Abstract
An upside-down fabricated GaP monolithic display having p-n junctions formed by zinc diffusion is developed and the feasibility of practical use studied. In this device, the zinc diffusion is performed at a temperature in the vicinity of 650 °C to increase the efficiency. The device front plane with the p-n-junction segments faces the substrate upon which individual digits are assembled, and the light emitted from the p-n junctions travels through the GaP chip and exits from the polished back plane, which faces the observer. The individual wire bonding of each segment is eliminated using flip-chip technique. It is thought that this device is the most suitable for practical use.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
