Power Devices Research Articles

Proposal of Magnetic-Force-Assisted Polishing Method

To reduce the size of the polisher, especially the polishing head, a novel method for applying the polishing load using magnetic force is proposed. As the fabrication of next-generation power device substrates advances, such as diamond, ultra-precise planarization via chemical mechanical polishing (CMP) becomes crucial for transforming these substrates into functional devices. Achieving CMP necessitates the application of an optimal polishing load to the substrate. Deadweight and air pressure methods are the traditional mechanisms for delivering this load. However, they tend to increase the size and complexity of the polishing head mechanism, hindering its miniaturization. This study proposes leveraging the magnetic force for the application of polishing load. Such an approach not only promises the miniaturization of the polishing head but also paves the way for smaller polishers. We constructed a prototype polisher with a straightforward mechanism and conducted several tests. The removal rate measurements from these tests, when compared with those of the traditional deadweight method in prior research, validated our approach. Additionally, by adjusting the magnet spacing (which adjusts magnetic force) and the rotational speed, we found that the removal rate adheres to Preston’s law even when employing the magnetic force for polishing.

Online Condition Monitoring for GaN Power Devices With Integrated Dynamic On-Resistance Full Profile Scan and Offset Calibration

Online Condition Monitoring for GaN Power Devices With Integrated Dynamic On-Resistance Full Profile Scan and Offset Calibration

Investigation into active‐gate‐driving performance and potential closed‐loop controller implementations for silicon carbide MOSFET modules

AbstractActive gate driving (AGD) is a promising concept for achieving high‐performance power transistor switching. This is particularly crucial for Silicon Carbide (SiC) MOSFETs since their inherently fast switching characteristics give rise to severe overshoots and oscillations which translate into increased levels of electromagnetic interference (EMI) emissions. In this paper, an AGD strategy using a single‐pulse applied during the switching transient is considered for a 1200 V 400 A SiC MOSFET module. The effect of single‐pulse timing, load current, and temperature on the switching performance is analyzed in detail. The radiated EMI reduction benefits are quantified by H‐field and E‐field probes. A conceptual closed‐loop AGD approach is presented and compared to open‐loop operation. For the transistor turn‐off case under full load current of 400 A, experimental results show that it is possible to reduce voltage overshoot by 43.3%, voltage and current oscillations by 69.7% and 52.2% respectively, and EMI by 76.6%, with a trade‐off in the switching energy by a relatively minor increase of 18.2%, compared to the conventional gate driving case. For the turn‐on case, current overshoot was reduced by 32.7%, EMI by 52%, voltage and current oscillations by 54.6% and 52.8%, respectively, with a penalty of 50.9% increase in the switching loss.

A comparative study on the effects of multi-walled carbon nanotubes and graphene nanoplates incorporated for improved thermal conductivity and dielectric properties of polyvinyl chloride

In the present work, the improvement in the thermal conductivity and dielectric behavior in the frequency range of 0.025–5 MHz of polyvinyl chloride (PVC) films incorporated with graphene nanoplates (GNs) and multi-walled carbon nanotubes (CNTs) were investigated. The neat PVC and PVC composites consisting of different filler ratios of 0.25, 0.5, 0.75, and 1 wt% were synthesized using the casting technique. The increase in the concentration of GNs or CNTs up to 0.75 wt% enhanced the dielectric constant, ac conductivity, q-factor, F-factor, thermal conductivity, and total impedance of PVC composites. The values of the investigated parameters are slightly higher for PVC-CNTs composites compared to PVC-GNs composites. A further increase in concentration to 1 wt% reduces these parameters, but still more than PVC consisting of 0.5 wt% fillers. The mechanism of correlated barrier hopping (CBH) could be successfully used to describe the AC electrical conductivity of both PVC-GNs and PVC-CNTs composites thin films. Furthermore, the glass transition and decomposition temperatures were determined and found to be dependent on the filler ratio and type, and the thermal stability was increased after adding the GNs or CNTs nanofillers. These findings have drawn special attention to developing PVC composites that can be used in various industrial fields including flexible and wearable technologies, power devices, supercapacitors, electric vehicle battery systems, and aerospace components.

