Abstract
A new photoelectric method for rapid diagnostics of light-emitting diodes (LEDs) based on InGaN/GaN multiple quantum well (QW) heterostructures has been developed. An automated setup has been created for determining the arrangement of QWs in heterostructures, quality of interfaces, and degree of charge carrier localization in QWs using the results of room-temperature photoelectric measurements. The diagnostics of one heterostructure takes fractions of a second. The proposed method has advantages over the widely used technique based on the capacitance-voltage profiling of QW structures.
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