An influence of uniaxial elastic deformation on change of mobility of carriers of a current in crystals n − Si with a deep level 0,17 c E − eV and n −Ge with a deep energetic level 0,2 c E − eV is investigated. During this concentration of deep centers in crystals n − Si and n −Ge features of dependences 0 f (X ) μ = μ at different temperatures those, that and in relation to clean crystals n − Si and n −Ge without deep levels in the conditions of mainly phonon dissipation is showed.