Power Applications Research Articles

Performance assessment of InGaAs–SOI–FinFET for enhancing switching capability using high-k dielectric

In this work, a high-k In0.53Ga0.47As silicon-on-insulator FinFET (InGaAs–SOI–FinFET) is presented for high-switching and ultra-low power applications at 7 nm gate length. Indium Gallium Arsenide (InGaAs) is a compound semiconductor that has gained attention in the field of semiconductor devices, including FinFETs. The incorporation of InGaAs in proposed FinFETs introduces several advantages, making it an attractive material for certain applications. InGaAs–SOI–FinFET performance has been observed and found high electron mobility, improved On-Current performance (ION), drain current (IDS), transconductance (gm), energy bands, lower subthreshold swing (SS), electric field, surface potential, and better short-channel behaviour. All the results of InGaAs–SOI–FinFET have been simultaneously compared with SOI-FinFET and conventional FinFET (C-FinFET). Incorporating InGaAs in the channel with high-k gate material enhances the drain current by ⁓75% and ⁓77% in the proposed device compared to the other two counterparts. Owing to the higher drain current in the InGaAs–SOI–FinFET, other parameters have also been improved, which leads to higher performance applications.

Study on multifunctional magnesium copper zinc spinel ferrite nanoparticles prepared by hydrothermal route; Physical, electrical, and anti-microbial investigation

Polycrystalline spinel ferrite nanoparticles of Mg0.70-XCuXZn0.30Fe2O4(X=0.0,0.15,0.30,0.45,0.60) were prepared by hydrothermal approach. The structural modification by X-ray diffraction of Mg-Zn spinel ferrite with Cu2+ substitution was recorded through crystallite size (11–14 nm), Lattice dimension (8.34–8.38 A°), strain (7×10−3-9×10−3) and dislocation density (4×1015-7×1015) respectively. The formation of spinel structure (Fe-O) was identified by FTIR with a vibration band around 400–600 cm−1. Also, the Rietveld refined XRD pattern confirmed the presence of a cubical spinel structure. The electron microscopic (SEM) analysis revealed sphere-cubical agglomerates of the prepared material. TEM analysis revealed that the particles were inside the nanoscale range, with an average particle size of 15.97 nm determined using a lognormal histogram. The existence of the expected elements is confirmed by EDS spectra. From BET data, surface parameters including surface area (39.938–92.643 m2/gm), volume (2.355 × 10−1 to 2.52 × 10−1 gm/cm3), pore radius (5.0831–12.650 nm), and pore size distribution were determined. The magnetic parameters Ms (20–34 emu/g), Hc (30–39 Oe), and Mr (1.3–2.8 emu/g) obtained by VSM measurements indicate the single domain, pseudo single domain and multi-domain nature of as prepared nanoparticles and lower dielectric parameters at high frequency obtain from dielectric spectroscopy indicate the suitability of the material for switching devices, power application energy storage, and high-frequency applications. The antibacterial efficacy of the synthesized nanoparticles (NPs) was evaluated against different harmful bacteria and demonstrated the desired zone of inhibition (ZOI).

The frequency analytical method for regional power systems considering the emergency frequency control

With the continuous construction of high-voltage direct-current (HVDC) transmission projects, higher requirements are placed on the frequency security of the regional power systems. In order to ensure the frequency security of regional power systems, this paper proposes a transient frequency analytical method considering the emergency frequency control (EFC). Firstly, the aggregated system frequency response (SFR) model is constructed by reducing the order of the generator governor equation, the EFC equation, and the load model equation. Then, based on the aggregation model, the analytical solution of the transient frequency nadir of the regional power system is derived. The model can quickly and accurately calculate the transient frequency nadir of the regional power system considering EFC after the HVDC block fault. Finally, based on an actual regional power system model, the accuracy and applicability of the proposed method under HVDC block fault are verified.

