Field Of Power Electronics Research Articles

КЕРУВАННЯ ДИНАМІКОЮ ІМПУЛЬСНОГО ПЕРЕТВОРЮВАЧА З М’ЯКИМ ПЕРЕМИКАННЯМ, ЩО ПРАЦЮЄ НА ДУГОВЕ НАВАНТАЖЕННЯ

Issues of design and research of energy-efficient and reliable semiconductor DC voltage converters for wide application in power supply devices of arc plasmatrons used in plasma metal cutting installations are considered. An estimated structural dynamic model of a soft-switching DC converter with a closed-loop control system combining the power part and the control system, intended for use as part of the latter as a digital module, was built. A technique is proposed and methods of controlling the converter are found, which provide the specified duration of transient processes, the permissible value of load current pulsations in a quasi-steady mode and the astatism of the output current, which confirms the correctness of the proposed technique. A prototype of a pulse stabilizer with digital control was made. The results of experimental studies of the sample confirm the effectiveness of the developed control device, namely the achievement of the specified duration of transient processes caused by a step change in the load current, close to 10-12 periods of conversion and astatism of the output current. It is shown that the application of a pulse stabilizer, in which a digital control loop is used, has significant advantages compared to analog options and has the advantages of a strategic plan. The use of combined control allows you to significantly reduce the requirements for the overall gain of the main control channel, which greatly facilitates the choice of sequential digital correction. Research results may be of interest to specialists in the field of power electronics, power supply systems of autonomous objects and control systems. References 14, figures 11. Key words: automatic control system, digital controller, external disturbance, plasma, robustness, optimization.

Asymmetric Multilevel DC Link inverter for Reducing THD using a Meta-Heuristic Algorithm

Multilevel inverters are essential for increasing power quality, boosting efficiency, and lowering harmonic distortion in the field of power electronics. This research presents a new method using the Pelican optimization algorithm (POA) to create pulse patterns in multilevel inverters. The work focuses on deploying a 125-level asymmetric multi-level inverter that is powered by solar panels through a Dc-Dc converter in order to address power quality difficulties. In order to get better performance in multilevel inverter systems, the Pelican optimization algorithm is used to create pulse patterns that are modeled after the hunting strategies of pelicans. The Distributed Static Synchronous Compensator, is a leading device that uses power electronic components to control power flow and improve power quality in power grids. It is one of the many specialized power devices available. The primary objective is to enhance reactive power to ensure the stability of voltage within the power system and the aim of this research is to maintain voltage stability. Using the pelican optimization algorithm, the method entails creating and deploying a DSTATCOM based on a 125-level asymmetric multi-level inverter.

Comparative analysis of control strategies impact on power losses in IGBT power modules with a multiphysics‐circuit coupling method

AbstractPower losses in semiconductor devices present a significant impediment to advancing power electronics systems for achieving higher frequencies, improved efficiency, and greater integration. A major challenge lies in directly coupling power losses with various control strategies, considering the variations in manufacturers, packaging, and process structures within the power electronics field. This paper introduces a field‐circuit coupling simulation methodology of the insulated gate bipolar transistor (IGBT) within the Simulink/COMSOL environment, using a conventional three‐phase six‐switch voltage source inverter (VSI) IGBT module as a case study. A composite transfer function interconnects the electrical and thermal aspects, enabling bidirectional coupling between IGBT temperature and losses. This study aims to comprehensively compare the effects of various control strategies, namely, single‐vector, dual‐vector, and three‐vector current model predictive control (CMPC) and space vector pulse width modulation (SVPWM), on the losses and temperature of IGBT power modules. The findings emphasize that losses are significantly influenced by the selection of weighting factor coefficients and power factor settings under the same CMPC control strategy with a fixed switching frequency. Additionally, the selection of control strategies, such as CMPC and SVPWM, substantially impacts power losses in power electronic devices.

