Photonic Waveguides Research Articles

Erbium-ytterbium codoped thin-film lithium niobate integrated waveguide amplifier with a 27 dB internal net gain.

A photonic integrated waveguide amplifier fabricated on erbium-ytterbium (Er-Yb) codoped thin-film lithium niobate (TFLN) has been investigated in this work. A small-signal internal net gain of 27 dB is achieved at a signal wavelength of 1532 nm in the fabricated Er-Yb TFLN waveguide amplifier pumped by a diode laser at ≈980 nm. Experimental characterizations reveal the suitability of waveguide fabrication by the photolithography-assisted chemo-mechanical etching (PLACE) technique and also the gain in an Yb-sensitized-Er material. The demonstrated high-gain chip-scale TFLN amplifier is promising for interfacing with established lithium niobate integrated devices, greatly extending the spectrum of TFLN photonic applications.

Optofluidic memory and self-induced nonlinear optical phase change for reservoir computing in silicon photonics

Nanophotonics allows to employ light-matter interaction to induce nonlinear optical effects and realize non-conventional memory and computation capabilities, however to date, light-liquid interaction was not considered as a potential mechanism to achieve computation on a nanoscale. Here, we experimentally demonstrate self-induced phase change effect which relies on the coupling between geometric changes of thin liquid film to optical properties of photonic waveguide modes, and then employ it for neuromorphic computing. In our optofluidic silicon photonics system we utilize thermocapillary-based deformation of thin liquid film capable to induce nonlinear effect which is more than one order of magnitude higher compared to the more traditional heat-based thermo-optical effect, and allowing operation as a nonlinear actuator and memory element, both residing at the same compact spatial region. The resulting dynamics allows to implement Reservoir Computing at spatial region which is approximately five orders of magnitude smaller compared to state-of-the-art experimental liquid-based systems.

Wafer-scale inverted gallium phosphide-on-insulator rib waveguides for nonlinear photonics.

We report a gallium phosphide-on-insulator (GaP-OI) photonic platform fabricated by an intermediate-layer bonding process aiming to increase the manufacture scalability in a low-cost manner. This is enabled by the "etch-n-transfer" sequence, which results in inverted rib waveguide structures. The shallow-etched 1.8 µm-wide waveguide has a propagation loss of 23.5 dB/cm at 1550 nm wavelength. Supercontinuum generation based on the self-phase modulation effect is observed when the waveguides are pumped by femtosecond pulses. The nonlinear refractive index of GaP, n2, is extracted to be 1.9 × 10-17 m2/W, demonstrating the great promise of the GaP-OI platform in third-order nonlinear applications.

High-efficiency reflector-less dual-level silicon photonic grating coupler

We present the design and experimentally demonstrate a dual-level grating coupler with subdecibel efficiency for a 220 nm thick silicon photonics waveguide which was fabricated starting from a 340 nm silicon-on-insulator wafer. The proposed device consists of two grating levels designed with two different linear apodizations, with opposite chirping signs, and whose period is varied for each scattering unit. A coupling efficiency of −0.8 dB at 1550 nm is experimentally demonstrated, which represents the highest efficiency ever reported in the telecommunications C-band in a single-layer silicon grating structure without the use of any backreflector or index-matching material between the fiber and the grating.

Top-down integration of an hBN quantum emitter in a monolithic photonic waveguide

Integrated quantum photonics, with potential applications in quantum information processing, relies on the integration of quantum emitters into on-chip photonic circuits. Hexagonal boron nitride (hBN) is recognized as a material that is compatible with such implementations, owing to its relatively high refractive index and low losses in the visible range, together with advantageous fabrication techniques. Here, we combine hBN waveguide nanofabrication with the recently demonstrated local generation of quantum emitters using electron irradiation to realize a fully top-down elementary quantum photonic circuit in this material, operating at room temperature. This proof of principle constitutes a first step toward deterministic quantum photonic circuits in hBN.

Controllable hybrid plasmonic integrated circuit

In this paper, a controllable hybrid plasmonic integrated circuit (CHPIC) composed of hybrid plasmonic waveguide (HPW)-based rhombic nano-antenna, polarization beam splitter, coupler, filter, and sensor has been designed and investigated for the first time. In order to control the power into a corresponding input port, a graphene-based 1 × 3 power splitter with switchable output has been exploited. The functionality of each device has been studied comprehensively based on the finite element method and the advantages over state-of-the-art have been compared. Moreover, the effect of connection of CHPIC to the photonic and plasmonic waveguides has been studied to exhibit the capability of variety excitation methods of the CHPIC. Furthermore, the performance of the proposed CHPIC connected to inter/intra wireless transmission links has been investigated. The wireless transmission link consists of two HPW-based nano-antennas as transmitter and receiver with the maximum gain and directivity of 10 dB and 10.2 dBi, respectively, at 193.5 THz. The suggested CHPIC can be used for applications such as optical wireless communication and inter/intra-chip optical interconnects.

