Piezoelectric Strain Research Articles

Tunable d33/d33* for MPB (Ba0.85Ca0.15) (Zr0.1Ti0.9)O3 lead-free piezoceramic by crystallographic texturing approach

The morphotropic phase boundary (MPB) Ba0.85Ca0.15Zr0.10Ti0.90O3 composition is successfully transferred into <001>-textured ceramic having Lotgering factor f-74 % (abbreviated as BCZT-T74) using high aspect ratio BaTiO3-template particles via templated grain growth (TGG) method. The microstructural aspects reveal the distinctive grain growth formation for non-textured (BCZT-NT) and textured (BCZT-T74) ceramics; confirming the proper grain growth formation for textured ceramics. The polarization behavior was tested at 1 Hz, 5 Hz, and 10 Hz electric field frequencies by applying a voltage bias of 1000 V; the BCZT-NT ceramics show more variation in remnant polarization (Pr) as well as maximum polarization (Pmax) peak position while BCZT-T74 ceramics exhibit nearly steady values. The frequency-dependent variation in Pr (i.e. ΔPr) for non-textured and textured BCZT ceramics is ±11.08 % and ±3.25 % respectively in the frequency range 1Hz–10Hz at an applied voltage bias of 1000 V. The bipolar strain-electric field (S-E) butterfly loop evidences the typical piezoelectric nature; for both non-textured and textured BCZT ceramics having the effective piezoelectric strain coefficient d33* of 576 pm/V and 657 pm/V respectively. The BCZT-NT and BCZT-T74 ceramics revealed the average positive strain % values of 0.063 % and 0.1123 % and negative strain % values of 0.003985 % and 0.02281 % respectively at the applied voltage 1000 V functioning at 1Hz. The enhancement in negative strain% for BCZT-T74 ceramics is > 5.70 times higher than BCZT-NT ceramics. The variation in positive strain (i.e. ΔS+ve) and variation in negative strain (i.e. ΔS-ve) for non-textured ceramics is ±11.74 % and ±67.34 %, however, for textured ceramics is only ±3.33 % and ±5.00 % respectively. The BCZT-NT and BCZT-T74 ceramics exhibit the piezoelectric charge coefficient (d33) of 370 pC/N and 520 pC/N (1.4 times that of BCZT-NT ceramics) respectively. The electrostrictive coefficient (Q33) of BCZT-T74 ceramics is 0.039 m4/C2, which is > 2 times higher than BCZT-NT ceramics as well as commercially used toxic PZT-5H ceramics. Therefore, less variation in a strain, as well as polarization nature with varying frequencies and enhancement in piezo properties, suggests the present textured MPB BCZT-T74 ceramics is a promising candidate for piezoelectric devices functioning at the wide range of applied electric field frequencies.

Characterization of In‐Plane Piezoelectric Strain of Ferroelectric Thin Films by the Magnetoelectric Coupling Effect

Piezoelectric response of the ferroelectric/piezoelectric thin films is crucial for actuation of micro‐electromechanical systems (MEMS) devices as well as strain‐mediated electronic devices. Among many piezoelectric modes, longitudinal and transverse piezostrain is the most widely used. Various methods have been well established for quantitative characterization of the longitudinal piezostrain, such as laser interferometer and piezoelectric force microscopy. However, it is still a great challenge to characterize transverse piezostrain. Herein, a new method is established to characterize the transverse (in‐plane) piezostrain of ferroelectric/piezoelectric thin films by the inverse magnetoelectric (ME) coupling effect. A ferromagnetic thin film is patterned onto the ferroelectric thin film to form an artificial multiferroic heterostructure. The transverse piezostrain can transfer from the ferroelectric layer to the ferromagnetic layer and shift its ferromagnetic resonance field through the ME coupling effect. By comparing with a control sample of “bulk piezoceramic/ferromagnetic thin film” whose in‐plane piezostrain can be easily measured, the in‐plane piezostrain and piezoelectric coefficient of the ferroelectric thin films are then estimated. The in‐plane piezoelectric coefficient d31 and piezoelectric strain S31 of Pb(Zr,Ti)O3 (PZT) thin films are measured by this method. This new method will promote to fully understand the piezoelectric properties of the ferroelectric/piezoelectric thin films.

