Reducing carbon dioxide (CO2) into methane (CH4) through photocatalysis technology can effectively decrease carbon emissions and ease the energy crisis. However, the low photocatalytic efficiency and high electron-hole recombination rates still hinder the large-scale utilization of photocatalysis. Vacancy engineering can reduce electron-hole pair complexation, however, the effects of oxygen (O) and sulfur (S) vacancies on the CO2 reduction properties of bismuth (Bi)-based photocatalysts are unclear. This study prepared different Bi-based photocatalysts, including α-Bi2O3, α-Bi2O3-X, Bi2S3, and Bi2S3-X. The introduction of vacancies was found to greatly increase the specific surface areas, effectively reduce electron-hole recombination, decrease charge transfer resistance, and enhance electron transfer, leading to enhanced CH4 production. Comparatively, Bi2S3-X has substantially demonstrated a superior efficiency in the photocatalytic conversion of CO2 to CH4 compared to Bi2S3, while α-Bi2O3-X exhibited slightly higher than α-Bi2O3. There are more S vacancies in Bi2S3-X (x=0.581) than O vacancies in α-Bi2O3-X (x=0.329), leading to its superior photocatalytic activity, with CO and CH4 production rates of 3.706 μmol·g−1·h−1 and 7.697 μmol·g−1·h−1, respectively. Moreover, the CH4 selectivity of Bi2S3-X reaches 67.50 %, which is 1.67 times that of α-Bi2O3-X. Therefore, Bi2S3-X holds great promise as a photocatalyst for CO2 reduction. This work proves that in Bi-based photocatalyst, S vacancy is more effective than O vacancy in enhancing the selective reduction of CO2 to CH4, offering a pathway for achieving selective CO2 reduction to CH4.
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