Preparation Of TiN Films Research Articles

Preparation of TiN films by arc ion plating using dc and pulsed biases

TiN hard coatings were prepared by arc ion plating with both direct current (dc) and pulsed biases. An extensive investigation was undertaken to determine the effects of the substrate temperature on the mechanical properties and the microstructures of films. The results show that the substrate temperature is decreased evidently when a pulsed bias instead of a dc one is employed. At the same time, the microstructures and the properties are also improved. A low-temperature arc ion plating can be realized by using pulsed biases.

Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization

This paper describes the effect of plasma pulse time, power, and composition on the electrical properties of TiN prepared by plasma assisted atomic layer deposition. Longer plasma pulse times yielded films of lower resistivity with enhanced stability in air, but resistivity was observed to exponentially decrease to a certain saturated value. Film resistivity also decreased with increasing RF power along with improving the stability. At a fixed power and exposure time, resistivity of the films decreases with increasing hydrogen percentage until up to 40%, and then remained at that value at higher hydrogen percentages. However, the stability was better with samples prepared with low hydrogen percentage.

Preparation of TiN films at room temperature by inductively coupled plasma assisted chemical vapor deposition

Abstract TiN films were deposited by inductively coupled plasma (ICP) assisted CVD using a gas mixture of TiCl 4 , N 2 , H 2 and Ar at room temperature. For ICP generation, the RF power was applied to a dielectric encapsulated RFI antenna installed inside the deposition chamber. The ICP power was varied from 100 to 400 W. With increasing RF power, the deposition rate, the resistivity, and the Cl concentration were decreased. Although the deposition of TiN was carried out at room temperature, the Cl content in the films was kept as low as approximately 2.5 at.%. TiCl 4 was injected at the hot spot, where the electron temperature was highest in the reactor. As a result, TiCl 4 could be more easily dissociated and TiN films with a low Cl concentration were produced with the deposition rate of 1 μm/h at room temperature. The coupling efficiency increased with increasing ICP power up to 85% at 400 W. The ion density was increased to approximately 6.34×10 11 /cm 3 at 400 W (only Ar).

イオンミキシング蒸着法によるＴｉＮ薄膜の作製とピンホール欠陥評価

イオンミキシング蒸着法によるＴｉＮ薄膜の作製とピンホール欠陥評価

Effects of processing parameters on the microstructure and hardness of the arc ion-plated TiN on a type 304 stainless steel

Substrate bias and specimen-to-target distance are two important parameters that can be manipulated during preparation of TiN films using a cathodic arc ion plating system. Experiments were carried out to deposit TiN on a type 304 stainless steel for different cathode biases ranging from 100 to 300 V and specimen-to-target distances from 150 to 175 mm. Characterization of the microstructure of the TiN-coated steel was done both by transmission and scanning electron microscopy. The results show that the thickness of the TiN coatings increases with decreasing specimen-to-target distance. The TiN coatings exhibit a tapered columnar microstructure and the cone shape of the grains is influenced by the substrate bias. The resistance to deformation of the TiN coatings was evaluated by a Vickers microhardness indenter. It is found that the hardness of the coatings, ranging from 2200±40 to 1880±10, decreases with specimen-to-target distance for different substrate biases ranging from 100 to 300 V.

マグネトロンスパッタ法によるＴｉＮ膜の作製とプラズマ発光分析

マグネトロンスパッタ法によるＴｉＮ膜の作製とプラズマ発光分析

Preparation of TiN Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition

TiN film is used in the ultra large scale integrated circuit (ULSI) process as a diffusion barrier. Conventional TiN films are deposited by reactive sputtering or by rapid thermal nitridation (RTN) of sputtered titanium layers. Our research group has developed a new ECR (electron cyclotron resonance) plasma CVD (chemical vapor deposition) system capable of depositing metal films. By using this system, TiN films were prepared using TiCl4 and N2 as material gases. It is proven that the films have many advantages: low resistivity, low stress, high barrier property, thick deposition on the bottom of the high aspect ratio's hole and low chlorine concentration in comparison with LPCVD (low pressure chemical vapor deposition) TiN film.

Preparation of TiN films by photochemical vapor deposition

The TiN films have been prepared by photochemical vapor deposition using a D2 lamp from a gas mixture of TiCl4 -NH3 (or N2) -H2. The deposition temperature of the TiN films was lowered by 50–100 °C by irradiation with a D2 lamp as compared to that without irradiation. The deposition rate was increased by 35–300% with irradiation.

Development of ion mixing equipment for R&D use and preparation of tin films by N 2 gas assisted ion beam mixing

Abstract We have developed a mass-analyzed ion mixing equipment for surface modification research use. High current ion beams of refractory metals (Cr+: 0.95 mA) were obtained by modifying a conventional Freeman type ion source. We have proposed a N2 gas assisted ion mixing method in which a TiN film can be formed by evaporated Ti molecules and N+2 ion beam in a N2 gas environment. We have verified this proposal by high rate TiN deposition using our newly developed equipment and obtained the following results: (1) crystallinity of TiN film was changed from (111) preferential orientation to (200) orientation by increasing N+2 ion beam radiation, (2) hard TiN films (Vicker's hardness > 2000) were formed by a small current of N+2 ion beam radiation which was about one tenth of conventional dynamic mixing method, (3) hardness of TiN films and their crystallinity were closely related.

プラズマＣＶＤ法によるＴｉＮ膜の合成

プラズマＣＶＤ法によるＴｉＮ膜の合成

TiN films prepared by nitrogen implantation on Ti-coated fused SiO 2

Abstract Properties of TiN films prepared by 8–38 keV N 2 + ion implantations on Ti-coated (90–650 A) fused SiO 2 have been studied for heat mirror coatings. TiN films prepared by annealing Ti film in a nitrogen atmosphere and by sputtering were used as reference samples. The thicknesses and nitrogen contents of the films were measured with the nuclear resonance broadening method and Rutherford backscattering spectrometry. The infrared reflectances of the TiN films prepared by nitrogen implantation were somewhat lower than that of the reference films. The implanted TiN films had as good visible light transmittances as the films prepared by annealing but better than the sputtered films. The advantages of the nitrogen implantation in the preparation of TiN films are excellent adhesion and low preparation temperature.