Abstract Hybrid bonding for 3D integration requires reliable direct bonding interface of dielectrics. Lately, the spotlight has focused on SiCN/SiCN bonding considering its superior bonding performance by the dangling bonds-facilitated nanovoid closure mechanisms, but it is reported to be sensitive to reactive species especially under the high temperatures. Recent work proposed SiN/SiO2 asymmetric bonding showing a void-free bonding interface and bond energy higher than 2.5 J/m2 as a promising candidate for direct bonding applications. Interestingly, we observed opposite bonding behaviors between SiCN and SiN in corresponding symmetric bonding pair and asymmetric bonding pair (with SiO2). Thus, a comprehensive fundamental understanding on the bonding of different dielectrics is needed to guide the specifications of the bonding layer for enabling a void-free and highly reliable bonding interface. In this study, we systematically quantified the nanovoids in the bonding interface of SiCN/SiCN, SiCN/SiO2, and SiN/SiO2 through positron annihilation spectroscopy and simulation, dangling bond formation by electron spin resonance, and the film passivation property by quasi-steady-state photoconductance. By correlating the film properties and bonding performance, the model of SiCN bonding is extended towards its SiCN/SiO2 asymmetric bonding, and a new model of the nanovoid closure mechanism in SiN bonding is first-time proposed.