A tip-enhanced quantum emitter with integrated TiO2 slot waveguides in the optical regime

We study the coupling between a nanoscopic dielectric slot waveguide and a metallic-tip-enhanced dipole quantum emitter and search for optimal emission and guiding of photons along a titanium dioxide photonic waveguide. Finite element calculations are used to characterize the mode properties of the waveguide over a range of parameters and predict the efficiency of emission guidance along the waveguide. We show how the effective quantum yield is dependent on the waveguide parameters as well as the dipole position and orientation and show that the integrated system can reach a maximum quantum yield of more than 30% along each direction of the waveguide. By placing the dipole emitter near the apex of a silver nanotip situated above or inside the slot waveguide to increase the overall emission rate, we also enable the capability of controlling the emitter–waveguide​ coupling in situ. We numerically compute the excitation and radiation fields and find that despite a reduction in the quantum yield, a 35-fold increase in the overall emission rate can be obtained due to very large field enhancement factors of up to 4000 at the location of the dipole. By using alternative materials for the tip, this tip-enhanced-waveguide approach has the potential of further increasing the guided photon emission rate. With the possibility of controlling emitter–waveguide coupling in situ, this tip-enhanced emitter configuration provides an alternative approach for the realization of an efficient single-photon source.

Observation of delocalization transition in topological waveguide arrays with long-range interactions.

Topological edge states are a generic feature of topological insulators, and the long-range interactions, which break certain properties of topological edge states, are always non-negligible in real physical systems. In this Letter, we investigate the influence of next-nearest-neighbor (NNN) interactions on the topological properties of the Su-Schrieffer-Heeger (SSH) model by extracting the survival probabilities at the boundary of the photonic lattices. By introducing a series of integrated photonic waveguide arrays with different strengths of long-range interactions, we experimentally observe delocalization transition of light in SSH lattices with nontrivial phase, which is in good agreement with our theoretical predictions. The results indicate that the NNN interactions can significantly affect the edge states, and that the localization of these states can be absent in topologically nontrivial phase. Our work provides an alternative way to investigate the interplay between long-range interactions and localized states, which may stimulate further interest in topological properties in relevant structures.

Surface defect effects in AlGaAs-on-Insulator photonic waveguides.

We report on our study of optical losses due to sub-band-gap absorption in AlGaAs-on-Insulator photonic nano-waveguides. Via numerical simulations and optical pump-probe measurements, we find that there is significant free carrier capture and release by defect states. Our measurements of the absorption of these defects point to the prevalence of the well-studied EL2 defect, which forms near oxidized (Al)GaAs surfaces. We couple our experimental data with numerical and analytical models to extract important parameters related to surface states, namely the coefficients of absorption, surface trap density and free carrier lifetime.

Comparative Performance Evaluation of Transparent Conducting Oxides With Different Mobilities for All-Optical Switching in Silicon

All-optical switching is an appealing approach for signal processing, optical communications or sensing systems. In this work, we compare the performance of doped cadmium oxide, aluminum doped zinc oxide, and indium tin oxide as transparent conducting oxide (TCO) materials with different mobilities in thin-film configuration integrated into a hybrid silicon photonic waveguide. Our results reveal the best operational parameters and trade-offs for enabling high-performance and energy-efficient switching by using TCOs with moderate mobility but more environmental-friendly. Extinction ratios of 10 dB∙μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> and insertion losses of 2 dB∙μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> are achieved by an AZO/Si amplitude switch with an energy consumption of only 90 fJ. These results reveal that cadmium-free TCO materials can also be leveraged to build high-performance all-optical switches in silicon.

Local-field and effective-background effects in coupled integrated photonic waveguide systems

The coupling constant between two nearby waveguides is usually predicted using formulas derived from the perturbative theory applied to the electromagnetic Maxwell equations. These formulas, however, fail to provide any reliable estimate when the index contrast between the core of the waveguide and its cladding becomes large. We demonstrate in this paper that a good accuracy can be retrieved if the local field effect is taken into account. Moreover, we show that in case of structured and inhomogeneous cladding, an effective background index must be taken into account so that the local field effect correction remains accurate. This theoretical study is the occasion for physics-oriented discussions regarding the impact of the substrate on the interwaveguide coupling constant.