18 A/1020 V p-GaN-gated HEMTs with Isosceles Trapezoidal-Shaped Multi-Finger Structure

In this article, we investigate the effects of gate and drain field plates and isosceles trapezoidal-shaped multi-finger structures on the characteristics of high current p-GaN-gated high-electron-mobility transistors (HEMTs). By optimizing the lengths of gate and drain field plates, the p-GaN-gated HEMTs with 200 μm have a breakdown voltage of 1893 V, a specific on-resistance of 7.0 mΩ-cm2, and a Baliga figure of merit (BFOM) value of 511 MW cm−2. Using the optimized isosceles trapezoidal-shaped multi-finger metallization on the source and drain, the p-GaN-gated HEMT with a 100 mm gate width can reach a current of 2.3 A. Combining all the optimum parameters of field plates and isosceles trapezoidal-shaped multi-finger, the fabricated 600 mm p-GaN-gated HEMT exhibits an output current of 18 A, an on-resistance of 0.7 Ω, and a breakdown voltage of 1020 V. Furthermore, the device also exhibits good thermal stability at high temperatures. These results demonstrate the potential and advantages of p-GaN-gated HEMT for power applications.

Performance evaluation and stability analysis of super-junction IGBTs in high-temperature environments

Abstract This paper aims to evaluate and analyze the performance and stability of super-junction IGBTs (Insulated Gate Bipolar Transistors) in high-temperature environments. The study begins with an overview of the significance of IGBTs in the field of power electronics. It provides a comprehensive discussion of the advantages of super-junction technology and the challenges posed by high temperatures on the performance of IGBTs. Through a series of experiments on various commercial super-junction IGBT models, this research thoroughly assesses the devices’ saturated current, threshold voltage, leakage current, switching time, and switching losses at different temperature points (25°C, 75°C, 125°C, and 175°C). The experimental results demonstrate a significant impact of high temperatures on the performance of IGBTs, particularly in terms of changes in saturated current and threshold voltage. Additionally, the study predicts the lifespan of super-junction IGBTs through High-Temperature Operating Life (HTOL) testing and analyzes the failure modes in high-temperature environments. The results indicate that the expected lifespan of the devices significantly decreases with increasing temperature, with primary failure modes including degradation of the gate oxide layer, an increase in interface traps, and disruption in conductive pathways. The paper also compares experimental results with existing literature, emphasizing the potential and importance of optimized design for super-junction IGBTs in high-temperature environments. The study suggests that improvements in materials, structural design, manufacturing processes, and innovative cooling technologies can further enhance the performance and stability of IGBTs in high-temperature applications. Finally, this research provides new insights into the development of super-junction IGBTs in high-temperature power applications and offers valuable references for professionals in related fields.

Controlling the temperature build-up in electrode-sealed coin-shaped batteries via designing central heat dissipator

Nowadays, the ever-increasing demand for the computational power in the calculators, watches and LED lights require higher consumption rate from their portable energy source, which is typically coin-shaped batteries. The required power generates and accumulates a large amount of heat, which is a critical safety concern due to flammability of the included organic electrolytes. When heat dissipation is minimal from the electrode surface, the packaging boundary remains the sole heat transfer medium. In such case, although the center carries a minimal real estate compared to the rest of the electrode surface, the heat gets trapped, due to having the lowest reach to the heat-dissipating boundaries. For this purpose, a central heat sink component is anticipated for the coin-shaped batteries and the temperature profile across the cell is analytically derived. Subsequently, the role of the sink thermal conductivity and its scale as well as the thermal conduction of the boundary on the formation of steady state temperature profile has been analyzed. More specifically, the location of the maximum temperature rmax and its value Tmax is obtained and verified versus the extreme values of the thermal conductivities, the areal ratio of the heat sink, and the current density. The obtained results could be useful for the cost-effective design of the packaging materials (i.e. sustainable plastics and bio-degradable) with limited heat dissipation for the rechargeable batteries, particularly during the high power applications, in the presence of highly flammable electrolytes.

A High-Gain DC-DC Converter for Fuel-Cell for Submarines

In this research paper, we present a novel high-gain DC-DC converter designed for fuel cell applications in submarines. Fuel cells offer significant advantages for submarine power systems due to their high efficiency, silent operation, and capability to function without atmospheric oxygen. The proposed converter enhances the low voltage output of fuel cells to meet the higher power demands of submarine systems. This paper details the structure of the converter, operational modes, and simulation results. The converter demonstrates substantial improvements in voltage gain and efficiency, making it a suitable solution for advanced submarine power applications.