Phase Formation Mechanism and Piezoelectric Behaviour of NaNbO3 Ceramic

The solid state reaction route is adopted to synthesize NaNbO3 with the aim to examine their structural, morphological and electrical behaviour of material with sintering time. The crystal phase is formed without any secondary phase at calcination temperature 800 °C. The article shows the scope of material to be used as a sensor in piezoelectric applications. The synthesized material has been avoided to heat for longer time and has been sintered at 2 h, 4 h and 6 h. The refinement of experimental X-ray diffraction pattern displays crystallization of material in Orthorhombic phase with space group Pbcm and lattice parameters a = 5.513752 Å, b = 5.568852 Å, c = 15.52854 Å, α = β = γ = 90°. A gaussian distribution of grain size with statistical average 0.722 μm, 0.841 μm and 0.842 μm has been observed for NN02, NN04 and NN06 respectively. The NN04 shows maximum piezoelectric coefficient d33* = 110 pm V−1, piezoelectric strain 0.0021% and smallest as asymmetric factor Ys = 0.204 with respect to other investigated samples.

Advances in P(VDF-TrFE) Composites: A Methodical Review on Enhanced Properties and Emerging Electronics Applications

Piezoelectric polymers are a class of material that belong to carbon–hydrogen-based organic materials with a long polymer chain. They fill the void where single crystals and ceramics fail to perform. This characteristic of piezoelectric polymers made them unique. Their piezoelectric stress constant is higher than ceramics and the piezoelectric strain is lower compared to ceramics. This study’s goal is to present the most recent information on poly(vinylidene fluoride) with trifluoroethylene P(VDF-TrFE), a major copolymer of poly(vinylidene fluoride) PVDF with piezoelectric, pyroelectric, and ferroelectric characteristics. The fabrication of P(VDF-TrFE) composites and their usage in a variety of applications, including in actuators, transducers, generators, and energy harvesting, are the primary topics of this work. The report provides an analysis of how the addition of fillers improves some of the features of P(VDF-TrFE). Commonly utilized polymer composite preparation techniques, including spinning, Langmuir–Blodgett (LB), solution casting, melt extrusion, and electrospinning are described, along with their effects on the pertinent characteristics of the polymer composite. A brief discussion on the literature related to different applications (such as bio-electronic devices, sensors and high energy-density piezoelectric generators, low mechanical damping, and easy voltage rectifiers of the polymer composite is also presented.

Investigations on electric properties and domain structures of Nd-doped 0.70Pb(Mg1/3Nb2/3)O3–0.30PbTiO3 relaxor ferroelectric ceramics with high piezoelectric properties

Although rare earth neodymium (Nd) doping is common in Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN–PT) single crystals, it is rarely reported in PMN–PT ceramics. To explore the effect of Nd doping on PMN–PT ceramics, PMN–30PT:xNd3+ (x = 0%, 1%, 2%, and 3%) relaxor ferroelectric ceramics were fabricated using a solid-state method via two-step sintering. An enhanced piezoelectric charge coefficient (d33) of ~870 pC/N and a high piezoelectric strain coefficient (d33⁎) of ~1025 pm/V were achieved for x = 2%. Through Rayleigh analysis of polarization–electric field (P–E) hysteresis loops under small electric fields, it was found that the dielectric property was mainly influenced by the intrinsic contribution (local lattice distortion). Furthermore, by investigating domain configurations, high piezoelectric properties were found to be associated with the domain size reduction and local structural heterogeneity. The results indicate that the PMN–30PT:xNd3+ ceramics is a promising material for electronic devices, and that rare earth Nd doping is an efficient strategy for improving the electronic performance of Pb-based relaxor ferroelectrics.

