The unique anisotropic electron-photon and electron-phonon interactions of black phosphorus (BP) set it apart from other isotropic 2D materials. These anisotropic properties can be adjusted by varying the stacking thickness and sequence as well as by applying external pressure and strain. In contrast to multilayer or bulk BP, the effects of pressure on bilayer BP are still not fully elucidated. This study presents experimental evidence that explores the high-pressure response (0-20 GPa) of bilayer BP within the extreme low Raman shift region (5-150 cm-1), aiming at verifying structural phase transitions and stacking sequence variations. Notably, phase transitions were observed at ∼7 GPa for the orthorhombic to rhombohedral transition and at ∼14-16 GPa for a further transition to a simple cubic structure. The effects of pressure on bilayer BP with three distinct stacking sequences (AA, AB, and AC) were analyzed using angular-resolved polarized Raman spectroscopy (ARPR). The recovery of all characteristic Raman modes after the application of pressure substantiates the reversibility of the structural phase transitions in bilayer BP across all three stacking sequences. However, significant alterations in the stacking sequences were observed before and after the application of hydrostatic pressure. Specifically, AA and AC stacking sequences showed a tendency to relax into an optimized interlayer AB stacking structure upon the release of pressure from 20 to 0 GPa. This observed change in the stacking sequences of bilayer BP under pressure is detected for the first time in this work. The pressure-induced modifications in the stacking sequences, and consequently in the anisotropic properties of bilayer BP, highlight its potential as a promising material for pressure- (or strain-) sensitive optoelectronic nanodevices. Additionally, this study offers novel insights into the analysis of anisotropic interlayer interactions in other van der Waals-stacked 2D materials.
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