Abstract
We demonstrate, for the first time, a technique for the fabrication of polysilicon resistors with excellent control and temperature characteristics: a standard deviation of 2.5 Ω and temperature variation of -5.6% from 25° to 125°C for 1.96 K Ω, 4.5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> Boron implanted polysilicon resistors. The technique is based on fabricating resistors in laser recrystallized polysilicon on SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> . Resistor performance is compared to that of similar resistors fabricated in standard LPCVD polysilicon and in single crystal silicon.
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