Self-Polarized P(VDF-TrFE)/Carbon Black Composite Piezoelectric Thin Film.

Self-polarized energy harvesting materials have seen increasing research interest in recent years owing to their simple fabrication method and versatile application potential. In this study, we systematically investigated self-polarized P(VDF-TrFE)/carbon black (CB) composite thin films synthesized on flexible substrates, with the CB content varying from 0 to 0.6 wt.% in P(VDF-TrFE). The presence of -OH functional groups on carbon black significantly enhances its crystallinity, dipolar orientation, and piezoelectric performance. Multiple characterization techniques were used to investigate the crystalline quality, chemical structure, and morphology of the composite P(VDF-TrFE)/CB films, which indicated no significant changes in these parameters. However, some increase in surface roughness was observed when the CB content increased. With the application of an external force, the piezoelectrically generated voltage was found to systematically increase with higher CB content, reaching a maximum value at 0.6 wt.%, after which the sample exhibited low resistance. The piezoelectric voltage produced by the unpoled 0.6 wt.% CB composite film significantly exceeded the unpoled pure P(VDF-TrFE) film when subjected to the same applied strain. Furthermore, it exhibited exceptional stability in the piezoelectric voltage over time, exceeding the output voltage of the poled pure P(VDF-TrFE) film. Notably, P(VDF_TrFE)/CB composite-based devices can be used in energy harvesting and piezoelectric strain sensing to monitor human motions, which has the potential to positively impact the field of smart wearable devices.

Electric field-controlled deterministic magnetization reversal in nanomagnet Fe3Si/PMN-PT multiferroic heterostructures

Pure electric field-controlled 180° magnetization switching plays a vital role in low-power magnetoelectric memory devices. Using micromagnetic simulation, we engineered a square-shaped epitaxial Fe3Si nanomagnet on a PMN-PT piezoelectric substrate to make the magnetic easy axis slightly deviate 18° from the piezostrain axis, aiming to break the symmetry of the magnetization distribution and achieve deterministic magnetization reversal paths. Under the coaction of a magnetic field and an electric field, the simulated magnetic hysteresis loops and magnetic domain patterns reveal a fourfold to twofold magnetic anisotropy transition and magnetization reversal paths. Stimulated by pure electric field-induced piezoelectric strain, deterministic 180° magnetization reversals are accomplished by the two successive clockwise 90° switching process. The results help to comprehend electrically regulated deterministic magnetization reversal and pave an avenue for designing multistate spintronics devices.

Chiral Two-Dimensional Hybrid Organic-Inorganic Perovskites for Piezoelectric Ultrasound Detection.

Hybrid organic-inorganic perovskites (HOIPs) have exhibited striking application potential in piezoelectric energy harvesting and sensing due to their high piezoelectricity, light weight, and solution processability. However, to date, the application of piezoelectric HOIPs in ultrasound detection has not yet been explored. Here, we report the synthesis of a pair of chiral two-dimensional piezoelectric HOIPs, R-(4-bromo-2-butylammonium)2PbBr4 and S-(4-bromo-2-butylammonium)2PbBr4 [R-(BrBA)2PbBr4 and S-(BrBA)2PbBr4], which show low mechanical strength and significant piezoelectric strain coefficients that are advantageous for mechanoelectrical energy conversion. Benefiting from these virtues, the R-(BrBA)2PbBr4@PBAT and S-(BrBA)2PbBr4@PBAT [PBAT = poly(butyleneadipate-co-terephthalate)] composite films show prominent underwater ultrasound detection performance with a transmission effectivity of 12.0% using a 10.0 MHz probe, comparable with that of a polyvinylidene fluoride (PVDF) device fabricated in the same conditions. Density functional theory calculations reveal that R-(BrBA)2PbBr4 and S-(BrBA)2PbBr4 have a beneficial acoustic impedance (5.07-6.76 MRayl) compatible with that of water (1.5 MRayl), which is responsible for the facile ultrasound-induced electricity generation. These encouraging results open up new possibilities for applying piezoelectric HOIPs in underwater ultrasound detection and imaging technologies.

