electron scattering processes.

Oxidation Control to Augment Interfacial Charge Transport in Te-P3HT Hybrid Materials for High Thermoelectric Performance.

Organic-inorganic hybrid thermoelectric (TE) materials have attracted tremendous interest for harvesting waste heat energy. Due to their mechanical flexibility, inorganic-organic hybrid TE materials are considered to be promising candidates for flexible energy harvesting devices. In this work, enhanced TE properties of Tellurium (Te) nanowires (NWs)- poly (3-hexylthiophene-2, 5-diyl) (P3HT) hybrid materials are reported by improving the charge transport at interfacial layer mediated via controlled oxidation. A power factor of ≈9.8µW(mK2)-1 is obtained at room temperature for oxidized P3HT-TeNWs hybrid materials, which increases to ≈64.8µW(mK2)-1 upon control of TeNWs oxidation. This value is sevenfold higher compared to P3HT-TeNWs-based hybrid materials reported in the literature. MD simulation reveals that oxidation-free TeNWs demonstrate better templating for P3HT polymer compared to oxidized TeNWs. The Kang-Snyder model is used to study the charge transport in these hybrid materials. A large σE0 value is obtained which is related to better templating of P3HT on oxygen-free TeNWs. This work provides evidence that oxidation control of TeNWs is critical for better interface-driven charge transport, which enhances the thermoelectric properties of TeNWs-P3HT hybrid materials. This work provides a new avenue to improve the thermoelectric properties of a new class of hybrid thermoelectric materials.

Recent advances in enhancing thermoelectric performance of polymeric materials

The inherent low thermal conductivity, low cost, and flexibility of polymeric materials make them potential candidates for thermoelectric applications. Their eco-friendliness and mechanical flexibility are useful for the design of portable and flexible self-powered electronics. However, the heat-to-electrical power conversion efficiency, also known as the figure-of-merit (ZT), of polymer TE materials is low. Research efforts are in progress to enhance the thermoelectric performance of polymers and to find new kinds of polymer composites. Recent research innovations, such as chemical doping of polymers, development of nanocomposites and hybrid composites, and nanostructuring have significantly changed the thermoelectric properties of the polymeric materials. In this article, we summarize the recent developments and achievements in polymer materials for thermoelectric applications.

Dual-phase competitive behavior in N-type Sn–Bi–Te thermoelectric films achieving high thermoelectric performance

The dual-phase competitive behavior is introduced as an effective strategy to optimize the physical and chemical properties of N-type Bi2Te3 thermoelectric (TE) materials. Controllable SnTe-embedded Bi2Te3 nanocomposites can be synthesized with the addition of excessive Sn into Bi2Te3 by tuning the crystallization behavior under proper thermal heating temperature. Notably, the precipitation temperature of Bi2Te3 increases from 473 ​K for Sn20.9(Bi2Te3)79.1 to 573 ​K for Sn34.4(Bi2Te3)65.6, expanding the controllable temperature span for the presence of SnTe phase. The second-phase nanoprecipitate SnTe can improve electrical conductivity by competing with the Bi2Te3 phase, achieving an increase of four orders of magnitude at the critical temperature of ∼500 ​K. Simultaneously, it increases the interfacial energy filtration effect between nanocrystalline grains, decoupling electrical parameters between conductivity and Seebeck coefficient. Consequently, the high power factor of ∼147 ​μW/mK2 at 650 ​K for optimized Sn26.6(Bi2Te3)73.4 films can be obtained, which is more than twice that of the pure Bi2Te3 material. Our work demonstrates a new physical mechanism to unravel the complicated structure-property relationship by dual-phase competitive behavior during phase transition. This study fills the gap in knowledge on the effects of the SnTe phase regarding the Bi2Te3 system and provides guidance for the innovative design of high-performing inorganic thermoelectrics.

Electronic structure, optical properties, and thermoelectric properties of Mg-doped GaN materials

This work was based on first principles calculations and investigated the electronic structure, optical properties, and thermoelectric properties of Mg doped GaN bulk materials. It analyzed the effect of Mg impurities defects on the properties of GaN bulk materials. Mg doping can transform GaN materials into p-type semiconductors, which is crucial for achieving p-n junctions or p-type layers in GaN based electronic devices. The calculation results showed that MgN-GaN and MgInterstitial-GaN(MgI-GaN) belong to n-type doping, while MgGa-GaN belongs to p-type doping. In addition, the optical properties and thermoelectric properties of different GaN doping models were calculated. It was found that the maximum ZT values of the MgN-GaN, MgGa-GaN, MgI-GaN doping models reached 4.46, 5.09 and 5.35, respectively. The Mg impurities can help improve the ZT value of semiconductors compared to intrinsic GaN material. This research result has significance for the application of GaN based semiconductor materials in thermoelectric fields.

