Piezoelectric Coefficient Research Articles

Integrated Piezoelectric/Pyroelectric Sensing from Organic-Inorganic Perovskite Nanocomposites.

Flexible ferroelectric materials are in high demand in emerging energy harvesting and self-powered sensing electronics. However, current flexible ferroelectric polymers, such as poly(vinylidene fluoride) (PVDF) and P(VDF-co-trifluoroethylene) [P(VDF-TrFE)], cannot fulfill the requirement of emerging applications because of their low piezoelectric/pyroelectric performance. In this work, using organic-inorganic hybrid perovskite [(4-aminotetrahydropyran)2PbBr2Cl2] ferroelectric nanorods as reinforcement and P(VDF-TrFE) as the matrix, we prepared flexible core-sheath piezoelectric nanofibers and pyroelectric nanocomposite films. The core-sheath nanofibers possess a record-high piezoelectric coefficient of 78.1 pC·N-1, and the output voltage reaches to 192 V, with the maximum power density of 1.04 W·m-2. On the other hand, the nanocomposite film exhibits a high pyroelectric coefficient of 58.2 μC·m-2·K-1 at 333 K, which yields a voltage of 6.1 V under 6.6 K temperature fluctuation. An integrated flexible sensing device was prepared by combining piezoelectric nanofibers and pyroelectric films, which can wirelessly detect vibration and temperature fluctuation simultaneously. The integrated device is suitable for pipelines, power equipment, and other scenarios, where vibration and temperature need to be monitored at the same time.

Mechanic-electric-thermal coupling simulation method of Lamb wave under variable temperature

The propagation mechanism of Lamb waves exhibits more intricate in the variable operational environment of high-speed trains. Simulation methods are widely used to study Lamb wave propagation characteristics due to economic and time constraints. A mechanic-electric-thermal coupling simulation method to study the propagation mechanism of Lamb waves under variable temperatures is proposed in this paper. To accurately simulate the dynamic behavior of Piezoelectric Transducer (PZT) under variable temperature, a nonlinear numerical model of the dynamic parameters (piezoelectric coefficient, dielectric constant) of PZTs has been developed based on the experiment of the temperature influence on Lamb wave. The model emphasizes the nonlinear pattern of change in the key dynamic parameters of the PZT with temperature fluctuations. In addition, a thermal expansion stress model of the PZT-bonding layers-structure is established to reveal the mechanical-thermal coupling mechanism. Based on the COMSOL, a mechanical-electrical-thermal direct coupling simulation model of PZT-bonding layers- structure under variable temperature is established. The simulation results at −40 °C to 80 °C are obtained and compared to the experiment. The results show that the simulation signal is highly consistent with the experimental measurement signal, and the simulation method proposed in this paper has high accuracy.

A wafer-level characterization method of thin film transverse piezoelectric coefficient evaluation

Accurate measurement of the piezoelectric property of thin films is critical for thin film process development and device design optimization. In this paper, we proposed a wafer-level thin film characterization method that provides a non-destructive, single-side measurement solution for evaluating and in-process monitoring the transverse piezoelectric coefficient (e31,f). The e31,f of piezoelectric films was determined by measuring the deflection of circular electrode induced by the converse piezoelectric effect, with the electrodes fabricated on top of piezoelectric thin film on a silicon substrate. The constitutive equation of the unimorph plate reveals a quadratic dependence of top electrode deflection (δ) on the radius (r), which was subsequently utilized to calculate the e31,f while considering the electrode edge effect. Determined by non-constant variations of |δ/r2| from finite element method (FEM) simulation results, the electrode edge effect leads to the specification of electrode size and substrate thickness for evaluating piezoelectric coefficient. A comprehensive FEM simulation analysis of the influence of wafer size and electrode location on the accuracy of the proposed method demonstrated its reliability for wafer-level characterization. The e31,f measurement results of single-crystal (s-PZT) and polycrystalline PZT (p-PZT) exhibit good agreement between the proposed wafer-level method and the die-level cantilever method. These results demonstrated that the proposed single-side wafer-level method provides a reliable measurement technique for e31,f characterization of piezoelectric thin film.