Low-resistance TiAl3/Au ohmic contact and enhanced performance on AlGaN/GaN HEMT

The advent of an era characterized by intelligent, interconnected systems of AlGaN/GaN High Electron Mobility Transistors (HEMTs) electronic devices is underway. Within this context, the performance of ohmic contacts in HEMTs bears substantive influence on the electrical characteristics of power devices, notably impacting parameters such as on-resistance and output current. Therefore, the improvement of ohmic contacts attributes in AlGaN/GaN HEMT devices has perennially constituted a focal point of considerable industry. Based on the AlGaN/GaN heterostructure, a novel TiAl3/Au ohmic contact has been successfully developed for HEMTs. A low contact resistance of 0.23 Ω·mm (2.33 × 10-6 Ω·cm2) is obtained, which proposes a new interface contact for AlGaN/GaN heterojunction. Transmission electron microscope (TEM) illustrates that the contact mechanism for low resistance is direct contact with two-dimensional electron gas (2DEG) through the substitution of the TiN compound with a smaller area Au dominated penetration. Concurrently, in contrast to TiN, Au exhibits a diminished capacity for Ga dissolution, thereby substantiating its efficacy in preserving the structural integrity of the crystal lattice. In addition, the reduction of Al can impede the diffusion notably, further showing the smooth surface morphology of the electrode with atomic force microscope (AFM) and scanning electron microscopy (SEM) measurements. The ohmic contacts of HEMTs are individually fabricated with Ti/Al/Ni/Au and TiAl3/Au configurations. The HEMTs with TiAl3/Au ohmic contacts demonstrate superior DC characteristics.

Role of graphene surface coating of DBC substrate on sintering motion behavior of copper nanoparticles for silicon carbide power devices

Role of graphene surface coating of DBC substrate on sintering motion behavior of copper nanoparticles for silicon carbide power devices

Observation of Omnidirectional Exchange Bias at All-Antiferromagnetic Polycrystalline Heterointerface.

Due to promising functionalities that may dramatically enhance spintronics performance, antiferromagnets are the subject of intensive research for developing the next-generation active elements to replace ferromagnets. In particular, the recent experimental demonstration of tunneling magnetoresistance and electrical switching using chiral antiferromagnets has sparked expectations for the practical integration of antiferromagnetic materials into device architectures. To further develop the technology to manipulate the magnetic anisotropies in all-antiferromagnetic devices, it is essential to realize exchange bias through the interface between antiferromagnetic multilayers. Here, the first observation on the omnidirectional exchange bias at an all-antiferromagnetic polycrystalline heterointerface is reported. This experiment demonstrates that the interfacial energy causing the exchange bias between the chiral-antiferromagnet Mn3Sn/collinear-antiferromagnet MnN layers is comparable to those found at the conventional ferromagnet/antiferromagnet interface at room temperature. In sharp contrast with previous reports using ferromagnets, the magnetic field control of the unidirectional anisotropy is found to be omnidirectional due to the absence of the shape anisotropy in the antiferromagnetic multilayer. The realization of the omnidirectional exchange bias at the interface between polycrystalline antiferromagnets on amorphous templates, highly compatible with existing Si-based devices, paves the way for developing ultra-low power and ultra-high speed memory devices based on antiferromagnets.

Quantitative shear stress imaging in high throughput in-line Si wafer inspection

Defect inspection methods are basic steps in electronic chip manufacturing and power device production processes in the semiconductor industry. Based on stress induced photoelastic anisotropy, in-line polarized stress imaging (PSI) and quantitative determination of the local shear stress component are possible in single crystalline silicon wafers. Hereafter, such polarization stress images are compared and validated quantitatively with results of finite element simulations based on different 3D elastic models. Uniquely, high resolution at high throughputs is achieved for 300 mm wafer size in the present quantitative stress imaging study.

Thermal Safety Assessment Method for Power Devices in Natural Air-Cooled Converters

The junction temperature of a power device in a natural air-cooled power converter fluctuates randomly due to the variation in airflow rate in ambient environments. Most of the existing thermal analysis methods do not pay attention to the uncertain influence of airflow on the heat-dissipation capacity of such converters, making it difficult to accurately evaluate the thermal safety of these devices. To address this issue, a thermal safety assessment method for power devices in natural air-cooled converters is proposed in this paper. In the proposed method, convective heat resistance samples of converter housing are extracted with an equivalent thermal network model and the historical operation temperature of the converter. Wavelet packet transform is used to analyze the time–frequency domain characteristics of the convective heat resistance, and Monte Carlo simulation is employed to simulate the random influence of the airflow rate on the device junction temperature. The thermal safety of power devices is assessed in the form of over-temperature probability, which is expressed by a two-variable growth function. An experimental platform is designed to validate the effectiveness of the proposed method. The results show that the proposed method can accurately estimate the over-temperature risk of a power device in a natural air-cooled converter under different ambient temperature and current levels, thus effectively improving the thermal reliability of converters.

