Abstract
Ta2O5 films have been deposited on hydrogen-terminated diamond (H-diamond) by a radio-frequency sputter-deposition technique at room temperature. Electronic band structure of Ta2O5/H-diamond heterojunction has been investigated by X-ray photoelectron spectroscopy. Based on the binding energies of core-levels and valence band maximum values, valence band offset has been found to be 1.5±0.2eV for the Ta2O5/H-diamond heterointerface. It shows a type-II band configuration with conduction band offset of 2.4±0.2eV. The large ΔEV value makes the Ta2O5/H-diamond heterojunction probably suitable for the application of high power and high frequency field effect transistors.
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