Characterization of vertically aligned carbon nanotubes by piezoresponse force microscopy

The piezoelectric properties of vertically aligned carbon nanotubes (CNTs) are characterized using the piezoresponse force microscopy method. Dependence of piezoelectric properties on the nitrogen concentration is established. It is shown that CNTs have predominantly longitudinal polarization due to the direction of the dipole moment in the bamboo-like “bridges”. It has been established that a decrease in the growth temperature from 690 to 645°С leads to an increase in the piezoelectric strain coefficient of CNTs from 4.5 to 21.2 pm ⋅ V–1. The obtained results can be used in the development of energy-efficient nanopiezotronic devices.

Achieving ultrahigh electromechanical properties with high TC in PNN-PZT textured ceramics

<001> textured Pb(Ni1/3Nb2/3)O3-PbZrO3-PbTiO3 (PNN-PZT) ceramics were prepared by templated grain growth (TGG) technique using 0.36PNN-xPZ-(0.64-x)PT (x = 0.23, 0.25 and 0.27) powder matrix. Optimum template content was derived to achieve the best electromechanical properties of textured ceramics. The piezoelectric coefficient d33 = 1165 pC/N, Curie temperature TC = 197 °C, longitudinal mode electromechanical coupling factor k33 = 0.86 and a very large effective piezoelectric strain coefficient d33* = 2041 pm/V were simultaneously achieved at the morphotropic phase boundary (MPB) composition (x = 0.25) with 3 vol.% BaTiO3 (BT) templates. Domain structures of textured ceramics were analyzed in detail to reveal the origin of these high piezoelectric and electromechanical properties.

The effect of Cu doping on the piezoelectric properties of ZnO systems: First-principles calculations

First-principles calculations are performed, revealing a significant enhancement of the piezoelectric properties of wurtzite Zn[Formula: see text]O[Formula: see text] upon the incorporation of a single Cu atom. Research has demonstrated that the piezoelectric constant [Formula: see text] reaches its maximum value at a doping concentration of 1.4% for Cu atoms. The lattice parameters a and c of Zn[Formula: see text]O[Formula: see text] are decreased and the piezoelectric strain coefficient [Formula: see text] is increased by replacing one Cu atom in Zn[Formula: see text]O[Formula: see text]. It is found that elastic softening is the primary factor responsible for the increase of [Formula: see text] in Zn[Formula: see text]Cu1O[Formula: see text]. By differential charge density analysis, it is found that the covalency between Cu–O bonds is lower than that of Zn–O bonds, and the covalent bonding characteristics are weakened. Bader charge analysis shows that the charge of Cu is higher than that of Zn, indicating a more significant ionic bonding feature than that of Zn. Thus, a weaker covalent and stronger ionic bond are considered to play an essential role in promoting elastic softening for ZnO, which eventually promotes a significant enhancement in piezoelectric properties.

Defect Dipole‐Induced Fatigue Strain Recoverability in Lead‐Free Piezoelectric Ceramics

AbstractPiezoelectric ceramics have garnered extensive utilization in high‐precision actuators, where the magnitude of electric field‐induced strain and fatigue resistance play crucial roles in actuation applications. Herein, an innovative strategy based on defect dipoles is proposed to form a defect‐engineered polymorphic phase transition and achieve a giant piezoelectric strain coefficient of 3080 pm V−1 in Li/Sr‐doped (K0.5Na0.5)NbO3 lead‐free piezoceramics. The mechanism responsible for the enhanced strain performance lies in the optimized strain compatibility between the refined stripe domains and the nanosized domains. Additionally, the results demonstrate that the material is able to recover from fatigue‐induced strain depletion under the stimulation of bipolar electric fields. This property can be phenomenologically explained by the rigid ion model, in which the application of reversal electric fields can facilitate the restoration of defect dipoles, thereby greatly contributing to strain recoverability. This study establishes a close correlation between the unipolar strain properties and the inherent flexibility of defect dipoles and provides new insight into the design of high‐reliability, large‐stroke piezoceramics.

