Polarization Hysteresis Research Articles

Consensus, Polarization and Hysteresis in the Three-State Noisy q-Voter Model with Bounded Confidence.

In this work, we address the question of the role of the influence of group size on the emergence of various collective social phenomena, such as consensus, polarization and social hysteresis. To answer this question, we study the three-state noisy q-voter model with bounded confidence, in which agents can be in one of three states: two extremes (leftist and rightist) and centrist. We study the model on a complete graph within the mean-field approach and show that, depending on the size q of the influence group, saddle-node bifurcation cascades of different length appear and different collective phenomena are possible. In particular, for all values of , social hysteresis is observed. Furthermore, for small values of , disagreement, polarization and domination of centrists (a consensus understood as the general agreement, not unanimity) can be achieved but not the domination of extremists. The latter is possible only for larger groups of influence. Finally, by comparing our model to others, we discuss how a small change in the rules at the microscopic level can dramatically change the macroscopic behavior of the model.

Thin Films Deposition and Energy Storage Density in Lead-Free Ferroelectric Ba1-XSrxTiO3 Thin Film Capacitors (x = 0.1, 0.3, 0.7)

Structure, phonon, and energy storage density in Sr2+-substituted lead-free ferroelectric Ba1-xSrxTiO3 (BSTX) thin films (x = 0.1, 0.3, and 0.7) were prepared using RF sputtering technique, and investigated using x-ray diffraction, Raman, and ferroelectric polarization measurements as a function of temperature. The thin film is tetragonal for x = 0.1 with large c/a ratio. The tetragonal anisotropy (c/a ratio) decreases upon increasing x and that turns cubic for x = 0.7. All these structural and ferroelectric properties change due to change in the c/a ratio. Temperature dependent phonon spectra analyses (80-500 K) indicate decrease in tetragonal to cubic phase transition temperature upon x due to reduction in anisotropy. Overdamping of ~90 cm-1 E soft phonon mode along with a dramatic decrease of intensity of ~160 cm-1 A-phonon mode was observed around the tetragonal ferroelectric to cubic paraelectric phase (< 300 K). The energy storage densities of these thin film capacitors (metal-insulator-metal) were estimated from the measured polarization hysteresis loops and were compared. For x = 0.1, a larger energy storage density (Ure) of ~29 J/cm3 with efficiency of ~48 % was estimated at an applied voltage of 1.1 MV/cm. Nearly room temperature transition temperature Tc, larger dielectric constant and encouraging energy density values of our lead-free BSTX thin film capacitors suggest their possible application in high energy storage and pulse power technology. These results will be presented in detail in the ECS meetings.

Studies on Electrical Energy Storage Density in Lead-Free Ferroelectric Ba1-x SrxTiO3 (x = 0.1, 0.3, and 0.7) Capacitors

Structure, phonon, and energy storage density were studied in Sr2+-substituted lead-free ferroelectric Ba1-x SrxTiO3 (BSTx) (x = 0.1, 0.3, and 0.7) samples, prepared using solid state reaction techniques, utilizing X-ray diffraction, Raman, and ferroelectric polarization measurement techniques. The system is tetragonal for x = 0.1 with large c/a ratio at room temperature. The tetragonal anisotropy decreases with increasing x, and becoming cubic for x > 0.3. All these structural properties change due to change in the c/a ratio upon rising temperature. Temperature dependent phonon spectroscopic results (80-500 K) indicate reduction in tetragonal to cubic phase transition temperature upon increasing x due to reduction in tetragonal anisotropy (c/a). Overdamping of ~90 cm-1 E-soft phonon mode and a dramatic decrease in the intensity of ~160 cm-1 A-mode were observed at around the tetragonal ferroelectric to cubic paraelectric phase. Using UV-Vis optical absorption spectra, the optical band gaps of these compounds were calculated as 1.73, 1.7, and 1.68 eV as a function of increasing the dopant concentration (x). The energy storage densities of these electrically polled BSTx capacitors were estimated using the polarization hysteresis loops. For x = 0.7, a large energy storage density (Ure) of 20 Joule/cm3 with the efficiency of 57 % was estimated at applied electrical field of 88 kV/cm. Close to Tc large dielectric constant and high energy density values of BSTx capacitors indicate its possible application in high energy storage and pulse power devices. These results will be presented in detail at the meeting.