Two-Dimensional Janus XY (X/Y=P, As, Sb, Bi, X≠Y) material with excellent piezoelectricity and carrier mobility for Visible-Light water splitting

Janus materials, with unique physical and chemical properties, show promise in turning solar energy into clean hydrogen through photocatalytic water splitting. Herein, utilizing first-principles calculations, we have confirmed the stabilities of newly discovered two-dimensional XY materials (X/Y=P, As, Sb, Bi, X≠Y), unveiling their promising capabilities in photocatalytic water splitting. These Janus structures exhibit broad bandgaps, paired with remarkable electron carrier mobilities. Their out-of-plane piezoelectric coefficients (d31) varying from 0.10 pm/V to 0.31 pm/V, surpass those of many typical two-dimensional materials, highlighting their considerable potential in energy conversion applications. These materials stand out in water splitting due to their favorable band edges and electrostatic potential gradients, achieving solar-to-hydrogen (STH) efficiencies above 20 % and visible light absorption efficiencies over 10 %. Remarkably, Janus PBi showcases STH and visible light absorption efficiencies up to 29.01 % and 19.33 %, respectively. By using biaxial strain, Janus PAs and PSb can reach a peak STH efficiency of over 30 % and a top visible light absorption efficiency above 20 %. Janus AsSb (PBi) exhibits exceptionally high photocatalytic activity for the oxygen (hydrogen) evolution reaction. These attributes suggest that these Janus XY materials are promising contenders as photocatalytic catalysts for water-splitting applications.

The structural evolution and electric field-induced strain performance of Bi0.5(Na0.41K0.09)TiO3–Ba(Fe0.5Sb0.5)O3 lead-free piezoelectric ceramics

In recent years, lead-free Bi0.5Na0.5TiO3 (BNT) based piezoelectric ceramics with excellent strain properties have gained widespread recognition for their application in high-precision displacement actuators. The (1-x)(0.82Bi0.5Na0.5TiO3-0.18K0.5Bi0.5TiO3)-xBa(Fe0.5Sb0.5)O3 ceramics were fabricated through the die-pressing method in this work. The effect of BFS introduction on the dielectric, ferroelectric and microstructure characteristics of BNKT ceramics was systematically investigated. Among these compositions, the BNKT-0.015BFS ceramics exhibited a piezoelectric strain coefficient (d33*) of 658 pm/V at an electric field of 55 kV/cm, while achieving a strain response of 0.51 % at 85 kV/cm. The observed improvement in strain performance can be attributed to the evolution from non-ergodic relaxor state to ergodic relaxor state caused by BFS substitution. Furthermore, transmission electron microscopy (TEM) explicitly confirmed coexistence of rhombohedral and tetragonal phase and revealed the morphology of nanosized domains. This study adds to a deeper comprehension of the characteristics of strain response enhancement in BNT-based ceramics, opening up avenues for designing novel lead-free piezoelectric ceramics with outstanding electromechanical performance.

Excellent Hole Mobility and Out-of-Plane Piezoelectricity in X-Penta-Graphene (X = Si or Ge) with Poisson's Ratio Inversion.

Recently, the application of two-dimensional (2D) piezoelectric materials has been seriously hindered because most of them possess only in-plane piezoelectricity but lack out-of-plane piezoelectricity. In this work, using first-principles calculation, by atomic substitution of penta-graphene (PG) with tiny out-of-plane piezoelectricity, we design and predict stable 2D X-PG (X = Si or Ge) semiconductors with excellent in-plane and out-of-plane piezoelectricity and extremely high in-plane hole mobility. Among them, Ge-PG exhibits better performance in all aspects with an in-plane strain piezoelectric coefficient d11 = 8.43 pm/V, an out-of-plane strain piezoelectric coefficient d33 = -3.63 pm/V, and in-plane hole mobility μh = 57.33 × 103 cm2 V-1 s-1. By doping Si and Ge atoms, the negative Poisson's ratio of PG approaches zero and reaches a positive value, which is due to the gradual weakening of the structure's mechanical strength. The bandgaps of Si-PG (0.78 eV) and Ge-PG (0.89 eV) are much smaller than that of PG (2.20 eV), by 2.82 and 2.47 times, respectively. This indicates that the substitution of X atoms can regulate the bandgap of PG. Importantly, the physical mechanism of the out-of-plane piezoelectricity of these monolayers is revealed. The super-dipole-moment effect proposed in the previous work is proved to exist in PG and X-PG, i.e., it is proved that their out-of-plane piezoelectric stress coefficient e33 increases with the super-dipole-moment. The e33-induced polarization direction is also consistent with the super-dipole-moment direction. X-PG is predicted to have prominent potential for nanodevices applied as electromechanical coupling systems: wearable, ultra-thin devices; high-speed electronic transmission devices; and so on.

