Photosensitivity of thin films of semiconductor nanocomposites based on metal-organic complexes with Cu+ and Ru2+

Abstract

The photosensitivity of nanocomposites in a system constituted by an organic transition metal complex and silica was studied. It is shown that the photosensitivity of a nanocomposite is determined by the valence and the ionization potential of the metal atom, which is equal to (3–8)×104 cm2/J (quantum yield of carrier photogeneration is 0.03–0.05) for the Cu+ complex and 5×103 cm2/J for the Ru2+ complex. The possibility of controlling the magnitudes and spectra of both the photosensitivity and luminescence of thin films of nanocomposites based on these complexes by varying the structure of metal complexes and the fact that the quantum efficiency of photogeneration can be raised by introducing transport molecules into the structure of a nanocomposite gives reason to believe that photosensitive and electroluminescent devices can be created on the basis of these nanocomposites.