A single SiC NW-FET (nanowire field effect transistor) was fabricated by FIB (Focus-Ion-Beam) method and the photo-electric properties of the device including I-V characteristic, transfer characteristic and time response et.al. were studied in this paper. SiC NWs (NWs) were prepared by pyrolysis of a polymer precursor with ferrocene as the catalyst by a CVD route. The NWs were suspended in ethanol by ultrasonic, then sprayed onto a silicon wafer with 300nm silicon oxide. Pt electrodes were deposited directly by FEI NanoLab 600i along with the SiC NW on silicon wafer. The transfer characteristic of the device shows that the SiC NW is a n-type semiconductor and photoelectrical measurements of the device show an rapid change of voltage when applied a constant current and explored the device to 254nm UV light. The mechanism of photo-electric properties are discussed in the last. Our results show that the single SiC NW FET could be applied to a harsh environment due to its own excellent electrical and optical properties.