Plasma Etching Technique Research Articles

Fabrication and Deterministic Transfer of High-Quality Quantum Emitters in Hexagonal Boron Nitride

Color centers in solid state crystals have become a frequently used system for single photon generation, advancing the development of integrated photonic devices for quantum optics and quantum communication applications. In particular, defects hosted by two-dimensional (2D) hexagonal boron nitride (hBN) are a promising candidate for next-generation single photon sources, due to its chemical and thermal robustness and high brightness at room temperature. The 2D crystal lattice of hBN allows for a high extraction efficiency and easy integration into photonic circuits. Here we develop plasma etching techniques with subsequent high temperature annealing to reliably create defects. We show how different fabrication parameters influence the defect formation probability and the emitter brightness. A full optical characterization reveals the higher quality of the created quantum emitters, represented by a narrow spectrum, short excited state lifetime and high single photon purity. We also investigated the photostability on short and very long timescales. We utilize a wet chemically-assisted transfer process to reliably transfer the single photon sources onto arbitrary substrates, demonstrating the feasibility for the integration into scalable photonic quantum information processing networks.

Layer-controllable graphene by plasma thinning and post-annealing

The electronic structure of graphene depends crucially on its layer number and therefore engineering the number of graphene’s atomic stacking layers is of great importance for the preparation of graphene-based devices. In this paper, we demonstrated a relatively less invasive, high-throughput and uniform large-area plasma thinning of graphene based on direct bombardment effect of fast-moving ionic hydrogen or argon species. Any desired number of graphene layers including trilayer, bilayer and monolayer can be obtained. Structural changes of graphene layers are studied by optical microscopy, Raman spectroscopy and atomic force microscopy. Post annealing is adopted to self-heal the lattice defects induced by the ion bombardment effect. This plasma etching technique is efficient and compatible with semiconductor manufacturing processes, and may find important applications for graphene-based device fabrication.

Large-scale fabrication of free-standing and sub-μm PDMS through-hole membranes.

Free-standing polydimethylsiloxane (PDMS) through-hole membranes have been studied extensively in recent years for chemical and biomedical applications. However, robust fabrication of such membranes with sub-μm through-holes, and at a sub-μm thickness over large areas is challenging. In this paper, we report a robust and simple method for large-scale fabrication of free-standing and sub-μm PDMS through-hole membranes, combining soft-lithography with reactive plasma etching techniques. First, arrays of sub-μm photoresist (PR) columns were patterned on another spin-coated sacrificial PR layer, using conventional photolithography processes. Subsequently, a solution of PDMS : hexane at a 1 : 10 ratio was spin-coated over these fabricated arrays. The cured PDMS membrane was etched in a plasma mixture of sulfur hexafluoride (SF6) and oxygen (O2) to open the through-holes. This PDMS membrane can be smoothly released with a supporting ring by completely dissolving the sacrificial PR structures in acetone. Using this fabrication method, we demonstrated the fabrication of free-standing PDMS membranes at various sub-μm thicknesses down to 600 ± 20 nm, and nanometer-sized through-hole (810 ± 20 nm diameter) densities, over areas as large as 3 cm in diameter. Furthermore, we demonstrated the potential of the as-prepared membranes as cell-culture substrates for biomedical applications by culturing endothelial cells on these membranes in a Transwell-like set-up.

CoPt/TiN films nanopatterned by RF plasma etching towards dot-patterned magnetic media

CoPt thin films as possible candidates for Bit Patterned magnetic Media (BPM) were prepared and investigated by electron microscopy techniques and magnetic measurements. The structure and morphology of the Direct Current (DC) sputtered films with N incorporation were revealed in both as-prepared and annealed state. Nanopatterning of the samples was carried out by means of Radio Frequency (RF) plasma etching through a Langmuir-Blodgett film of silica nanospheres that is a fast and high throughput technique. As a result, the samples with hexagonally arranged 100 nm size separated dots of fct-phase CoPt were obtained. The influence of the order of nanopatterning and anneling on the nanostructure formation was revealed. The magnetic properties of the nanopatterned fct CoPt films were investigated by Vibrating Sample Magnetometer (VSM) and Magnetic Force Microscopy (MFM). The results show that CoPt thin film nanopatterned by means of the RF plasma etching technique is promising candidate to a possible realization of BPM. Furthermore, this technique is versatile and suitable for scaling up to technological and industrial applications.