Experimental AC loss study on REBCO coil assemblies coupled with an iron cylinder

In high-temperature superconducting (HTS) power devices, the presence of iron cores changes the magnetic field profile around the HTS coil windings, potentially affecting their AC loss characteristics. AC loss measurements for HTS coil windings coupled with an iron core using the electrical method can lead to a significant error, owing to the indirect estimation of the iron core loss through using a copper test coil. To investigate the cause of the experimental error and the influence of an iron core on coil AC losses, transport AC losses of REBCO double pancake coil (DPC) assemblies coupled with an iron cylinder were measured. A 40-turn 1DPC and an 80-turn 2DPC assembly wound with 4 mm SuperPower wire were employed in the measurements. To ensure the same iron core loss using the HTS coil assembly and the copper coil, 2D finite element method simulations were conducted iteratively to design the iron core and the copper coil to get the same local magnetic field distributions in the designed iron core for the two cases. The main cause of the error is due to the difference in local magnetic flux densities in the iron core generated by the HTS coil assembly and the copper coil even when the ampere-turns of the coils are identical. We showed that the simulation-guided measurement method can assure accurate AC loss measurement in the HTS coil assemblies coupled with iron cores. Compared with the AC losses in the 1DPC and 2DPC coil assemblies without the iron cylinder, the presence of the iron cylinder significantly increases the coil losses. Frequency dependence is observed in the coil AC losses of the 1DPC and 2DPC assemblies when coupled with the iron cylinder. This is due to the eddy current induced in the iron cylinder generating a magnetic field, which influences the coil AC loss.

Моделирование и анализ распределений температуры и термомеханических напряжений в многокристальном электронном модуле

A mathematical thermomechanical model of a multi-chip electronic module (MEM) containing three silicon dies of high-power transistors fixed with a conductive adhesive on a copper plate placed on a radiator is considered in the form of a system of equations of thermal conductivity and thermoelasticity with specified boundary conditions. As a result of computational studies of the model in the COMSOL Multiphysics software environment, distributions of temperature and thermomechanical stresses in the MEM structural elements were obtained depending on the heating power, the thickness of the adhesive and the size of the model defect in the contact connection of one of the MEM crystals with a copper plate in the form of voids in the adhesive layer. It is shown that voids in the adhesive layer lead to a sharply non-uniform temperature distribution over the crystal area and thermomechanical shear stresses in the contact layer that exceed the maximum permissible values for the adhesive. It has been established that thermomechanical stresses decrease with increasing thickness of the adhesive layer and increase with increasing size of the defect(voids) in this layer. The simulation results are in good agreement with the results of measuring the thermal impedance of power transistor crystals using the modulation method, which indicates the correctness and adequacy of the developed model.

High‐Performance Thermoelectric Fibers from Metal‐Backboned Polymers for Body‐Temperature Wearable Power Devices

AbstractMetal‐backboned polymers (MBPs), with a unique backbone consisting of bonded metal atoms, are promising for optic, electric, magnetic, and thermoelectric fields. However, the application of MBP remains relatively understudied. Here, we develop a shear‐induced orientation method to construct a flexible nickel‐backboned polymer/carbon nanotube (NBP/CNT) thermoelectric composite fiber. It demonstrated a power factor of 719.48 μW ⋅m−1 K−2, which is ca. 3.5 times as high as the bare CNT fiber. Remarkably, with the regulation of carrier mobility and carrier concentration of NBP, the composite fiber further showed simultaneous increases in electrical conductivity and Seebeck coefficient in comparison to the bare CNT fiber. The NBP/CNT fiber can be integrated into fabrics to harvest thermal energy of human body to generate an output voltage of 3.09 mV at a temperature difference of 8 K. This research opens a new avenue for the development of MBPs in power supply.

High-Performance Thermoelectric Fibers from Metal-Backboned Polymers for Body-Temperature Wearable Power Devices.