Design and development of a new lead-free BiFeO3-BaTiO3 quenched ceramics for high piezoelectric strain performance

Designing a new high-performance lead-free ceramic has become a cutting-edge research topic due to growing concerns about the toxic nature of lead-based materials. In this work, a convenient strategy of compositional design and domain engineering is applied to the lead-fee BiFeO3-BaTiO3 ceramics which provides a flexible polarization free-energy profile for domain switching. Here, simultaneously enhanced dynamic piezoelectric constant (d33* ≈ 772 pm/V) and a good thermal-stability (Δd33* ≈ 26% over the temperature of 20–180 °C) are achieved with a high Curie temperature (TC) of 432 °C. This high piezoelectric strain performance is collectively attributed to multiple effects such as thermal quenching, suppression of defect charges by donor doping, chemically induced local structure heterogeneity, and electric field-induced phase transition. Furthermore, the addition of BT content decreased octahedral tilting that reduce anisotropy for domain switching and increased in tetragonality (cT/aT) providing a wider polar length for B-site cation displacement, leading to high piezoelectric strain performance. Atomic-resolution transmission electron microscopy and piezoelectric force microscopy combined with X-ray diffraction results strongly support the origin of high piezoelectricity. The high and temperature-stable piezoelectric strain response of this work is superior to those of other lead-free ceramics. The synergistic approach of composition design and the concept present here for the origin of high strain response provides a paradigm for the development of new materials for high-temperature piezoelectric actuator applications.

A (Ba0.94Ca0.06)(Ti0.95Zr0.05)O3 ceramic sheet doping to improve the inverse piezoelectric effect of the poly (vinylidene fluoride‐trifluoroethylene)‐based composite film

AbstractA lead‐free tetragonal‐phase (Ba0.94Ca0.06)(Ti0.95Zr0.05)O3 (BCTZ) micro sheet is prepared by molten‐salt growth method, which exhibits a polarizing behavior of relaxor ferroelectricity and possesses a high dielectric constant (εr) of ~2400. Subsequently, the BCTZ sheet is evenly doped into ferroelectric copolymer P(VDF‐TrFE)55/45 mol% with different mass fractions, and the flexible BCTZ/P(VDF‐TrFE) composite films are prepared using a conventional solution casting process. εr of BCTZ/P(VDF‐TrFE) increases with the mass content of BCTZ, and reaches 23.8 in 20 wt% BCTZ sample. Meanwhile, at a high electrical field of 30 MV/m, the strain and electric field of BCTZ/P(VDF‐TrFE) are in the opposite direction, indicating a negative value of piezoelectric strain coefficient (d33) caused by inverse piezoelectric effect. In addition, d33 of different BCTZ/P(VDF‐TrFE) films are fitted using a strain‐electrical field curve, which firstly increases and then decreases with increases in BCTZ content. As such, a high d33 of −47.3 pC/N is obtained in BCTZ/P(VDF‐TrFE)15/85 wt% film. Thus, this research concerning the inverse piezoelectric effect may provide a reference for designing a piezoelectric composite using in transducers and actuators.