Influence of the dwell time in the polarization hysteresis of polymer electrolyte membrane fuel cells

The extent of the cell voltage hysteresis observed in polarization curves of PEM fuel cells and the origins causing this effect are investigated by performing experimental polarization curves with different dwell times for a 50 cm2 PEM fuel cell. Electrochemical Impedance Spectroscopy measurements are carried out in order to determine the relative contributions of the different polarizations (ohmic, activation, and concentration polarization). Equivalent circuits were obtained from the impedance spectra, where the interpretation of the circuit parameters enabled the analysis of the origin and extent of the cell voltage hysteresis. It was identified that the cause of the cell voltage hysteresis is actually dominated by the changes in the concentration polarization at low current densities, and by the changes in the activation polarization at high current densities. The cell ohmic resistance (and consequently the membrane hydration) presents a minor effect on the cell voltage hysteresis. The effect of the dwell time in the cell voltage hysteresis (with values ranging from 15 to 25 mV) presents a mixed trend, with an initial decrease for increasing dwell times from 120 to 600 s, and a later increase and a final almost constant hysteresis for longer dwell times.

Synthesis, structure, and dielectric properties of the 0.91NaNbO3–0.09SrZrO3/SrRuO3/MgO(001) heterostructure

We report on the synthesis of 0.91NaNbO3-0.09SrZrO3/SrRuO3/MgO(001) heterostructure by the single-stage radio frequency cathode sputtering method. Addition of 9% of SrZrO3 to sodium niobate results in the room temperature antiferroelectric state of the 0.91NaNbO3–0.09SrZrO3 film, which is evidenced from double loop-shaped hysteresis of electric polarization. Temperature evolution of the dielectric constant reveals a diffuse maximum at ∼ 325 K, which can be ascribed to the structural phase transition. At room temperature, the film shows the storage density of 1284 mJ/cm3 and storage efficiency of 76%.

Improved ferroelectric characteristics of ALD lanthanum-doped hafnium oxide thin film by controlling post-cooling time

A study was conducted on how the subsequent cooling time affects the ferroelectric (FE) characteristics of atomic layer deposited (ALD) lanthanum (La) doped HfO2 thin films after the crystallization heat treatment in the form of TiN/La-doped HfO2/TiN metal-ferroelectric-metal (MFM) device structure. The ALD La-doped HfO2 thin film was cooled to room temperature in a chamber (“chamber cooling” - slower cooling) or in an air atmosphere (“air cooling” - faster cooling). Based on the polarization vs electric field (P-E) hysteresis curve, the double remanent polarization (2Pr) values of the chamber cooling and air-cooling are 9.5 μC/cm2 and 40 μC/cm2, respectively. This drastic improvement stems from more orthorhombic phase formation within La-doped HfO2 thin film, which is confirmed by smaller grain size, higher amount of oxygen vacancies, and more tensile stress within HfO2 thin film. Our results suggest that FE properties of La-doped HfO2-based thin film can be significantly modulated by post cooling processes.

Effective strategy to improve energy storage properties in lead-free (Ba0.8Sr0.2)TiO3-Bi(Mg0.5Zr0.5)O3 relaxor ferroelectric ceramics

Although relaxor ferroelectrics (RFEs) have received considerable attention in advanced pulsed power capacitor systems (APPCSs) due to their numerous advantages, it remains difficult to achieve comprehensive outstanding energy storage performance (ESP) owing to the trade-offs among recoverable energy density (Wrec), energy efficiency (η) and thermal stability. In this work, we proposed a collaborative optimization strategy for improving the ESP of (Ba0.8Sr0.2)TiO3 (BST)-based RFE ceramics, i.e., the introduction of Bi(Mg0.5Zr0.5)O3 (BMZ) and the use of viscous polymer process (VPP). The former obstructs the long-range ferroelectric order, induces high dynamic polar nanoregions and broadens temperature stabilized platform, thus alleviating the polarization hysteresis and increasing the energy efficiency. The latter progressively dilute pore concentration and thins the sample to ∼70 μm, which can greatly improve breakdown strength. As a result, exceptional ESP parameters are simultaneously achieved in 0.85BST-0.15BMZ ceramics by VPP (BMZ15VPP), which exhibit ultrahigh Wrec (10.3 J/cm3) and high η (88%) under 720 kV/cm while maintaining stable temperature stability. It is also noteworthy that a superior current density of 800 A/cm2 and a power density of 140 MW/cm3 are obtained. The overall excellent performance implies the competitiveness of BMZ15VPP in APPCSs and the feasibility of this strategy in designing compositive high ESP ceramic systems.

