Photoinduced Current Transient Spectroscopy Research Articles

Manganese diluted TlInS2 layered semiconductor: Optical, electronic and magnetic properties

Manganese–doped TlInS2 (TlInS2+Mn) layered semiconductors with different doping concentrations of about 0.1 and 0.3 at. percent were investigated. Photo–induced current transient spectroscopy (PICTS) measurements in the temperature range of 80 and 300 K have been made for identifying energy levels related to Mn dopant within the electronic bandgap of TlInS2+Mn crystal. Optical absorption spectra in the photon energy range of ∼1.8–3.1 eV have been extracted by fitting the transmittance spectra of TlInS2+Mn recorded at the temperatures varied from ∼40–300 K. A redshift trend of the absorption edge with increasing of temperature was observed. On the other hand, a blue shift in the absorption edge with Mn doping was observed in the absorption spectra. The Mn dopant induced photoluminescence (PL) was also investigated in the visible region ranging from 320 to 960 nm. Seven peaks were observed in the PL spectra of Mn doped TlInS2 crystal in the regions both ∼960–620 nm (∼1.3–2 eV) and ∼620–320 nm (∼2–3.8 eV) due to the electronic states of Mn ions. Laser–induced breakdown spectroscopy (LIBS) technique was applied to establish of the elemental chemical composition and to confirm presence of each constituent element in TlInS2:Mn. The dc magnetization measurements of TlInS2+Mn performed in a wide temperature range of ∼5 and ∼300 K revealed different (diamagnetic and paramagnetic states) magnetic phases inside the studied temperature range. The X–band electron paramagnetic resonance (ESR) experiments were carried out in the low–temperature phase of TlInS2+Mn to probe the structure of Mn centers in TlInS2. The measurements revealed that the ESR spectrum changes drastically in the low–temperature phase of TlInS2+Mn bulk sample. Finally, a detailed density functional theory (DFT) based computational investigation of electronic band structures, density of states and optical properties of TlInS2+Mn compound has been performed. The results of ab–initio calculations are discussed for three possible states when the manganese atom was doped by replacing either the Tl, In or S atoms in the unit cell of TlInS2. Additionally, the effect of interstitial Mn dopant on the electronic structure and optical properties of TlInS2 material has been simulated.

Radiation Hardness and Defects Activity in PEA2PbBr4 Single Crystals

AbstractMetal halide perovskites (MHPs) are low‐temperature processable hybrid semiconductor materials with exceptional performances that are revolutionizing the field of optoelectronic devices. Despite their great potential, commercial deployment is hindered by MHPs lack of stability and durability, mainly attributed to ion migration and chemical interactions with the electrodes. To address these issues, 2D layered MHPs are investigated as possible device interlayers or active material substitutes. Here, the 2D perovskite (PEA)2PbBr4 is considered that is recently discussed as promising candidate for X‐ray direct detection. While the increased resilience of (PEA)2PbBr4 radiation detectors has already been reported, the physical mechanisms responsible for such improvement compared to 3D perovskites are not still fully understood. To unravel the charge transport process in (PEA)2PbBr4 crystals thought to underly the device better performance, an investigation technique is adapted previously used on highly resistive inorganic semiconductors, called photo induced current transient spectroscopy (PICTS). It is demonstrated that PICTS can reliably detect three trap states (T1, T2, and T3), and that their evolution upon X‐ray exposure can explain (PEA)2PbBr4 superior radiation tolerance and reduced aging effects. Overall, the results provide essential insights into the electrical characteristics of 2D perovskites and their potential application as reliable direct X‐ray detectors.

