Photoconductive Detectors Research Articles

Band Gap Engineering of Amorphous MgSnO Film for Deep-Ultraviolet Photodetection

Deep-ultraviolet (DUV) detectors have great application prospects in many fields. In this letter, after Sn was doped in MgO by magnetron sputtering, a band gap regulation of the MgSnO from 4.13 eV to 4.67 eV was conducted with a good absorption coefficient for deep-ultraviolet light realized. On this MgSnO film obtained, interdigital electrodes were constructed via mask evaporation technique, based on which a photoconductive deep-ultraviolet detector with metal-semiconductor-metal structure was fabricated. This detector has exhibited excellent characteristics, including low dark current (10−9 A), relatively-high switching ratios (102), ultra-high responsivity (5.87 A/W) and a superior external quantum efficiency (3937%) under 10 V bias.

Preparation and ultraviolet detection performance of Cu doped <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> thin films

Solar-blind UV photodetectors (SBPs) have attracted great attention because they are widely used in missile tracking, fire detection, biochemical analysis, astronomical observations, space-to-space communications, etc. At present, it is found that wide bandgap semiconductor materials such as Al<sub><i>x</i></sub>Ga<sub>1-<i>x</i></sub>N, Mg<sub>1</sub>Zn<sub>1-<i>x</i></sub>O, diamond and <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> are ideal semiconductor materials for developing high-performance SBPs. The ultra-wide band gap semiconductor material, <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>, has a large band gap width of 4.9 eV, strong breakdown electric field, absorption edge located in the solar blind ultraviolet band (200–280 nm), and it also has high transmittance in the near ultraviolet and the whole visible band. Therefore, <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> is a very suitable material for making solar blind UV photodetectors. However, the p-type <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> is difficult to dope, which limits the further development of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> devices. In this work, the <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> thin films with different Cu doping content are grown on sapphire substrates by chemical vapor deposition method, and the morphology, crystal structure and optical properties of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> films are measured. The test results show that the surfaces of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> films with different Cu content are relatively smooth, and the (<inline-formula><tex-math id="M2">\begin{document}$ \bar 201 $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="19-20230971_M2.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="19-20230971_M2.png"/></alternatives></inline-formula>) diffraction peak positions shift toward the lower degree side with the increase of Cu content, which indicates that Cu<sup>2+</sup> replaces Ga<sup>3+</sup> and enters into the <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> lattice. The optical absorption spectrum measurement indicates that the energy gaps of samples are evidently narrowed with the increase of Cu doping concentration. Hall measurements indicate that the Cu doped <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> thin films have a p-type conductivity with a hole concentration of 7.36 × 10<sup>14</sup>, 4.83 × 10<sup>15</sup> and 1.69 × 10<sup>16 </sup>cm<sup>–3</sup>, respectively. In addition, a photoconductive UV detector with metal-semiconductor-metal structure is prepared by evaporating Au on a Cu-doped <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> thin film, and its UV detection performance is studied. The results show that the photocurrent value of the device increases with Cu content increasing. The photo-to-dark current ratio (<i>I</i><sub>l</sub>/<i>I</i><sub>d</sub>) is about 3.8×10<sup>2</sup> of 2.4% Cu content device under 254 nm-wavelength light at 10 V. The rise time and decay time are 0.11 s and 0.13 s, respectively. Furthermore, the responsivity and external quantum efficiency can reach 1.72 A/W and 841% under 254 nm-wavelength light with a light intensity of 64 μW/cm<sup>2</sup>.

Graphene nanowalls in photodetectors.

Graphene nanowalls (GNWs) have emerged as a promising material in the field of photodetection, thanks to their exceptional optical, electrical, mechanical, and thermodynamic properties. However, the lack of a comprehensive review in this domain hinders the understanding of GNWs' development and potential applications. This review aims to provide a systematic summary and analysis of the current research status and challenges in GNW-based photodetectors. We begin by outlining the growth mechanisms and methods of GNWs, followed by a discussion on their physical properties. Next, we categorize and analyze the latest research progress in GNW photodetectors, focusing on photovoltaic, photoconductive, and photothermal detectors. Lastly, we offer a summary and outlook, identifying potential challenges and outlining industry development directions. This review serves as a valuable reference for researchers and industry professionals in understanding and exploring the opportunities of GNW materials in photodetection.