Enhancement of ferromagnetism and ferroelectricity by oxygen vacancies in mullite Bi2Fe4O9 in the Bi2(Sn0.7Fe0.3)2O7-x matrix

A new bismuth pyrostannate-based composite Bi2(Sn0.7Fe0.3)2O7-x/Bi2Fe4O9 (BSFO/BFO) has been obtained by the solid-state synthesis. Temperature dependences of the magnetic hysteresis and remanent magnetization and the nonlinear field dependence of the magnetization for the Bi2Fe4O9 antiferromagnet have been established. A temperature of the formation of canted sublattices in the antiferromagnet with the occurrence of a spontaneous moment in mullite has been determined. The mechanism of the electric polarization hysteresis and the temperature dependence of the remanent polarization have been established. It has been shown, that, below the Néel temperature, the dipole polarization is induced by a lone electron pair of bismuth ions. At T > TN, the migration polarization is caused by the charge carrier density at the chemical potential. A significant increase in the remanent magnetization of mullite in the bismuth pyrostannate matrix with oxygen vacancies over a value typical of polycrystalline mullite has been established. Remanent magnetization is explained in terms of ferron model.

High radiation tolerance of electrocaloric (1-x)Pb(Mg1/3Nb2/3)O3–xPbTiO3

High radiation tolerance of functional materials in harsh environments is the key requirement for the operation of particle accelerators, medical devices, nuclear power plants, satellites, and spacecraft. Neutron and gamma (γ) radiation can seriously affect the functional properties of the irradiated materials and thus the performance of the entire device. In this work, the feasibility of using (1-x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 (PMN–100xPT) electrocaloric materials in applications where the material is exposed to high neutron and γ-radiation is investigated. For this purpose, three different compositions of PMN–100xPT ceramics (x = 0, 0.1, and 0.35) were prepared and their dielectric, ferroelectric and electrocaloric properties were investigated before and after neutron and γ-irradiation. The samples were irradiated with a neutron fluence of 1015 to 1017 neutrons cm−2 with an energy of 1 MeV, which exceeds the largest expected neutron irradiation in the European Council for nuclear Research (CERN) and simultaneously exposed to γ-irradiation. The neutron and γ-radiation partially affect the functional properties of the PMN–35PT, the ceramic with distinct ferroelectric and weakened relaxor features, with some differences observed in the domain switching behavior, measured by conventional polarization versus electric field (P–E) hysteresis, at the highest radiation dose of 1017 neutrons cm−2. In contrast, the functional properties of the irradiated PMN and PMN–10PT samples with relaxor behavior are quite similar to those of the pristine samples, therefore, we conclude that these materials can be used as working materials in EC coolers exposed to such harsh environments.

Structural, dielectric, electrical and optical properties of a double perovskite: BaNaFeWO6 for some device applications

In this paper, the synthesis (by solid-state reaction route) and characterization (structural, microstructural, electrical, and optical properties) of the BaNaFeWO6 lead-free double perovskite are reported. Room temperature structural analysis suggests that the material crystallizes in monoclinic crystal symmetry with average crystallite size and lattice strain of 55 nm and 0.023% respectively. The incorporation of the Na/Fe at both sites (Ba and W) of BaWO4 is confirmed from the room temperature Raman study. A study of microstructural and compositional characteristics of the sample by using scanning electron microscopy (SEM) and EDAX (energy dispersive analysis X-ray) has provided the quality (uniform and compactness) of the sample. The detailed studies of the frequency and temperature dependence of dielectric, impedance, and conductivity properties of the material suggest the presence of high dielectric dispersion, non-Debye conduction, and relaxation mechanism in it. The semiconducting nature is confirmed by the decreasing resistance or radius of semicircular arcs in both impedance analysis and Nyquist plots. This nature is also well supported by fitted parameters evaluated using ZSIMPWIN software. The temperature dependence of resistance provides a good stability factor, sensitivity factor, and thermistor constant, which may be useful for applications in the fields of the thermistor-related devices. The field-dependent polarization (P-E) hysteresis loop suggests the possibility of ferroelectricity in the sample. The sample has an energy bandgap of 2.72 eV deduced from its UV–visible spectrum, which may be useful for some applications in optoelectronic devices

