Photosensitivity Of Thin Films Research Articles

The Effect of Plasma Power on the Properties of Amorphous Silicon-Germanium Thin Films

Amorphous Silicon-germanium films were prepared by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) on glass substrates. The structural characteristics, deposition rate, photosensitivity, and optical band gap of the silicon-germanium thin films were investigated with plasma power varying from 15W to 45W. The deposition rate increased within a certain range of plasma power. With the plasma power increasing, the photosensitivity of the thin films decreased. It is evident that varying the plasma power changes the deposition rate, photosensitivity, which was fundamentally crucial for the fabrication of a-Si/a-SiGe/a-SiGe stacked solar cells. For our deposition system, the most optimization value was 30-35W.

Photosensitivity of thin films of semiconductor nanocomposites based on metal-organic complexes with Cu+ and Ru2+

The photosensitivity of nanocomposites in a system constituted by an organic transition metal complex and silica was studied. It is shown that the photosensitivity of a nanocomposite is determined by the valence and the ionization potential of the metal atom, which is equal to (3–8)×104 cm2/J (quantum yield of carrier photogeneration is 0.03–0.05) for the Cu+ complex and 5×103 cm2/J for the Ru2+ complex. The possibility of controlling the magnitudes and spectra of both the photosensitivity and luminescence of thin films of nanocomposites based on these complexes by varying the structure of metal complexes and the fact that the quantum efficiency of photogeneration can be raised by introducing transport molecules into the structure of a nanocomposite gives reason to believe that photosensitive and electroluminescent devices can be created on the basis of these nanocomposites.

Photosensitivity of thin films of germanium

Photosensitivity of thin films of germanium