Metal-backboned polymers (MBPs), with a unique backbone consisting of bonded metal atoms, are promising for optic, electric, magnetic, and thermoelectric fields. However, the application of MBP remains relatively understudied. Here, we develop a shear-induced orientation method to construct a flexible nickel-backboned polymer/carbon nanotube (NBP/CNT) thermoelectric composite fiber. It demonstrated a power factor of 719.48 μW ⋅m-1 K-2, which is ca. 3.5 times as high as the bare CNT fiber. Remarkably, with the regulation of carrier mobility and carrier concentration of NBP, the composite fiber further showed simultaneous increases in electrical conductivity and Seebeck coefficient in comparison to the bare CNT fiber. The NBP/CNT fiber can be integrated into fabrics to harvest thermal energy of human body to generate an output voltage of 3.09 mV at a temperature difference of 8 K. This research opens a new avenue for the development of MBPs in power supply.

Set-Up for Measuring Thermal Parameters of Power Semiconductor Devices

In order to determine the junction temperature of semiconductor devices operating at different power supply and cooling conditions, their thermal parameters are needed. This article describes an original measurement set-up enabling the determination of thermal parameters of power semiconductor devices. In contrast to other set-ups described in the literature, this set-up makes it possible to measure thermal parameters which characterize the efficiency of the removal generated due to a self-heating phenomenon, as well as the parameters characterizing mutual thermal couplings. The presented set-up makes use of an indirect electrical method to determine the junction temperature of diodes, bipolar and unipolar transistors and IGBTs. The methods used to measure the self and transfer transient thermal impedances of these devices and the construction of the set-up are described. The influence of selected factors on the accuracy of the measurements is analyzed. Examples of the measurement results of thermal parameters (self and transfer transient thermal impedances) of power semiconductor devices operating at different cooling conditions are presented. The obtained research results are discussed.

SiC MOSFET Active Gate Drive Circuit Based on Switching Transient Feedback

Due to the influence of parasitic internal parameters and junction capacitance, the silicon carbide (SiC) power devices are frequently marred by significant overshoots in current and voltage, as well as high-frequency oscillations during the switching process. These phenomena can severely compromise the reliability of SiC-based power electronic converters during operation. This study delves into the switching transient of the SiC MOSFET with the goal of establishing a quantitative correlation between the gate driving current and the overshoot in both the drain-source voltage and the drain current. In light of these findings, the innovative active gate drive (AGD) circuit, which features an adjustable gate current, is introduced. Throughout the switching process, the AGD circuit employs a dynamic monitoring and feedback mechanism that is responsive to the gate voltage and rate of change in the drain-source voltage and drain current of the SiC MOSFET. This adjustment enables gate driving current to be actively modified, thereby effectively mitigating the occurrence of overshoots and oscillations. To empirically validate the efficacy of the proposed AGD circuit in curbing voltage and current overshoots and oscillations, a double-pulse experimental setup was meticulously constructed and tested.

Open-circuit fault diagnosis method of inverter in wind turbine yaw system based on GADF image coding

Considering the concealment of inverter open-circuit faults in yaw system of wind turbines, a method for diagnosing open-circuit fault of yaw system inverter is proposed based on Gramian Angular Difference Field (GADF) image coding in this article. Firstly, the current vector phase in the vicinity of relatively high yaw speed is collected as monitoring data. Secondly, considering the insufficient fault feature extraction ability of Convolutional Neural Network (CNN) structures with single dimensional data input during model training, the one-dimensional current vector phase is encoded into two-dimensional image by GADF image coding and an effective CNN fault diagnosis model is obtained with fewer fault samples. Finally, by comparing with actual monitoring data of wind turbine, the effectiveness of yaw system simulation model is verified. The proposed method can achieve identification and localization of open-circuit fault for single and two power devices, which is found to have better anti-noise interference effect and the results are not affected by yaw angle and mechanical torque. It is approved that the proposed method is effective with a simulation on the RT-LAB platform.

A Systematic Investigation into the Optimization of Reactive Power in Distribution Networks Using the Improved Sparrow Search Algorithm–Particle Swarm Optimization Algorithm