High-Performance PbZrO3-based antiferroelectric multilayer capacitors based on multiple enhancement strategy

Antiferroelectric (AFE) materials are thought to be one of the most promising candidates for energy storage application owing to their large polarization difference between maximum polarization and remanent polarization originating from unique electric field-induced phase transition, but the large polarization hysteresis leads to an inferior energy efficiency, which restricts their applications in advanced pulsed power devices. Herein, we propose a multiple enhancement strategy of composition and structural modification to solve this problem. The (Pb0.875La0.05Sr0.05)(Zr0.695Ti0.005Sn0.3)O3 (PLSZTS) antiferroelectric ceramic and corresponding multilayer ceramic capacitor (MLCC) are fabricated. A low hysteresis is obtained via composition optimization. Moreover, multilayer ceramic constructing improves significantly breakdown strength (BDS) due to decreased thickness of dielectric layer. An ultrahigh recoverable energy density (Wdis) of 19.9 J/cm3, together with a high energy efficiency (η) of 96.4% are achieved synchronously at an electric field of 85 kV/mm. In addition, the studied MLCCs also possess outstanding discharge energy storage properties with a high discharge energy density (Wdis) of 15.4 J/cm3 and a large power density (PD) of 170.5 MW/cm3, a wide temperature range of 20–120 °C, and strong fatigue endurance after 3000 cycles. The present research results not only offer a potential candidate for high-power energy storage devices, but also, more importantly, develop a universal approach for optimizing the overall energy storage performance.

High Energy Storage Density in Nanocomposites of P(VDF-TrFE-CFE) Terpolymer and BaZr0.2Ti0.8O3 Nanoparticles.

Polymer materials are actively used in dielectric capacitors, in particular for energy storage applications. An enhancement of the stored energy density can be achieved in composites of electroactive polymers and dielectric inorganic fillers with a high dielectric permittivity. In this article, we report on the energy storage characteristics of composites of relaxor terpolymer P(VDF-TrFE-CFE) and BaZr0.2Ti0.8O3 (BZT) nanoparticles. The choice of materials was dictated by their large dielectric permittivity in the vicinity of room temperature. Free-standing composite films, with BZT contents up to 5 vol.%, were prepared by solution casting. The dielectric properties of the composites were investigated over a wide range of frequencies and temperatures. It was shown that the addition of the BZT nanoparticles does not affect the relaxor behavior of the polymer matrix, but significantly increases the dielectric permittivity. The energy storage parameters were estimated from the analysis of the unipolar polarization hysteresis loops. The addition of the BZT filler resulted in the increasing discharge energy density. The best results were achieved for composites with 1.25–2.5 vol.% of BZT. In the range of electric fields to 150 MV/m, the obtained materials demonstrate a superior energy storage density compared to other P(VDF-TFE-CFE) based composites reported in the literature.

Concurrent achievement of giant energy density and ultrahigh efficiency in antiferroelectric ceramics via core–shell structure design

The boom in high-power-density electronics and advanced pulsed power systems has led to a requirement for high-energy-density dielectric capacitors, for which the key enabler is the availability of dielectric materials with high energy densities and high efficiencies. Although antiferroelectric ceramics are promising dielectric materials with high energy densities, they have low efficiencies. In this study, we address this problem through the core–shell structure design. A phase-field model is developed by considering the core as antiferroelectric and the shell as linear dielectric, and the polarization hysteresis loops are determined. The results show that the polarization–electric field loop of the core–shell sample is slanted, with a delayed saturation polarization, decreased maximum polarization, and declined hysteresis loss compared with the pure sample. This phenomenon becomes more distinct with increasing shell fraction and decreasing shell permittivity, and vanished hysteresis is achieved in samples with a high shell fraction and a low shell permittivity. Through deconvolution, it is determined that the underlying mechanism of energy storage is the difference in the antiferroelectric polarization contribution of various shell parameters. It is found that a giant energy density of 15.5 J/cm3 and an ultrahigh efficiency of 99.7% at the saturation polarization can be achieved concurrently for a certain core–shell sample; these values considerably exceed the corresponding values (5.0 J/cm3 and 52.8%) for the pure sample. The findings of this study can serve as guidance for engineering core–shell structures, thus paving the way for enhancing the energy-storage performance of antiferroelectric ceramics.