Performance evaluation and stability analysis of super-junction IGBTs in high-temperature environments

Abstract This paper aims to evaluate and analyze the performance and stability of super-junction IGBTs (Insulated Gate Bipolar Transistors) in high-temperature environments. The study begins with an overview of the significance of IGBTs in the field of power electronics. It provides a comprehensive discussion of the advantages of super-junction technology and the challenges posed by high temperatures on the performance of IGBTs. Through a series of experiments on various commercial super-junction IGBT models, this research thoroughly assesses the devices’ saturated current, threshold voltage, leakage current, switching time, and switching losses at different temperature points (25°C, 75°C, 125°C, and 175°C). The experimental results demonstrate a significant impact of high temperatures on the performance of IGBTs, particularly in terms of changes in saturated current and threshold voltage. Additionally, the study predicts the lifespan of super-junction IGBTs through High-Temperature Operating Life (HTOL) testing and analyzes the failure modes in high-temperature environments. The results indicate that the expected lifespan of the devices significantly decreases with increasing temperature, with primary failure modes including degradation of the gate oxide layer, an increase in interface traps, and disruption in conductive pathways. The paper also compares experimental results with existing literature, emphasizing the potential and importance of optimized design for super-junction IGBTs in high-temperature environments. The study suggests that improvements in materials, structural design, manufacturing processes, and innovative cooling technologies can further enhance the performance and stability of IGBTs in high-temperature applications. Finally, this research provides new insights into the development of super-junction IGBTs in high-temperature power applications and offers valuable references for professionals in related fields.

Analysis of Parasitic Parameters and Winding Loss Characteristics of High-Frequency Transformer under Different Winding Structures

Abstract With the development of the smart grid and the increasing access of renewable energy to the distribution grid, the traditional AC power grid puts forward an urgent demand for power electronic transformer (PET). The high-frequency transformer (HFT) serves as the core equipment of PET, and its electromagnetic structure and parasitic parameters are the hot spot of study in the field of power electronics. In this paper, the parasitic parameters, winding loss, and leakage magnetic field characteristics of the 20 kHz, 20 kVA HFT are investigated under different winding structures. The results show that the higher the degree of crossover of HFT winding, the lower the leakage magnetic field. The cross winding reduces winding loss and leakage inductance, and also attenuates the impact of frequency variations. The higher the winding height, the lower the leakage inductance. As the insulation thickness increases, the leakage inductance rises. The distribution capacitance varies opposite to the leakage inductance. Based on the analysis of winding loss and parasitic parameters, as well as the consideration of insulation, the final winding layout, the height of winding and the thickness of insulation of the HFT are determined.

SPICE Modelling-Assisted evaluation of dynamic on-resistance characterization in Schottky p-GaN HEMTs amid synchronous buck transient instabilities

This study addresses the critical gap in dynamic on-resistance characterization for GaN HEMTs within the initial unstable state in a non-isolated DC-DC converter, where the output voltage and currents fluctuate and exhibit overshoots or undershoots before stabilizing to their steady-state values, a domain within solar photovoltaic (PV) Maximum Power Point Tracking (MPPT) implementations which is crucial yet insufficiently examined. The authors present a novel multi-pulse test circuit within a synchronous buck converter configuration, complemented by SPICE simulation. This combination allows for the accurate assessment of clamping circuits' performance during transient states, significantly improving the precision of RDS(ON) measurements in unsteady phases. The approach deviates from conventional methods by merging empirical data with simulation insights to validate the efficacy of clamping circuits. The experimental results affirm the methodology's precision, with the highlighted Circuit V showcasing a marginal deviation of 2.32 % from existing benchmarks. This finding substantiates the method's dependability and practicality contributing to the GaN power electronics field. In addition, this research provides a powerful analytical tool for RDS(ON) evaluation, culminating in the design of a test PCB that synergizes with both simulated and empirical evidence, contributing future research in GaN HEMT power converter applications.

Design, analysis, and implementation of a phase‐shift controlled cascaded H‐bridge and anti‐interleaved zeta converter‐based E‐bike battery charging circuitry