Strain engineering of electronic structure and thermoelectric properties of quasi-hexagonal fullerene monolayer

As a newly synthesized two-dimensional (2D) carbon material, monolayer quasi-hexagonal phase fullerene (qHP C60) has an excellent electronic structure and low thermal conductivity. qHP C60 attracted significant attention from scientists because it has potential applications in thermoelectric materials. Thermoelectric properties of 2D materials significantly depend on the transport of carriers (such as electrons and phonons), and strain engineering is an essential method for modulating the transport of electrons and phonons in 2D materials. However, the strain engineering method for the modulation of the thermoelectric properties of monolayer qHP C60 has not been reported yet. In the present paper, the first-principles combined with the non-equilibrium Green's function method are used to investigate the ballistic transport properties of electrons and phonons in monolayer qHP C60. The effects of temperature, chemical potential, and biaxial tensile strain on the thermoelectric transport parameters (including conductivity, Seebeck coefficient, power factor, and thermal conductivity) as well as the figure of merit (ZT) of monolayer qHP C60 are presented, compared, discussed, and analyzed. We found that monolayer qHP C60 exhibits anisotropic characteristics in electron and phonon transport properties, showcasing outstanding thermoelectric properties. The distinctive quasi-hexagonal phase fullerene network structure offers a novel platform for exploring innovative 2D thermoelectric materials in research. This study provides crucial theoretical insights to guide the designing and implementation of 2D thermoelectric materials based on fullerenes.

Thermoelectric properties of reduced TiO2 -SrF2 composites

Highly stable thermoelectric materials based on inexpensive elements have great potential for heat recovery in high temperature applications. TiO2-d and SrTiO3 based thermoelectric materials are of great interest due to this reason. In this study TiO2–SrF2 based compounds were produced, to study the effect of fluorine on the thermoelectric properties of TiO2 type materials. From XPS measurements it is clear that some exchange from the TiO2–SrF2 happens forming a TiOxFy type phase. The electronic properties of the compound are very similar to the electronic properties of reduced TiO2 while some improvement is seen in the reduction of the thermal conductivity. A higher activation energy in the SrF2 rich samples might allow for increased electronic conductivity at higher temperatures interesting for further studies.

Improving Thermoelectric Performance of AgSbTe2 through Suppression of Ag2Te and Band Convergence via Mg and Ti Codoping.

In this study, the impact of codoping Mg and Ti on the thermoelectric performance of AgSbTe2 materials was investigated. Through a two-step synthesis process involving slow cooling and spark plasma sintering, AgSb0.98-xMg0.02TixTe2 samples were prepared. The introduction of Mg and Ti dopants effectively suppressed the formation of the undesirable Ag2Te phase. Density functional theory (DFT) calculations confirmed that Ti doping facilitated the band convergence, leading to a reduction in the effective mass of the carriers. This optimization enhanced carrier mobility and, consequently, electrical conductivity. Additionally, the codoping strategy resulted in the reinforcement of point defects, which contributed to a decrease in lattice thermal conductivity. The AgSb0.98-xMg0.02TixTe2 sample achieved a maximum figure of merit (ZT) value of 1.45 at 523 K, representing an 87% improvement over the undoped AgSbTe2 sample. The average ZT value over the temperature range of 323-573 K was 1.09, marking a significant enhancement in thermoelectric performance. This research demonstrates the potential of Mg and Ti codoping as a strategy to improve the thermoelectric properties of AgSbTe2-based materials.

Enhancing performance and thermal stability in GeTe thermoelectric joints with cobalt diffusion barrier

This study investigates the influence on thermoelectric properties of p-type GeTe after depositing cobalt (Co) diffusion barrier, and its ability on inhibiting the interfacial reactions that degrades thermoelectric performance of the joint at medium temperatures. Establishing stable interconnections within the joint is essential for ensuring the reliability of the device. By examining the improved thermoelectric properties of GeTe, the research highlights a discovering that the addition of a Co diffusion barrier significantly elevates figure of merit (zT) values of GeTe. Electron probe microanalysis (EPMA) reveals the diffusion of Co into GeTe and the formation of Co–Te intermetallic compounds. As the device ages, there is a substantial increase in contact resistivity at the GeTe joint. After depositing a Co layer and subjecting it to long-term aging, electrical conductivity improves, and thermal conductivity decreases. This improvement occurs because the Co atoms, which have diffused into the GeTe lattice, occupy Ge vacancy sites. Instead of degrading the zT value, Co deposition leads to a 56 % increase in the zT value for the p-type GeTe joint. This study emphasizes the improvement of the zT value rather than pursuing a high peak zT value for GeTe. These results affirm the role of Co as an effective diffusion barrier, contributing to the stability of the joint interface and the enhancement of the thermoelectric properties of GeTe material, offering a viable route for creating more efficient and durable thermoelectric energy conversion devices.