Perspectives on domain engineering for dielectric energy storage thin films

Dielectric energy storage capacitors as emerging and imperative components require both high energy density and efficiency. Ferroelectric-based dielectric thin films with large polarizability, high breakdown strength, and miniaturization potential hold promises for competitive integrated and discrete energy storage devices. Since ferroelectric domains are central to polarization hysteresis loops and, hence, energy storage performances, domain engineering has been widely used in dielectric thin films. In this Perspective, we focus on the most state-of-the-art dielectric energy storage films in the framework of domain engineering. Generally applicable domain engineering strategies are overviewed, followed by articulative examples of their implementation in modulating domain sizes and symmetries that enhance the energy storage. Finally, we envision prospects of further improvements of dielectric thin films within domain engineering and beyond.

Excellent energy storage performance achieved in novel PbHfO3-based antiferroelectric ceramics via grain size engineering

• All ceramics were prepared by rolling process. • A very high W rec of 12.2 J cm −3 and efficiency of 92% can be achieved in the Pb 0.98 La 0.02 (Hf 0.65 Sn 0.35 ) 0.995 O 3 ceramic. • The Pb 0.98 La 0.02 (Hf 0.65 Sn 0.35 ) 0.995 O 3 ceramic exhibits thermal stability over a wide temperature range. • The Pb 0.98 La 0.02 (Hf 0.65 Sn 0.35 ) 0.995 O 3 ceramic displays a high W D of 5.3 J cm −3 and a discharge speed of 103 ns. • The energy storage performance of AFEs can be improved by the approach of grain size engineering. Incremental attention has been paid to the PbHfO 3 -based antiferroelectric ceramics for its giant potential in dielectric capacitors and pulsed power techniques. Here, ultrahigh energy storage properties (W rec = 12.2 J cm −3 , η = 92%) and satisfied charge–discharge property (W D = 5.3 J cm −3 , t 0.9 = 103 ns, P D = 245 MW cm −3 ) are achieved in the Pb 0.98 La 0.02 (Hf 0.65 Sn 0.35 ) 0.995 O 3 antiferroelectric ceramics. In addition, the studied ceramics also exhibited superior thermal stability within 20–120 °C (W rec > 8 J cm −3 , with minimal variation < 0.5 %). Outstanding energy storage properties can be explained by refined grain size, disrupted local structure, which is confirmed by ceramic morphology, Raman spectrum and polarization hysteresis. All these features greatly promote the application of PbHfO 3 -based ceramics in energy storage fields.

Phase engineering in NaNbO3 antiferroelectrics for high energy storage density

The NaNbO3 antiferroelectrics have been considered as a potential candidate for dielectric capacitors applications. However, the high-electric-field-unstable antiferroelectric phase resulted in low energy storage density and efficiency. Herein, good energy storage properties were realized in (1-x)NaNbO3-xNaTaO3 ceramics, by building a new phase boundary. As a result, a high recoverable energy density (Wrec) of 2.2 J/cm3 and efficiency (η) of 80.1% were achieved in 0.50NaNbO3-0.50NaTaO3 ceramic at 300 kV/cm. The excellent energy storage performance originates from an antiferroelectric-paraelectric phase boundary with simultaneously high polarization and low hysteresis, by tailoring the ratio of antiferroelectric and paraelectric phases. Moreover, the 0.50NaNbO3-0.50NaTaO3 ceramic also exhibited good temperature and frequency stability, together with excellent charge-discharge performance. The results pave a good way of designing new NaNbO3-based antiferroelectrics with good energy storage performance.

Energy storage properties under moderate electric fields in BiFeO3-based lead-free relaxor ferroelectric ceramics

