An upside-down fabricated GaP monolithic display having p-n junctions formed by zinc diffusion is developed and the feasibility of practical use studied. In this device, the zinc diffusion is performed at a temperature in the vicinity of 650 °C to increase the efficiency. The device front plane with the p-n-junction segments faces the substrate upon which individual digits are assembled, and the light emitted from the p-n junctions travels through the GaP chip and exits from the polished back plane, which faces the observer. The individual wire bonding of each segment is eliminated using flip-chip technique. It is thought that this device is the most suitable for practical use.
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