Properties Of Photoresist Research Articles

Relation between photoresistive properties of polymer-diazide systems and supermolecular organization of the layer

A study was made of the mechanism of formation of punctures in obtaining relief images using negative photoresists consisting of a polymer-diazide system. It was found that resistive properties of the photoresist layer depend on supermolecular organization of the polymer-diazide system, particularly on the selectivity of diazide distribution in the hydrophilic micro-regions of the polymer. With selective distribution of diazide molecules in hydrophilic microregions, puncture formation is only due to the natural permeability of the photoresist layer, which may be reduced considerably by increasing the rigidity of the matrix. When this molecular distribution of diazide is disrupted in the photoresist layer, cavities may form when nitrogen is liberated during photo-decomposition of diazide. Cavity formation may also cause punctures. The organization of the photoresist layer is determined by its prehistory.

Properties of Liquid Photoresists used in the Photoetching of Stainless Steel

In the use of liquid photoresists for photoetching, measurement of coating thickness is important for process control. Relative average thickness can be determined from weight/unit areas, but value...

Linearity and enhanced sensitivity of the Shipley AZ-1350B photoresist

The properties of the Shipley AZ-1350B positive photoresist used with the Shipley AZ-303A developer were investigated. It was found that the use of AZ-303A developer results in a significant improvement of the sensitivity and the linearity of the photoresist. The unexposed etch rate of the photoresist was 35 A +/- 5 A/sec. Gratings of high efficiency have been successfully fabricated using the above combination of photoresist and developer.

Negative photoresists and integrated optics

Physicochemical treatments are proposed to optimize the properties of negative photoresists. These materials are used to realize phase filters and components for integrated optics.

Characterization of positive photoresist

This paper presents techniques for measuring a new set of parameters used to describe the image forming properties of positive photoresist [1]. Exposure is described by three optical parameters, A, B, and C, through which the process is modelled. Development is described in terms of a rate relationship R(M) between the rate of removal of photoresist in the developer and the degree of exposure of the photoresist. This set of functional parameters provides a complete description of positive photoresist exposure and development, and is the basis for the theoretical process models discussed in the accompanying papers.

Experimental results and optical properties of photoresist: Analysis and study of preexposure phenomena

With a brief survey on the physico-chemical nature of photopolymers, we give the results of our investigations on the sensitivity and response of photoresist. We used K. O. R. Kodak and studied the influence of a preexposure on the response of the emulsion. We made phase gratings by contact exposure and studied the degree of modulation as a function of exposure and preexposure. We have plotted a set of curves which can be used directly to synthesize phase filters, gratings or kinoform.