Abstract
p-type semiconductors are significant for integrated nanoelectronics. Tellurium (Te), a mono-elemental material, is a p-type semiconductor with high mobility. Its outstanding performance renders it widely applicable in the fields of electronics and optoelectronics. However, the wafer-scale fabrication of Te thin films is challenging. In this study, we reported an ion-bean sputtered Te thin film and investigated the effects of annealing temperatures. Annealing-induced crystallization kinetics were assessed through Raman spectroscopy, x-ray diffraction, and atomic force microscopy. After annealing, the film's conductivity increased from 10−5 to 10−4 S and mobility from 18 to 53 cm2 V−1 s−1. Dual AC resonance tracking switching spectroscopy piezoelectric force microscopy is used to investigate piezo/ferroelectric properties. The coercive voltages are −2 and 4 V respectively, and the effective piezoelectric coefficient (d33) is 40 pm/V. Butterfly and phase-switching loops demonstrate its possible ferroelectricity. The Te thin film has potential applications in optoelectronics, nonvolatile memory devices, and neuromorphic computation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