P-GaN Gate Enhancement-Mode HEMT Through a High Tolerance Self-Terminated Etching Process

An enhancement-mode high-electron-mobility transistor with a p-GaN gate was fabricated by using a chemistry-ease Cl2/N2/O2-based inductively coupled plasma etching technique. This etching technique features a precise etching self-termination at the AlGaN barrier surface, which enables a broad process window with a large tolerance of etching time. With a post-annealing process, the property of two-dimensional electron gas (2DEG) can be restored to a high level after the etching. The mechanisms of etching self-termination and 2DEG recovery were clarified. The fabricated device exhibits a drain saturation current of 355 mA/mm with a threshold voltage of +1.1 V, an on/off ratio of $10^{7}$ , and a static on-resistance ${R} _{\mathrm{ ON}}$ of $10~{\Omega }\cdot $ mm. Furthermore, normally-off operation of the device can be achieved across the wafer.

(Invited) AlN and ScAlN Contour Mode Resonators for RF Filters

A very strong technological market pull for wide bandgap semiconductor devices comes from the piezoelectric properties of aluminum nitride (AlN). Portable wireless products are expanding in their use of AlN films as RF devices in bulk acoustic wave (BAW) and surface acoustic wave (SAW) filters with substantial performance properties over other semiconductor materials. To maintain market dominance properties such as size, integration costs, and filter performance metrics continue to improve. Metrics closely coupled to material properties such as piezoelectric coupling coefficient (k2 eff) and quality factor (Q) arising from material sputtering conditions directly impact key filter parameters such as insertion loss, bandwidth, and rejection, and these properties have been intensely investigated as have device and filter architecture. To improve versatility, alternate resonator designs are emerging that combine micromachining and different piezoelectric coefficients such as d31 instead of d33. These contour mode resonators (CMR) differ slightly from BAW and SAW since resonator frequency is determined lithographically and devices are suspended which provides the opportunity to provide multiple frequencies on a single die with reduction of cross talk and integration on top of CMOS. This work will discuss our efforts in utilizing CMRs to achieve a wide range of operating frequencies on a single die with improved performance. In this presentation we will discuss our RF sputter deposition process for creating high-performance AlN films, as well as plasma etching and integration techniques for fabricating CMRs. Fabricated devices spanning a range of 400 MHz to 3 GHz will be demonstrated with spur modal interaction discussed. Further, early investigations into scandium aluminum nitride (ScAlN) suggest that metrics such as Q and K2 eff can substantially improve simultaneously while still providing a wide frequency range of devices.

High-aspect ratio nanopatterning via combined thermal scanning probe lithography and dry etching

Thermal scanning probe lithography is an emerging nanofabrication technique for rapid prototyping of arbitrary topographies in thermally sensitive resist. This feature, paired to the recent advances in dry plasma etching techniques, allows the fabrication of high-resolution nanopatterns in hard substrates. Here, we investigate the key process parameters allowing the fabrication of high aspect ratio nanopatterns in silicon. By a combination of resist heat treatment, the use of a hard mask and optimized etch parameters during pattern transfer, we amplified the shallow resist patterns by a factor of 100 into the silicon substrate. Low surface roughness and vertical sidewalls are thereby maintained. We demonstrate the fabrication of 240nm wide lines and 4μm deep single crystal silicon patterns.

Shrinkage Control of Photoresist for Large‐Area Fabrication of Sub‐30 nm Periodic Nanocolumns

A method to fabricate large-area arrays of nanocolumns without a deep-UV laser source is reported. This method allows high-yield fabrication of 3 x 3 cm(2) arrays of sub-30 nm nanocolumns made of bottom antireflection layer coating (BARC) by combining displacement Talbot lithography (DTL) using a monochromatic UV beam (365 nm wavelength) with plasma etching techniques. DTL is used to manufacture an initial pattern of periodic photo-resist nanocolumns with a diameter of similar or equal to 110 nm. N-2 plasma can transfer this pattern at a 1: 1 ratio to BARC nanocolumns. It is found that reactive O-2/N-2 plasma etching on the other hand can shrink the BARC nanocolumns to sub-30 nm dimensions. The shrink-etching process can be reproducibly controlled by tuning the gas flow ratio and the etching time. It is highly remarkable that the verticality of these BARC nanocolumns remains during O-2/N-2 plasma shrink etching. Combining the etching of O-2/N-2 plasma with N-2 plasma allows to produce BARC nanocolumns over the entire diameter range from 110 to sub-30 nm. The fabrication approach enables large-footprint fabrication of size-tunable periodic nanostructures that have many potential applications in photonics, electronics, biosensors, smart surfaces, catalysis, and biomedical analysis

Shrinkage Control of Photoresist for Large‐Area Fabrication of Sub‐30 nm Periodic Nanocolumns

A method to fabricate large‐area arrays of nanocolumns without a deep‐UV laser source is reported. This method allows high‐yield fabrication of 3 × 3 cm2 arrays of sub‐30 nm nanocolumns made of bottom antireflection layer coating (BARC) by combining displacement Talbot lithography (DTL) using a monochromatic UV beam (365 nm wavelength) with plasma etching techniques. DTL is used to manufacture an initial pattern of periodic photoresist nanocolumns with a diameter of ≈110 nm. N2 plasma can transfer this pattern at a 1:1 ratio to BARC nanocolumns. It is found that reactive O2/N2 plasma etching on the other hand can shrink the BARC nanocolumns to sub‐30 nm dimensions. The shrink‐etching process can be reproducibly controlled by tuning the gas flow ratio and the etching time. It is highly remarkable that the verticality of these BARC nanocolumns remains during O2/N2 plasma shrink etching. Combining the etching of O2/N2 plasma with N2 plasma allows to produce BARC nanocolumns over the entire diameter range from 110 to sub‐30 nm. The fabrication approach enables large‐footprint fabrication of size‐tunable periodic nanostructures that have many potential applications in photonics, electronics, biosensors, smart surfaces, catalysis, and biomedical analysis.

Thin Layer Etching of Silicon Nitride: Comparison of Downstream Plasma, Liquid HF and Gaseous HF Processes for Selective Removal after Light Ion Implantation

For technology nodes beyond 14nm silicon nitride spacer etching has become a major challenge. Conventional plasma etching techniques based on CHF3/O2 cannot achieve thorough nitride removal on horizontal surfaces without inducing either CD loss or Si/SiGe source/drain recess. This leads to either gate leakage increase or poor raised source/drain epitaxy. To overcome atomic scale control issues faced with continuous plasma processes, several techniques aiming at achieving atomic layer etching or thin layer etching were recently described [1]. An original etching approach has been reported which consists in modifying the silicon nitride through H2 ion implantation by plasma (ICP or CCP) and then selectively removing the modified fraction of the layer thanks to chemical etching [2]. Layer modification depth is controlled thanks to plasma parameters (bias voltage and process time). This unconventional technique was demonstrated on 14nm FDSOI logic device and showed less than 1nm spacer CD loss, less than 0.6nm SiGe recess which enabled defect-free source/drain epitaxy [2]. Mechanisms for silicon nitride modifications and selective removal are discussed in this article by comparing downstream plasma, liquid-phase HF and gas-phase HF as removal techniques.

Development of a facile block copolymer method for creating hard mask patterns integrated into semiconductor manufacturing

Our goal is to develop a facile process to create patterns of inorganic oxides and metals on a substrate that can act as hard masks. These materials should have high etch contrast (compared to silicon) and so allow high-aspect-ratio, high-fidelity pattern transfer whilst being readily integrable in modern semiconductor fabrication (FAB friendly). Here, we show that ultra-small-dimension hard masks can be used to develop large areas of densely packed vertically and horizontally orientated Si nanowire arrays. The inorganic and metal hard masks (Ni, NiO, and ZnO) of different morphologies and dimensions were formed using microphase-separated polystyrene-b-poly(ethylene oxide) (PS-b-PEO) block copolymer (BCP) thin films by varying the BCP molecular weight, annealing temperature, and annealing solvent(s). The self-assembled polymer patterns were solvent-processed, and metal ions were included into chosen domains via a selective inclusion method. Inorganic oxide nanopatterns were subsequently developed using standard techniques. High-resolution transmission electron microscopy studies show that high-aspect-ratio pattern transfer could be affected by standard plasma etch techniques. The masking ability of the different materials was compared in order to create the highest quality uniform and smooth sidewall profiles of the Si nanowire arrays. Notably good performance of the metal mask was seen, and this could impact the use of these materials at small dimensions where conventional methods are severely limited.

Chlorine-based dry etching of β-Ga2O3

Reactive ion etching (RIE) and inductively coupled plasma (ICP) etching techniques were used to determine the optimal dry etch conditions for β-Ga2O3. RF power and chamber pressure were examined to study their effects on etch rate and surface roughness for three crystallographic planes, i.e., (100); (010); and ( by RIE. BCl3 etch rate calibrations were performed on all β-Ga2O3 planes studied, in comparison to Cl2. RIE yielded moderate etch rates (<20 nm min−1), and surface roughness showed no clear trend with RF power. Moreover, the effect of bias power, plasma power, and the choice of etchant were studied using ICP. The etches performed by ICP were shown to be superior to RIE in both etch rate and surface roughness, due to the much higher plasma densities and uniformities possible with plasma powers beyond those realized in RIE. The maximum etch rate of 43.0 nm min−1 was achieved using BCl3 in ICP. SF6/BCl3 mixtures, which yield high GaN etch rates, were also studied. However, in contrast to GaN etching, SF6/BCl3 was found to be far less effective than pure BCl3 in etching β-Ga2O3.

Fabrication of Thickness-Controllable Micropatterned Polyelectrolyte-Film/Nanoparticle Surfaces by Using the Plasma Oxidation Method.

We have demonstrated a novel way to form thickness-controllable polyelectrolyte-film/nanoparticle patterns by using a plasma etching technique to form, first, a patterned self-assembled monolayer surface, followed by layer-by-layer assembly of polyelectrolyte-films/nanoparticles. Octadecyltrimethoxysilane (ODS) and (3-aminopropyl)triethoxysilane (APTES) self-assembled monolayers (SAMs) were used for polyelectrolyte-film and nanoparticle patterning, respectively. The resolution of the proposed patterning method can easily reach approximately 2.5 μm. The height of the groove structure was tunable from approximately 2.5 to 150 nm. The suspended lipid membrane across the grooves was fabricated by incubating the patterned polyelectrolyte groove arrays in solutions of 1,2-dioleoyl-sn-glycero-3-phosphocholine (DOPC) giant unilamellar vesicles (GUVs). The method demonstrated here reveals a new path to create patterned 2D or 3D structures.

Comprehensive Study of SF6/O2 Plasma Etching for Mc-Silicon Solar Cells**Supported by the National Natural Science Foundation of China under Grant No 61306076, and the Youth Innovation Promotion of Chinese Academy under Grant No Y510411C31.

The mask-free SF6/O2 plasma etching technique is used to produce surface texturization of mc-silicon solar cells for efficient light trapping in this work. The SEM images and mc-silicon etching rate show the influence of plasma power, SF6/O2 flow ratios and etching time on textured surface. With the acidic-texturing samples as a reference, the reflection and IQE spectra are obtained under different experimental conditions. The IQE spectrum measurement shows an evident increase in the visible and infrared responses. By using the optimized plasma power, SF6/O2 flow ratios and etching time, the optimal efficiency of 15.7% on 50 × 50 mm2 reactive ion etching textured mc-silicon silicon solar cells is achieved, mostly due to the improvement in the short-circuit current density. The corresponding open-circuit voltage, short-circuit current density and fill factor are 611 mV, 33.6 mA/cm2, 76.5%, respectively. It is believed that such a low-cost and high-performance texturization process is promising for large-scale industrial silicon solar cell manufacturing.

Atomic-layer soft plasma etching of MoS2.

Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (<0.4 eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS2 layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO2 substrate and the remaining MoS2 layers. The etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications.

A Notched Long-Period Fiber Grating Magnetic Field Sensor Based on Nanoparticle Magnetic Fluid

In this paper, we propose using an inductively coupled plasma (ICP) etching technique to fabricate a notched long-period fiber grating (NLPFG) for magnetic sensing application. An optical fiber magnetic field sensor based on NLPFG filled with nanoparticle magnetic fluid is proposed and demonstrated. The magnetic fluid nanoparticles were attached on the grating structure section and used as a magneto-optical sensing layer to measure magnetic flux density. The external applied magnetic flux density ranged from 0 to 27.74 mT. As the magnetic flux density was increased, the spectra of the NLPFG were changed. The resonant wavelength of the attenuation band did not shift obviously, but the transmission loss of the resonant dip was increased by 3.48 dB from −19.41 dB to −15.93 dB. The experimental results indicated that the sensitivity of the sensor is approximately 0.125 dB/mT.

The study of FTO surface texturing fabrication using Argon plasma etching technique for DSSC applications

This paper is aimed to investigate the fabrication of the fluorine-doped tin oxide (FTO) texturing by using Argon (Ar) plasma etching. The pressure and temperature of Ar gas during plasma etching were 1.6 mbar and 240-285oC, respectively. The plasma etching time was varied from 3 and 10 min. We also prepared without etching samples as reference. UV-Vis spectrophotometer showed that the transmittances of etching samples are higher than the without etching samples. The root mean square roughness (Rq) of etching samples are lower than the without etching samples. It is considered that the Ar ions bombardment can modify the FTO surfaces. However, the etching time does not significantly affect the FTO surfaces for 3 min and 10 min. The Rq of the without etching sample, the etching sample for 3 min, and the etching sample for 10 min are 11.697 nm, 9.859 nm, and 9.777 nm, respectively. These results are good agreement with the four point probe measurement that indicated that the sheet resistance (RS) for each the without sample, the etching sample for 3 min, and the etching sample for 10 min are 16.817 Ωsq, 16.067 Ω/sq, and 15.990 Ω/sq. In addition, the optical transmittance of the etching sample for 3 min and the etching sample for 10 min at wavelengths of 350 - 850 nm are almost similar. This is evidence that the etching time below 10 min cannot significantly change the morphology, optical and electrical properties.

The morphologies and optical properties of three-dimensional GaN nano-cone arrays

Three-dimensional GaN nanostructures with well-aligned nano-cones were fabricated via laser interference lithography + inductively coupled plasma etching techniques.

Fabrication of Slanted Cu Nanopillars with Uniform Arrays

Slanted Cu nanopillars with uniform arrays were fabricated using slanted Si channel structures as templates. A slanted plasma etching technique was employed, utilizing a Faraday cage system for the formation of these slanted channel structures. The angle of the slanted channel structures was accurately controlled because ions entering the Faraday cage maintained their direction. After the slanted channel structures were formed, they were filled with Cu by electroless deposition. Chemical mechanical polishing was then used to remove the excess Cu film and the SiO2 masks. Finally, the remaining poly Si of the channel structures was removed by wet chemical etching. This work offers a novel method for the fabrication of slanted metal nanostructures with uniform arrays covering a large area.

나노 반도체 소자를 위한 펄스 플라즈마 식각 기술

As the size of the semiconductor devices shrinks to nanometer scale, the importance of plasma etching process to the fabrication of nanometer scale semiconductor devices is increasing further and further. But for the nanoscale devices, conventional plasma etching technique is extremely difficult to meet the requirement of the device fabrication, therefore, other etching techniques such as use of multi frequency plasma, source/bias/gas pulsing, etc. are investigated to meet the etching target. Until today, various pulsing techniques including pulsed plasma source and/or pulse-biased plasma etching have been tested on various materials. In this review, the experimental/theoretical studies of pulsed plasmas during the nanoscale plasma etching on etch profile, etch selectivity, uniformity, etc. have been summarized. Especially, the researches of pulsed plasma on the etching of silicon, <TEX>$SiO_2$</TEX>, and magnetic materials in the semiconductor industry for further device scaling have been discussed. Those results demonstrated the importance of pulse plasma on the pattern control for achieving the best performance. Although some of the pulsing mechanism is not well established, it is believed that this review will give a certain understanding on the pulsed plasma techniques.