Crystallisation kinetics of amorphous Si–C–N ceramics: Dependence on nitrogen partial pressure

Abstract

The crystallisation kinetics of amorphous precursor-derived ceramics of composition Si26C41N33 is investigated as a function of temperature and nitrogen partial pressure using X-ray diffractometry. Isothermal annealing at a pressure of 1 bar leads to simultaneous crystallisation of Si3N4 and SiC, while only crystalline SiC is formed with annealing at a reduced pressure of 1 mbar. Rate constants of crystallisation are determined using the Johnson–Mehl–Avrami–Kolmogorov (JMAK) formalism. For temperatures below 1700°C, crystallisation rates are significantly higher for annealing at 1 mbar compared to 1 bar. For an explanation of the results, a model is proposed, which is based on diffusion-controlled nucleation and growth of crystalline Si3N4 and SiC in an amorphous matrix combined with thermal decomposition of Si3N4 at high temperatures.