Precursor-derived SiCN ceramics have been demonstrated to exhibit outstanding piezoresistivity in their amorphous state, making them suitable for application as high-temperature pressure sensors. This study reveals that partially crystallized SiCN ceramics exhibit an even higher piezoresistive coefficient of almost 11,000. From a microscopic perspective, it was previously believed that the excellent piezoresistive performance of precursor-derived ceramics (PDCs) originated from the pressure sensitivity of free carbon in the structure. However, this study has revealed that in partially-crystallized SiCN PDCs, several phases including free carbon, SiC, and Si can also exhibit conductivity. The critical factor that contributes to high piezoresistivity is the proximity between the concentration of conductive phases and the percolation threshold, leading to exceptional pressure sensitivity of SiCN ceramics.
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