Attaining quantitatively fewer defects in close-packed InGaZnO synthesized using atomic layer deposition

Owing to their uniformity across large areas, low-temperature processability, and low off-current characteristics, oxide semiconductors demonstrate significant potential for integration into displays, memories, and logic devices. In the hyper scaling era, atomic layer deposition (ALD) is well suited for downsizing device fabrication, leveraging self-limiting chemical reactions to provide nanoscale control, and conformal coating on substrates with high aspect ratios. Hence, in this study, we fabricated highly oriented c-axis-aligned crystalline (CAAC) indium-gallium-zinc oxide (IGZO) thin films using plasma-enhanced ALD (PEALD), introducing an additional thermodynamic driving force for crystallization. A comparative study was conducted on the properties of CAAC-IGZO in correspondence to conventional sputter-based IGZO. In particular, photo-induced current transient spectroscopy (PICTS) is employed to map the electronic structure (density of states (DOS)) of the films, which quantitatively confirmed fewer defects in CAAC-IGZO. Fewer defects result in highly stable CAAC-IGZO transistors with positive bias stress threshold (PBTS) at 0.03 V and negative bias stress threshold (NBTS) at - 0.06 V. Thus, this research on thermally and electrically stable CAAC-IGZO synthesized at low temperatures through PEALD offers insights into the processing and material perspectives for the application of oxide semiconductors in 3D integration.

Deep-Level Structure of the Spin-Active Recombination Center in Dilute Nitrides.

A gallium interstitial defect is thought to be responsible for the spectacular spin-dependent recombination in GaAs_{1-x}N_{x} dilute nitrides. Current understanding associates this defect with at least two in-gap levels corresponding to the (+/0) and (++/+) charge-state transitions. Using a spin-sensitive photoinduced current transient spectroscopy, the in-gap electronic structure of a x=0.021 alloy is revealed. The (+/0) state lies ≈0.27 eV below the conduction band edge, and an anomalous, negative activation energy reveals the presence of not one but two other in-gap states. The observations are consistent with a (++/+) state ≈0.19 eV above the valence band edge, and a (+++/++) state ≈25 meV above the valence band edge.

Tracking deep-level defects in degrading perovskite solar cells with a multifactorial approach

In this work, we provide a mechanistic understanding of the degradation of perovskite solar cells in operation by focusing on methylammonium lead triiodide (CH3NH3PbI3 or MAPbI3) and tracking the evolution of electronic defects via photo-induced current transient spectroscopy (PICTS). Moreover, we also record the degradation of its photovaltaic characteristics over time under various electric load and temperature conditions. Using PICTS, we found that bands of trap states, initially highly localized deep within the band gap of the perovskite, widened over the exposure period. This effect was exacerbated with increasing temperature. Further, using the design of experiment methodology for this multifactorial study, we found that two interaction factors (temperature× load & temperature× time) were significant in the degradation of the perovskite cells, validating the importance of our holistic approach. Through these observations, we establish a mechanistic link between deep-level traps and photovoltaic characteristics.

Photoinduced Current Transient Spectroscopy on Metal Halide Perovskites: Electron Trapping and Ion Drift.

Metal halide perovskites (MHPs) are disruptive materials for a vast class of optoelectronic devices. The presence of electronic trap states has been a tough challenge in terms of characterization and thus mitigation. Many attempts based on electronic spectroscopies have been tested, but due to the mixed electronic-ionic nature of MHP conductivity, many experimental results retain a large ambiguity in resolving electronic and ionic charge contributions. Here we adapt a method, previously used in highly resistive inorganic semiconductors, called photoinduced current transient spectroscopy (PICTS) on lead bromide 2D-like ((PEA)2PbBr4) and standard "3D" (MAPbBr3) MHP single crystals. We present two conceptually different outcomes of the PICTS measurements, distinguishing the different electronic and ionic contributions to the photocurrents based on the different ion drift of the two materials. Our experiments unveil deep level trap states on the 2D, "ion-frozen" (PEA)2PbBr4 and set new boundaries for the applicability of PICTS on 3D MHPs.