AbstractThe rapid extinction of the fossil fuels across the globe has led to the technological advancements in the field of renewable energy sector and the electric vehicular technology. In order to match the paradigm shift in the energy sector and the technology, the battery charging circuitry of electric vehicle (EV) led to the revolutionary changes in the field of power electronics. Accordingly, various conventional topologies of DC‐DC converters were evolved. But there are a few drawbacks such as bulkiness, nonmultiple ports, and less control over the output current ripple. This work proposes a DC‐DC converter which is a hybrid combination of the full‐bridge converter and the zeta converter. The current and the voltage reversals at the high‐frequency transformer (HFT) terminals are made steady by anti‐interleaving the zeta converters on the secondary side. The control pulses of the full‐bridge converter are phase‐shifted to have the tight grip over the output. The modes of operation of the proposed DC‐DC converter has have presented. The calculation of the energy, current, and the voltage for the active and the passive components of the proposed converter has been provided. The proposed system is simulated, and the plots of the voltages and currents of different components of the converter are presented. The converter prototype has been developed to charge a 36 V lithium‐ion battery, and the effect of the phase shift on input current can be seen from the exhaustive results. The comparison of the calculated and simulated currents and voltages has been graphically illustrated. The proposed converter provides a novel converter topology which includes better output control with phase shift and reduced size of memory elements due to high‐frequency switching.

Improving energy storage properties of polyarylene ether nitrile with coral-like CaCu3Ti4O12 nanorods

Film capacitors have attracted widespread attention in the field of power electronics due to their advantages of long service life, high-power density, rapid charging and discharging rates, operational safety, among others. Nonetheless, the persisting challenge regarding the dielectric capacitors’ insufficient energy storage density remains the primary obstacle impeding their advancement. Herein, one-dimensional (1D) coral-like calcium copper titanate (CaCu3Ti4O12) nanorod (CCTONR) is fabricated and interface modified to enhance energy storage properties of polyarylene ether nitrile (PEN). The CCTONR is fabricated through a two-step hydrothermal reaction followed by calcination, and then modified by KH550 and sulphonated PEN sequentially offering SPEN@CCTONR. Due to the 1D nature and the functionalization of SPEN on the surface of CCTONR, the compatibility and the distribution state of SPEN@CCTONR in the PEN matrix are conspicuously improved. Furthermore, a secondary dispersion of SPEN@CCTONR is achieved in the SPEN@CCTONR/PEN composite via uniaxial hot-stretching. As a result, the dielectric permittivity is increased to 17.96, while the breakdown strength remains 199.4 kV/mm for the stretched SPEN@CCTONR/PEN film with filler content of 15 wt%. Correspondingly, an energy storage density of 3.16 J/cm3, with an boosting of 320 % in comparing with that of PEN, is achieved. This stretched SPEN@CCTONR/PEN film with leaped energy storage density would be a promising candidate for future flexible dielectric materials.

Comparison of three-phase inverter modulation techniques: a comprehensive analysis of SPWM and SVPWM

With the increasing utilization of renewable energy sources like solar and wind, three-phase inverters have become indispensable equipment for grid-connected energy systems, sparking significant research interest in the field of power electronics. This paper presents a comprehensive comparison of two primary modulation techniques employed in three-phase inverters: Sinusoidal Pulse Width Modulation (SPWM) control and Space Vector Pulse Width Modulation (SVPWM) control. The aim is to elucidate their respective advantages and disadvantages, particularly focusing on their performance under various control models. Through a systematic analysis of parameters such as total harmonic distortion under different control schemes including the unity power factor control model, the V/F control model, and the modulation ratio, this paper delves into the operational principles, strengths, and weaknesses of SPWM and SVPWM. Additionally, it elucidates the distinctions between these two modulation techniques and their interconnections. Lastly, the paper provides insights into the future development prospects and identifies potential technical challenges in the realm of pulse width modulation techniques.

GaN HEMT for High-performance Applications: A Revolutionary Technology

Background: The upsurge in the field of radio frequency power electronics has led to the involvement of wide bandgap semiconductor materials because of their potential characteristics in achieving high breakdown voltage, output power density, and frequency. III-V group materials of the periodic table have proven to be the best candidates for achieving this goal. Among all the available combinations of group III-V semiconductor materials, gallium nitride (GaN), having a band gap of 3.4eV, has gradually started gaining the confidence to become the next-generation material to fulfill these requirements. Objective: Considering the various advantages provided by GaN, it is widely used in AlGaN/GaN HEMTs (High Electron Mobility Transistors) as their fundamental materials. This work aimed to review the structure, operation, and polarization mechanisms influencing the HEMT device, different types of GaN HEMT, and the various process technologies for developing the device. Methods: Various available methods to obtain an enhancement type GaN HEMT are discussed in the study. It also covers the recent developments and various techniques to improve the performance and device linearity of GaN HEMT. Conclusion: Despite the advantages and continuous improvement exhibited by the GaN HEMT technology, it faces several reliability issues, leading to degradation of device performance. In this study, we review various reliability issues and ways to mitigate them. Moreover, several application domains are also discussed, where GaN HEMTs have proven their capability. It also focuses on reviewing and compiling the various aspects related to the GaN HEMT, thus providing all necessary information.

Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies

AbstractGallium oxide (Ga2O3) is an emerging ultra‐wide bandgap (UWBG) semiconductor material that has gained significant attention in the field of high voltage and high frequency power electronics. Its noteworthy attributes include a large bandgap (Eg) of 4.8 eV, high theoretical critical breakdown field strength (EC) of 8 MV cm−1, and saturation velocity (νs) of 2 × 107 cm s−1, as well as high Baliga figures of merit (BFOM) of 3000. In addition, Ga2O3 has the advantages of large‐size substrates that can be achieved by low‐cost melt‐grown techniques. This review provides a partial overview of pivotal milestones and recent advancements in the Ga2O3 material growth and device performance. It begins with a discussion of the fundamental material properties of Ga2O3, followed by a description of substrate growth and epitaxial techniques for Ga2O3. Subsequently, the contact technologies between Ga2O3 and other materials are fully elucidated. Moreover, this article also culminates with a detailed analysis of Ga2O3‐based high voltage and high frequency power devices. Some challenges and solutions, such as the lack of p‐type doping, low thermal conductivity, and low mobility are also presented and investigated in this review.

Status of h-BN quasi-bulk crystals and high efficiency neutron detectors

III-nitrides have fomented a revolution in the lighting industry and are poised to make a huge impact in the field of power electronics. In the III-nitride family, the crystal growth and use of hexagonal BN (h-BN) as an ultrawide bandgap (UWBG) semiconductor are much less developed. Bulk crystals of h-BN produced by the high-temperature/high-pressure and the metal flux solution methods possess very high crystalline and optical qualities but are impractical to serve as substrates or for device implementation as their sizes are typically in millimeters. The development of crystal growth technologies for producing thick epitaxial films (or quasi-bulk or semi-bulk crystals) in large wafer sizes with high crystalline quality is a prerequisite for utilizing h-BN as an UWBG electronic material. Compared to traditional III-nitrides, BN has another unique application as solid-state neutron detectors, which however, also require the development of quasi-bulk crystals to provide high detection efficiencies because the theoretical efficiency (ηi) relates to the detector thickness (d) by ηi=1−e−dλ, where λ denotes the thermal neutron absorption length which is 47 μm (237 μm) for 10B-enriched (natural) h-BN. We provide an overview and recent progress toward the development of h-BN quasi-bulk crystals via hydride vapor phase epitaxy (HVPE) growth and the attainment of thermal neutron detectors based on 100 μm thick 10B-enriched h-BN with a record efficiency of 60%. The thermal neutron detection efficiency was shown to enhance at elevated temperatures. Benchmarking the crystalline and optical qualities of h-BN quasi-bulk crystals with the state-of-the-art mm-sized bulk crystal flakes and 0.5 μm thick epitaxial films identified that reducing the density of native defects such as vacancies remains the most critical task for h-BN quasi-bulk crystal growth by HVPE.

Research on the current applications of IGBTs in power electronics

Based on the large demand for IGBT components in the 21st century, it is necessary to study the strengths and weaknesses of the IGBT industry. And as one of the irreplaceable and important industrial components in the future, it is necessary to find out the direction of the IGBT industrys future enhancement and the parts that need to be enhanced for its development. Therefore, this study focuses on the future demand and development of IGBT in the economic industry, and determines the future development of IGBT components according to the demand. IGBT has a wide range of applications in the field of power electronics. As a widely used electronic component, this paper compares the advantages and disadvantages of IGBT originals to other originals to get the advantages of IGBT and, at the same time, analyzes the problems encountered by the IGBT industry in modern development and how to optimize the development of the IGBT industry in the future. This paper will be mainly used in the IGBT industry using a comparative analysis approach to the relevant research and, finally, will summarize the advantages of the IGBT that cannot be replaced and put forward the changes that are required by the IGBT industry now as well as the development of the industry in the future.