Photoconductive Detector Based on Graphene Doping with Silver Nanoparticles

Graphene (Gr) decorated with silver nanoparticles (Ag NPs) were used to fabricate a wideband range photodetector. Silicon (Si) and porous silicon (PS) were used as a substrate to deposit Gr /Ag NPs by drop-casting technique. Silver nanoparticles (Ag NPs) were prepared using the chemical method. As well as the dispersion of silver NPs is achieved by a simple chemistry process on the surface of Gr. The optical, structure and electrical characteristics of AgNPs and Gr decorated with Ag NPs were characterized by ultraviolet-visible spectroscopy (UV-Vis), x-ray diffraction (XRD). The X-ray diffraction (XRD) spectrum of Ag NPs exhibited 2θ values (38.1o, 44.3 o, 64.5 o and 77.7 o) corresponding to the silver nanocrystal, while the XRD pattern of Gr-Ag NPs shows two distinct diffraction peaks at 2 θ = 26.2°and 54.7 which correspond to the (002), and (110). The absorption spectrum of Gr-AgNPs extended from UV to near IR region, surface plasmon resonance (SPR) absorption peak position for the AgNPs at (~320-480) nm. The I-V characteristics for the photoconductive detector on Si were measured with three sources: UV, visible, and IR. The photocurrent increased under the illumination of UV light (10W, 365nm), a Tungsten lamp (250W, 500-800nm), and a laser diode (300mW, 808nm). The I-V characteristics for the photoconductive detector on PS were measured with three sources: UV, Visible, and IR. Furthermore, we coated polyamide-nylon polymer on Gr/Ag NPs samples deposited on a Si and PS layer by the drop-casting method the results show that the photocurrent increased for all samples.

Strongly Anisotropic Quasi‐1D BaTiS3 Chalcogenide Perovskite for Near‐Infrared Polarized Photodetection

AbstractOne‐dimensional (1D) crystal‐structural materials have attracted extensive attention for polarization detection because of the strong anisotropy. Barium titanium sulfide (BaTiS3), a quasi‐1D chalcogenide perovskite, demonstrates a great potential for polarization detection stemming from the giant optical anisotropy. Whereas, the photoelectric properties of BaTiS3 and its direct application in polarized photodetector are less studied. Herein, quasi‐1D BaTiS3 is introduced in polarized photodetection for the first time. The needle‐like BaTiS3 single crystals are successfully prepared by a modified chemical vapor transport process. The BaTiS3 single crystal demonstrates a narrow bandgap of 0.8 eV, an n‐type intrinsic conductivity, and a more than 300 cm2 V−1 s−1 mobility along the c‐axis. Then, an Ag/BaTiS3/Ag photoconductive detector is fabricated. It shows a broad detection wavelength ranging from visual light to 1550 nm and high responsivity of ≈1.22 A W−1. Moreover, an orthogonal reverse property of polarization photocurrent is observed under the excitation energy of 1.70 eV and 1.96 eV. These comprehensive characteristics can promote the application of the quasi‐1D BaTiS3 in near‐infrared polarized photodetection.

Terahertz Detection Using Enhanced Two‐Step Absorption in Photoconductive Metasurfaces Gated at λ = 1.55 µm

AbstractSuperior ultrafast photoconductive properties make low temperature grown (LT) GaAs one of the best materials for photoconductive terahertz (THz) detection. However, the large bandgap of LT‐GaAs limits its operation to gating at wavelengths shorter than 870 nm. Here, it is demonstrated for the first time that nanostructuring the LT‐GaAs into a highly absorbing metasurface enables THz photoconductive detection with a pulsed laser at λ = 1.55 µm. The very weak sub‐bandgap absorption mediated by midgap states in LT‐GaAs is strongly enhanced using the concept of perfect absorption via degenerate critical coupling. Integrated with a THz antenna, the LT‐GaAs metasurface enables high sensitivity THz detection with a high dynamic range of 60 dB and large bandwidth up to 4.5 THz. The LT‐GaAs metasurface has the potential to serve as a universal ultrafast switching element for THz applications, enabling low‐cost, turn‐key THz systems for a variety of real‐world applications.