Quantitative analysis of defect states in InGaZnO within 2 eV below the conduction band via photo-induced current transient spectroscopy

This work investigates the function of the oxygen partial pressure in photo-induced current measurement of extended defect properties related to the distribution and quantity of defect states in electronic structures. The Fermi level was adjusted by applying a negative gate bias in the TFT structure, and the measurable range of activation energy was extended to < 2.0 eV. Calculations based on density functional theory are used to investigate the changes in defect characteristics and the role of defects at shallow and deep levels as a function of oxygen partial pressure. Device characteristics, such as mobility and threshold voltage shift under a negative gate bias, showed a linear correlation with the ratio of shallow level to deep level defect density. Shallow level and deep level defects are organically related, and both defects must be considered when understanding device characteristics.

Assessment of deep levels with selenium concentration in Cd1–xZnxTe1–ySey room temperature detector materials

Incorporation of Se into Cd1−xZnxTe (CZT) to form the quaternary compound semiconductor Cd1−xZnxTe1–ySey (CZTS) has proven to be an effective solution for compensating the major flaws associated with CZT, including poor homogeneity and high concentrations of electronically active deep levels that limit the performance of CZT detectors. In order to investigate how deep levels are affected by the Se concentration in CZTS, we performed photoinduced current transient spectroscopy (PICTS) measurements on CZTS crystals grown by the traveling heater method (THM) with 10% atomic Zn and varying atomic percentage of Se from 1.5% to 7.0%. The PICTS scans for up to 4% Se showed an exponential reduction in the capture cross section of deep levels associated with Te secondary phases in conjunction with an increase in a deep level positioned near the mid-gap, which initially increases the electron trapping time before degrading again at higher Se concentrations. The PICTS peaks present in 7% Se were anomalous relative to the other crystals and are expected to originate from transition metal impurities found in the lower-purity CdSe precursor material.

Point defect creation by proton and carbon irradiation of α-Ga2O3

Films of α-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) were irradiated with protons at energies of 330, 400, and 460 keV with fluences 6 × 1015 cm−2 and with 7 MeV C4+ ions with a fluence of 1.3 × 1013 cm−2 and characterized by a suite of measurements, including Photoinduced Transient Current Spectroscopy (PICTS), Thermally Stimulated Current (TSC), Microcathodoluminescence (MCL), Capacitance–frequency (C–f), photocapacitance and Admittance Spectroscopy (AS), as well as by Positron Annihilation Spectroscopy (PAS). Proton irradiation creates a conducting layer near the peak of the ion distribution and vacancy defects distribution and introduces deep traps at Ec-0.25, 0.8, and 1.4 eV associated with Ga interstitials, gallium–oxygen divacancies VGa–VO, and oxygen vacancies VO. Similar defects were observed in C implanted samples. The PAS results can also be interpreted by assuming that the observed changes are due to the introduction of VGa and VGa–VO.

Electrical properties of α-Ga2O3 films grown by halide vapor phase epitaxy on sapphire with α-Cr2O3 buffers

We report on growth and electrical properties of α-Ga2O3 films prepared by halide vapor phase epitaxy (HVPE) at 500 °C on α-Cr2O3 buffers predeposited on sapphire by magnetron sputtering. The α-Cr2O3 buffers showed a wide microcathodoluminescence (MCL) peak near 350 nm corresponding to the α-Cr2O3 bandgap and a sharp MCL line near 700 nm due to the Cr+ intracenter transition. Ohmic contacts to Cr2O3 were made with both Ti/Au or Ni, producing linear current–voltage (I–V) characteristics over a wide temperature range with an activation energy of conductivity of ∼75 meV. The sign of thermoelectric power indicated p-type conductivity of the buffers. Sn-doped, 2-μm-thick α-Ga2O3 films prepared on this buffer by HVPE showed donor ionization energies of 0.2–0.25 eV, while undoped films were resistive with the Fermi level pinned at EC of 0.3 eV. The I–V and capacitance–voltage (C–V) characteristics of Ni Schottky diodes on Sn-doped samples using a Cr2O3 buffer indicated the presence of two face-to-face junctions, one between n-Ga2O3 and p-Cr2O3, the other due to the Ni Schottky diode with n-Ga2O3. The spectral dependence of the photocurrent measured on the structure showed the presence of three major deep traps with optical ionization thresholds near 1.3, 2, and 2.8 eV. Photoinduced current transient spectroscopy spectra of the structures were dominated by deep traps with an ionization energy of 0.95 eV. These experiments suggest another pathway to obtain p–n heterojunctions in the α-Ga2O3 system.

