Comparison of High Voltage Device Based on Si and SiC

Abstract

High voltage devices play a crucial role in various power electronic applications. Silicon (Si) has been the dominant material for such devices, but silicon carbide (SiC) is emerging as a promising alternative due to its superior properties. The objective of this study is to comprehensively compare high voltage devices based on Si and SiC. This study will focus on their different characteristics and performances in individual environments. Based on the analysis, we have observed that SiC devices exhibit superior performance in several key aspects. Notably, SiC devices demonstrate lower power losses attributed to reduced line and switching losses. These findings underline the immense potential of SiC as the preferred material for high voltage applications. The research outcomes offer valuable insights into the performance disparities between silicon-based and SiC-based high voltage devices. This knowledge is crucial for guiding future advancements in the field of power electronics, enabling the development of more efficient and reliable high voltage systems. By embracing SiC devices, one can enhance power transmission, improve energy efficiency, and advance sustainable energy solutions.