Ultraviolet-C Photoresponsivity Using Fabricated TiO2 Thin Films and Transimpedance-Amplifier-Based Test Setup.

We report on fabricated titanium dioxide (TiO2) thin films along with a transimpedance amplifier (TIA) test setup as a photoconductivity detector (sensor) in the ultraviolet-C (UV-C) wavelength region, particularly at 260 nm. TiO2 thin films deposited on high-resistivity undoped silicon-substrate at thicknesses of 100, 500, and 1000 nm exhibited photoresponsivities of 81.6, 55.6, and 19.6 mA/W, respectively, at 30 V bias voltage. Despite improvements in the crystallinity of the thicker films, the decrease in photocurrent, photoconductivity, photoconductance, and photoresponsivity in thicker films is attributed to an increased number of defects. Varying the thickness of the film can, however, be leveraged to control the wavelength response of the detector. Future development of a chip-based portable UV-C detector using TiO2 thin films will open new opportunities for a wide range of applications.

Mid-Infrared Photoconductive Detectors Fabricated from Solution-Processed PbSe Nanocrystals

Lead selenide (PbSe) was the first semiconductor used for photosensors operating in the mid-wavelength infrared spectral region (3-5 um) and is still the primary choice for low-cost, uncooled photoconductive detector applications. Even through PbSe has been studied for over 70 years, more understandings on its physical mechanism for high photoresponsivity is still emerging. Common methods of fabricating PbSe detectors involve physical/chemical vapor deposition or chemical bath deposition (CBD) techniques, followed by post-deposition sensitization processes including oxygen annealing and iodization. Here, we present a new approach to fabricating photoconductive devices based on PbSe colloidal nanocrystals. This infrared colloidal ink can serve as a critical component to enabling digital additive manufacturing of mid-infrared sensor arrays and simultaneously lower the fabrication cost by removing multiple masking steps required in conventional approaches. We report on the synthesis and fabrication of PbSe nanostructured film and the effects of thermal annealing as well as oxygen and iodide incorporation on the photoconductive properties.

Heterojunction structure for suppressing dark current toward high-performance ZnO microrod metal-semiconductor-metal ultraviolet photodetectors

ZnO microrod metal-semiconductor-metal (MSM) photoconductive detectors have generally shown a high photoconductive gain but with a low detectivity owing to the high dark current. Fortunately, the dark current can be suppressed in reverse-biased heterojunctions. In this work, we have reported the fabrication of high-performance MSM ultraviolet photodetectors based on multilayer graphene oxide/ZnO microrod (MLGO/ZnO) heterojunctions. Structural, optical, and electrical properties studies have suggested that the ZnO microrods possessed a high crystalline quality but with a high concentration of defects, which led to a high dark current and low detectivity in the reference ZnO MSM photodetectors. Notably, the dark current has been substantially suppressed by more than 5 orders of magnitude in the MLGO/ZnO heterojunction MSM photodetectors owing to a high potential barrier formed at the MLGO/ZnO heterojunction interface. Finally, the responsivity and detectivity as high as 210 A/W and 3.0 × 1014 Jones, respectively, have been achieved, which are higher than most of the state-of-the-art devices. The results reported in this paper provide a simple and cost-effective approach for the fabrication of high-performance MSM photoconductive detectors.

Bandgap-independent photoconductive detection in two-dimensional Sb2Te3

Broadening the spectral range of photodetectors is vital for photodetection. However, current photoelectric detectors are selective to wavelength, which depends on bandgap, and thermal detectors respond slowly at room temperature. It is challenging to achieve photoconductivity independent of the semiconductor bandgap, which is needed to broaden the spectral range of photodetectors. Here, we use 2D semiconductor Sb2Te3 to develop a photodetector with metal-semiconductor-metal structure for multiband response, covering visible, infrared, terahertz and millimeter wavelengths at room temperature. This is achieved by the synergy of the photoconductivity of photo-excited electron-hole pairs above the bandgap, and an electromagnetic-induced well effect below the bandgap. The photodetector achieves a responsivity of 0.6 A W−1 at 1550 nm, 515 A W−1 at 0.340 THz with a bias of 0.2 V, respectively. The response time is 900 ns, which is short compared to the reported detectors based on 2D materials. In addition, it also exhibits a high polarization extinction ratio of 90. These results suggest that our strategy achieves a photoconductivity independent of the semiconductor bandgap to broaden the spectral range of photodetectors, and could be a strong candidate for multiband photodetection systems.

