We report on the quick deposition technique of the highly oriented 6, 13-bis (trisopropylsilylethynyl) pentacene (TIPS-pentacene) crystalline films from the polystylene (PS)/TIPS-pentacene blend solution onto the oxide dielectric films at an elevated temperature for fabricating organic field-effect transistors (FETs). A vertical phase separation between TIPS-pentacene and PS films on high-k metal oxide films leads to the reduction of operating voltage and the interfacial trap density at the gate insulator interface. The polarized optical microscopy image and in-plane X-ray diffraction analysis suggest the pi-stacking of TIPS-pentacene molecules along the direction parallel to the sweeping direction of meniscus coating. The highly oriented TIPS-pentacene crystalline films were obtained at 0.75–2.0 mm s−1 at 70 °C which was much faster than room temperature (0.01 mm s−1). These effects eventually lead to both the improvement of FET properties and device fabrication processes.