With an increasing demand for SiC and GaN high power devices that operate at high temperature, traditional solder materials are reaching their limitations in performance. In addition, there is a strong desire to eliminate high lead containing solders in Si power device packaging for use over conventional temperature range. Low temperature Ag sintering technology is a promising method for high performance lead-free die attachment. In a previous study, a pressureless sintering process and suitable metallization were demonstrated to provide high reliability die attach by using micro-size Ag sintering. The resulting die attach layer had approximately 30% porosity. In this work, a low temperature pressure-assisted fast sintering process was examined. The porosity was decreased from 30% to 15% with application of a low pressure (7.6MPa) during a one minute sintering process. The shear strength for a 3 mm × 3 mm die was 70 MPa and the 8 mm × 8 mm die could not be sheared off due to a 100 kg shear module force limit. Both the Ag and Au metallization (die and substrate) were studied. Furthermore, a new substrate metallization combination was found that allows the use of Au thick film metallized substrates. High temperature (300 °C) storage tests for up to 2000 hours aging were conducted and results are presented.