PbSe Nanosheets for High‐Performance Harmonic Mode Locking

AbstractAs a new emerging semiconductor with interlayer bandgap, lead selenide (PbSe) have broad prospects in the fields of electrocatalysis, photocatalysis, infrared optoelectronic devices, optoelectronics, and ultrafast photonics. Among them, ultrafast photonics is receiving a lot of attention due to its ultrashort pulse, strong peak power, narrow bandwidth, and high repetition frequency. Herein, the properties are systematically studied of PbSe through various characterization methods. The modulation depth of PbSe is up to 30%, and its saturation light intensity is 7.86 MW cm−2. Using the evanescent field effect, nonlinear fiber‐based photonics devices has been successfully prepared based on the PbSe nanosheet solution, which can increase the bearable pump power. The 36th picosecond harmonic mode‐locked soliton molecule is generated in the erbium‐doped fiber laser, which corresponds to a maximum repetition frequency of 222 MHz. The results show that the signal‐to‐noise ratio can reach up to 49.1 dB which is higher than most previous works by now. The results revealed the potential of PbSe as an excellent photonics material in applications such as nonlinear optics, ultrafast photonics equipment, photoconductive detectors, and light modulators.

Photoconductivity on K-feldspar

In the development of most phenomenological models used to explain the infrared excited luminescence, a major assumption is usually made in the degree of freedom the excited charge has. One of the two extremes is normally assumed: charge is free to move anywhere over the whole crystal, or it is confined close to the trap and the centers immediately adjacent to it. Determining which of these extremes is more reasonable is difficult to do on the basis of the temporal behavior of the luminescence intensity alone. However, this assumption has important consequences for the understanding of the dynamics of the luminescence process because of the difference in the number of recombination and trapping centers available to the excited charge. Additional experimental evidence was thus sought on this aspect of charge movement. One such experiment is the detection of photoconductivity in which an electrical current is measured during optical excitation or shortly there-after. In this paper, the details of photoconductivity experiments on K crystal are presented. Photoconductivity measurements were inconclusive as to whether or not there was a current flowing during the 850 nm excitation of a feldspar sample. However, there was a clear current when exciting the same sample with 515 nm light, but there was a complex relationship between the magnitude of the current and the number of emission photons counted. A model was developed to explain the photoconductivity results where electrons migrate through the conduction band aided by thermal excitation and tunneling.

Self-driven highly responsive p-n junction InSe heterostructure near-infrared light detector

Photodetectors converting light signals into detectable photocurrents are ubiquitously in use today. To improve the compactness and performance of next-generation devices and systems, low dimensional materials provide rich physics to engineering the light–matter interaction. Photodetectors based on two-dimensional (2D) material van der Waals heterostructures have shown high responsivity and compact integration capability, mainly in the visible range due to their intrinsic bandgap. The spectral region of near-infrared (NIR) is technologically important, featuring many data communication and sensing applications. While some initial NIR 2D material-based detectors have emerged, demonstrations of doping-junction-based 2D material photodetectors with the capability to harness the charge-separation photovoltaic effect are yet outstanding. Here, we demonstrate a 2D p-n van der Waals heterojunction photodetector constructed by vertically stacking p-type and n-type indium selenide (InSe) flakes. This heterojunction charge-separation-based photodetector shows a threefold enhancement in responsivity in the NIR spectral region (980 nm) as compared to photoconductor detectors based on p- or n-only doped InSe. We show that this junction device exhibits self-powered photodetection operation, exhibits few pA-low dark currents, and is about 3–4 orders of magnitude more efficient than the state-of-the-art foundry-based devices. Such capability opens doors for low noise and low photon flux photodetectors that do not rely on external gain. We further demonstrate millisecond response rates in this sensitive zero-bias voltage regime. Such sensitive photodetection capability in the technologically relevant NIR wavelength region at low form factors holds promise for several applications including wearable biosensors, three-dimensional (3D) sensing, and remote gas sensing.