Physical and chemical properties of low-temperature nanostructured thermoelectric materials on the basis of Bi2Te2.8Se0.2 and Bi0.5Sb1.5Te3

Nanostructured thermoelectric (TE) materials Bi2Te2.8Se0.2 (0.16 wt% CdCl2) n-type and Bi0.5Sb1.5Te3 (2.2 wt% Te and 0.16 wt% TeI4) p-type were fabricated, and complex investigations of these materials were carried out. The thermoelectric materials were obtained by spark plasma sintering (SPS) of nanodispersed powder ground in planetary ball mill. It was found that the average particle sizes in thermoelectric materials after milling for 60 min were about 30 nm. After SPS of the powders, the average crystallite sizes were from 86 to 96 nm. Thermal stability of materials up to 550 K was observed. The relationship between the composition, structure and properties of TE materials was established. The maximum ZT obtained for nanostructured TE materials were ZT = 1.16 at 380 K for Bi2Te2.8Se0.2 and ZT = 1.35 at 370 K for Bi0.5Sb1.5Te3. Increase in ZT for nanostructured thermoelectric materials is due to the decrease of the lattice thermal conductivity.

Physical properties of rutile-TiO2 Nanoparticles and effect on PVA/SiO2 hybrid films synthesized by sol-gel method

We use an ab-initio approach to analyze the structural, electronic band structure, and thermoelectric properties of titanium dioxide (TiO2 in rutile phase), and we then use rutile-TiO2 nanoparticles to determine its effects on sol-gel-produced polyvinyl alcohol/silicon dioxide (PVA/SiO2) hybrid films. The synthesis of hybrid films involved the incorporation of 1 % rutile-TiO2 nanoparticles in the PVA/SiO2 matrix. The thermoelectric properties of the resulting hybrid films were characterized by Seebeck coefficient measurements, as well as electrical and thermal conductivities. The synthesis of PVA/SiO2/Nano-TiO2 films was accomplished with success. The chemical bonds have amply demonstrated that the PVA backbone is connected to the (SiO2-TiO2) network. TGA testing indicates that hybrid films are more resistant to higher temperatures than pure PVA films. SiO2 nanoparticles reveal more effective loading to improve dielectric characteristics compared to TiO2. The best results are obtained in cases of mechanical, thermal and electrical insulation when both nanofillers are integrated into the polymer matrix. The findings show that the thermoelectric performance of PVA/SiO2 hybrid films is improved by the addition of (1 %) rutile-TiO2 nanoparticles in the rutile phase. This study provides insights into the potential applications of rutile-TiO2 nanoparticles in enhancing the thermoelectric properties of hybrid materials and opens up avenues for further research in this area, and contributes to the growing body of knowledge on enhancing the thermoelectric properties of materials by incorporating rutile-TiO2 nanoparticles into hybrid films synthesized by the sol-gel method.

Theoretical analysis of magnetic, optoelectronic, and thermoelectric properties of Cs2CuCrX6 (X = Cl and Br) double perovskites for spintronic and data storage devices

Spintronics is an emerging field that has the potential to replace conventional electronics due to their comparatively high speed, low power consumption, and infinite endurance. The phenomena of ferromagnetism with high spin polarization in double perovskites make them the desired materials for spintronics. In the present work, the structure of Cs2CuCrX6 (X = Cl and Br) and their magnetic and optoelectronic properties were studied by utilizing density functional theory (DFT). For the calculations of exchange-correlation potential, PBE-sol approximation was utilized while for the accurate measurement of electronic band structure and density of states (DOS), we employed mBJ potential. Both materials exhibit cubic structure and are thermodynamically stable as confirmed by volume optimization and negative formation energy respectively. Spin-based energy-volume optimization and values of exchange constants reveal the ferromagnetic nature of materials. It has been observed that 3-d states of Cr are responsible for ferromagnetism and have the major contribution to the net magnetic moment caused by exchange splitting. Furthermore, investigations of band structure and electronic density of states showed that both Cs2CuCrCl6 and Cs2CuCrBr6 were indirect bandgap (Eg) semiconductors with the Eg values of 1.2 eV and 0.33 eV respectively. The optical spectra of materials showed strong absorption in the ultraviolet region. Lastly, the transport and thermoelectric properties (TE) of materials were investigated in the range of temperature 300 K–800 K by using the BoltzTrap code. The transport parameter which included the electrical conductivity (σ/τ) and thermal conductivity (κe/τ) of the materials showed a decreasing trend with temperature whereas the Seebeck coefficient (S) and Power factor (P.F) showed an increasing trend for Cs2CuCrCl6 while decreases in case of Cs2CuCrBr6. Furthermore, a high figure of merit (ZT) with values of 0.75 and 0.64 was obtained for Cs2CuCrCl6 and Cs2CuCrBr6 respectively. The results of this work are encouraging and show the capabilities of the discussed materials in the fields of spintronics, thermoelectric, and optoelectronics.

Enhanced n-Type Thermoelectric Properties and Structure Evolution of Carbonized Metal-Coordination Polydopamine.

Carbonized polydopamine (cPDA) exhibits a nitrogenous graphite-like structure with n-type semiconductor property. However, the low electrical conductivity and Seebeck coefficient of cPDA cannot meet the needs of flexible thermoelectric devices. In this study, a series of metal ions were coordinated with cPDA to enhance n-type thermoelectric properties. At 300 K, all metal-coordination cPDA (metal-cPDA) samples obtain lower thermal conductivity compared to cPDA. Mn-cPDA exhibits the greatest Seebeck coefficient of -25.94 μV K-1, which is almost six times higher than cPDA. Fe-cPDA shows the best electrical conductivity of 2.45 × 105 S m-1. An optimal power factor (PF) value of 11.93 μW m-1 K-2 is achieved in Ca-cPDA with the enhanced electrical conductivity of 9.5 × 104 S m-1 and Seebeck coefficient of -11.24 μV K-1. Using Fourier transform infrared spectroscopy (FTIR), energy dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, X-ray diffraction (XRD), and transmission electron microscopy (TEM), we revealed the structural characterization of metal-cPDA. Our results indictate that the different metal ions (Mn2+, Zn2+, Mg2+, Al3+, Ca2+, and Fe3+) exert varying influences on the growth of graphite-like structure within metal-cPDA, which lead to the evolution of electrical conductivity. We observe that the carrier density and carrier mobility depend on both the degree of graphitization and the metal-ion coordination, which work together on electrical conductivity and Seebeck coefficient. These findings and understanding of the thermoelectric properties of PDA-based materials will help to realize high-performance n-type thermoelectric materials for flexible electronic device applications.

Study on the mechanism of influence of impurity levels introduced by doping high-valence element on the properties of zinc oxide thermoelectric materials

Study on the mechanism of influence of impurity levels introduced by doping high-valence element on the properties of zinc oxide thermoelectric materials

A thermoelectric material suitable for early warning of thermal runaway for energy storage batteries: monolayer GeP3

Abstract Early warning of thermal runaway is one of the most important means to improve the safety performance of energy storage batteries. This paper proposes a new scheme for thermal runaway safety early warning of energy storage batteries by thermoelectric sensing device with the monolayer GeP3 (ML_GeP3) severing as the thermoelectric materials. The results indicate that ML_GeP3 shows great stability in different ambient temperatures and an outstanding sensitivity to ∆T. In addition, experimental studies show that stress variation (transverse stretching, longitudinal stretching, and bending) weakens the thermoelectric properties of thermoelectric materials. In conclusion, ML_GeP3 is a thermoelectric material for use in early warning of thermal runaway for energy storage batteries, and it can significantly improve the safety of energy storage stations.

Enhancing the thermoelectric and mechanical properties of Cu3SbSe4-based materials by defect engineering and covalent bonds reinforcement

Here, a typical microwave hydrothermal-assisted synthesis method is utilized to fabricate Co/Sn co-doped Cu3SbSe4 materials. Experimental results demonstrate that the formation of a nanoscale Co9Se8 phase occurs when the solid solubility of Co is exceeded. This phase effectively enhances phonon scattering at the grain boundary's high-density dislocation region, leading to a significant reduction in lattice thermal conductivity. Simultaneously, the interface between Co9Se8 and Cu3SbSe4 exhibits an energy filtering effect, resulting in an improved Seebeck coefficient. The maximum zT value of 0.62 is achieved in the Cu3Sb0.96Co0.04Se4 sample. To further regulate the carrier concentration, Sn atoms are introduced, leading to peak power factor and zT values of 865.98 μW·m−1·K−2 and 0.72, respectively. The incorporation of Co and Sn doping contributes to the enhancement of mechanical properties by reinforcing covalent bonds. Mechanical property testing of the materials indicates an improvement in mechanical performance upon doping with Co and Sn. This study provides valuable insights into the in-situ introduction of a second phase through element doping, thereby enhancing the comprehensive thermoelectric properties of Cu3SbSe4-based materials. Moreover, it establishes an experimental foundation for subsequent investigations into the materials' mechanical properties.