Design and Implementation of Silicon-Doped Ferrogate Stacking JL-VTFET in MIC Sepic Convertor

This paper introduces a Ferro technique in the junctionless vertical tunnel field effect transistor in which the ferroelectric property in the [Formula: see text] is developed with the help of Silicon doping in it. The incorporation of the ferroelectric oxide stacking with [Formula: see text] results in low sub-threshold slope and high trans-conductance which is highly suitable for sensing of small voltage and converting it into strong drain current. The introduction of the high k-dielectric material with [Formula: see text] also leads to small lattice mismatch so that the losses can be reduced. The device shows ON current in the order of (2.62 × 10[Formula: see text]A/[Formula: see text]m) and the ratio of the ON to OFF drain current is noted as (of 2.031 × 10[Formula: see text]). Moreover, the device exhibits sub-threshold slope 35mV/dec and the ratio of trans-conductance to drain current (gm/[Formula: see text]) in the range of 150–350 V[Formula: see text]. Then the design structure is used to develop the circuit of multiple input converters (MIC) because the device shows high conversion rate (trans-conductance). For the converter, State-space analysis is used for the modeling of converter which was further followed with the design of converters’ energy storing apparatus with its voltage gain formulation. Interaction analysis is used to create a decentralized controller. The controllers’ robustness is tested using parametric uncertainty. A 175-watt experimental archetype with 36 volt and 24-volt sources is developed in the lab. The digital controller was implemented using the processor. The efficacy of controllers for regulating sources and loads has been verified. The controller’s strength is ensured by the satisfactory correlation between simulation and investigational results. For the result outcome one can validate Silicon Doped Ferro Gate Stacking JL-VTFET results for low power applications.

Energy efficient Wallace multiplier using symmetric stacking counter circuit

Multipliers show a dynamic part in numerous uses such as digital signal processing, filters and so on. Hence, the performance of the multiplier circuit has also to be improved more for better results. The circuit of the multiplier should be more compact and efficient to achieve the best outcome. Symmetric stacking counter circuit is designed using reversible logic gates and it reduces the power consumption. Various symmetric stacked counters are designed and used to implement the Wallace tree multiplier. The proposed multiplier is consumes 0.798mw of power and PDP of 2.47. The designed multiplier is power efficient as compared with existing methods with slight increase in delay. The proposed multiplier is used in low power application like modulators and demodulators.

The challenges and breakthroughs in the development of diagnostic monoclonal antibodies

AbstractOver the past century, the field of antibody discovery has undergone significant evolution, excluding the current exploration stage of artificial intelligence‐based antibody generation and the often overlooked non‐animal sourced antibody discovery, which typically requires mature in vitro affinity and the selection of high‐quality antigen formulations. This journey has traversed various stages, from methods involving serum‐based antibody acquisition, the isolation of B cells capable of perpetual antibody production through hybridoma technology, to the in‐depth exploration of genetic material using the phage display system, and the current stage involving diverse single B cell screening techniques. Additionally, the emergence of machine learning has brought impressive scientific and technological breakthroughs across research domains, proving to be a powerful application in the field of antibody discovery. However, each technique comes with its limitations, such as variability and control challenges in serum‐based acquisition, lengthy and difficult hybridoma‐derived antibody development, potential limitations in sequence and epitope diversity due to immunization biases in phage display techniques, and costly single B cell screening. Protein mass spectrometry sequencing, with shorter acquisition time and lower costs, is seen as a shortcut by diagnostic companies, impacting traditional antibody development. In diagnostic antibody development, methodological differences in downstream assays and the impact of constant regions outside the Fv core are often neglected. This paper deeply analyzes challenges, proposing innovative strategies for the next generation of diagnostic antibody development. Aimed at moving closer to the gold standard of antibody discovery, these strategies enhance the competitiveness of diagnostic reagent products.

A triple‐LC‐based DC/DC converter with wide input voltage gain in both under‐resonance and over‐resonance frequency regions

AbstractIn recent years, wide voltage range DC/DC converters have been widely used in telecom power, solar generation and electric vehicle charger applications. Based on this, a new multi‐resonant converter with wide input voltage is proposed here. Compared with the traditional LLC converter, the proposed converter can maintain the output voltage within a narrow frequency regulation range in both under‐resonance and over‐resonance areas. Thus, a wide voltage range can be realized without additional switch components or complex control strategies. The topology and the corresponding working principle of the proposed converter are introduced. In addition, the equivalent model by considering the fundamental wave is established and the influence of the resonance parameters on the voltage gain characteristic is analysed in detail. With these considerations, the resonance parameters are designed. Finally, a 500 W experiment platform is established to verify the effectiveness and feasibility of the proposed converter.