Mn-doped 0.15Pb(Yb1/2Nb1/2)O3–0.48Pb(Mg1/3Nb2/3)O3–0.37PbTiO3 piezoelectric ceramics for high performance high-power transducers

For high-power transducer applications, the piezoelectric materials should fulfill specific requirements of a high mechanical quality factor (Qm), a high piezoelectric strain coefficient (dij), and a high Curie phase transition temperature (Tc). In this study, we present an investigation of the structural, piezoelectric, and high-power characteristics of Mn-doped 0.15Pb(Yb1/2Nb1/2)O3–0.48Pb(Mg1/3Nb2/3)O3–0.37PbTiO3 (0.15PYN–0.48PMN–0.37PT) ceramics. The introduction of Mn dopants led to an increase in the tetragonal phase fraction within the 0.15PYN–0.48PMN–0.37 PT ceramics and the formation of oxygen vacancies, consequently significantly enhancing Qm due to their synergistic effect. Despite the hardening effect, the high value of the piezoelectric coefficient (d33) was maintained due to the increase in grain size. Particularly, the specimen doped with 3 mol% of Mn exhibited excellent piezoelectric properties of d33 = 345 pC/N, Qm = 1159, and Tc = 207°C. This specimen displayed a high vibration velocity of 0.6 m/s under the condition of equilibrium ΔT < 20°C (temperature rise from initial temperature), thereby confirming its immense potential for high-power transducer applications.

Active self-assembly of piezoelectric biomolecular films via synergistic nanoconfinement and in-situ poling

Piezoelectric biomaterials have attracted great attention owing to the recent recognition of the impact of piezoelectricity on biological systems and their potential applications in implantable sensors, actuators, and energy harvesters. However, their practical use is hindered by the weak piezoelectric effect caused by the random polarization of biomaterials and the challenges of large-scale alignment of domains. Here, we present an active self-assembly strategy to tailor piezoelectric biomaterial thin films. The nanoconfinement-induced homogeneous nucleation overcomes the interfacial dependency and allows the electric field applied in-situ to align crystal grains across the entire film. The β-glycine films exhibit an enhanced piezoelectric strain coefficient of 11.2 pm V−1 and an exceptional piezoelectric voltage coefficient of 252 × 10−3 Vm N−1. Of particular significance is that the nanoconfinement effect greatly improves the thermostability before melting (192 °C). This finding offers a generally applicable strategy for constructing high-performance large-sized piezoelectric bio-organic materials for biological and medical microdevices.

Janus monolayer ScXY (X≠Y = Cl, Br and I) for piezoelectric and valleytronic application: a first-principle prediction

Coexistence of ferromagnetism, piezoelectricity and valley in two-dimensional (2D) materials is crucial to advance multifunctional electronic technologies. Here, Janus ScXY (X≠Y = Cl, Br and I) monolayers are predicted to be piezoelectric ferromagnetic semiconductors with dynamical, mechanical and thermal stabilities. They all show an in-plane easy axis of magnetization by calculating magnetic anisotropy energy (MAE) including magnetocrystalline anisotropy energy and magnetic shape anisotropy energy. The MAE results show that they intrinsically have no spontaneous valley polarization. The predicted piezoelectric strain coefficients d 11 and d 31 (absolute values) are higher than ones of most 2D materials. Moreover, the d 31 (absolute value) of ScClI reaches up to 1.14 pm V−1, which is highly desirable for ultrathin piezoelectric device application. To obtain spontaneous valley polarization, charge doping are explored to tune the direction of magnetization of ScXY. By appropriate hole doping, their easy magnetization axis can change from in-plane to out-of-plane, resulting in spontaneous valley polarization. Taking ScBrI with 0.20 holes per f.u. as an example, under the action of an in-plane electric field, the hole carriers of K valley turn towards one edge of the sample, which will produce anomalous valley Hall effect, and the hole carriers of Γ valley move in a straight line. These findings could pave the way for designing piezoelectric and valleytronic devices.