Deep levels related to the carbon antisite–vacancy pair in 4H-SiC

Photo-induced current transient spectroscopy (PICTS) and electron paramagnetic resonance (EPR) are used to study irradiation-induced defects in high-purity semi-insulating (HPSI) 4H-SiC. Several deep levels with the ionization energy ranging from 0.1 to ∼1.1 eV have been observed in irradiated and annealed samples by PICTS. Among these, two deep levels, labeled E370 and E700 at ∼0.72 and ∼1.07 eV below the conduction band, respectively, are detected after high-temperature annealing. The appearance and disappearance of these two deep levels and the EPR signal of the positive C antisite–vacancy pair (CSiVC+) in the sample annealed at 1000 and 1200 °C, respectively, are well correlated. Based on data from PICTS and EPR and the energies predicted by previous calculations for different charge states of dominant intrinsic defects, the E370 and E700 levels are suggested to be related to the charge transition levels (0|–) and (+|0), respectively, of the C antisite–vacancy pair. The activation energy of Ea ∼ 1.1 eV in commercial HPSI 4H-SiC materials is, therefore, reassigned to be related to the single donor (+|0) level of CSiVC.

Quantitative analysis of defect states in amorphous InGaZnO thin-film transistors using photoinduced current transient spectroscopy

The device and defect characteristics of amorphous indium–gallium–zinc oxide (In:Ga:Zn = 1:1:1 at.%) thin-film transistors (TFTs) as a function of the oxygen partial pressure were investigated. It was found that as the oxygen partial pressure increased, the field effect mobility decreased, the threshold voltage saw a positive shift, and this shift of threshold voltage increased under a negative gate bias stress. From our qualitative analysis of defect states below the conduction band, it was found that as the oxygen partial pressure increased, defect states in the shallow levels decreased, while defect states in the deep levels increased. A quantitative analysis of the defect states in the TFT structures was conducted using photoinduced current transient spectroscopy. It was found that as the oxygen partial pressure used during fabrication of the TFTs increased from 0% to 10% to 60%, the defect states in the shallow levels decreased from 2.74 × 1018 to 2.93 × 1017 to 3.55 × 1016 cm−3, while the defect states in the deep levels increased from non-availability to 1.86 × 1016 to 3.25 × 1016 cm−3. As the oxygen partial pressure increased, the decrease in shallow level defect density is strongly related to a decrease in carrier concentration; the increase in deep level defect density affects the mobility and causes device instability.

Photoinduced Current Transient Spectroscopy: Assessing the Impact of Defects on Lead‐Free Perovskite‐Inspired Photovoltaics via Photoinduced Current Transient Spectroscopy (Adv. Energy Mater. 22/2021)

Photoinduced Current Transient Spectroscopy: Assessing the Impact of Defects on Lead‐Free Perovskite‐Inspired Photovoltaics via Photoinduced Current Transient Spectroscopy (Adv. Energy Mater. 22/2021)

Characterization and role of deep traps on the radio frequency performances of high resistivity substrates

In this study, high-resistivity gold-implanted silicon substrates developed for radio frequency (RF) applications were characterized. By varying PICTS (Photo-Induced Current Transient Spectroscopy) measurement conditions such as the illumination wavelength, we identified the signature and the nature of four dominant traps. Two were electron traps and the others were hole traps. All of the related defects involved gold atoms. RF simulations of coplanar waveguide transmission lines integrated on these substrates were carried out, based on the trap properties extracted from PICTS results. A good agreement between RF experimental data and simulations was achieved by tuning the trap concentrations. Finally, the gold density extracted from the fit was successfully compared with the secondary ion mass spectrometry profile and an explanation of the role of the traps in RF behavior of the substrate was given.