Sea Power as National Defence: Has Indonesia implemented it?

The objective is to analyze the role of maritime defense in Indonesia's national strength and alliances, examining modern naval capabilities, regulations, investment, and Mahan's Sea Power principles for strategic readiness and economic integration in the 21st century. The research employs a descriptive qualitative method, focusing on in-depth understanding and data interpretation. Triangulation is used for data validity, and analysis follows an inductive approach without generalization. Additionally, it utilizes sea power theory and defense diplomacy concepts to explore Indonesia's maritime strength and diplomatic efforts. Sea Power is an important issue for all countries in the world. Several maritime conflicts have gotten out of control due to a lack of input regarding naval defence strategies. Such as conflicts over the dynamics of China's militarisation in the South China Sea (LCS) region or the Russia-Ukraine Black Sea conflict. Considering Indonesia as a maritime country that is required to immediately provide national defence in the future, to prevent future conflicts, following the application of sea power, Indonesia is considered to have achieved the criteria in this matter. Therefore, through the application of Alferd Thayer Mahan's "Sea Power" theory, researchers try to adapt this theory to several Indonesian efforts in the 21st Century with an interest in highlighting the Indonesian Navy's efforts and strategies in achieving contemporary sea power in the 21st century. With a focus on research into Indonesia's national interests in achieving sea power and Indonesian naval strategy. With the results, it is hoped that readers will be able to realize the importance of the sea and find out to what extent Indonesia has implemented Mahan's theory by examining the two superpower countries, the US and China, which are countries that have applied this theory to their navies

Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility

AbstractUltrawide bandgap (UWBG) semiconductors offer new possibilities to develop power electronics. High voltage operation for the off‐state as well as high temperature stability of the devices in on‐state are required. More than AlGaN/GaN heterostructures, AlGaN/AlGaN heterostructures are promising candidates to meet these criteria. Furthermore, the possibility to choose the Al molar fraction of AlGaN paves the way to more tunable heterostructures. In this study, the electronic transport properties of AlGaN channel heterostructures grown on silicon substrates with various aluminum contents, focusing on the temperature dependence of the electron mobility, is investigated. Experimental results from Hall effect measurements are confronted with carrier scattering models and deep level transient spectroscopy analysis to quantify limiting effects. These results demonstrated the significant potential of Al‐rich AlGaN channel heterostructures grown on silicon substrates for high power and high temperature applications.

Radical Polymer-based Positive Electrodes for Dual-Ion Batteries: Enhancing Performance with γ-Butyrolactone-based Electrolytes.

Dual-ion batteries (DIBs) represent a promising alternative for lithium ion batteries (LIBs) for various niche applications. DIBs with polymer-based active materials, here poly(2,2,6,6-tetramethylpiperidinyl-N-oxyl methacrylate) (PTMA), are of particular interest for high power applications, though they require appropriate electrolyte formulations. As the anion mobility plays a crucial role in transport kinetics, Li salts are varied using the well-dissociating solvent γ-butyrolactone (GBL). Lithium difluoro(oxalate)borate (LiDFOB) and lithium bis(oxalate)borate (LiBOB) improve cycle life in PTMA||Li metal cells compared to other Li salts and a LiPF6- and carbonate-based reference electrolyte, even at specific currents of 1.0 A g-1 (≈10C), whereas LiDFOB reveals a superior rate performance, i. e., ≈90 % capacity even at 5.0 A g-1 (≈50C). This is attributed to faster charge-transfer/mass transport, enhanced pseudo-capacitive contributions during the de-/insertion of the anions into the PTMA electrode and to lower overpotentials at the Li metal electrode.

Balancing hope and hype on hydrogen’s role in the Philippine energy transition

Hydrogen (H2) presents a unique opportunity for the Philippines’ energy landscape. Using hydrogen as an ‘energy vector’ for industrial, power, and transportation applications represents a promising and sustainable solution in its ongoing efforts to address climate change and transition towards a cleaner energy future. However, unlocking this potential requires first addressing regulatory and policy gaps. This challenge has many different facets, such as the need for regulations to support the hydrogen infrastructure development, the establishment of clear standards for safe hydrogen production, storage and handling, streamlining of permit and license applications, monitoring of solar or wind power plants coupled with electrolysis process, provision of more substantial support for research and innovation, and promotion of hydrogen-based products.This policy brief describes the current landscape and identifies the regulatory and policy gaps that policymakers must fill while highlighting the Philippines' potential for hydrogen energy and energy storage in the short and long run. It is crucial to have a complete policy framework that addresses regulatory clarity, financial incentives for infrastructure development, technical capacity, support for R&D, and strategic export planning. The Philippines can utilize its renewable resources, improve energy security, and cut emissions by filling these gaps.

