A non-linear charge control model for symmetrical pin diodes

Abstract

A transient model for semiconductor power devices is derived. The model takes account of end region recombination due to space charge recombination, finite geometry, and enhanced recombination due to ambipolar effects. Recently proposed boundary determined equations are shown to provide the link between external drive current, excess charge stored and majority carrier current at the PI junction boundary. Thus, it is shown that the excess carrier dynamics of a PIN power diode may be described by a first order non-linear differential equation. The model is compared with a long emitter diffusion model and a low level charge control model.