Power PiN Diode Research Articles

State variable modeling of the power pin diode using an explicit approximation of semiconductor device equations: a novel approach

The concepts of state variable modeling have been applied to obtain a general circuit like model for the power PIN diode. The main aim of this paper is to demonstrate the feasibility of the state variable modeling approach for the PIN diode. From simplified semiconductor device differential equations, the model is built with the corresponding variational equation using an internal approximation. With a special choice of the decomposition functional basis of such internal approximation, it was possible to get efficient and reliable models for the reverse recovery. A simple model of three state variables that has only six parameters, most of which are technological, represented a major improvement in describing circuit/device waveforms during reverse recovery. >

A non-linear charge control model for symmetrical pin diodes

A transient model for semiconductor power devices is derived. The model takes account of end region recombination due to space charge recombination, finite geometry, and enhanced recombination due to ambipolar effects. Recently proposed boundary determined equations are shown to provide the link between external drive current, excess charge stored and majority carrier current at the PI junction boundary. Thus, it is shown that the excess carrier dynamics of a PIN power diode may be described by a first order non-linear differential equation. The model is compared with a long emitter diffusion model and a low level charge control model.

Calculation of the electrical properties of pin power diodes at high current densities by the method of finite elements

In the presented paper the method of finite elements has been used to determine the solution of the transport equation in the middle region of pin diodes. Quasineutrality in thei-region and constant recombination parameters in the end regions have been assumed. Under static conditions the influence of the high injection effects—first separately and then combined—on the carrier distribution at 3000 A/cm2 and on the current voltage characteristic has been studied. The carrier-carrier scattering produces the highest increase of the forward voltage drop of pin diodes. The recombination in the end regions plays a significant role too, while the Auger recombination becomes important mainly at extremly high current densitics.

ChemInform Abstract: SIMPLE METHOD OF FABRICATING AND PASSIVATING HIGH POWER PIN DIODES

Chemischer InformationsdienstVolume 9, Issue 31 Physical Inorganic Chemistry ChemInform Abstract: SIMPLE METHOD OF FABRICATING AND PASSIVATING HIGH POWER PIN DIODES A. ROSEN, A. ROSENSearch for more papers by this authorG. A. SWARTZ, G. A. SWARTZSearch for more papers by this authorF. C. DUIGON, F. C. DUIGONSearch for more papers by this authorA. M. GOMBAR, A. M. GOMBARSearch for more papers by this author A. ROSEN, A. ROSENSearch for more papers by this authorG. A. SWARTZ, G. A. SWARTZSearch for more papers by this authorF. C. DUIGON, F. C. DUIGONSearch for more papers by this authorA. M. GOMBAR, A. M. GOMBARSearch for more papers by this author First published: August 1, 1978 https://doi.org/10.1002/chin.197831014Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat No abstract is available for this article. Volume9, Issue31August 1, 1978 RelatedInformation

Measurement of charge-carrier behaviour in PIN diodes using a laser technique

A measurement system for the determination of charge-carrier densities in operating power devices is described. The system is computer-controlled and uses the free carrier absorption at 3.39 μm wavelength to deduce charge densities as a function of space and time. Measurements of carrier distribution in PIN power diodes have enabled derivation of the ambipolar diffusion length, the carrier lifetime and the carrier mobility.

Simple Method of Fabricating and Passivating High Power Pin Diodes

not Available.

High Power Pin Diode Switching Circuitry With Built-In Short Circuit Protection

In high power diode switching applications where overdrive is necessary, it is difficult to incorporate a short circuit feature in the driving circuitry. In this paper, a high power PIN diode driver with built-in protecting network based on a self-timing mode is described. The self-timing network is monitoring the output voltage and if a short exists, after a reverse-bias switching is completed, it acts to deviate the base current from the output driving device and reduces the load current by a few orders of magnitude. During every forward-bias to reverse-bias transition, the timing network introduces a delay to avoid interference with the normal operation of the circuit. The described driving circuit is suitable in systems where a plurality of such drivers may be used or in testing instrumentation.