Phase evolution and piezoelectric properties of SnO2 doped KNN based piezoceramics

The present research focuses on the electrical properties of lead-free piezoceramics (0.985-x)(K0.485Na0.485Li0.03)(Nb0.96Sb0.04)O3-0.015(Bi0.5Na0.5)ZrO3-xSnO2 (KNNLS-BNZ-xSnO2, x = 0.003, 0.006, 0.009, 0.012, and 0.015). This study examines the influence of varying SnO2 doping levels on the microstructure and piezoelectric properties of the ceramics. All the ceramics prepared demonstrate pure perovskite structure without any secondary phases. The Rietveld refinement analysis of XRD data reveals the existence of multiphase evolution around room temperature. The tetragonality (c/a) and cell volume of the ceramics tend to rise with an increase in Sn4+ content, potentially leading to improved ferroelectric characteristics. The optimum values obtained were Curie temperature (Tc) = 395 oC, remnant polarization (Pr) = 21.07 μC/cm2, piezoelectric coefficient (d33)=357 pC/N, piezoelectric voltage constant (g33) = 24 × 10−3 Vm/N, and figure of merit (FOMoff) = 10.34 pm2/N, corresponding to the ceramic doped with x = 0.012 SnO2. The findings indicate that an optimal amount of Sn4+ in the host composition KNNLS-BNZ improves piezoelectric properties by constructing an R-O-T phase boundary near room temperature. This study suggests that the ceramic with x = 0.012 SnO2 exhibits a favorably high Tc coupled with an exceptional energy harvesting capability, making it a suitable candidate for energy harvesting applications.

Exploring Macroscopic Dipoles of Designed Cyclic Peptide Ordered Assemblies to Harvest Piezoelectric Properties

AbstractCrystalline materials exhibiting non‐centrosymmetry and possessing substantial surface dipole moments play a critical role in piezoelectricity. Designing biocompatible self‐assembled materials with these attributes is particularly challenging when compared to inorganic materials and ceramics. In this study, we elucidate the crystal conformations of novel cyclic peptides that exhibit self‐assembly into tubular structures characterized by unidirectional hydrogen bonding and piezoelectric properties. Unlike cyclic peptides derived from alternating L‐ and D‐amino acids, those derived from new δ‐amino acids demonstrate the formation of self‐assembled tubes with unidirectional hydrogen bonds. Further, the tightly packed tubular assemblies and higher macrodipole moments result in superior piezoelectric coefficients compared to peptides with lower macrodipole moments. Our findings underscore the potential for designing cyclic peptides with unidirectional hydrogen bonds, thereby paving the way for their application in design of biocompatible piezo‐ and ferroelectric materials.

Waste cotton textile-derived cellulose composite porous film with enhanced piezoelectric performance for energy harvesting and self-powered sensing

Integrating flexible piezoelectric nanogenerators (PENGs) into wearable and portable electronics offers promising prospects for motion monitoring. However, it remains a significant challenge to develop environmentally friendly PENGs using biodegradable and cost-effective natural polymers for mechanical energy harvesting and self-powered sensing. Herein, reduced graphene oxide (rGO) and barium titanate (BTO) were introduced into regenerated cellulose pulp to fabricate a composite porous film-based PENG. The incorporation of rGO not only increased the electrical conductivity of the porous film but also enhanced the dispersibility of BTO. Moreover, the unique pore structure of the composite porous film improved the polarization effect of the air inside the pores, thereby greatly boosting the overall piezoelectric performance. The piezoelectric coefficient of the resulting composite porous film reaches up to 41.5 pC·N−1, which is comparable to or higher than those reported in similar studies. Consequently, the PENG assembled from this cellulose/rGO/BTO composite porous film (CGB-PENG) achieved an output voltage of 47 V, a current of 4.6 μA, and a power density of 30 μW·cm−2, approximately three times the output voltage and ten times the power density of similar studies. This work presents a feasible approach for the fabrication of high-performance cellulose-based PENGs derived from recycled waste cotton textiles.

Exploring Macroscopic Dipoles of Designed Cyclic Peptide Ordered Assemblies to Harvest Piezoelectric Properties.

