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https://doi.org/10.1063/1.100771
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Cite Journal: Applied Physics Letters |  Publication Date: Mar 20, 1989 |
 Citations: 10 |
Affiliation: Gifu University
The TiN films have been prepared by photochemical vapor deposition using a D2 lamp from a gas mixture of TiCl4 -NH3 (or N2) -H2. The deposition temperature of the TiN films was lowered by 50–100 °C by irradiation with a D2 lamp as compared to that without irradiation. The deposition rate was increased by 35–300% with irradiation.
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