Optical Reading of Nanoscale Magnetic Bits in an Integrated Photonic Platform

In this paper, we propose a compact integrated hybrid plasmonic-photonic device for optical reading of nanoscale magnetic bits with perpendicular magnetic anisotropy in a magnetic racetrack on top of a photonic waveguide on the indium phosphide membrane on silicon platform. The hybrid device is constructed by coupling a doublet of V-shaped gold plasmonic nanoantennas on top of the indium phosphide waveguide. By taking advantage of the localized surface plasmons, our hybrid device can enable detection of the magnetization state in magnetic bits beyond the diffraction limit of light and enhance the polar magneto-optical Kerr effect (PMOKE). We further illustrate how combining the hybrid device with a plasmonic polarization rotator provides magneto-optical read-out by transforming the PMOKE-induced polarization change into an intensity variation of the waveguide mode. According to the simulation results based on a three-dimensional finite-difference time-domain method, the hybrid device can detect the magnetization states in targeted bits in a magnetic racetrack medium down to ~ 100x100 nm2, regardless of the magnetization state of the rest of the racetrack with a relative intensity contrast of greater than 0.5% for a ~ 200x100 nm2 magnetic bit. We believe our hybrid device can be an enabling technology that can connect integrated photonics with nanoscale spintronics, paving the way toward ultrafast and energy efficient advanced on-chip applications.

Transport of a topologically protected photonic waveguide on-chip

We propose a design on integrated optical devices on-chip with an extra width degree of freedom by using a photonic crystal waveguide with Dirac points between two photonic crystals with opposite valley Chern numbers. With such an extra waveguide, we demonstrate numerically that the topologically protected photonic waveguide retains properties of valley-locking and immunity to defects. Due to the design flexibility of the width-tunable topologically protected photonic waveguide, many unique on-chip integrated devices have been proposed, such as energy concentrators with a concentration efficiency improvement of more than one order of magnitude, and a topological photonic power splitter with an arbitrary power splitting ratio. The topologically protected photonic waveguide with the width degree of freedom could be beneficial for scaling up photonic devices, and provides a flexible platform to implement integrated photonic networks on-chip.

Efficient coupling between free electrons and the supermode of a silicon slot waveguide.

Laser light can modulate the kinetic energy spectrum of free electrons and induce extremely high acceleration gradients, which are instrumental to electron microscopy and electron acceleration, respectively. We present a design scheme for a silicon photonic slot waveguide which hosts a supermode to interact with free electrons. The efficiency of this interaction relies on the coupling strength per photon along the interaction length. We predict an optimum value of 0.4266, resulting in the maximum energy gain of 28.27 keV for an optical pulse energy of only 0.22 nJ and duration 1 ps. The acceleration gradient is 1.05 GeV/m, which is lower than the maximum imposed by the damage threshold of Si waveguides. Our scheme shows how the coupling efficiency and energy gain can be maximized without maximizing the acceleration gradient. It highlights the potential of silicon photonics technology in hosting electron-photon interactions with direct applications in free-electron acceleration, radiation sources, and quantum information science.

Experimental Observation of Dissipatively Coupled Bound States in the Continuum on an Integrated Photonic Platform

AbstractBound states in the continuum (BICs) are a special type of waves that coexist with continuous waves without any radiation loss. Owing to eliminated dissipative coupling to the environment, the coupling between BICs is naturally considered to be dispersive. Here, dissipative coupling between BICs in coupled photonic waveguides is exploited on an etchless lithium niobate integrated platform, and for the first time, supermode BICs are experimentally observed on a chip. It is discovered that, under the variation of the waveguide gap, the two supermodes have complementarily varied loss rates and the supermode BIC appears periodically, which verifies respectively the dissipative nature of coupling and periodic variation of the coupling coefficient between the two coupled photonic waveguides. The observed dissipatively coupled BICs can enable many on‐chip applications such as high‐sensitivity sensing, optical communication, and topological physics.