Crystalline materials exhibiting non-centrosymmetry and possessing substantial surface dipole moments play a critical role in piezoelectricity. Designing biocompatible self-assembled materials with these attributes is particularly challenging when compared to inorganic materials and ceramics. In this study, we elucidate the crystal conformations of novel cyclic peptides that exhibit self-assembly into tubular structures characterized by unidirectional hydrogen bonding and piezoelectric properties. Unlike cyclic peptides derived from alternating L- and D-amino acids, those derived from new δ-amino acids demonstrate the formation of self-assembled tubes with unidirectional hydrogen bonds. Further, the tightly packed tubular assemblies and higher macrodipole moments result in superior piezoelectric coefficients compared to peptides with lower macrodipole moments. Our findings underscore the potential for designing cyclic peptides with unidirectional hydrogen bonds, thereby paving the way for their application in design of biocompatible piezo- and ferroelectric materials.

Flexible BTO piezoelectric generator fabricated by hydrothermal method with the assistance of lignocellulose and carbon nanomaterials

It is of great significance to develop piezoelectric composites with mechanical flexibility and high electromechanical coupling characteristics for the collection and conversion of mechanical energy. In this work, a barium titanate (BTO) based piezoelectric composite was prepared by hydrothermal synthesis and high-temperature carbonization with the assistance of cellulose nanofibers (CNF), graphene oxide (GO) and carboxylated carbon nanotubes (C-CNT). C-CNT, GO and CNF can provide growth sites for BTO, but compared with C-CNT, CNF and GO have stronger interaction with BTO, which can improve the compatibility between BTO and CNF/polyvinylidene fluoride (PVDF) matrix. The tensile strength of the composite membrane prepared by GO-CNF-BTO treated at 1100 °C can reach 23.36 ± 8.30 MPa. After further hot pressing and polarization treatment, its longitudinal piezoelectric coefficient (d33) reaches 9.8 ± 2.6 pC·N−1. Correspondingly, the open-circuit voltage (VOC) and short-circuit current (ISC) increases to 11.64 V and 824 nA, respectively. In addition, the assembled piezoelectric generator (PEG) can charge for small commercial capacitors, as well as light small bulbs and electronic screens. It also has good piezoelectric output stability and sensing performance, which can effectively convert the mechanical energy from human motion into electrical energy. This work provides a reference for the performance improvement of flexible piezoelectric devices.

High Quality Epitaxial Piezoelectric and Ferroelectric Wurtzite Al1- xScxN Thin Films.

Piezoelectric and ferroelectric wurtzite are promising to reshape modern microelectronics because they can be easily integrated with mainstream semiconductor technology. Sc doped AlN (Al1- xScxN) has attracted much attention for its enhanced piezoelectric and emerging ferroelectric properties, yet the commonly used sputtering results in polycrystalline Al1- xScxN films with high leakage current. Here, the pulsed laser deposition of single crystalline epitaxial Al1- xScxN thin films on sapphire and 4H-SiC substrates is reported. Pure wurtzite phase is maintained up to x = 0.3 with ≤0.1 at% oxygen contamination. Polarization is estimated to be 140 µCcm-2 via atomic scale microscopy imaging and found to be switchable via a scanning probe. The piezoelectric coefficient is found to be five times of the undoped one when x = 0.3, making it desirable for high-frequency radiofrequency (RF) filters and 3D nonvolatile memories.

Investigation of Piezoelectric Properties in Ca-Doped PbBa(Zr,Ti)O3 (PBZT) Ceramics.

The perovskite-structured materials Pb0.75Ba0.251-xCax(Zr0.7Ti0.3)O3 for x = 1 and 2 at.% were synthesized using the conventional mixed-oxide method and carbonates. Microstructural analysis, performed using a scanning electron microscope, revealed rounded grains with relatively inhomogeneous sizes and distinct grain boundaries. X-ray diffraction confirmed that the materials exhibit a rhombohedral structure with an R3c space group at room temperature. Piezoelectric resonance measurements were conducted to determine the piezoelectric and elastic properties of the samples. The results indicated that a small amount of calcium doping significantly enhanced the piezoelectric coefficient d31. The calcium-doped ceramics exhibited higher electrical permittivity across the entire temperature range compared to the pure material, as well as a significant value of remanent polarization. These findings indicate that the performance parameters of the base material have been significantly improved, making these ceramics promising candidates for various applications.

