The dependence of the effective diffusion coefficient of Cu on boron concentration in p-type silicon at different temperatures has been measured. The quantitative diffusion and gettering of Copper from the bulk into the polysilicon backside have been measured at different temperatures 200 °C, 250 °C, 300 °C and 350 °C, in silicon doped with 1.14x10 1 8 (0.04 Ωcm), 3.24x10 1 8 (0.02 Qcm) and 8.49x10 1 8 (0.01 Qcm) boron atoms/cm 3 . This result has been compared with modeling values calculated by the equation for effective diffusion coefficient reported by A. Istratov et al. We have proposed a simple numerical equation for the calculation of the effective Cu diffusion coefficient for a wide range of boron concentration N a <10 1 9 atoms/cm 3 in silicon. From the results of this study it has been suggested that in the presence of high boron concentrations the gettering mechanism in backside polysilicon is governed by segregation type gettering.