Fluctuations in the collected charge in integrating photoconductive detectors under small and large signals: the variance problem

Charge collection efficiency (CE) η 0 under small signal conditions, corresponding to a uniform field in the detector medium, has been widely used in evaluating the performance of photoconductive detectors. The present paper answers the question, ‘What is the variance of the collected charge in an integrating detector as a function of photoinjection level and what are the errors if we continue to use the small signal equations?’ The variance in η 0 under small signals has been theoretically derived in the literature and has been a key factor in the detective quantum efficiency modeling of integrating detectors based on various semiconductors. is a noise source and can degrade the detector performance under incomplete charge collection. The statistical variance in the CE η 0, under small signals and the variance in the CE ηr under an arbitrary injection level r (injected charge divided by charge on the electrodes) have been studied using the Monte Carlo simulation model developed in this work to evaluate the difference between and from small to large signals. Initial injection of electron and hole pairs and their subsequent transport and trapping in the presence of an electric field, which is calculated from the Poisson equation, is used to calculate the photocurrent. Each injected carrier is tracked as it moves in the semiconductor until it is either trapped or reaches the collection electrode. Trapped carriers do not contribute to the photocurrent but continue to contribute to the field through the Poisson equation. The instantaneous photocurrent i ph(t) is calculated from the drift of the free carriers through the Shockley–Ramo theorem. i ph(t) is integrated over the duration of the photocurrent to calculate the total collected charge and hence the CE ηr . The variance in ηr is found from multiple simulations of ηr . The ηr and have been generated over varying charge injection ratios r, the electron and hole ranges μτ, mean photoinjection depths δ and drift mobility ratios b. At full injection, the deviation of the CE variance from the uniform field case ( = may be as much as 40% larger or 20% lower than the small signal model prediction. This study provides the extent of errors involved in the variance of the CE in non-uniform fields and quantifies the increase in errors that can occur in high injection cases. In practice, typical injection ratios are less than 0.2, which means that the magnitude of percentage error is less than 5%.

High responsivity solar-blind UV photodetector based on single centimeter-sized Sn-doped β-Ga2O3 microwire

In recent years, wide bandgap β-Ga2O3 semiconductor is considered as a promising UV photodetector material because of its large bandgap, intrinsic solar-blind and high thermal and chemical stabilities. In this paper, a high performance solar-blind UV photodetector based on single Sn-doped Ga2O3 microwire was obtained by a simple method. Using non-toxic mixed powders (SnO2, Ga2O3 and graphite) as source materials, the Sn-doped β-Ga2O3 microwires were successfully prepared using traditional chemical vapor deposition (CVD) technology, and the metal-semiconductor-metal (MSM) photoconductive detector based on Sn-doped single β-Ga2O3 microwire was fabricated. The responsivity and external quantum efficiency can reach up to 12 A/W and 5887% under 254 nm light with a light intensity of 100 μW/cm2 under 10 V. Moreover, single microwire device have a low dark current (1.7 nA), a high Ilight/Idark ratio (2.5 × 103), and a fast rise time and decay time of 0.37 s and 0.25 s, respectively. This work provides a low-cost and feasible method for the preparation of high-performance photodetectors based on the β-Ga2O3 microwires.

Interdigitated photoconductive antenna-based two-color femtosecond laser filamentation THz time-domain spectral detection.

Two-color femtosecond (fs) laser filamentation in the gas medium is an effective way to generate broadband and high intensity terahertz (THz) pulse. The interdigitated photoconductive antenna (iPCA) has the advantages of both broadband detection and high signal-to-noise ratio (SNR), which is a very effective way to detect the THz pulse produced by two-color fs laser filamentation. The THz signal from two-color fs laser filamentation is comprehensively characterized by the iPCA, which achieves high SNR, high sensitivity, and polarization detection. This work provides a new idea for high power broadband THz coherent detection.

New Antenna for Detecting Polarization States of Terahertz

The polarization measurement of terahertz (THz) waves is indispensable in THz time-domain spectroscopy (THz-TDS) applications to detect material properties. The rapid development of accurate THz wave polarization-sensitive detectors will greatly promote THz-TDS applications. A new type of photoconductive antenna array detector is proposed in this paper. The antenna is composed of two vertical 1*2 arrays, which respectively detect the orthogonal component of the terahertz pulse in any direction, while quickly and accurately detecting the polarized THz waves. Rotating the detector to measure the THz electric field at different angles shows the reliability of the detector for THz wave polarization measurement. Its polarization detection accuracy is 0.2°. At the same time, we use the response matrix to analyze the symmetry of the antenna array.