High-k2eff AlSc0.095N-based two-dimensional coupled mode resonators with transducer design toward 5G application

This paper presents the two-dimensional coupled mode resonators (TCMRs) based on 9.5 % scandium-doped aluminum nitride (AlScN) films. We report the design, fabrication, and characterization of 770 nm-thick AlSc0.095N TCMRs, which utilize the e31 and e33 piezoelectric coefficients to jointly excite the coupled mode with high electromechanical coupling coefficient (k2eff). The TCMRs with different electrical boundary conditions (TCMR-I and TCMR-II) are proposed, and the dependence of the resonant mode on the electrode period was studied. The effect of electrode duty factor (DF) on the resonator performance was explored, and both TCMR-Ⅰ and TCMR-II with DF = 0.5 exhibit the maximum k2eff value. Through measured characterization and simulation analysis, the effect of interdigitated transducer (IDT) thickness on resonator performance was studied. In addition, the equivalent electrical parameters of the prepared resonator were extracted using the MBVD equivalent circuit model. The Qs values of TCMR-Ⅰ and TCMR-II fabricated in this paper can reach 1134 and 165, and the k2eff values can reach 3.5 % and 7.86 %, respectively.

Coexistence of Large In-Plane and Out-of-Plane Piezoelectric Response in Group III–VI XMAY2 (X = I; M = Ti, Zr; A = Al, Ga; Y = S, Se) Monolayers

Flexible materials with both in-plane and out-of-plane piezoelectric coefficients are needed in the development of advanced nanoelectromechanical systems. However, the challenge is to find flexible materials with the coexistence of in-plane and -out-of-plane piezoelectric responses, which hinders the progress of high-performance piezoelectric sensor development. In this paper, we propose the flexible XMAY2 (X = I; M = Ti, Zr; A = Al, Ga; Y = S, Se) monolayers, which belong to the group III-VI XMAY2 family, which showcase notable in-plane and out-of-plane piezoelectric coefficients. The in-plane (d11) and out-of-plane (d31) piezoelectric coefficients of the XMAY2 monolayers vary from 5.20 to 7.04 pm/V and from −0.23 to 0.48 pm/V, respectively. The large in-plane and out-plane piezoelectric responses coexist (d11 = 7.04 pm/V; d31 = 0.48 pm/V) in the IZrGaS2 monolayer, which is larger than other materials in the XMAY2 family, such as SMoSiN2 (d11 = 2.51; d31 = 0.28 pm/V). In addition, the mechanical and transport properties of XMAY2 demonstrate its impressive flexibility characteristics as well as its efficient electrical conductivity. Due to inversion symmetry breaking in both atomic structure and charge distribution of XMAY2 monolayers, the group III-VI XMAY2 family exhibits a potentially rich scope of applications in the field of piezoelectricity.

Wafer-scale Te thin film with high hole mobility and piezoelectric coefficients

p-type semiconductors are significant for integrated nanoelectronics. Tellurium (Te), a mono-elemental material, is a p-type semiconductor with high mobility. Its outstanding performance renders it widely applicable in the fields of electronics and optoelectronics. However, the wafer-scale fabrication of Te thin films is challenging. In this study, we reported an ion-bean sputtered Te thin film and investigated the effects of annealing temperatures. Annealing-induced crystallization kinetics were assessed through Raman spectroscopy, x-ray diffraction, and atomic force microscopy. After annealing, the film's conductivity increased from 10−5 to 10−4 S and mobility from 18 to 53 cm2 V−1 s−1. Dual AC resonance tracking switching spectroscopy piezoelectric force microscopy is used to investigate piezo/ferroelectric properties. The coercive voltages are −2 and 4 V respectively, and the effective piezoelectric coefficient (d33) is 40 pm/V. Butterfly and phase-switching loops demonstrate its possible ferroelectricity. The Te thin film has potential applications in optoelectronics, nonvolatile memory devices, and neuromorphic computation.

High piezoelectric coefficient and thermal stability of BKT-BFPT ceramics with ex situ high depoling temperature at 520 °C

The in situ and ex situ temperature dependence of dielectric and piezoelectric properties of 0.1(Bi0.5K0.5)TiO3-0.6BiFeO3-0.3PbTiO3 (BKT-BFPT) ceramics were characterized, and related mechanisms were studied. The tetragonal distortion, Curie temperature Tc, depoling temperature Td, and piezoelectric coefficient d33 of BKT-BFPT are 0.06, 545 °C, 520 °C, and 205 pC/N, respectively. The in situ piezoelectric coefficient variation of BKT-BFPT ceramics from room temperature to 280 °C is only 10%, being 1/5 and 1/10 those of 0.36BiScO3-0.34PbTiO3 and Pb(Zr0.52Ti0.48)O3 ceramics. The better dielectric and piezoelectric thermal stabilities are owing to the temperature insensitive domain texture of BFPT-BKT ceramics due to their large lattice distortion. Resistivity results reflected that the higher depoling temperature derived from the ex situ measurement than that from the in situ test results from the high-temperature conductivity.