Assessing the Impact of Defects on Lead‐Free Perovskite‐Inspired Photovoltaics via Photoinduced Current Transient Spectroscopy

AbstractThe formidable rise of lead‐halide perovskite photovoltaics has energized the search for lead‐free perovskite‐inspired materials (PIMs) with related optoelectronic properties but free from toxicity limitations. The photovoltaic performance of PIMs closely depends on their defect tolerance. However, a comprehensive experimental characterization of their defect‐level parameters—concentration, energy depth, and capture cross‐section—has not been pursued to date, hindering the rational development of defect‐tolerant PIMs. While mainstream, capacitance‐based techniques for defect‐level characterization have sparked controversy in lead‐halide perovskite research, their use on PIMs is also problematic due to their typical near‐intrinsic character. This study demonstrates on four representative PIMs (Cs3Sb2I9, Rb3Sb2I9, BiOI, and AgBiI4) for which Photoinduced Current Transient Spectroscopy (PICTS) offers a facile, widely applicable route to the defect‐level characterization of PIMs embedded within solar cells. Going beyond the ambiguities of the current discussion of defect tolerance, a methodology is also presented to quantitatively assess the defect tolerance of PIMs in photovoltaics based on their experimental defect‐level parameters. Finally, PICTS applied to PIM photovoltaics is revealed to be ultimately sensitive to defect‐level concentrations &lt;1 ppb. Therefore, this study provides a versatile platform for the defect‐level characterization of PIMs and related absorbers, which can catalyze the development of green, high‐performance photovoltaics.

Effects of oxygen plasma treatment on Cd[formula omitted]Zn[formula omitted]Te material and devices

Surface passivation in detectors is designed to improve the performance and stabilize the characteristics over time and ambient. In Cd1−xZnxTe radiation detectors, oxidation by plasma is a well-known passivation method, but its physics is not fully understood. This study focuses on the macroscopic and microscopic effects of plasma treatment. It is shown that plasma oxidation before contact deposition causes a considerable decrease in the device’s dark current and that this reduction is in a strong correlation with the lowering of the surface potential. X-ray photoelectron spectroscopy (XPS) measurements revealed a significant increase in TeO 2 fraction on the plasma-treated surface. The main conclusion of this study is that the plasma-related effects are not confined to the surface layer. Furthermore, the deep penetration of plasma treatment byproduct takes place over long time periods, which may lead to variations in device characteristics. The effects were corroborated by several characterization techniques. DC current–voltage measurements combined with layer-by-layer stripping indicate plasma signature deep into the bulk. Transient current technique (TCT) results demonstrate that the plasma treatment affects the electric field distribution millimeters into the bulk. Photo-induced current transient spectroscopy (PICTS) and thermoelectric emission spectroscopy (TEES) measurements reveal plasma-related traps in-depth of the CdZnTe crystals.

The mechanism of defects effect on carrier transport by employing multi-wavelength sub-bandgap lights on CdZnTe crystal

The effect of different point defects in CdZnTe (CZT) crystals on carrier transport performance were discussed. The energy level and concentration of the traps were determined by the photo-induced current transient spectroscopy (PICTS). By adding the infrared light illumination into the PICTS experiment, the effect of sub-bandgap light on defects was observed. Meanwhile, several DC photoconductive experiments were done under different wavelength lights were used to explore the effect of the different defects on carrier transport properties of CZT crystals. Furthermore, the energy spectrum test was used to investigate the effect of sub-bandgap light on the energy resolution of CZT detectors. The data results showed that sub-bandgap light could effectively change the ionization state of defects. The doubly ionized Te antisite (TeCd2+) had the greatest effect on mobility-lifetime product(μτ) of electrons owing to its stronger ability of capturing electrons and energy level located around the midgap. While the secondary ionized Cd vacancy (VCd2−), as considered as a hole trap, had the greatest effect on μτ-product of holes. Consequently, choosing suitable infrared light can improve the detection performance of CZT crystal effectively.