Floquet engineering of the non-Hermitian skin effect in photonic waveguide arrays

The non-Hermitian skin effect (NHSE), which involves an extensive number of bulk modes collapsing to open boundaries as skin modes, unveils a variety of unprecedented topological physics. However, achieving this effect in photonic waveguides has been challenging due to the difficulty of establishing the required non-Hermitian asymmetric couplings. Here, we investigate NHSE in photonic waveguide arrays via Floquet engineering. By periodically driving the waveguides along the propagation direction, we create an artificial gauge field (AGF) that interacts with on-site dissipation, yielding non-Hermitian asymmetric coupling and eventually giving rise to NHSE. The localization direction of NHSE is tunable by AGFs and can be detected from light propagation. In particular, we explore the interplay between NHSE and dynamical localization, whereby NHSE is suppressed by dynamical localization due to the collapse of quasienergies. Our proposed method can be extended to explore the non-Bloch Su-Schrieffer--Heeger model, with potential implications for steering light transport with the aid of NHSE.

Emission enhancement of erbium in a reverse nanofocusing waveguide

Since Purcell’s seminal report 75 years ago, electromagnetic resonators have been used to control light-matter interactions to make brighter radiation sources and unleash unprecedented control over quantum states of light and matter. Indeed, optical resonators such as microcavities and plasmonic antennas offer excellent control but only over a limited spectral range. Strategies to mutually tune and match emission and resonator frequency are often required, which is intricate and precludes the possibility of enhancing multiple transitions simultaneously. In this letter, we report a strong radiative emission rate enhancement of Er3+-ions across the telecommunications C-band in a single plasmonic waveguide based on the Purcell effect. Our gap waveguide uses a reverse nanofocusing approach to efficiently enhance, extract and guide emission from the nanoscale to a photonic waveguide while keeping plasmonic losses at a minimum. Remarkably, the large and broadband Purcell enhancement allows us to resolve Stark-split electric dipole transitions, which are typically only observed under cryogenic conditions. Simultaneous radiative emission enhancement of multiple quantum states is of great interest for photonic quantum networks and on-chip data communications.

Single quantum dot selection and tailor-made photonic device integration using nanoscale focus pinspot.

Among the diverse platforms of quantum light sources, epitaxially grown semiconductor quantum dots (QDs) are one of the most attractive workhorses for realizing quantum photonic technologies owing to their outstanding brightness and scalability. However, the spatial and spectral randomness of most QDs severely hinders the construction of large-scale photonic platforms. In this work, we present a methodology to deterministically integrate single QDs with tailor-made photonic structures. We apply a nondestructive luminescence picking method termed as nanoscale focus pinspot (NFP) using helium ion microscopy to reduce the luminous QD density while retaining the surrounding medium. We extract only a single QD emission out of the high-density ensemble QDs. Then the tailor-made photonic structure of a circular Bragg reflectors (CBR) are designed and deterministically integrated with the selected QD. Given that the microscopy can image with nanoscale resolution and apply NFP in situ, photonic devices can be deterministically fabricated on target QDs. The extraction efficiency of the NFP-selected QD emission is improved by 25 times after the CBR integration. Since the NFP method only controls the luminescence without destroying the medium, it is applicable to various photonic structures such as photonic waveguides or photonic crystal cavities regardless of materials. This article is protected by copyright. All rights reserved.

Near-zero-index platform in photonics: tutorial

The need for miniaturization and faster communications resulted in the rise of photonics, with the big promise of light circuits with high speed and low heating. Near-zero-index materials have gained attention due to their peculiar electromagnetic properties, such as enhancement of the electric field and extraordinary transmission inside photonic waveguides. Furthermore, in such a medium, light propagates with constant phase, thus holding great promise for the field of quantum photonics, where information is preserved instead of degraded by the environment, causing decoherence. However, its realization still remains challenging, as it requires very specific geometries to fulfill some requirements related to the effective medium theory. In this tutorial, we present a theoretical overview of low-index materials’ most intriguing yet useful characteristics and their prospective applications.

Excitation of surface plasmon mode in bulk semiconductor lasers.

We propose a realistic process for the excitation of surface plasmon polariton (SPP) modes in a silicon photonic waveguide (WG). The process involves the placement of buried oxide (BOX) composed of silica between a WG and silicon substrate. When the BOX thickness is manipulated, different amounts of modal power leak toward the BOX into the substrate and simultaneously acquire compensation from a semiconductor located on the WG. The compensation related to the leakage can be used to infer transparency gain. Similar to the case for a semiconductor laser cavity, the lowest transparency gain among WG modes can be favored; thus, only one mode can survive in the WG, and it is in the region with the specified BOX thickness. Finally, we propose a credible mechanism suitable for demonstrating the region requirements of the existence of SPP modes.