Gate-Controlled NiO/Graphene/4H-SiC Double Schottky Barrier Heterojunction Based on a Metal-Oxide-Semiconductor Structure for Dual-Mode and Wide Range Ultraviolet Detection

Based on a metal-oxide-semiconductor (MOS) structure, a double Schottky barrier junction (SBJ) made of NiO/graphene/4H-SiC is built and employed in ultraviolet (UV) detection. The hole concentration of NiO can be modulated as depleted or accumulated states with gate voltages, which allows the device to work in dual-mode when used as a photodetector. In this work, a negative gate bias causes the device to operate as a photoconductive detector with gain due to the negligible Schottky barrier, whereas a zero or positive gate bias makes it work as a Schottky photodiode. The device has a high responsivity of 103.3 A/W and a gain of 490.8 despite the low light intensity (261 nm laser @ 30.19 μW/cm2) at VDS = 5 V and VGS = −3 V. The NiO layer and SiC substrate both serve as UV absorption materials and produce photogenerated carriers, and the device has a wide UV response range from 240 to 400 nm with a gain of 80.34 when VDS = −3 V and VGS = 0 V at 240 nm. The above findings suggest that this MOS-based NiO/graphene/4H-SiC double SBJ has a great prospect in practical UV detection.

Production and characterization of Tungsten Trioxide nanoparticles on porous silicon as photoconductive detector via pulsed laser deposition

The pulsed laser deposition (PLD) technique has been widely used to prepare and characterize Tungsten Trioxide (WO3) nanoparticles on Porous Silicon (PS) substrate produced on n-type Si (100) wafer using a Nd-YAG laser with a wavelength of 355 nm, a repetition rate of 1 Hz, and various laser ablated energy of 440 mJ, 640 mJ, and 840 mJ at room temperature. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), photoluminescence (PL), Raman spectroscopy, are used to investigate the structural and morphological, electric properties and photodetector of the WO3NPS. In high laser ablated energy of 640 mJ and 840 mJ, the XRD analysis revealed that all of the reflection peaks of WO3 NPS can be triclinic WO3 structure, and they became polycrystalline. The size of surface grains grew larger when the energy pulse was increased. Current-voltage (I-V) measures, the electrical characteristics, like the height of the barrier (ΦB) and ideality factor (n) of Al/WO3NPs/PS/n-Si/Al heterojunction have been determined, as between 1.22 and 4.44 ideality factors. It was found that as the laser energy utilized increases, the photocurrent density decreases. The high responsivity curve from the photodetector device has migrated to the visible area as the energy gap has reduced. When the energy pulse was increased to 800 nm, the quantum efficiency of WO3 NPS photodetectors increased to 89%.

Micro spot ZnO nanotubes using laser assisted chemical bath deposition: A low-cost approach to UV photodetector fabrication

Due to its outstanding characteristics across a wide variety of applications, such as electrical, photonic, electrochemical, and electromechanical devices, one-dimensional Zinc oxide (ZnO) is one of the most promising nanostructures. Using a continuous wave semiconductor laser with a wavelength of 460 nm and a power of 1 W, functional ZnO nanostructures known as nanotubes (NTs) with high-quality structural, optical, and electrical properties on a glass substrate coated with iron (Fe) to construct a UV photoconductive detector with high responsivity were produced for first time by using a simple and quick laser assisted chemical bath deposition (LACBD). X-ray diffractometry (XRD), field emission scanning electron microscopy (FE-SEM), and energy dispersive X-ray (EDX)analyses were used to investigate the evolution of the material's physical and structural characteristics. Our findings revealed that laser-assisted in-situ irradiation of the chemical solution resulted in faster growth of ZnO thin films. To account for the potential of these nanostructures, the effectiveness of ZnO nanotubes (NTs) in ultraviolet (UV) detection has also been investigated. The NT-based photodetector has outstanding stability and responsiveness in both dark and light conditions. Exciton confinement is identified using time-resolved spectroscopy, suggesting that the high surface-to-volume ratio, optical confinement, and high structural quality of the NTs are responsible.