Magneto-Optic and thermoelectric response of doped SrZrO3 for energy storage applications

Using first-principles calculations, we have investigated the electronic, optical, magnetic and thermoelectric properties of the pristine and doped SrZrO3 (SZO) with Mn, Co, and Fe atoms at Sr-site. Our calculations shows that the Mn. Co, and Fe atoms at Sr-site can be easily incorporated in SZO due to their lower formation energies. The pristine SZO exhibit a non-magnetic semiconductor nature with a band gap of 4.06 eV. Interestingly, the dopants Mn, Co, and Fe atoms alters the semiconductor nature of SZO to magnetic one with a band gap values of 1.38(↑)/1.74(↓), 2.98(↑)/0.0(↓), and 0.0(↑)/1.87(↓) for Mn-, Co–, and Fe-doped SZO. This 100 % spin-polarization near the fermi-level, confirming the half-metallic nature of the X-SZO (X = Mn, Co, Fe). Importantly, the magnetic anisotropy energy (MAE) of 1.27 meV, 1.45 meV, and 0.67 meV is estimated for Mn-, Co–, and Fe-doped SZO, respectively. Thus, the realization of MAE could pave a way to utilize Mn-, Co–, and Fe-doped SZO for applications in magnetic semiconductor devices. Optical absorption of Mn-SZO spectra exhibits blueshift upon introducing impurities and materials exhibits good absorption in the visible region. A drop in reflectivity and rise in conductivity in the high energy Ultraviolet region make these materials as potential candidate for fabrication of devices in the field of photodetectors, optoelectronic, power electronics, solar cells, photonic and photovoltaics. The ZT value is recorded 0.35, 0.45, 1.12 and 0.55 for pristine, Mn-SrZrO3, Co-SZO and Fe-SZO respectively at different temperature values. It would be ideal to perform more experimental research on the effective application of these systems in the domains of magnetic semiconductor devices and photo-electronics.

Switched-Capacitor Enhanced Circuits for Voltage-Boosting DC-DC Converters: Principles and Applications

With rapid advancement of DC-DC converter, the non-isolated dc-dc converters has caught much attention from academia and industry, owing to its advantages including low cost and compacted structure. Especially, the non-isolated dc-dc converters have taken the dominant position in topology design of power source. This paper introduces the concept of output section evolution in non-isolated dc-dc converters, with the aim of integrating high ratio voltage boosting capacity. To achieve this, a series of novel output enhanced circuits are proposed and discussed in detail. These circuits are structured using capacitors and diodes, making them applicable to various positive output dc-dc converters. Notably, the derived topologies in this paper eliminate the need for additional power switches and transformers. The effectiveness of the proposed approach is demonstrated through application cases based on both the classical boost converter and the developed voltage-lift SEPIC converters. These cases showcase the practical application and benefits of the proposed method. By following the topology construction method outlined in the paper, engineers can gain valuable insights and guidelines for designing circuits in the field of power electronics. Theoretical analysis has been verified in experimental prototype and the provided resources also serve as an educational tool for those studying power electronics engineering.

Comprehensive Analysis of Vienna Rectifiers for Renewable Resources

The issue of energy has emerged as a significant subject of concern in contemporary discourse. The significance of the advancement of novel energy sources is progressively growing. Relevant strategies should aid in the advancement of power electronics. The rectifier is a commonly used electronic component that finds application in many circuits involving electronic equipment. Its primary function is to convert alternating current into direct current, which is then supplied to the load. The Vienna rectifier is a widely used rectifier that has garnered significant attention and scrutiny from professionals in the field of power electronics on a global scale. This article begins by illustrating the use of power electronics technology, specifically focusing on the charging pile circuit. It proceeds to discuss the classification and current research status of rectifiers. Subsequently, the article provides an overview of the circuit layout and operational principles of the Vienna rectifier circuit. This section provides an overview of the approaches and features used to optimize the operating performance of Vienna rectifiers in four key areas: current control, voltage control, neutral point voltage balance management, and harmonic stability control. This research will ultimately provide a forecast about the future development trend of Vienna rectifiers, together with a comprehensive overview of all improvement attempts.