Smartphone-based sensing and in vivo and in vitro imaging of Mn(VII) based on nitrogen-doped red fluorescent carbon dots.

Smartphone-assisted visual assay platform provides novel insight for the real-time in-field quantitation of intended analytes in resource-insufficient areas. Herein, nitrogen-doped red fluorescent (FL) carbon dots (R-CDs) were developed for the timely on-site quantitation of Mn(VII) using the smartphone-assisted assay platform. R-CDs, possessing a desirable bright red FL at 616 nm under a 470 nm excitation, were fabricated through hydrothermal treatment adopting passion fruit and neutral red as precursors. Interestingly, bright red FL at 616 nm are gradually quenched upon introducing Mn(VII) based on the inner filter effect, concurrently accompanying with significant FL color variation from bright red to dark red. Inspired by the above-mentioned phenomena, hue-saturation-values (HSV) of real-time captured images could be precisely quantified through a color recognition APP within the smartphone, of which the V/S values could be employed to quantify Mn(VII) with a linear range of 50-400 μM. Furthermore, confocal fluorescence imaging of HeLa cells and zebrafish larvae demonstrates that R-CDs could be employed for the visual determination of Mn(VII) in vivo and in vitro, illustrating that R-CDs possess powerful practical application prospect in biosystem.

Investigating Viability of Split-Stepped Gate Field Plate Design on Ga2O3 MOSFET for High Power Applications

Investigating Viability of Split-Stepped Gate Field Plate Design on Ga2O3 MOSFET for High Power Applications

Performance enhancement of nanotube junctionless FETs with low doping concentration rings

To reduce the static power consumption of the NT JLFET and the effect of SCEs on the NT JLFET, A nanotube junctionless field effect transistor with cyclic low doping concentration regions (C NT JLFET) is proposed. Based on Sentaurus TCAD numerical simulations, the electrical properties of the C NT JLFET and the NT JLFET were comparatively investigated, and the effects of the length (L CD) and radius (R CD) of cyclic low doping concentration regions on the electrical properties of the C NT JLFETs were studied. The C NT JLFET reduces the gate-induced drain leakage (GIDL) due to lateral band-to-band-tunneling (L-BTBT) as compared to the NT JLFET. As the L CD or R CD increases, the off-state current decreases. In addition, the C NT JLFET suffers from fewer short channel effects (SCEs), such as threshold voltage roll-off, drain-induced barrier lowering and subthreshold swing deterioration, compared to the NT JLFET. The inhibition of L-BTBT and attenuation of SCEs by cyclic low doping concentration regions remains when the channel length of the C NT JLFET is shortened to 10 nm. The C NT JLFET are suitable for low power applications as they exhibit reduced L-BTBT and suffer from fewer SCEs.

Spread.gl: visualising pathogen dispersal in a high-performance browser application.

Phylogeographic analyses are able to exploit the location data associated with sampled molecular sequences to reconstruct the spatio-temporal dispersal history of a pathogen. Visualisation software is commonly used to facilitate the interpretation of the accompanying estimation results, as these are not always easily interpretable. spread.gl is a powerful, open-source and feature-rich browser application that enables smooth, intuitive and user-friendly visualisation of both discrete and continuous phylogeographic inference results, enabling the animation of pathogen geographic dispersal through time. spread.gl can render and combine the visualisation of several data layers, including a geographic layer (e.g., a world map), multiple layers that contain information extracted from the input phylogeny, and different types of layers that represent environmental data. As such, users can explore which environmental data may have shaped pathogen dispersal patterns, that can subsequently be formally tested through more principled statistical analyses. We showcase the visualisation features of spread.gl on several representative pathogen dispersal examples, including the smooth animation of a phylogeny encompassing over 17,000 genomic sequences resulting from a large-scale SARS-CoV-2 analysis.

A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications

A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications