PL Band Research Articles

Visible-light-assisted peroxymonosulfate activation using MIL-88A(Fe)/BiOI heterojunction composite to drive charge transport for eliminating acid red 18

A novel rod-shaped MIL-88A(Fe)/BiOI heterojunction composite is fabricated by an in-suit chemical deposition method for visible-light-assisted peroxymonosulfate activation to eliminate AR18 (acid red 18). A series of x%MIL-88A(Fe)/BiOI are obtained according to the mass ratio of MIL-88A(Fe) to BiOI. Among them, 30 %MIL-88A(Fe)/BiOI could remove 97.79 % AR18 within 40 minutes. The reaction parameters on this process are investigated, such as PMS concentration, catalyst dosage, initial pH and dye concentration. The optimal conditions are determined to be [catalyst]= 1 g·L−1, [PMS]=1 mM, pH=7.02. The scavenging experiments and EPR analysis manifest that 1O2 is the main active species for AR18 degradation. In accordance with the band structure, active species, XPS, PL, EIS and photocurrent response, the Z-scheme electron transfer path of the composite catalyst is proved under 500 W (λ > 420 nm) Xenon lamp irradiation. In the end, the stability and universality of the composite catalyst in practical application are evaluated by three cyclic tests and inorganic anion experiments. This work provides valuable guidance for synthesizing efficient and stable MOF based heterojunction photocatalysts.

Exploring Bismuth Oxide Supported Kaolinite for Photocatalytic Application

Bismuth oxide (Bi2O3) and Bi2O3–supported Kaolin were synthesized using household microwave–assisted methods (350 W, 5 min), with catalyst characteristics analyzed. XRD patterns confirmed the monoclinic structure of Bi2O3. Incorporating 20%w/w Kaolin increased the specific surface area of Bi2O3 from 6.2879 to 16.1345 m2/g, observed in FESEM images showing a hierarchical flower-like morphology resembling French fries alongside Kaolin plates. XRF analysis identified elements in Kaolin contributing to self–doping in band structure of Bi2O3, reducing its band gap and PL intensity. Kaolin/Bi2O3 composites demonstrated enhanced photocatalytic degradation of tetracycline (TC) under visible light, attributed to Bi2O3-generated radicals and increased surface area. The composite photocatalyst can be recycled up to three times. This research not only enhances the photocatalytic activity of Bi2O3 but also increases the value of a local waste material, Kaolin clay. Such enhancements could potentially extend to other metal oxides and abundant waste materials within the country.

Investigations on structure and optical properties of neutron irradiated nanocrystalline La2Zr2O7 pyrochlores

This research work investigates the response of nanocrystalline lanthanum zirconium oxide (LZO) under neutron irradiation, emphasizing grain size-dependent structural stability. LZO samples were synthesized with the chemical precipitation method and the LZO pellets were annealed at two different temperatures (1200 °C and 1400 °C) to obtain two different grain size samples, namely LZO-1200 and LZO-1400. The samples were exposed to neutrons at different doses (ranging from 1.63 × 1012 n/cm2 to 5.68 × 1014 n/cm2) and the effects were studied with X-ray diffraction, scanning electron microscopy, Raman scattering and optical characterization. The structural characterization results reveal that, the grain size and strain are significantly modified in LZO-1400 samples, and such changes are absent inLZO-1200 samples. The band gap and photoluminescence intensity are reduced significantly in LZO-1400 samples, however, this effect is not observed in LZO-1200 samples. The experimental results reveal that in LZO-1200 samples, the grain boundaries act as a sink for irradiation-induced defects and there is no significant change in the grain size, strain and band gap. However, in the case of the LZO-1400 sample, the grain size is larger than the cascades induced by primary knock-on atoms (PKAs) and it results in disorder-driven fast grain growth and changes in band gap and PL intensity. The LZO-1200 samples with small grain sizes are radiation resistant.

Nutrient transformations based on sampling scheme and cropping system following subsurface‐banded poultry litter

AbstractPoultry litter (PL) is an excellent source of micro‐ and macronutrients. However, surface applications result in greater nutrient runoff and nitrogen loss via ammonia volatilization. Subsurface banding PL is a promising technology for combating these challenges, but scant information exists on proper soil sampling techniques and management recommendations for subsurface‐applied PL. Therefore, objectives were to quantify the nutrient status based on sampling depth (0–15 cm and 15–30 cm) and schema (systematic [0, 3, 7, and 10 cm from PL bands] and composite) to develop subsurface PL recommendations per system (annual cropping and perennial pasture). Soil samples were collected during PL application (subsurface and surface) and 1, 6, 12, 18, and 24 months thereafter. On average, total N, Mehlich‐3 extractable P, and Mehlich‐3 extractable K were 15%, 96%, and 72% greater, respectively, for subsurface compared to surface applications. Further, Mehlich‐3 and water‐soluble P at the 0‐ to 15‐cm depth were 4–5 and 2–3 times greater in soils receiving subsurface PL in perennial pasture and row crop systems, respectively, compared to surface applications, likely owing to lesser nutrient losses to the air, soil, and water under subsurface PL systems. Compared to surface applications, subsurface PL increased (p < 0.05) N, P, and K crop removal by 75%, 70%, and 72%, respectively, and resulted in 80% and 78% yield increases and N‐use efficiency, respectively. Consequently, subsurface PL conserved greater N, P, and K at the 0‐ to 15‐cm depth, thus increasing nutrient‐use efficiency in row crop systems and improving water quality in sensitive watersheds.

Peculiarities of the Fluorescence Quenching in the ATP – Calix[4]arene C-107 Aqueous Solutions

The nature of fluorescence (FL) quenching for the aqueous solutions of adenosine triphosphate (ATP) with calix[4]arenes C-107 in the presence of silver nitrate AgNO3 is studied. It is shown that, for the water solutions of ATP and calix[4]arenes C-107 at a constant concentration of ATP molecules with an increase in the content of C-107, a complex nature of the PL quenching is observed, while maintaining the position of the PL band near 395 nm (λex = 285 nm). Its complexity is based, on the one hand, in the wide range of concentrations of C-107, at which it occurs, and, on the other hand, there are gaps in the quenching values for individual concentrations of calix[4]arene, near which it changes slightly. The indicated nature of the PL quenching significantly depends on the wavelength of excitation and the temperature. Similar quenching behavior is preserved, when AgNO3s alts are added to the ATP–C-107 mixtures, (CATP = CC-107 = 1 × 10−4M) in the concentration range from 1 × 10−4M to 1 × 10−3M. The computer modeling shows that the system ATP–C-107 can form energetically stable complexes, when ATP is located on the top of the calix[4]arene and along the wall of it due to π-π-stacking interaction, and the complexes are characterized by a shrinking of the energy bands.

Single‐Layer Carbon Nitride as an Efficient Metal‐Free Organic Electron‐Transport Material with a Tunable Work Function

AbstractSingle‐layer carbon nitride (SLCN) is introduced as a metal‐free organic electron transport material (ETL) for organic solar cells, delivering a performance comparable to that of the benchmark nanocrystalline ZnO. SLCN is produced in the form of stable aqueous inks and can serve as an efficient electron transport layer for three different types of active layers, showing high stability to photodegradation. A lower conductivity of SLCN films as compared to ZnO is counter‐balanced by their higher transparency and lower light scattering losses. The SLCN ETL provides a unique opportunity to tune the work function from ca. −4.1 to −4.6 eV by varying the annealing temperature due to partial thermal oxidation of the SLCN film. The PL band position follows the oxidation‐induced changes of the work function allowing PL properties of SLCN to be used to predict the PV efficiency. The 2D structure of SLCN coupled with unique structural and compositional variability, and tunability of the work function show a high promise for emerging organic PV devices.

Spacing of subsurface poultry litter bands: Influence on maize performance and nitrogen use efficiency

AbstractPoultry litter (PL) is traditionally surface broadcast to no‐till maize (Zea mays L.). PL is nutrient‐dense, and surface‐applied PL nitrogen (N) is vulnerable to losses to the atmosphere and water systems. An application method was developed by USDA‐ARS scientists for shallow subsurface banding PL to reduce ammonia (NH3) volatilization and surface runoff. There is limited information on how this application method will affect conservation and nutrient accessibility in no‐till maize. The objectives were to determine if adjusting PL lateral subsurface band placement in relation to maize rows affects nutrient use and maize yields. Treatments were a nontreated control (NTC), urea ammonium nitrate surface banded (Fert), poultry litter surface broadcast (PLBr), and three subsurface banded PL treatments. The subsurface PL treatments were one (PLSub1), two (PLSub2), or three (PLSub3) bands between maize rows. Treatments receiving N were applied at 180 kg total N ha−1. Nitrogen concentration in V4 aboveground dry matter was higher in PLSub1 than PLSub2. Aboveground dry matter yields for all PLSub treatments were greater than PLBr and comparable to Fert. The PLSub1 and PLSub2 treatments resulted in maize grain yields equivalent to Fert and greater than PLBr and NTC when averaged across years. Few differences were observed in postharvest soil sample nutrient concentrations between PLSub treatments. These results suggest that subsurface banding PL can conserve N and increase no‐till maize yield over traditional surface broadcast PL; however, increasing the frequency of subsurface PL bands did not clearly affect nutrient conservation or accessibility to the maize.

Composition and Surface Optical Properties of GaSe:Eu Crystals before and after Heat Treatment.

This work studies the technological preparation conditions, morphology, structural characteristics and elemental composition, and optical and photoluminescent properties of GaSe single crystals and Eu-doped β-Ga2O3 nanoformations on ε-GaSe:Eu single crystal substrate, obtained by heat treatment at 750-900 °C, with a duration from 30 min to 12 h, in water vapor-enriched atmosphere, of GaSe plates doped with 0.02-3.00 at. % Eu. The defects on the (0001) surface of GaSe:Eu plates serve as nucleation centers of β-Ga2O3:Eu crystallites. For 0.02 at. % Eu doping, the fundamental absorption edge of GaSe:Eu crystals at room temperature is formed by n = 1 direct excitons, while at 3.00 at. % doping, Eu completely shields the electron-hole bonds. The band gap of nanostructured β-Ga2O3:Eu layer, determined from diffuse reflectance spectra, depends on the dopant concentration and ranges from 4.64 eV to 4.87 eV, for 3.00 and 0.05 at. % doping, respectively. At 0.02 at. % doping level, the PL spectrum of ε-GaSe:Eu single crystals consists of the n = 1 exciton band, together with the impurity band with a maximum intensity at 800 nm. Fabry-Perrot cavities with a width of 9.3 μm are formed in these single crystals, which determine the interference structure of the impurity PL band. At 1.00-3.00 at. % Eu concentrations, the PL spectra of GaSe:Eu single crystals and β-Ga2O3:Eu nanowire/nanolamellae layers are determined by electronic transitions of Eu2+ and Eu3+ ions.

Structural and photoluminescence properties of green synthesized ZnO nanoparticles from Calotropis gigantea leaves

This study explores the properties of ZnO nanoparticles produced using a green method involving Calotropis gigantea leaves. The nanoparticles were created by extracting materials from the plant leaves and then subjected to annealing at 350 °C in an air environment for crystallization. X-ray diffraction results represent the formation of pure hexagonal ZnO with an average crystallite size of 48–51 nm. Fourier Transform Infrared spectroscopy also confirms the synthesis of hexagonal ZnO NP as evident from a sharp band observed at 524.55 cm−1 in IR spectra. Energy dispersive X-ray spectroscopy results reveal nucleation of pure ZnO. Photoluminescence emission results revealed that PL bands observed at wavelengths of 399.93 nm and 469 nm in the near UV to violet and blue regions, respectively, demonstrating their potential applications in optoelectronics. Color chromaticity coordinates diagram reveal that color coordinates presence in the blue region. This demonstrate that synthesized ZnO has high purity and hold promise materials using for blue LED and also use as biomaterials with antibacterial properties. Additionally, a detailed exploration of mechanisms is discussed.

Preparation and characterization of SbSeI thin films

Metal chalcohalides are promising candidates for next-generation technologies that include energy conversion, information storage, and quantum computing. Among them, antimony selenoiodide (SbSeI) has received rising interest for different optoelectronic devices, including photovoltaics, due to its bandgap energy, strong optical absorption, stability, and earth abundant, low-cost, and low toxicity constituents. In this work, SbSeI thin films were prepared through a two-step process. At first, antimony selenide (Sb2Se3) thin films were deposited at 300 °C (Sb2Se3-300) and at room temperature (Sb2Se3-RT) onto molybdenum covered soda-lime glass substrates by a magnetron sputtering method. The formation of SbSeI thin films was performed by isothermally annealing the as-deposited Sb2Se3 thin films in sealed quartz ampoules in the atmosphere of antimony iodide (SbI3) with the presence of 100 Torr of argon pressure. The influence of the annealing temperature and time during the iodization of different types of substrates on the morphology and composition of SbSeI thin films was investigated. The well-oriented and dense single-phase SbSeI thin films with stoichiometric composition and single-crystal micro-columnar structures were achieved by annealing Sb2Se3-RT in SbI3 atmosphere at 250 °C for 5 min under 100 Torr of Ar pressure. The room temperature photoluminescence (RT-PL) of SbSeI exhibited a broad asymmetric PL band with a maximum at 1.67 eV. The low-temperature (T = 8 K) PL study of SbSeI showed a broad and asymmetric PL band at 1.4 eV, being quite distant from the bandgap. This PL band at 1.4 eV with obtained small thermal quenching activation energy of 12.7 meV is proposed to originate from the deep donor-deep acceptor pair (DD-DA) recombination.

Effects of parabolic barrier design for multiple GaAsBi/AlGaAs quantum well structures

The results of a comparative study on how the design of multiple quantum structures containing a parabolic barrier profile affects optical properties are presented. All quantum well (QW) structures were grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates. The investigated samples consisted of (i) double parabolic quantum wells (type A) or (ii) multiple (two or three) rectangular quantum wells surrounded by parabolic barriers (type B). The optical quality of samples was characterized performing room-temperature (RT-PL) and temperaturedependent photoluminescence (TD-PL) measurements. The investigation aimed at the optimization of a multiple quantum well (MQW) structure design for application in the gain region of near infrared (NIR) laser diodes (LDs) revealed benefits of both double parabolic quantum wells and a mixed design (rectangular MQW with parabolic barriers). The PL band position for all samples was registered in the vicinity around 1.19 eV, which corresponds to the Bi content in QW of ~4.4%. It was shown that all structures of type A exhibit an intense emission, while the intensity of photoluminescence measured for the samples of type B depends on the number of QWs. The weaker intensity of the PL signal from two QWs inserted between parabolic barriers was explained by a larger point defect density at low temperature grown inner GaAs barriers. The room-temperature PL intensity of the structure with three GaAsBi QWs embedded in one parabolic AlGaAs barrier was the highest one. The shift of PL peak position to lower energies (1.16 eV) was attributed to the slightly higher bismuth concentration, 4.9%.

Properties of Erbium-Doped Silicon Oxycarbide Thin Films

This research paper presents findings on the properties of erbium ions incorporated within an amorphous silicon oxycarbide host matrix. A special analysis is made on photoluminescence emission. The experimental samples were prepared using tetraethoxysilane and erbium oxide as reagents via Catalytic chemical vapor deposition. Notably, a unique preparation method was employed for thin films obtention, avoiding plasma damage, which had not been utilized for this purpose previously. One of the most important accomplishments of this study consists in achieving a broad band PL emission centered at 580 nm, which is attributed to the incorporation of erbium ions into a silicon oxycarbide matrix. The obtained results indicate a direct correlation between the photoluminescence emission evolution and the presence of erbium oxide used during the deposition process. The observed photoluminescence emission is attributed to the formation of erbium-silica-based complexes that facilitate energy transfer to the erbium ions. This research opens new possibilities in areas such as optoelectronics, sensing, and telecommunications. The findings obtained have numerous potential applications, particularly in advancing the design of LEDs, lasers, and waveguides.

Enhanced reddish-orange luminescence from Sm3+/Ag co-doped barium zinc borophosphate glasses: Structural and Judd-Ofelt analysis

We report the synthesis and optical response of Sm3+/Ag nanoparticles (NPs) co-doped glasses through melt quenching method. TEM analysis confirmed Ag NP formation, and the diverse functional groups were confirmed through FTIR studies. The Judd-Ofelt (JO) parameters are calculated using JO theory from absorption spectra. The PL spectra were recorded under 402 nm excitation and they show four PL bands in the visible range. The PL spectra are utilized to obtain radiative parameters to claim their utility in visible laser applications. The dominant emission color was obtained by using the CIE color chromaticity diagram. The excited state lifetime values were estimated through decay curve fitting method. All the obtained results are discussed in detail based on Ag NP concentrations.

Rational construction of visible-light-driven MIL-88A(Fe)@PMo12 heterojunction with S-scheme electron transfer pathway to activate peroxymonosulfate for degradation of organic pollutants

Coupling of photocatalysis and persulfate oxidation is a promising approach to remove refractory organic pollutants. In 2022, there are about 30 publications on this topic, and the frequency of citations for related articles has reached 1,100. But the rational design and engineering of a desirable photocatalyst is still a great challenge. Herein, a S-scheme heterojunction photocatalyst was prepared by incorporation of Keggin phosphomolybdic acid (PMo12) into MIL-88A(Fe) through a one-step hydrothermal method. The prepared catalyst was characterized by several techniques, and used as visible-light-driven photocatalyst to activate peroxymonosulfate for the degradation of pollutants. The optimal photocatalyst (MIL-88A(Fe)@PMo12-30) displayed the outstanding catalytic activity and good stability. In MIL-88A(Fe)@PMo12-30 system, the degradation rate of AR18 could be increased by 20.55 times compared pristine MIL-88A(Fe). PMS concentration, catalyst dosage, initial pH value, and dye concentration influenced AR18 degradation. The scavenging experiments and EPR analysis disclosed that reactive species (RSs), including SO4−, OH, O2−, h+, and 1O2 were generated. Basis on the band structure, reactive species, PL and electrochemical analysis, the enhanced photocatalytic performance of MIL-88A(Fe)@PMo12-30 was mainly ascribed to the intimate contact of both component and unusual S-scheme electron transfer path. This work may open new horizons to construct efficient POMOFs hybrid photocatalysts.

Electrochemical performance of Yttrium doped SnO2–NiO nanocomposite for energy storage applications

Nickel Oxide, Yttrium doped SnO2 and Y:SnO2–NiO nanocomposite were prepared by facile chemical precipitation approach. The XRD investigates the crystallite size, structure and lattice parameters. The morphology of samples and confirm the interplanar spacing of 0.34 nm (1 1 0) for SnO2 and 0.24 nm (1 1 1) for NiO were studied by using HRTEM. The present of elements and oxidation states have been analyzed by FT-IR and XPS. UV–visible spectrum exhibit the red shift in energy band gap and PL spectra show the enhanced intensity of blue emission. VSM exhibit the ferromagnetism at room temperature for Y:SnO2–NiO nanocomposite. Electrochemical behaviors were investigated by EIS at room temperature. The CV curves shows pseudo capacitive nature due to quasi rectangular shape was obtained. The synthesized nanocomposite has good electrochemical performance, optical and magnetic properties and it can be suitable material for energy storage applications.

Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces.

Gallium nitride is a wide-direct-bandgap semiconductor suitable for the creation of modern optoelectronic devices and radiation tolerant detectors. However, formation of dislocations is inevitable in MOCVD GaN materials. Dislocations serve as accumulators of point defects within space charge regions covering cores of dislocations. Space charge regions also may act as local volumes of enhanced non-radiative recombination, deteriorating the photoluminescence efficiency. Surface etching has appeared to be an efficient means to increase the photoluminescence yield from MOCVD GaN materials. This work aimed to improve the scintillation characteristics of MOCVD GaN by a wet etching method. An additional blue photo-luminescence (B-PL) band peaking at 2.7-2.9 eV and related to dislocations was discovered. This B-PL band intensity appeared to be dependent on wet etching exposure. The intensity of the B-PL was considerably enhanced when recorded at rather low temperatures. This finding resembles PL thermal quenching of B-PL centers. The mechanisms of scintillation intensity and spectrum variations were examined by coordinating the complementary photo-ionization and PL spectroscopy techniques. Analysis of dislocation etch pits was additionally performed by scanning techniques, such as confocal and atomic force microscopy. It was proved that this blue luminescence band, which peaked at 2.7-2.9 eV, is related to point defects those decorate dislocation cores. It was shown that the intensity of this blue PL band was increased due to enhancement of light extraction efficiency, dependent on the surface area of either single etch-pit or total etched crystal surface.

Effects of peripheral ring fluorination on the photophysical properties of hexaarylbenzenes

Hexaarylbenzenes (HABs) exhibit interesting photophysical properties that originate from the through-space charge-transfer interactions between their six twisted peripheral aromatic rings. Although the introduction of fluorine atoms into π-conjugated structures allows one to effectively control their electron density distribution and aggregation behavior, the effects of peripheral ring fluorination on HAB properties remain underexplored. This paper describes the syntheses and photophysical properties of three unsymmetrical HABs and their symmetrical regioisomers, namely compounds belonging to 0F (no fluorine atoms on the short molecular axes of the peripheral aromatic rings), 4F (four fluorine atoms as substituents on the short molecular axes of the aromatic rings with CF3 end groups), and 8F series (four fluorine atoms on the short molecular axes of each of the peripheral aromatic rings). All the HABs exhibited blue photoluminescence both in solution and in crystalline form. Molecules in the 4F series exhibited an increase in their Stokes shift with increasing solvent polarity and featured superior intramolecular charge-transfer properties, which produced a significant redshift of the PL band of the unsymmetrical molecule compared to that of its symmetrical counterpart. It is noteworthy that the 4F series exhibited photochromic behavior, that is, an additional absorption band in the longer-wavelength region was observed upon irradiating it with 280-nm UV light, and consequently the colorless solution acquired a yellow color . Thus, the partial fluorination of the HAB scaffold (4F series) produced photochromic behavior, while its other photophysical properties were preserved.

Lead-Free Cesium Manganese Halide Nanocrystals Embedded Glasses for X-Ray Imaging.

The toxicity of heavy-metal Pb and instability of lead-based halide perovskite nanomaterials are main factors to impede their practical applications in the fields of solar cells, LEDs and scintillators. In this paper, all inorganic lead-free cesium manganese halidenanocrystals are synthesized in glass for the first time. Red photoluminescence with broad PL band, negligible self-absorption and a high photoluminescence quantum yield of 41.8% is obtained. In addition, modulating halide component can change the Mn2+ ions coordination environment to obtain tunable photoluminescence from red to green. More importantly, cesium manganese halidenanocrystals embedded glasses exhibit outstanding long-term stabilities. Theses cesium manganese halide nanocrystals embedded glasses are also highly stable against high energy irradiation and exhibit highly efficient radioluminescence, making them promising for high-resolution X-ray imaging. These results demonstrate that cesium manganese halide nanocrystals embedded glasses are promising eco-friendly candidates for applications in light-emitting diodes and scintillators.

Emission Variation of InAs Quantum Dots within (Al)GaInAs Quantum Wells in AlGaAs/GaAs Structures vs Quantum Well Compositions

The parameters of quantum dots (QDs) of InAs inserted in Al0.30Ga0.70As/GaAs hetero structures with additional cap/buffer AlGaInAs quantum wells (QWs) of different compositions have been investigated by photoluminescence, transmission electron microscopy and high-resolution X-ray diffraction methods. QD structures with the buffer layers: In0.15Ga0.85As (#1) or In0.25Ga0.75As (#2) and covering (cap) layers: Al0.10In0.15Ga0.75As (#1) or Al0.40In0.15Ga0.45As (#2), are compared. Structure #1 is characterized by a higher density of QDs, high QD emission intensity and a smaller full width at half maximum of the PL bands, compared to #2. The dependence of the intensity of QD emission against temperatures of 10–500 K has been studied. Significant thermal quenching of the PL intensity was revealed in #1 compared to #2. HR-XRD investigation has confirmed that QD structures are of perfect crystalline quality with sharp QW interfaces and a high number of Pendellösung peaks were detected. To fit the HR-XRD scans, the X′Pert Epitaxy software has been applied. The peculiarities of the QD emission and the parameters of the HR-XRD scans are compared, as well as the advances of the QD structures studied are discussed.

Far-red-emitting Mn4+-doped Ca2GdZr2Al3O12 phosphors for growing indoor plants

Pc-LEDs (phosphor-converted light-emitting diodes) are a relatively new generation of light sources frequently used for room lighting, backlighting, and plant development on account of numerous advantages, such as compactness, good stability, low energy consumption, and environmental friendliness. However, the absence of red-light emission limits the practical application of pc-LEDs. For example, pc-LEDs have a high correlated color temperature and a low rendering index. Here, a group of far-red emitting Mn4+-doped Ca2GdZr2Al3O12 (CGZA: Mn4+) phosphors was effectively synthesized using a solid-state reaction technique at 1450 °C. The phase purity, morphology, and fluorescence properties of prepared phosphors were investigated using XRD, SEM, PL/PLE, and fluorescence decay analysis, respectively. Under a 344-nm excitation, CGZA: Mn4+ emitted high-purity far-red light with a peak at approximately 702 nm. Phosphor quenching was observed once the Mn4+ concentration reached 0.3 mol%. The concentration quenching mechanism of Mn4+in the CGZA matrix resulted from electric dipole-dipole interactions. An important result was that the PL band was well superposed on the absorption bands of phytochromes Pr and Pfr. The PL intensity was 50% of the initial value at 373 K. These experimental results demonstrated the board application potential of the prepared phosphors for plant breeding.