Quantification of point and line defects in Si0.6Ge0.4 alloys with thickness variation via optical pump-THz probe measurement

Measuring defect density through non-contact, non-destructive methods without any additional sample processing has been of great interest in both academia and industry. In this study, we propose a new method to quantify the point and line defect densities of Si0.6Ge0.4 films by using the recombination time of the photoexcited carrier, as well as the optical pump THz probe method (OPTP). The change in the crystallinity of Si0.6Ge0.4 obtained from various measurements was consistent with the recombination time of the point- and line-defect states in OPTP, which changed from 107 ps to 172 ps and from 3961 ps to 870 ps, respectively. The actual defect density of each sample was extracted from photoinduced current transient spectroscopy (PICTS) for comparison with the recombination time. In addition, the non-Drude behavior of the photoexcited carrier was analyzed using two-dimensional terahertz time-domain spectroscopy (2D-TDS), which corresponds with previous measurement tools. The quantification methodology proposed in this study is expected to be advantageous to both academia and industry, as it will enable fast and accurate analysis of defects without requiring further sample processing.

Electronic Structure and Optoelectronic Properties of Bismuth Oxyiodide Robust against Percent‐Level Iodine‐, Oxygen‐, and Bismuth‐Related Surface Defects

AbstractIn the search for nontoxic alternatives to lead‐halide perovskites, bismuth oxyiodide (BiOI) has emerged as a promising contender. BiOI is air‐stable for over three months, demonstrates promising early‐stage photovoltaic performance and, importantly, is predicted from calculations to tolerate vacancy and antisite defects. Here, whether BiOI tolerates point defects is experimentally investigated. BiOI thin films are annealed at a low temperature of 100 °C under vacuum (25 Pa absolute pressure). There is a relative reduction in the surface atomic fraction of iodine by over 40%, reduction in the surface bismuth fraction by over 5%, and an increase in the surface oxygen fraction by over 45%. Unexpectedly, the Bi 4f7/2 core level position, Fermi level position, and valence band density of states of BiOI are not significantly changed. Further, the charge‐carrier lifetime, photoluminescence intensity, and the performance of the vacuum‐annealed BiOI films in solar cells remain unchanged. The results show BiOI to be electronically and optoelectronically robust to percent‐level changes in surface composition. However, from photoinduced current transient spectroscopy measurements, it is found that the as‐grown BiOI films have deep traps located ≈0.3 and 0.6 eV from the band edge. These traps limit the charge‐carrier lifetimes of BiOI, and future improvements in the performance of BiOI photovoltaics will need to focus on identifying their origin. Nevertheless, these deep traps are three to four orders of magnitude less concentrated than the surface point defects induced through vacuum annealing. The charge‐carrier lifetimes of the BiOI films are also orders of magnitude longer than if these surface defects were recombination active. This work therefore shows BiOI to be robust against processing conditions that lead to percent‐level iodine‐, bismuth‐, and oxygen‐related surface defects. This will simplify and reduce the cost of fabricating BiOI‐based electronic devices, and stands in contrast to the defect‐sensitivity of traditional covalent semiconductors.

Defect characterization of unannealed neutron transmutation doped silicon by means of deep temperature microwave detected photo induced current transient spectroscopy

Unannealed neutron transmutation doped silicon substrates with a target resistivity of approximately 1000Ωcm are characterized for radiation induced defects by means of microwave detected photoinduced current transient spectroscopy (MD-PICTS). This technique is a contactless advancement of conventional PICTS and does not require the fabrication of ohmic contacts. Defect spectroscopy by means of MD-PICTS is conducted in a broad temperature range between 30 K and 293 K, which makes it possible to identify energetically shallow as well as deep traps. In addition, a wavelength dependent analysis is performed to determine whether a defect is located at the surface or in the bulk material. Three traps with an average activation energy of 68meV, 85meV, and 150meV are observed. In addition, an indication for deep defect states with activation energies between 320meV and 480meV is found. According to the wavelength dependent analysis, it is assumed that all observed traps are bulk defects. Finally, a minority carrier lifetime of approximately 0.7 μs is determined, suggesting that the crystal is heavily damaged by neutron radiation.