Achieving high overall energy-storage properties under moderate electric fields is of great significance for practical applications of energy-storage ceramic capacitors. In this work, an ultrahigh recoverable energy-storage density (Wrec) of ∼ 3.9 J/cm3 and a high energy-storage efficiency (η) of ∼ 80% are simultaneously achieved under a moderate electric field of 25 kV/mm in a new ternary lead-free relaxor ferroelectric (FE) ceramic of 1 wt.%Nb2O5-doped 0.46Bi1.02FeO3-0.29BaTiO3-0.25Bi0.5Na0.5TiO3 (BF-BT-BNT). Together with excellent thermal and frequency stability of Wrec = 1.68 ± 12%J/cm3, η = 90 ± 9%, 0.1–100 Hz; Wrec = 1.61 ± 6%J/cm3, η = 87 ± 5% within 30–170 °C, a large power density of PD ∼ 43.0 MW/cm3 and a fast discharge rate of t0.9 ∼ 45 ns, Nb2O5-doped BF-BT-BNT ceramics exhibit promising potentials for environment-friendly advanced pulsed power capacitors. Multiscale structure characterization reveals that the incorporation of Nb2O5 into BF-BT-BNT significantly increases the local structure disorder, leading to a heterogeneous nanodomain morphology. This makes the Nb2O5-doped BF-BT-BNT ceramic maintain a high maximum polarization, but obviously suppressed polarization hysteresis, thus responsible for significantly improved overall energy-storage properties.

Nonvolatile modulation of luminescence in perovskite oxide thin films by ferroelectric gating.

Nonvolatile and giant modulation of luminescence can be realized by the ferroelectric gating effect in a Ga3+/Pr3+ co-doped BaTiO3 ultra-thin film epitaxially grown on a [Pb(Mg1/3Nb2/3)O3]0.7-[PbTiO3]0.3 single-crystallized substrate. The change behavior of the emission intensity matches that of the ferroelectric polarization hysteresis loop with a giant enhancement of over 13 times with negative polarization orientation. The interaction of O2- at the O2p orbital in the valence band and Pr3+ with injected holes by the ferroelectric gating effect promotes the formation of excited state O-, Pr4+, or Pr3+q. This ferroelectric gating method can promote the development of controllable photo-, electroluminescent, and other optoelectronic devices for display, sensing, communication, and so on.

Phase transition and ferroelectric properties study of lead-free 0.95BaTiO3-0.05CaSnO3 ceramics synthesized by high energy ball milling assisted solid state reaction route

Lead-free 0.95BaTiO3-0.05CaSnO3 ceramics were synthesized by high energy ball milling (HEBM) assisted solid state reaction route. Calcination temperature and time for phase formation was optimized and found to be relatively less than other BaTiO3-doped system. X-ray diffraction (XRD) and Raman study were performed for phase examination of the synthesized material. Rietveld analysis confirmed double-phase co-existence of this 95/05 system at room temperature. Sintering temperature and time for better densification were optimized to be 1250°C for 3hr. From dielectric study it was found that ferroelectric-paraelectric phase transition temperature(Tc, observed≈ 55°C) was reduced considerably in compared to the pure BaTiO3 system (Tc≈ 125°C). No relaxorbehaviour was found from dielectric study. Polarization vs. electric field hysteresis loop study showed the development of saturated hysteresis loops but the remnant polarization was found decreased compared to pure BaTiO3 system.

A Combined Optimization Strategy for Improvement of Comprehensive Energy Storage Performance in Sodium Niobate-Based Antiferroelectric Ceramics.

Sodium niobate (NaNbO3, NN)-based lead-free antiferroelectric (AFE) ceramics are currently the focus of most attention on account of their outstanding energy storage density. Nevertheless, the high loss energy density (Wloss) by unique field-induced AFE-ferroelectric (FE) phase transition in pure NN ceramic and low breakdown electric field (Eb) largely restrict their practical application. Here, a combined optimization strategy was aimed at ameliorating energy storage characteristics of NN-based ceramics. First, the introduction of BiFeO3-SrTiO3 binary solid solution in pure NN ceramics destroys the long-range polar ordering and reduce the tolerance factor (t), thus reducing the polarization hysteresis, stabilizing the AFE phase and enhancing the energy storage efficiency. Then, the two-step sintering method was used to improve the compactness of ceramics and reduce the grain size. Finally, the VPP method was used to reduce the porosity, and thin the ceramic disk to a thickness of ∼100 μm. The high compactness and small thickness could effectively enhance the maximum breakdown electric field of ceramics. Ultimately, the optimum energy storage characteristics were obtained by the improvement of a combined optimization strategy, namely, an exceptional recoverable energy storage density (Wrec = 5.29 J/cm3) and efficiency (η = 82.1%) at a very high breakdown electric field (Eb = 380 kV/cm). This combined optimization strategy establishes a universal approach to ameliorate the energy storage characteristics of NN-based AFE ceramics for energy storage.