The influence of grain boundaries on the elctrical properties of laser-recrystallized polycrystalline silicon films with typical grain size 1 × 20 μm 2 and doping concentration between 10 16 cm −3 and 10 20 cm −3 has been investigated. Sheet resistance and its temperature dependence are found to be very close to the value expected for the single crystal material over a wide range of doping concentrations. Deviations occur at low doping and are related to the average grain size perpendicular to the current flow. Standard deviation and annealing power dependence of sheet resistance R □ are also strongly correlated to the influence of grain boundaries as measured by the deviation of R □ from the ideal, single crystal value. At doping concentrations > 10 18 cm −3, extremely linear resistors are reproducibly obtained. Resistance ratios can be controlled to better than 1% and temperature coefficients 10 −4 per degree can be achieved by proper choice of doping concentration. The pressure dependence of these polycrystalline silicon films was also measured. Very large gauge factors of about 55 for p-type samples are found. The temperature coefficient of the gauge factors at doping concentrations of about 10 18 cm −3 is near the single crystal value of about −1.8 × 10 −3 per degree. As an application example, a pressure sensor using laser-recrystallized polycrystalline silicon as piezoresistive resistors on a thin silicon diaphragn is introduced. At a doping concentration of about 10 20 cm −3 a temperature-compensated output signal of about 2 × 10 −4 per degree can be achieved.