Lead-free ferroelectrics with giant unipolar strain for high-precision actuators

The trade-off between electrostrain and strain hysteresis for piezo/ferroelectric materials largely restrains the development of high precision actuators and remains unresolved over the past few decades. Here, a simple composition of (Bi0.5Na0.5)1-x/100Srx/100TiO3 in the ergodic relaxor state is collaboratively designed through the segregated domain structure with the ferroelectric core, local polarization heterogeneity, and defect engineering. The ferroelectric core can act as a seed to facilitate the field-induced nonpolar-to-polar transition. Together with the internal bias field caused by defect dipoles and adjusted through electric field cycling and heat treatment technology, a giant unipolar strain of 1.03% is achieved in the x = 30 ceramic with a low hysteresis of 27%, while the electric-field-independent large-signal piezoelectric strain coefficient of ~1000 pm/V and ultralow hysteresis of <10% can be obtained in the x = 35 ceramic. Intriguingly, the low-hysteresis high strain also exhibits near-zero remnant strain, excellent temperature and cycling stability.

Ultrahigh energy harvesting ability of PVDF incorporated with 2D halide perovskite nanosheets via interface effect

Two-dimensional (2D) perovskites have recently emerged as an new family of ferroelectrics and attracted extensive attention for their specific surface interface characteristics benefitting from the unique structure by inserting hydrophobic organic cations into conventional three-dimensional frameworks. In this study, 2D metal–organic perovskite nanosheets, (C4H9NH3)2CsPb2Br7, ((BA)2CsPb2Br7), were successfully synthesized by facile temperature-cooling method and introduced into poly (vinylidene fluoride) (PVDF) polymer fibers to construct flexible piezoelectric energy harvester (PEH). (BA)2CsPb2Br7/PVDF nanofibers reveal a high piezoelectric coefficient (d33) of 63.3 pm/V, which is 2.9 times of the PVDF polymer (21.7 pm/V). Principally, the PVDF composite with 5 wt% (BA)2CsPb2Br7 nanosheet filler assumes an superior electroactive phase amount of about ∼ 93 % profiting from the interfacial interaction between BA+ cations of (BA)2CsPb2Br7 and the dipoles of PVDF. The PEH based on (BA)2CsPb2Br7 nanosheets embedded in PVDF fibers showed a maximum output voltage, 135 V, which is almost 17 times of the PEH based on neat PVDF fibers. Furthermore, the interfacial interaction between (BA)2CsPb2Br7 and PVDF was analyzed by first principle DFT study which reveals electrons migrate and the interfacial polarization between the interface. Simultaneously, (BA)2CsPb2Br7/PVDF composite fibers based PEH reveals exceptional long-term stabilities and durability. More attractively, the exceptional performance of this fabricated PEH evinces a pressure sensitivity of ∼ 7.3 V/N and bio-mechanical harvesting behavior arising from varied human motions, such as beating, pressing, twisting, walking and running. This cost-effective and high performance of (BA)2CsPb2Br7/PVDF based PEH is favorable for the continuation of 2D halide perovskites for further application in new energy and biomechanical filed.

Investigation of Piezoelectric Properties of Wurtzite AlN Films under In-Plane Strain: A First-Principles Study

This research article presents a comprehensive first-principles study on the piezoelectric properties of Wurtzite Aluminum Nitride (AlN) films under in-plane strain conditions. By calculating the piezoelectric tensor coefficients (e33, e31, and e15), we investigate the variation patterns of these constants with respect to in-plane strain. Our results indicate significant changes in the piezoelectric constants within the range of in-plane strain considered, exhibiting a linear trend despite opposite trends for e33 compared to e31 and e15. This study highlights the extreme sensitivity of AlN films’ piezoelectric performance to in-plane strain, suggesting its potential as an effective means for tuning and optimizing the piezoelectric properties of AlN-based devices.