Mid-Infrared Photoconductive Detectors Fabricated from Solution-Processed PbSe Nanocrystals

Abstract

Lead selenide (PbSe) was the first semiconductor used for photosensors operating in the mid-wavelength infrared spectral region (3-5 um) and is still the primary choice for low-cost, uncooled photoconductive detector applications. Even through PbSe has been studied for over 70 years, more understandings on its physical mechanism for high photoresponsivity is still emerging. Common methods of fabricating PbSe detectors involve physical/chemical vapor deposition or chemical bath deposition (CBD) techniques, followed by post-deposition sensitization processes including oxygen annealing and iodization. Here, we present a new approach to fabricating photoconductive devices based on PbSe colloidal nanocrystals. This infrared colloidal ink can serve as a critical component to enabling digital additive manufacturing of mid-infrared sensor arrays and simultaneously lower the fabrication cost by removing multiple masking steps required in conventional approaches. We report on the synthesis and fabrication of PbSe nanostructured film and the effects of thermal annealing as well as oxygen and iodide incorporation on the photoconductive properties.