With the expansion of the scale of electric power, high-quality electrical energy remains a crucial aspect of power system management and operation. The generation of reactive power is the primary cause of the decline in electrical energy quality. Therefore, optimization of reactive power in the power system becomes particularly important. The primary objective of this article is to create a multi-objective reactive power optimization (MORPO) model for distribution networks. The model aims to minimize reactive power loss, reduce the overall compensation required for reactive power devices, and minimize the total sum of node voltage deviations. To tackle the MORPO problems for distribution networks, the improved sparrow search algorithm–particle swarm optimization (ISSA-PSO) algorithm is proposed. Specifically, two improvements are proposed in this paper. The first is to introduce a chaotic mapping mechanism to enhance the diversity of the population during initialization. The second is to introduce a three-stage differential evolution mechanism to improve the global exploration capability of the algorithm. The proposed algorithm is tested on the IEEE 33-node system and the practical 22-node system. The results indicate a reduction of 32.71% in network losses for the IEEE 33-node system after optimization, and the average voltage of the circuit increases from 0.9485 p.u. to 0.9748 p.u. At the same time, optimization results in a reduction of 44.07% in network losses for the practical 22-node system, and the average voltage of the circuit increases from 0.9838 p.u. to 0.9921 p.u. Therefore, the proposed method exhibits better performance for reducing network losses and enhancing voltage levels.

Effects of gamma-ray irradiation on material and electrical properties of AlN gate dielectric on 4H-SiC

This article investigates the radiation effects on as-deposited and annealed AlN films on 4H-SiC substrates under gamma-rays. The AlN films are prepared using plasma-enhanced-atomic-layer-deposition on an n-type 4H-SiC substrate. The AlN/4H-SiC MIS structure is subjected to gamma-ray irradiation with total doses of 0, 300, and 600 krad(Si). Physical, chemical, and electrical methods were employed to study the variations in surface morphology, charge transport, and interfacial trapping characteristics induced by irradiation. After 300 krad(Si) irradiation, the as-deposited and annealed samples exhibit their highest root mean square values of 0.917 nm and 1.190 nm, respectively, which is attributed to N vacancy defects induced by irradiation. Under irradiation, the flatband voltage (V fb) of the as-deposited sample shifts from 2.24 to 0.78 V, while the annealed sample shifts from 1.18 to 2.16 V. X-ray photoelectron spectrum analysis reveals the decomposition of O-related defects in the as-deposited AlN and the formation of Al(NO x ) y compounds in the annealed sample. Furthermore, the space-charge-limits-conduction (SCLC) in the as-deposited sample is enhanced after radiation, while the barrier height of the annealed sample decreases from 1.12 to 0.84 eV, accompanied by the occurrence of the SCLC. The physical mechanism of the degradation of electrical performance in irradiated devices is the introduction of defects like N vacancies and O-related defects like Al(NO x ) y . These findings provide valuable insights for SiC power devices in space applications.

Study of Energy Flow Mechanisms in High Power Device Converters

The work in this paper is applied to the Zhangbei Power grid. In the flexible direct current (DC) power system, the fault current rises extremely fast when a DC fault occurs. The requirements for the peak of breaking current and fault energy absorption of DC circuit breakers (DCCBs) increase linearly, which significantly increases the cost of the equipment. Therefore, in order to reduce the design difficulty of DCCBs, this paper proposes a strategy to control energy after the fault occurs. Firstly, the energy dimension is added on the basis of the traditional vector control of MMC, which constitutes a three-dimensional energy direct control. Subsequently, the architectures of energy fluctuation control and feedforward control are proposed. The influencing mechanisms for the peak fault current, peak fault voltage and energy dissipation are analyzed. Finally, the simulation of energy fluctuation control and feedforward control is constructed on PSCAD/EMTDC. The simulation results show that the energy fluctuation control is obviously better than the conventional three-dimensional energy control, and the feedforward energy control is further improved on this basis. Compared with the conventional vector control, the peak energy is reduced by 45.43% and the peak current is reduced by 25.39%, which helps to simplify the equipment design and reduce the equipment cost.

Promote the performance of carbon electrode based perovskite solar cells with Cu2GeS3 hole transporting layer

Hole transporting layer (HTL) is indispensable for promoting the power conversion efficiency (PCE) and device stability of perovskite solar cells (PSCs), especially for the carbon electrode based PSCs (C-PSCs). Compared with the large amount of organic HTLs, which are available for metal electrode based PSCs, the inorganic HTLs for C-PSCs are relatively scarce. In this study, we successfully synthesized Cu2GeS3 nanocrystals with spherical shape and well dispersibility, and further explore their potential to function as inorganic HTL for C-PSCs. The Cu2GeS3 HTL can greatly improve the PCE of C-PSCs to 19.0 %, which is enhanced by 36.3 % compared with that (PCE = 13.9 %) of HTL-free C-PSCs. The reported PCE in our study is among the highest PCEs for C-PSCs with inorganic HTL, therefore, our study indicates that Cu2GeS3 nanocrystals are excellent inorganic HTL for C-PSCs.