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Abstract
The properties of the Shipley AZ-1350B positive photoresist used with the Shipley AZ-303A developer were investigated. It was found that the use of AZ-303A developer results in a significant improvement of the sensitivity and the linearity of the photoresist. The unexposed etch rate of the photoresist was 35 A +/- 5 A/sec. Gratings of high efficiency have been successfully fabricated using the above combination of photoresist and developer.
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