This year, the IEEE Applied Power Electronics Conference and Exposition (APEC) in Tampa, Florida, again highlighted the latest advances in circuit design, power semiconductors, passives, packaging, and manufacturing. From plenary talks to technical sessions and industry seminars in the exhibit hall, attendees from around the world witnessed developing trends in gallium nitride (GaN) integration, higher-voltage silicon carbide (SiC) devices, gallium arsenide (GaAs) power field-effect transistors (FETs), high-frequency magnetics, advanced packaging, highvoltage and high step-down converters, and design for manufacturability.