Elastic, piezoelectric, and electronic properties of K1−xMxNbO3 (M = Li, Na): A first-principles study

The structural, elastic, piezoelectric, and electronic properties of K1−xMxNbO3 (M = Li, Na) were investigated by first-principles calculations. The results show that the modifications have effects on the elastic properties of KNbO3 and strengthen the anisotropy. Na and Li doping can slightly improve the piezoelectric stress tensor (e33) and piezoelectric strain tensor (d33) of KNbO3. With the increase in the x value from 0 to 0.5 in K1−xMxNbO3, the d33 value is improved from 24.4 to 36.3 pC/N (M = Na) and 41.5 pC/N (M = Li), and the piezoelectric property is improved by 1.49 and 1.70 times with the modifications of Na and Li, respectively. This conclusion is consistent with the result of Born effective charge and band structure results. The Born effective charge average values (Z*̄) for K and Nb atoms in K0.5M0.5NbO3 (M = Li, Na) are slightly increased compared to those in KNbO3. KNbO3 has an indirect bandgap, while Na and Li doping makes K0.5Na0.5NbO3 or K0.5Li0.5NbO3 a direct bandgap semiconductor. This study may provide a theoretical insight into Na and Li modified KNbO3 for their piezoelectricity.

Electrical output performance of PZT-5H under the superposition of temperature, temperature change rate and pulse stress

The static pyroelectric coefficient of PZT-5H thin slice was measured. The effects of temperatures, temperature change rates and pulse stress on the discharge characteristics of PZT under different electrical boundary conditions (open circuit and short circuit) were investigated by an improved split Hopkinson pressure bar system; The effects of temperature change rate and the pulse stress on dynamic piezoelectric coefficient and discharge characteristics of PZT were analyzed. The results show that the static pyroelectric coefficient of the piezoelectric ceramics is 4.16 × 10−8 C/cm2·°C. The piezoelectric voltage constant g33(σ, ∂ΔT), piezoelectric strain constant d33(σ, ∂ΔT), elastic compliance coefficient S and electromechanical coupling coefficient k were obtained by experiments at the given temperature and different temperature change rates.

Boosting the piezoelectric coefficients of flexible dynamic strain sensors made of chemically-deposited ZnO nanowires using compensatory Sb doping

The piezoelectric devices made of ZnO nanowires have received a great interest in the past decade as potential nanogenerators and sensors. However, their characteristics are still limited significantly by the screening of the piezoelectric potential generated under mechanical solicitations, originating from the high density of free electrons in ZnO nanowires. In order to tackle that issue, we develop the compensatory Sb doping of ZnO nanowires grown by chemical bath deposition, both in the low- and high-pH regions using Sb glycolate and ammonia as chemical additives. The adsorption process of Sb(III) species on the positively charged surfaces of ZnO nanowires proceeds through attractive electrostatic forces, resulting in the significant incorporation of Sb dopants with an atomic ratio in the range of 0.11–0.45%. The optical properties of Sb-doped ZnO nanowires exhibit additional phonon modes related to Sb dopants in the range of 500–750 cm-1 in the Raman spectra, and some specific characteristics in the nature and intensity of radiative recombination in the cathodoluminescence spectra. Importantly, the integration of Sb-doped ZnO nanowires encapsulated in PMMA and grown on PDMS into flexible piezoelectric dynamic strain sensors is shown to drastically boost the piezoelectric charge and voltage coefficients by a factor of 2.65 and 1.91, following the significant incorporation of Sb dopants. A subsequent thermal annealing under oxygen atmosphere is revealed to further increase the piezoelectric charge and voltage coefficients by an additional factor of 1.38 and 1.49, following the activation of Sb doping and engineering of hydrogen-related defects. Two figures-of-merit are eventually derived from the piezoelectric charge and voltage coefficients and their values for flexible piezoelectric composites made of annealed Sb-doped ZnO nanowires are compared to more conventional piezoelectric materials, showing their high potential for medical devices. The present findings highlight the strategy consisting in simultaneously introducing compensatory acceptors and engineering hydrogen-related defects to reduce the screening effect, representing an additional powerful way to enhance the characteristics of the piezoelectric devices integrating ZnO nanowires.