Recent Advancements and Application Of Z-Source Inverters

With the imminent energy crisis, mankind's demand for clean energy is increasing. Electricity, as the foundation of today's social development, its industry is developing at a high speed, and there is an urgent need for more efficient, stable and flexible power conversion solutions in the field of power electronics. However, traditional power electronics topologies encounter limitations, especially when confronted with wide-ranging input voltage fluctuations, posing challenges for meeting practical requirements. The Z-source inverter addresses issues inherent in conventional power electronic topologies. The Z-source inverter, a novel power electronic converter, has garnered significant attention in the power electronics domain due to its promising developmental prospects. The paper initially presents advancements in Z-source inverter topology, followed by a summary of pertinent technologies, including modulation techniques and closed-loop control strategies. Furthermore, it delves into a comprehensive examination of Z-source inverters, offering valuable references and insights to further enhance their performance and reliability. Finally, the challenges faced by Z-source inverters are discussed and possible directions of development are proposed.

BOEING 787 Model Daha Elektrikli Uçak Sistem Yenilikleri ve Araştırılan Sorunları

In recent years, MEA technology has brought about developments in the field of power electronics, fault-tolerant architecture, electro-hydrostatic actuators, flight control systems, high-density electric motors, power generation and conversion systems. Non-propulsive systems in traditional aircraft systems, ıt is powered by a combination of different secondary power sources such as hydraulic, pneumatic, mechanical and electrical while the more electric aircraft (MEA) concept ensures the use of optimum electrical power for all non-propellant systems. 
 The goal of future aircraft technology is to replace the majority of non-electrical power-using systems, such as environmental control and engine starting, with electrical systems to improve various aircraft characteristics such as efficiency, emissions, reliability and maintenance costs. B787 series aircraft, the first civil aircraft with more electric aircraft features of modern times, ıt features composite fuselage and wing profiles, fly-by-wire flight controls, advanced cockpit and General Electric or Rolls-Royce engines. Different from previous designs, Boeing has minimized the use of air from the engines in the B787 technology and makes extensive use of electrically powered systems instead of traditional pneumatically powered systems. B787 new generation passenger aircraft, ıt is anticipated that significant improvements such as aircraft weight, fuel consumption, total life cycle costs, carbon neutrality, ease of maintenance and aircraft reliability will reduce the effects of adverse environmental conditions.
 In this study, the system innovations of the B787 aircraft model, which is a more electric aircraft concept and introduces different testing and working methods throughout the design process, and the problems caused by the new systems were investigated.

Empowering Higher Education through a Micro-Credential Program in Power Electronics Course

In line with the global and national shifts towards enhancing educational accessibility, flexibility, and quality, Malaysia has embarked on a transformative journey with the implementation of the Malaysian Education Blueprint 2015–2025 (Higher Education) and E-Learning Guidelines for Malaysian Higher Education Institutes. This strategic initiative acknowledges the pivotal role of e-learning in shaping the future of education by enabling greater access to knowledge and skills. The COVID-19 pandemic has further accelerated the growth of e-learning, emphasizing the need for innovative educational approaches. This paper presents a micro-credential program in the field of power electronics, aligned with Malaysia's commitment to advancing higher education through technology-driven solutions. The curriculum, which is tailored to meet the needs of a wide range of learners, covers all the fundamentals of power electronics and leaves participants with specific knowledge and abilities. This micro-credential program is designed to empower professionals and students, supporting their career objectives in the dynamic power electronics industry, by emphasizing accessibility, flexibility, and high-quality learning experiences.

Comparison of High Voltage Device Based on Si and SiC

High voltage devices play a crucial role in various power electronic applications. Silicon (Si) has been the dominant material for such devices, but silicon carbide (SiC) is emerging as a promising alternative due to its superior properties. The objective of this study is to comprehensively compare high voltage devices based on Si and SiC. This study will focus on their different characteristics and performances in individual environments. Based on the analysis, we have observed that SiC devices exhibit superior performance in several key aspects. Notably, SiC devices demonstrate lower power losses attributed to reduced line and switching losses. These findings underline the immense potential of SiC as the preferred material for high voltage applications. The research outcomes offer valuable insights into the performance disparities between silicon-based and SiC-based high voltage devices. This knowledge is crucial for guiding future advancements in the field of power electronics, enabling the development of more efficient and reliable high voltage systems. By embracing SiC devices, one can enhance power transmission, improve energy efficiency, and advance sustainable energy solutions.